GaN and related alloys - 2003 symposium held December 1 - 5, 2003, Boston, Massachusetts, U.S.A. ; [at the 2003 MRS fall meeting]
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| 245 | 1 | 0 | |a GaN and related alloys - 2003 |b symposium held December 1 - 5, 2003, Boston, Massachusetts, U.S.A. ; [at the 2003 MRS fall meeting] |c ed.: Hock Min Ng ... |
| 264 | 1 | |a Warrendale, Pa. |b Materials Research Society |c 2004 | |
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| 490 | 1 | |a Materials Research Society symposium proceedings |v 798 | |
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| adam_text | MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 798 GAN AND
RELATED ALLOYS*2003 SYMPOSIUM HCLD DECEMBCR 1-5, 2003, BOSTON,
MASSACHUSETTS, U.S.A. EDITORS: HOCK MIN NG BELL LABORATORIES, LUCENT
TECHNOLOGIES MURRAY HILL, NEW JERSEY, U.S.A. MICHAEL WRABACK U.S. ARMY
RESEARCH LABORATORY ADELPHI, MARYLAND, U.S.A. KAZUMASA HIRAMATSU MIC
UNIVERSITY MIE, JAPAN NICOLAS GRANDJEAN SWISS FEDERAL INSTITUTE OF
TECHNOLOGY-LAUSANNE (EPFL) LAUSANNE, SWIT2ERLAND IMIRISI MATERIALS
RESEARCH SOCIETY WARRENDALE, PENNSYLVANIA CONTENTS PREFACE.. X XI
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS XXII OPTICAL DEVICES
HIGH CURRENT INJECTION TO A UV-LED GROWN ON A BULK A1N SUBSTRATE 3
TOSHIO NISHIDA, TOMOYUKI BAN, HISAO SAITO, AND TOSHIKI MAKIMOTO GAN
QUANTUM DOTUV LIGHT EMITTING DIODE 11 JEONG-SIK LEE, SATORU TANAKA,
PETER RAMVALL, AND HIROAKI OKAGAWA HIGH POWER 330 NM ALINGAN UV LEDS IN
THE HIGH INJECTION REGIME 17 M. GHERASIMOVA, J. SU, G. CUI, J. HAN, H.
PENG, E. MAKARONA, Y. HE, Y.-K. SONG, AND A.V. NURMIKKO OPTICAL
PROPERTIES OF ALN/ALGA(IN)N SHORT PERIOD SUPERLATTICES*DEEP UV LIGHT
EMITTING DIODES ..............23 M. HOLTZ, I. AHMAD, V.V. KURYATKOV,
B.A. BORISOV, G.D. KIPSHIDZE, A. CHANDOLU, S.A. NIKISHIN, AND H. TEMKIN
ELECTRICAL AND OPTICAL CHARACTERISTICS OF DELTA DOPED ALGAN C LADDING
LAYER MATERIALS FOR HIGHLY EFFIEIENT 340 NM ULTRA VIOLET LEDS 29 H.P.
XIN, J.S. FLYNN, J.A. DION, E.L. HUTCHINS, H. ANTUNES, L. FIESCHI-CORSO,
R. VAN EGAS, AND G.R. BRANDES EMISSION MECHANISMS IN UV EMITTING GAN/ALN
MULTIPLE QUANTUM WELL STRUCTURES ,35 MADALINA FURIS, ALEXANDER N.
CARTWRIGHT, HONG WU, AND WILLIAM J. SCHAFF ZNO/ALGAN ULTRAVIOLET LIGHT
EMITTING DIODES 41 D.M. BAGNALL, YA.I. ALIVOV, E.V. KALMINA, D.C. LOOK,
B.M. ATAEV, M.V. CHUKICHEV, A.E. CHERENKOV, AND A.K. OMAEV V HIGH
PERFORMANCE SOLAR BLIND DETECTORS BASED ON ALGAN GROWN BY MBE AND MOCVD
47 JEAN-YVES DUBOZ, JEAN-LUC REVERCHON, MAURO MOSCA, NICOLAS GRANDJEAN,
AND FRANCK OMNES CHARACTERIZATION OF III-NITRIDE BASED SCHOTTKY UV
DETECTORS WITH WIDE DETECTABLE WAVELENGTH RANGE (360-10 NM) USING
SYNCHROTRON RADIATION 53 ATSUSHI MOTOGAITO, KAZUMASA HIRAMATSU, YASUHIRO
SHIBATA, HIRONOBU WATANABE, HIDETO MIYAKE, KAZUTOSHI FUKUI, YOUICHIRO
OHUCHI, KAZUYUKI TADATOMO, AND YUTAKA HAMAMURA ELECTRONIC DEVICES MOCVD
ALGAN/GAN HFETS ON SI: CHALLENGES AND ISSUES 61 PRADEEP RAJAGOPAL, JOHN
C. ROBERTS, J.W. COOK JR., I.D. BROWN, EDWIN L. PINER, AND KEVIN J.
LINTHICUM HIGH TEMPERATURE OPERATION OF A NEW NORMALLY-OFF ALGAN/GAN
HFET ON SI SUBSTRATE 67 SEIKOH YOSHIDA, JIANG LI, TAKAHIRO WADA, AND
HIRONARI TAKEHARA HIGH-POWER CHARACTERISTICS OF GAN/LNGAN DOUBLE
HETEROJUNCRION BIPOLAR TRANSISTORS WITH A REGROWN P-INGAN BASE LAYER...
, 73 TOSHIKI MAKIMOTO, YOSHIHARU YAMAUCHI, AND KAZUHIDE KUMAKURA DESIGN
OF COMPOSITE CHANNELS FOR OPTIMIZED TRANSPORT IN NITRIDE DEVICES 79
MADHUSUDAN SINGH, JASPRIT SINGH, AND UMESH K. MISHRA DESIGN AND
FABRICATION OF GAN-BASED PERMEABLE-BASE TRANSISTORS 85 JASPER S. CABALU,
LIBERTY L. GUNTER, IAN FRIEL, ANIRBAN BHATTACHARYYA, YURI FEDYUNIN,
KANIN CHU, ENRICO BELLOTTI, CHARLES EDDY JR., AND THEODORE D. MOUSTAKAS
WAFER-FUSED N-ALGAAS/P-GAAS/N-GAN HETEROJUNCTION BIPOLAR TRANSISTOR WITH
UID-GAAS BASE-COUECTOR SETBACK.. 91 SARAH ESTRADA, JAMES CHAMPLAIN, CHAD
WANG, ANDREAS STONAS, LARRY COLDREN, STEVEN DENBAARS, UMESH MISHRA, AND
EVELYN HU VI MOCVD ALGAN/GAN HFET S MATERIAL OPTIMIZATION AND DEVICES
CHARACTERIZATION 95 ALEXANDER DEMCHUK, DON OLSON, DAN OLSON, MINSEUB
SHIN, AND GORDON MUNNS DELTA-DOPED ALGAN/GAN HETEROSTRUCTURE
FIELD-EFFECT TRANSISTORS WITH INCORPORATION OF A1N EPILAYERS 101 Z.Y.
FAN, M.L. NAKARMI, J.Y. LIN, AND H.X. JIANG LP-MOCVD GROWTH OF GAALN/GAN
HETEROSTRUCTURES ON SILICON CARBIDE: APPLICATION TO HEMT S DEVICES 107
M-A. DI FORTE POISSON, M. MAGIS, M. TORDJMAN, R. AUBRY, M. PESCHANG,
S.L. DELAGE, J. DI PERSIO, B. GRIMBERT, V. HOEL, E. DELOS, D. DUCATTEAU,
AND C. GAQUIERE EXPERIMENTAL ANALYSIS AND A NEW THEORETICAL MODEL FOR
ANOMALOUSLY HIGH IDEALITY FACTORS (N » 2.0) IN GAN-BASED P-N JUNCTION
DIODES N3 JAY M. SHAH, YUNLI LI, THOMAS GCSSMANN, AND E. FRED SCHUBERT
FABRICATION OF THERMOELECTRIC DEVICES USING ALINN AND INON FILMS
PREPARED BY REACTIVE RADIO-FREQUENCY SPUTTERING .....119 S. YAMAGUEHI,
R. IZAKI, N. KAIWA, S. SUGIMURA, AND A. YAMAMOTO NANOSTRUCTVRES *
STRUCTURAL AND OPTICAL PROPERTIES OF GAN QUANTUM DOTS 127 B. DAUDIN, N.
GOGNEAU, C. ADELMANN, E. SARIGIANNIDOU, T. ANDREEV, F. ENJALBERT, E.
MONROY, F. FOSSARD, J.L. ROUVIERE, Y. HORI, X. BIQUARD, D. JALABERT, LE
SI DANG, M. TANAKA, AND O. ODA EFFECTS OF GROWTH INTERRUPTION ON THE
STRUCTURAL AND OPTICAL PROPERTIES OF GAN SELF-ASSEMBLED QUANTUM DOTS 139
K. HOSHINO, S. KAKO, AND Y. ARAKAWA ELECTRON FIELD EMISSION FROM GAN
NANOTIP PYRAMIDS ........145 HOCK M. MG, JONATHAN SHAW, AREF CHOWDHURY,
AND NILS G. WEIMANN *INVITED PAPER VN INFIUENCE OF A1N OVERGROWTH ON GAN
NANOSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXY 151 N. GOGNEAU, E.
MONROY, D. JALABERT, E. SARIGIANNIDOU, J.L. ROUVIERE, AND B. DAUDIN
INTERSUBBAND ABSORPTIONS IN DOPED AND UNDOPED GAN/ALN QUANTUM WELLS AT
TELECOMMUNICATION WAVELENGTHS GROWN ON SAPPHIRE AND 6H-SIC SUBSTRATES...
157 A. HELMAN, M. TCHERNYCHEVA, A. LUSSON, E. WARDE, F.H. JULIEN, E.
MONROY, F. FOSSARD, LE SI DANG, AND B. DAUDIN HI-NITRIDE PHOTONIC
CRYSTALS FOR BLUE AND UV EMITTERS 163 J. SHAKYA, K.H. KIM, J. LI, J.Y.
LIN, H.X. JIANG, AND T.N. ODER OPTIMIZATION OF GAN/ALGAN QUANTUM WELLS
FOR ULTRAVIOLET EMITTERS 169 A. HANGLEITER, D. FUHRMANN, M. GREVE, AND
U. ROSSOW INN NANOSTRUCTURES: STRAIN AND MORPHOLOGY .175 FRANCOIS
DEMANGEOT, JEAN FRANDON, CIAIRE PINQUIER, MICHEL CAUMONT, OLIVIER BRIOT,
BENEDICTE MALEYRE, SANDRA CLUR-RUFFENACH, AND BERNARD GIL SPECTROSCOPY
OF INTRABAND ELECTRON CONFINEMENT IN SELF- ASSEMBLED GAN/ALN QUANTUM
DOTS 181 ANA HELMAN, KHALID MOUMANIS, MARIA TCHERNYCHEVA, ALAIN LUSSON,
FRANCOIS JULIEN, BENJAMIN DAMILANO, NICOLAS GRANDJEAN, JEAN MASSIES,
CHRISTOPHE ADELMANN, FREDERIC FOSSARD, DANIEL LE SI DANG, AND BRUNO
DAUDIN INDIUM NITRIDE : BANDGAP ENERGY AND PHYSICAL PROPERTIES OF INN
GROWN BY RF-MOLECULAR BEAM EPITAXY 189 YASUSHI NANISHI, YOSHIKI SAITO,
TOMOHIRO YAMAGUCHI, FUMIE MATSUDA, TSUTOMU ARAKI, HIROYUKI NAOI, AKIRA
SUZUKI, HIROSHI HARIMA, AND TAKAO MIYAJITNA TNVITED PAPER V111 PRESSURE
DEPENDENCE OF OPTICAL TRANSITIONS IN IN-RICH GROUP III-NITRIDE ALLOYS 20
1 S.X. LI, J. WU, W. WALUKIEWICZ, W. SHAN, E.E. HALLER, HAI LU, AND
WILLIAM J. SCHAFF TEMPERATURE DEPENDENCE OF THE OPTICAL PROPERTIES FOR
INN FILMS GROWN BY RF-MBE 207 Y. ISHITANI, K. XU, W. TERASHIMA, H.
MASUYAMA, M. YOSHITANI, N. HASHIMOTO, S.B. CHE, AND A. YOSHIKAWA GROWTH
OF NON-POLAR A-PLANE AND CUBIC INN ON R-PLANE SAPPHIRE BY MOLECULAR BEAM
EPITAXY 213 HAI LU, WILLIAM J. SCHAFF, LESTER F. EASTMAN, VOLKER
CIMALLA, JOERG PEZOLDT, OLIVER AMBACHER, J, WU, AND WLADEK WALUKIEWICZ
OPTICAL AND ELECTRIC AL PROPERTIES OF LOW TO HIGHLY- DEGENERATE INN
FILMS 219 D.B. HADDAD, H. DAI, R. NAIK, C. MORGAN, V.M. NAIK, J.S.
THAKUR, G.W. AUNER, L.E. WENGER, H. LU, AND W.J. SCHAFF STUDY OF THE
GROWTH MECHANISM AND PROPERTIES OF INN FILMS GROWN BY MOCVD 225 ABHISHEK
JAIN AND JOAN M. REDWING OPTICAL AND MICROSTRUCTURAL CHARACTERIZATION OF
INN GROWN BY PAMBE ON (0001) SAPPHIRE AND (001) YSZ 231 P.A. ANDERSON,
C.E. KENDRICK, T.E. LEE, W. DIEHL, R.J. REEVES, V.J. KENNEDY, A.
MARKWITZ, RJ, KINSEY, AND S.M. DURBIN CHARACTERIZATION OF PHOTOVOLTAIC
CELLS USING N-INN/P-SI GROWN BY RF-MBE 237 CHIHARU MORIOKA, TOMOHIRO
YAMAGUCHI, HIROYUKI NAOI, TSUTOMU ARAKI, AKIRA SUZUKI, AND YASUSHI
NANISHI STRUCTURAL CHARACTERIZATION OF LOW-TEMPERATURE INN BUFFER LAYER
GROWN BY RF-MBE 243 T. ARAKI AND Y. NANISHI REAL-TIME OPTICAL MONITORING
OF GAS PHASE DYNAMICS FOR THE GROWTH OF INN AT ELEVATED PRESSURES 249 N.
DIETZ, H. BORN, M. STRASSBURG, AND V. WOODS IX BULK/QUEASI SU BS TRA TES
GROWTH AND FABRICATION OF 2 INCH FREE-STANDING GAN SUBSTRATES VIA THE
BOULE GROWTH METHOD 257 DREW HANSER, LIANGHONG LIU, EDWARD A. PREBLE,
DARIN THOMAS, AND MARK WILLIAMS GROWTH OF GAN CRYSTALS UNDER AM MONO
THERMAL CONDITIONS 263 MICHAEL J. CALLAHAN, BUGUO WANG, LIONEL 0.
BOUTHUELETTE, SHENG-QI WANG, JOSEPH W. KULIS, AND DAVID F. MISS CURVATURE
AND STRAIN IN THICK HVPE-GAN FOR QUASI- SUBSTRATE APPLICATIONS 269
CLAUDIA RODER, TIM BOETTCHER, TANYA PASKOVA, BO MONEMAR, AND DELIEF
HOMMEL GROWTH AND CHARACTERIZATION OF BULK GAN CRYSTALS AT HIGH PRESSURE
AND HIGH TEMPERATUR:... 275 M.P. D EVELYN, K.J. NARANG, D.-S. PARK,
H.C. HON», M. SSARBER, S.A. TYSOE, J. LEMAN, .1. BALCH. V.L. LOU, S.F.
LEBOEUF, Y. (IAO, .I.A. TEETSOV, L .J. CODELLA, P.R. TAVERNIER, U.R.
CLARKE, AND R.J. MOLNAR VAPOR PHASE TRANSPORT OF AIN IN AN RF LLEATED
REACTOR: LOW AND HIGH TEMPERATURE STUDIES 281 V. NOVESKI, R. SCHIESSER,
.1. FREILAS JE, S. MAHAJAN, S. BEANDOIN, AND Z. SILAR CRUCIBLE SELCCTION
IN AIN BULK CRYSTAL GROWTH 287 RAL ACL DALMAU, BALAJI RAGHOTHAMACHAR,
MICHAEL DUDLCY. RAOUL SCHIESSER, AND ZLATKO SILAR PROPERTIES OF CRUCIBLE
MATERIALS FOR BULK GROWTH OF AIN 293 GLEN A. SLACK, JON WHITLOCK, KEN
MORGAN, UND LEO J. SCHOWALLER EFFECT OF IMPURITIES ON RAMAN AND
PHOTOLUMINESCENCE SPECTRAOF AIN BULK CRYSTALS 297 A. SARUA, S.
RAJASINGAM, M. KUBALL, N. (IARRO. 0. SANCHO, A. CROS, A. CANTARERO, D.
OLGUIN, R. LIU, D. ZHUANG, AND J.FL. EDGAR X HETEROEPITAXY HNO,
TREATMENT OF SAPPHIRE FOR MANAGEMENT OF GAN POLARITY IN MOCVD METHOD:
COMPARISON OF THE PROPERTIES OF+C AND-C GAN REGION * 30 5 MOTOKI TAKABE.
MASATOMO SUMIYA, AND SHUNRO FUKE EITHER STEP-FLOW OR LAYER-BY-LAYER
GROWTH FOR AIN ON SIC (0001) SUBSTRATES 311 JUN SUDA. NORIO ONOJIMA,
TSUNENOBU KIMOTO, AND HIROYUKI MATSUNAMI GROWTH AND SURFACE
RECONSTRUCTIONS OF AIN(0001) FILMS 317 CD. LEE, Y. DONG, R.M. FEENSTRA,
.I.E. NORTHRUP, AND .1. NEUGCBAUER GROWTH EVOLUTION OF GALLIUM NITRIDE
KILMS ON STCPPED AND STEP-FREE SIC SURFACES 323 CHARLES R. EDDY JR..
JAMES C. CULBERTSON, NABIL D. BASSINI, MARK F. TWIGG. RONALD F. HOLM,
ROBERT E. STAHLBUSH, RIEHARD L. HENRY, PHILIP (I. NEUDEEK, ANDREW .1.
TRUNEK, AND .1. ANTHONY POWELL N-RICH GAN AS WITH HIGH AS CONTENT GROWN
BY METALORGANIC VAPOR PHASE EPITAXY 329 AKITAKA KIMURA, U.V. TANG, CA.
PAULSON, AND T.F. KUCCH REDUCTION OF THREADING DISLOCATION DENSITY IN
ALGAN BY INDIUM INCORPORATION - ** ..335 H. KANG. Z.C FENG, I. FERGUSON,
S.P. CIUO, AND M. POPHRISTIC HIGH ELECTRON MOBILITY IN ALGAN/GAN HEM I
GROWN ON SAPPHIRE: STRAIN MODIFICATION BY MEANSOF AIN INTERLAYERS 341
MARIANNE GERMAIN, MAARTEN L.EYS, STEVEN BOEYKENS, STEFAN DEGROOTE, WEN
FEI WANG. DOMINIQUE SCHREINS, WOUTER RUYLHOORCN. KANG-LLOON CHOI. BENNY
VAN DACLC, GUSTAAF VAN TCNDELOO, AND (IUSTAAF BORGHS PROPOSAL TO USE
GAAS(114) SUBSTRATES FOR IMPROVEMENT OF THE OPTICAL TRANSITION
PROBABILITY IN NITRIDE SEMICONDUCTOR QUANTUM WELLS * 347 MITSURU FUNATO,
YOSHINOBU KAWAGUCHI. AND SHIGEO FUJITA REDUCTION OF DARK CURRENT IN
ALGAN/GAN SCHOTTKY BARRIER PHOTODETECTORS WITH A LOW-TEMPERATURE-GROWN
GAN CAP LAYER 353 G.C. CHI, J.K. SHEU, MX. LEE, C.J. KAO, Y.K. SU, SJ.
CHANG, AND W.C. LAI EFFECT OF BUFTER DESIGN ON ALGAN/AIN/GAN
HETEROSTRUCUTRES BY MBE 359 (JON NAMKOONG, W. ALAN DOOLITTLE, A.S.
BROWN, M. LOSURDO, M.M. GIANGREGORIO, AND G. BRUNO GAN LAYERS RE-GROWN
ON ETCHED GAN TEMPLATES BY PLASMA ASSISTED MOLECULAR BEAM EPITAXY 365 L.
HE, X. GU, .1. XIE, F. YUN, A.A. BA SKI, AND H. MORKOC SURFACE CONTROL
OF ZRB, (0001) SUBSTRATE FOR MOLCCULAR- BEAM EPITAXY OF GAN 369 JUN
SUDA, HIROYASU YAMASHITA, ROBERT ARMITAGE, TSUNCNOBU KIMOTO, AND
HIROYUKI MATSUNAMI GROWTH AND CHARACTCRIZATION OF RPITAXIAL GAN THIN
FILMS ON 4H-SJC (II.) SUBSTRATES 375 BRIAN ! . WAGNER, E.A. PREBLE,
Z.J. REITMEIER, R.K. DAVIS, D.N. ZAKHAROV, AND Z. LILIENTAL-WEBER
THERMAL CONDUCTIVITY OF GAN GROVVN ON SILICON SUBSTRATES 381 C. MION,
Y.C. CHANG, J.K. MIITH, P. RAJAGOPAL, AND .I.D. BROWN GROWTH OF
CRACK-FREE GAN ON AIN QUANTUM DOTS ON ST(L 11) SUBSTRATES BY MOCVD 387
W.H. SUN, J.L. CHEN, L.S. WANG, AND S.J. CHUA GROWTH AND
CHARACTERIZATION OF AIN AND GAN THIN FILMS DEPOSITED ON SI(L 11)
SUBSTRATES CONTAINING A VERY THIN AI LAYER 391 ZACHARY .1. REITMEIER AND
ROBERT K. DAVIS GAN EPITAXIAL GROWTH PROCESS AT HIGH GROWTH TEINPERATURE
BY NH, SOURCE MOLECULAR BEAM EPITAXY 397 NAOKI OHSHIMA, AKIHIRO
SUGIHARA, NAOYA YOSHIDA. AND NAOHIKO OKABE XU MBE GROWN AIN FILMS ON SIC
FOR PIEZOELECTRIC MEMS SENSORS 403 DHARANIPAL DOPPALAPUDI. RICHARD
MLCAK, JEFFREY CHAN, HARRY- TULLER, ANIRBAN BHATTACHARYA, AND THEODORE
MOUSTAKAS COMBINED MOCVD AND MBE GROWTH OF GAN ON POROUS SIC 409
ASHUTOSH SAGAR, R.M. FEENSTRA, CK. LNOKI, T.S. KUAN, AND D.D. KOLESKE
EPITAXY OF HIGHLY OPTICAL EFTICIENT GAN ON O AND ZN FACE ZNO 415 XING
GU, MICHAEL A. RESHCHIKOV, LEI HE, ALI TEKE, FENS YUN, DANIEL K.
JOHNSTONE. BILL NEMCTH, JEFF NAUSE, AND HADIS MORKOC RARE EARTH DOPING
LUMINESCENCC PROPERTIES OF EU LON-LMPLANTED GAN 423 SHIN-ICHIRO UCKUSA
AND LSAO TANAKA ELECTRON MICRO-PROBE ANALVSIS AND CATHODOLUMINESCENCE
SPECTROSCOPY OF RARE EARTH-IMPLANTED GAN ...» ...42 9 S. DALNIASSO, R.W.
MARTIN, P.R. EDWARDS, V. KATCHKANOV, K.P. O DONNELL, K. LOREN/, F..
ALVES, U. WAHL, B. PIPELEERS, V. MATIAS, A. VANTOMME, Y. NAKANISLII, A.
WAKAHARA, AND A. YOSHIDA EXTENDED X-RAY ABSORPTION FINE STRUCTURE
STUDIOS OF GAN EPILAYERS DOPED IN SITU WITH ER AND EU DURING MOLECULAR
BEAM EPITAXY * *** 435 V. KATCHKANOV. J.F.W. MOSSELMANS. S. DALNIASSO,
K.P. O DONNELL. R.W. MARLIN, O. BRIOT, N. ROUSSEAU, AND G. HALAMBALAKIS
STRUCTURE AND PHOTOLUMINESCENCE INVESTIGATIONS OF ER DOPED GAN LAYERS
GROWN BY MBE 441 T. WOJTOWICZ, H.M, NG, AND P. RUTERANA HIGH TEMPERATURE
IMPLANTATION OF TM IN GAN -*- 447 K. LORENZ. U. WAHL. E. ALVES. S.
DALNIASSO, R.W. MARTIN, AND K.P. O DONNELL PROCESSING OF RARE EARTH
DOPED GAN WITH ION BEAMS 453 K. LORENZ, L. WAHL. E. ALVES. T. WOJTOWICZ.
P. RUTERANA, S. DALNIASSO. R.W. MARTIN, K.P. O DONNELL, S. RUFFENACH, 0.
BRIOT. AND A. VANTOMME XIN ABOVE AND BELOW SSANDGAP EXCITATION OF
ER-DEFECT CONIPLEXES AND ISOLATED ER IN ER-IMPLANTED GAN 4 $9 A. BRAUD,
M. ABOUZAID, M. WOJDAK, J.L. DOUALAN. R. MONCORGE, B. PIPCLEERS, AND A.
VANTOMME LUMINESCENT HOLMIUM DOPED AMORPHOUS AIN THIN FILMS FUER USE AS
WAVEGUIDES AND LASER CAVITIES 465 MUHAMMAD MAQBOOL, H.H. RICHARDSON,
P.G. VAN PATTEN, AND M.E. KORDESCH STRUCTURE AND ELECTRICAL ACTIVITY OF
RARE-EARTH DOPANTS IN SELECTED ILL-VS 471 J.-S. FILHO, S. PETIT, R.
JONES, B. HOURABINE, TH. FRAUENHEIM, H. OVERHOF, J. COUTINHO. M.J. SHAW,
P.R. BRIDDON, AND S. OEBCRG DOPMG/THEORY MG DOPED GAN USING A VALVCD,
THERMALLY ENERGETIC SOURCC: ENHANCED INCORPORATION, CONTROL AND
QUANTITATIVE OPTIMIZATION . ** SHAWN D. BURNHAM, W. ALAN DOOLITTLE, GON
NAMKOONG. AND WALTER HENDERSON HYDROGEN-RELATED LOCAL VIBRATKMAL MODES
IN GANRMG TVN BY MOLECULAR BEAM EPITAXY 1). PASTOR, R. C USCO, L. ARTUS,
F. NARANJO, AND F.. T ALLEJA GROWN BY MOLECULAR HEAM EPITAXY. 48:I
NON-EQUILIBRIUM ACCCPTOR CONCENTRATION IN GAN: MG GROWN BY METALORGANIC
CHEMICAL VAPOR DEPOSITION 4 *1 Y. CJONG, Y. GU, IGOR 1.. KUSKOVSKY,
(I.F. NENMARK, J. LI. J.Y. LIN, H.X. .HANG, AND I. FERGUSON FORMATION
AND DISSOCIATION OF HYDROGEN-RELATED DEFECT CENTERS IN MG-DOPED
GAN...... - - 49 O. GELHAUSEN. M.R. PHILLIPS, F.M. GOLDYS, I .
PASKOVA. B. MONEMAR, M. STRASSBURG, AND A. HOFFMANN THERMAL ACTIVATION
OF BERYLLIUM IN GAN GROWN BY RF-PLASMA MOLECULAR BEAM EPITAXY 503 B.L.
VANMIL, KYOUNGNAE LEE, LIJUN WANG, N.C. GILES. ANDL.H. MYERS XIV
THERMALLY STIMULATED CURRENT SPECTROSCOPY OF CARBON- DOPED GAN GROWN BY
MOLECULAR BEAM EPITAXY Z-Q. FANG, D.C LOOK, R. ANNITAGE, Q. YANG, AND
F..R. WEBER ARSENIC INCORPORATION BEHAVIOR IN NITROGEN-RICH GANAS ALLOYS
SYNTHESIZED BY METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) M.
GHERASIMOVA. R.G. WHEELER, L..I. GUIDO, KX. ( HANG AND K.C. HSIEH THE
INFLUENCE OF SUBSTRATE POLARITY ON THE BLUE EMISSION FROM AS-DOPED GAN
LAYERS CROWN BY MOLECULAR BEAM EPITAXY S.V. NOVIKO . L.X. ZHAO. C .L
FOXON, 1. HARRISON, R.P. CAMPION, CR. STADDON. S.W. KANG, O. KRYLIOIIK,
AND T. ANDERSON MODULATION OF ARSENIC INCORPORATION IN GAN LAYERS CROWN
BY MOLECULAR BEAM EPITAXY S.V. NOVIKOV, L.X. ZHAO, CT. FOXON, BJA. BER,
A.P. KOVARSKV, I. HARRISON. M.W. FAY. AND P.D. BROWN .509 IDENTIFICATION
OF CARBON-RELATED BANDGAP STATES IN GAN GROWN BV MOCVD A. ARMSTRONG.
A.R. AREHART, S.A. RINGEL, B. MORAN, S.P. DENBAARS, U.K.. MISHRA, AND
.LS. SPECK ELECTRICAL AND OPTICAL PROPERTIES OF CARBON DOPED CUBIC GAN
EPILAYERS GROWN UNDER EXTREME GA EXCESS 5 5 DJ. AS. D.G.
PAEHECO-SALA/AR, S. POTTHAST, AND K.. LISCHKA .521 .527 .5.13 .539 .545
INVESTIGATION OF MOLECULAR CO-DOPING FOR LOW LONIZATION ENERGY P-TYPE
CENTERS IN (GA.AL)N * ZHE CHUAN LENG. ADAM M. PAYNE, DAVID NICOL. PAUL
I). HELM, AND LAN FERGUSON SVNTHESIS AND CHARACTERIZATION OF HIGH
QUALITY FERROMAGNERIC CR-DOPED GAN AND AIN THIN FILMS WITH CURIE
TEMPERATURES ABOVE 900K 551 STEPHEN Y. WU, H.X. LIU, LIN GU. R.K. SINGH.
M. VAN SCHILFGAARDE. DAVID J. SMITH. M.R. DILLEY. L. MONTES. M.B.
SIMMONDS, AND N. NCWMAN XV NOVEL METHOD FOR THE ACTIVATION OF ACCEPTOR
DOPANT IN A1N INTRODUCING LOCALIZED BAND BY ISOELECTRONIC DOPANT ..557
TOSHIYUKI TAKIZAWA MAGNETIC PROPERTIES OF MN-DOPED GAN, INGAN, AND ALGAN
563 M.L. REED, E.A. BERKMAN, M.J. REED, F.E. ARKUN, T. CHIKYOW, S.M.
BEDAIR, J.M. ZAVADA, AND N.A. EL-MASRY OPTICAL PROPERTIES OF MN-DOPED
GAN 569 O. GELHAUSEN, E. MALGUTH, M.R. PHILLIPS, E.M. GOLDYS, M.
STRASSBURG, A. HOFFMANN, T. GRAF, M. GJUKIC, AND M. STUTZMANN DEEP
DEFECTS IN FE-DOPED GAN LAYERS ANALYSED BY ELECTRICAL AND
PHOTOELECTRICA! SPECTROSCOPIC METHODS ...575 H. WITTE , K. FLUEGGE, A.
DADGAR, A. KRTSCHIL, A. KROST, AND J. CHRISTEN PROCESSING GATE LEAKAGE
SUPPRESSION AND CONTACT ENGINEERING IN NITRIDE HETEROSTRUCTURES.. 583
YUH-RENN WU, MADHUSUDAN SINGH, AND JASPRIT SINGH LASER DIODE FACET
DEGRADATION STUDY 589 ULRICH T. SCHWARZ, THOMAS SCHOEDL, V. KUEMMLER, A.
LELL, AND V. HAERLE INFLUENCE OF METAL THICKNESS TO SENSITIVITY OF PT/GAN
SCHOTTKY DIODES FOR GAS SENSING APPLICATIONS ........593 V. TILAK, M.
ALI, V. CIMALLA, V. MANIVANNAN, P. SANDVIK, J. FEDISON, O. AMBACHER, AND
D. MERFELD OPTICAL CHARACTERIZATION POLARIZATION-DEPENDENT SPECTROSCOPY
OF THE NEAR- BANDGAP EXCITONIC EMISSION IN FREE STANDING GAN 601 P.P.
PASKOV, T. PASKOVA, P.O. HOLTZ, AND B. MONEMAR TIME-RESOLVED
REFLECTIVITY STUDIES OF ELECTRIC FIELD EFFECTS IN HI-NITRIDE
SEMICONDUCTORS 607 M. WRABACK, H. SHEN, A.V. SAMPATH, C.J. COLLINS, G.A.
GARRETT, W.L. SAMEY, Y. FEDYUNIN, J. CABALU, AND T.D. MOUSTAKAS XVI
ADVANCES IN THE REALISATION OF GAN-BASED MICROCAVITIES: TOWARDS STRONG
COUPLING AT ROOM TERAPERATURE 613 F. SEMOND, D. BYRNE, F. NATALI, M.
LEROUX, J. MASSIES, N. ANTOINE-VINCENT, A. VASSON, P. DISSEIX, AND J.
LEYMARIE ORIGINS OF LIGHT EMISSION AND EFFICIENCY SATURATION OF THE
PHOTOLUMMESCENCE OF GAN NANOCRYSTALLITES 619 XIANG-BAI CHEN, JOHN L.
MORRISON, MARGARET K. PENNER, JENNIFER ELLE, AND LEAH BERGMAN OPTICAL
AND MICROSTRUCTURAL PROPERTIES OF N- AND GA-POLARITY GAN 625 A. BELL,
J.L. SMIT, R. LIU, J. MEI, F.A. PONCE, H.M. NG, A. CHOWDHURY, AND N.G.
WEIMANN PHOTOLUMMESCENCE FROM FREESTANDING GAN WITH (1010 ) ORIENTATION
631 M.A. RESHCHIKOV, A. TEKE, H.P. MARUSKA, D.W. HILL, AND H. MORKOC
STRUCTURAL DEFECT-RELATED PHOTOLUMMESCENCE IN GAN 637 L. CHEN, BJ.
SKROMME, M.K. MIKHOV, H. YAMANE, M. AOKI, F.J. DISALVO, B. WAGNER, R.F.
DAVIS, P.A. GRUDOWSKI, AND R.D. DUPUIS OPTICAL EVALUATION OF PRETREATED
INGAN QUANTUM WELL STRUCTURES * ......643 T. BOETTCHER, F. BERTRAM, P.
BERGMAN, A. UETA, J. CHRISTEN, AND D. HOMMEL RECOMBINATION RELATED TO
TWO-DIMENSIONAL ELECTRON GAS OF A^GA^N/GAN SINGLE HETEROSTRUCTURES
STUDIED WITH PICOSECOND TIME-RESOLVED PHOTOLUMMESCENCE .......649 QING
YANG, ROB ARMITAGE, EICKE R. WEBER, RONALD BIRKHAHN, DAVID GOTTHOLD,
SHIPING GUO, AND BRIAN ALBERT SYNTHESIS, STRUETURE AND LUMINESCENCE OF
HIGH BRIGHTNESS GALLIUM NITRIDE POWDER 655 R. GARCIA, A. THOMAS, A.
BELL, M. STEVENS, AND F.A. PONCE ANISOTROPIE DIELECTRIC PROPERTIES OF
GAN EPILAYERS ON SAPPHIRE 661 N.L. ROWCLL, G. YU, AND D.J. LOCKWOOD TIME
RESOLVED PHOTOLUMINESCENCE OF SI-DOPED HIGH AI MOLE FRACTION ALGAN
EPILAYERS GROWN BY PLASMA-ENHANCED MOLECULAR BEAM EPITAXY 667 MADALINA
FURIS, ALEXANDER N. CARTWRIGHT, JEONGHYUN HWANG, AND WILLIAM J. SCHAFF
ANOMALOUS COMPOSITION DEPENDENCE OF OPTICA! ENERGIES OF MBE-GROWN INGAN
673 I. FERNANDE?-TORRENTE, D. AMABILE, R.W. MARTIN, K.P. (X DONNEIL,
J.F.W. MOSSELMANS, E. CALLEJA, AND F.B. NARANJO CONFOCAL
PHOTOLUMINESCENCE AND CATHODOLUMINESCENCC STUDIESOF ALGAN 677 V.
DICROLF, (.). SVITELSKIY, (I.S. CARGILL III. A.YU. NIKILBROV, J.
REDWING, AND J. ACORD MANIFESTATION OF STRUCTURAL DEFECTS IN
PHOTOLUMINESCENCE KROM GALN 683 M.A. RCSHCHIKOV, J. JASINSKI, F. YUN,
[.. HE, 7. LILIENTAL-WEBCR, AND II. MORKOC RAMAN CHARACTERIZATION
OL STRAINCD GAN Y AS|_, AND LN S {R;I| ,IN Y ASI, EPILAYERS 689 LI-L.IN
TAY, DAVID .1. LOCKWOOD, JAMES A. GUPTA. AND ZBIG R. WASILEVVSKI OPTICAL
STUDY OF LOCALIZCD AND DELOEALI/.ED STATES IN GAASLN/GAAS 695 Z.Y. XU,
X.D. LUC. X.D. YANG, PJL TAN, C.I.. YANG, W.K. (IC. Y. /HANG, A.
MASCARENHAS, H.P. XIN, AND C.W. TU STNTNG DEPENDENCE OFTHE FUNDAMENTAL
BAND GAP ON THC ALLOY COMPOSITION IN CUBIC LN V GA,_ V N AND LN V AL,, V
N ALLOYS 701 Z. DRIDI, B. BOUHAFS, AND P. RUTERANA STRUCTURAI,
CHARACTERIZATIOS * ATOMIC STRUCTURE OF DEFECTS IN GAN:MG GROWN WITH CA
POLARITY 711 Z. LILIENTAL-WEBER, T. TOMASZEWICZ, D. ZAKHAMV. J.
JASINSKI, M.A. 0 K.EEFE, S. HAUTAKANGAS, A. LAAKSO, AND K. SAARINEN
*INVITED PAPER XVNI STRUCTURAL AND OPTICAL CHARACTERIZATION OF INGAN
LAYERS GROWN BYMOMBE 723 P. SINGH. J. ADERHOLD, J. GRAUL, V.YU. DAVYDOV,
F. GUEURBILLEAU. AND P. RUTERANA THE STRUCTURE OF DISLOCATIONS IN GAN
GROWN BY MBE AS A FUNCTION OFTHE GALLIUM TO NITROGEN RATIO ...729 MARCUS
Q. BAINES, DAVID CHERNS, SERGEI V. NOVIKOV, MICHAEL .1. MANFRA, AND C.
THOMAS FOXON INFLUENCE OF GROWTH PARAMETERS ON THE DEEP LEVEL SPECTRUM
IN MBE-GROWN N-CA.N 735 A.R. AREHART, L. POBLENZ, B. HEYING, .I.S.
SPECK, L .K. MISHRA. S.P. DENBAARS, AND S.A. RINGEL STRAIN EVOLUTION AND
PHONONS IN ALN/GAN SUPERLATTICES 741 V. DARAKCHIEVA, P.P. PASKEN , M.
SCHUBERT, E. VALCHEVA, T. PASKO A, H. ARWIN. B. MONEMAR, II. AMUNO, AND
I. AKASAKI MICROSTRUCTURE OF NONPOLAR A-PLANE GAN CROWN ON (L 120)
4H-SIC INVESTIGATED BY TEM 747 D.N. ZAKHAMV. Z. LILIENTAL-WEBCR, B.
WAGNER, Z.J. REILMEIER. H.A. PREBLC, AND R.F. DAVIS STRUCTURAL STUDY OF
V-LIKE COLUMNAR INVERSION DOMAINS IN AIN GROWN ON SAPPHIRC 753 .1.
JASINSKI, T. TOMAS/EWICZ, Z. LILIENTAL-WEBCR, Q.S. PADUANO, D.W.
WEYBURNC TEM INVESTIGATION OF DEFECT REDUCTION AND ETCH PIT FORMATION IN
GAN 759 ANGELIKA VENNEMANN. JENS DENNEMARCK, ROLAND KROGER, TIM
BOETTCHER. DETLEF HUMMEL AND PETER RYDER PLATELET INVERSION DOMAINS
INDUCED BY MG-DOPING IN ELOG ALGAN FILMS 765 R. LIU. E.A. POLICE. D.
CHERNS, H. ATNANO, AND I. AKASAKI THE MICROSTRUCTURE OF GAN NUCLEATION
LAYERS GROWN BY MOCYD ON (1120) SAPPHIRE VERSUS PRESSURE AND TEMPERATURE
771 T. WOJTOWICZ, P. RUTERANA, M.L. TWIGG, R.L. HENRY, D.D. KOLESKC,
A.E. WICKENDEN EFFECTS OF SI-DOPING ON THE MICROSTRUCTURE OF ALGAN/GAN
MULTIPLE-QUANTUM-WELL 775 R. LIU, F.A. PONCE, S-L. SAHONTA, D. CHERNS,
H. AMANO, AND I. AKASAKI STRUCTURAL UNITS AND ENERGY OF GRAIN BOUNDARIES
IN GAN ...781 JUN CHEN, PIERRE RUTERANA, AND GERARD NOUET ANALYSIS OF
INGAN-GAN QUANTUM WELL CHEMISTRY AND INTERFACES BY TRANSMISSION ELECTRON
MICROSCOPY AND X-RAY SCATTERING 787 T.M. SMEETON, M.J. KAPPERS, J.S.
BARNARD, AND CJ. HUMPHREYS BAND BENDING NEAR THE SURFACE IN GAN AS
DETECTED BY A CHARGE SENSITIVE PROBE 793 S. SABUKTAGIN, M.A. RESHCHIKOV,
D.K. JOHNSTONE, AND H. MORKOC RECIPROCAL SPACE MAPPING OF X-RAY
DIFFRACTION INTENSITY OF GAN-BASED LASER DIODES GROWN ON GAN SUBSTRATES
..799 K. TACHIBANA, Y. HARADA, S. SAITO, S. NUNOUE, H. KATSUNO, C.
HONGO, G. HATAKOSHI, AND M. ONOMURA SURFACE POTENTIAL MEASUREMENTS OF
DOPING AND DEFECTS IN P-GAN 805 M. LOSURDO, M.M. GIANGREGORIO, G. BRUNO,
A.S. BROWN, W.A. DOOLITTLE, GON NAMKOONG, AJ. PTAK, AND T.H. MYERS
EVIDENCE OF STRONG INDIUM SEGREGATION IN MOCVD IN^GA^N/GAN QUANTUM
LAYERS. 811 GRZEGORZ MACIEJEWSKI, GRZEGORZ JURCZAK, SLAWOMIR KRCT, PAWEL
DLUZEWSKI, AND PIERRE RUTERANA A STUDY OF ELEMENTAL INTERDIFFUSION IN
GAN/SI WAFER GROWN BY METALORGANIC VAPOR PHASE EPITAXY 817 X. CHEN, M.
ISHIKO, Y. KUROIWA, AND N. SAWAKI AUTHOR INDEX 823 SUBJECT INDEX 831 XX
|
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| author2_variant | h m n hm hmn |
| author_facet | Ng, Hock Min |
| building | Verbundindex |
| bvnumber | BV024512045 |
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| dewey-search | 621.38152 |
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| id | DE-604.BV024512045 |
| illustrated | Illustrated |
| indexdate | 2024-12-23T22:38:04Z |
| institution | BVB |
| isbn | 1558997369 |
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| publishDate | 2004 |
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| publisher | Materials Research Society |
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| series | Materials Research Society symposium proceedings |
| series2 | Materials Research Society symposium proceedings |
| spellingShingle | GaN and related alloys - 2003 symposium held December 1 - 5, 2003, Boston, Massachusetts, U.S.A. ; [at the 2003 MRS fall meeting] Materials Research Society symposium proceedings |
| subject_GND | (DE-588)1071861417 |
| title | GaN and related alloys - 2003 symposium held December 1 - 5, 2003, Boston, Massachusetts, U.S.A. ; [at the 2003 MRS fall meeting] |
| title_auth | GaN and related alloys - 2003 symposium held December 1 - 5, 2003, Boston, Massachusetts, U.S.A. ; [at the 2003 MRS fall meeting] |
| title_exact_search | GaN and related alloys - 2003 symposium held December 1 - 5, 2003, Boston, Massachusetts, U.S.A. ; [at the 2003 MRS fall meeting] |
| title_full | GaN and related alloys - 2003 symposium held December 1 - 5, 2003, Boston, Massachusetts, U.S.A. ; [at the 2003 MRS fall meeting] ed.: Hock Min Ng ... |
| title_fullStr | GaN and related alloys - 2003 symposium held December 1 - 5, 2003, Boston, Massachusetts, U.S.A. ; [at the 2003 MRS fall meeting] ed.: Hock Min Ng ... |
| title_full_unstemmed | GaN and related alloys - 2003 symposium held December 1 - 5, 2003, Boston, Massachusetts, U.S.A. ; [at the 2003 MRS fall meeting] ed.: Hock Min Ng ... |
| title_short | GaN and related alloys - 2003 |
| title_sort | gan and related alloys 2003 symposium held december 1 5 2003 boston massachusetts u s a at the 2003 mrs fall meeting |
| title_sub | symposium held December 1 - 5, 2003, Boston, Massachusetts, U.S.A. ; [at the 2003 MRS fall meeting] |
| topic_facet | Konferenzschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018486262&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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