Lecture notes on principles of plasma processing
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| 245 | 1 | 0 | |a Lecture notes on principles of plasma processing |c Francis F. Chen and Jane P. Chang |
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Datensatz im Suchindex
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| adam_text | LECTURE NOTES ON PRINCIPLES OF PLASMA PROCESSING FRANCIS F. CHEN
ELECTRICAL ENGINEERING DEPARTMENT AND JANE P. CHANG CHEMICAL ENGINEERING
DEPARTMENT UNIVERSITY OF CALIFORNIA LOS ANGELES, CALIFORNIA KLUWER
ACADEMIC / PLENUM PUBLISHERS NEW YORK, BOSTON, DORDRECHT, LONDON, MOSCOW
TABLE OF CONTENTS VLL TABLE OF PLASMA PHYSICS PART AL: INTRODUCTION TO
PLASMA SCIENCE I. WHAT IS A PLASMA? 1 II. PLASMA FUNDAMENTALS 3 1.
QUASINEUTRALITY AND DEBYE LENGTH 2. PLASMA FREQUENCY AND ACOUSTIC
VELOCITY 3. LARMOR RADIUS AND CYCLOTRON FREQUENCY 4. E X * DRIFT 5.
SHEATHS AND PRESHEATHS PART A2: INTRODUCTION TO GAS DISCHARGES HI. GAS
DISCHARGE FUNDAMENTALS 11 1. COLLISION CROSS SECTION AND MEAN FREE PATH
2. IONIZATION AND EXCITATION CROSS SECTIONS 3. COULOMB COLLISIONS;
RESISTIVITY 4. TRANSITION BETWEEN NEUTRAL- AND ION- DOMINATED ELECTRON
COLLISIONS 5. MOBILITY, DIFFUSION, AMBIPOLAR DIFFUSION 6. MAGNETIC FIELD
EFFECTS; MAGNETIC BUCKETS CROSS SECTION DATA 21 PART A3: PLASMA SOURCES
I IV. INTRODUCTION TO PLASMA SOURCES 25 1. DESIRABLE CHARACTERISTICS OF
PLASMA PROCESSING SOURCES 2. ELEMENTS OF A PLASMA SOURCE PART A4: PLASMA
SOURCES II V. RLE DISCHARGES 31 1. DEBYE SHEATH 2. CHILD-LANGMUIR SHEATH
3. APPLYING A DC BIAS 4. APPLYING AN RF BIAS 5. DISPLACEMENT CURRENT 6.
ION DYNAMICS IN THE SHEATH 7. OTHER EFFECTS IN RIE REACTORS 8.
DISADVANTAGES OF RIE REACTORS 9. MODIFIED RIE DEVICES PLASMA CHEMISTRY
PART BL : OVERVIEW OF PLASMA PROCESSING IN MICROELECTRONICS FABRICATION
I. PLASMA PROCESSING 99 II. APPLICATIONS IN MICROELECTRONICS 100 PART
B2: KINETIC THEORY AND COLLISIONS I. KINETIC THEORY 103 II. PRACTICAL
GAS KINETIC MODELS AND MACROSCOPIC PROPERTIES 109 1. MAXWELL-BOLTZMANN
DISTRIBUTION (MBD) 2. A SIMPLIFIED GAS MODEL (SGM) 3. ENERGY CONTENT 4.
COLLISION RATE BETWEEN MOLECULES 5. MEAN FREE PATH 6. FLUX OF GAS
PARTICLES ON A SURFACE 7. GAS PRESSURE 8. TRANSPORT PROPERTIES 9. GAS
FLOW III. COLLISION DYNAMICS 119 1. COLLISION CROSS SECTIONS 2. ENERGY
TRANSFER 3. INELASTIC COLLISIONS PART B3: ATOMIC COLLISIONS AND SPECTRA
I. ATOMIC ENERGY LEVELS 125 II. ATOMIC COLLISIONS 126 1. EXCITATION
PROCESSES 2. RELAXATION AND RECOMBINATION PROCESSES III. ELASTIC
COLLISIONS 129 1. COULOMB COLLISIONS 2. POLARIZATION SCATTERING IV.
INELASTIC COLLISIONS 130 1. CONSTRAINTS ON ELECTRONIC TRANSITIONS 2.
IDENTIFICATION OF ATOMIC SPECTRA 3. A SIMPLIFIED MODEL VLLL TABLE OF
CONTENTS PART A5: PLASMA SOURCES III VI. ECR SOURCES 47 VII. INDUCTIVELY
COUPLED PLASMAS (ICPS) 49 1. OVERVIEW OF ICPS 2. NORMAL SKIN DEPTH 3.
ANOMALOUS SKIN DEPTH 4. IONIZATION ENERGY 5. TRANSFORMER COUPLED PLASMAS
(TCPS) 6. MATCHING CIRCUITS 7. ELECTROSTATIC CHUCKS (ESCS) PART A6:
PLASMA SOURCES IV VIII. HELICON WAVE SOURCES AND HDPS 61 1. DISPERSION
RELATION 2. WAVE PATTERNS AND ANTENNAS 3. MODE JUMPING 4. MODIFIED SKIN
DEPTH 5. TRIVELPIECE-GOULD MODES 6. EXAMPLES OF HELICON MEASUREMENTS 7.
COMMERCIAL HELICON SOURCES IX. DISCHARGE EQUILIBRIUM 69 1. PARTICLE
BALANCE 2. ENERGY BALANCE 3. ELECTRON TEMPERATURE 4. ION TEMPERATURE
PART A7: PLASMA DIAGNOSTICS X. INTRODUCTION 75 XI. REMOTE DIAGNOSTICS 75
1. OPTICAL SPECTROSCOPY 2. MICROWAVE INTERFEROMETRY 3. LASER INDUCED
FLUORESCENCE (LIF) XII. LANGMUIR PROBES 79 1. CONSTRUCTION AND CIRCUIT
2. THE ELECTRON CHARACTERISTIC 3. ELECTRON SATURATION 4. SPACE POTENTIAL
5. ION SATURATION CURRENT 83 6. DISTRIBUTION FUNCTIONS 90 7. RF
COMPENSATION 8. DOUBLE PROBES AND HOT PROBES PART B4: MOLECULAR
COLLISIONS AND SPECTRA I. MOLECULAR ENERGY LEVELS 137 1. ELECTRONIC
ENERGY LEVEL 2. VIBRATIONAL ENERGY LEVEL 3. ROTATIONAL ENERGY LEVEL II.
SELECTION RULE FOR OPTICAL EMISSION OF MOLECULES 139 III. ELECTRON
COLLISIONS WITH MOLECULES 140 1. FRANK-CONDON PRINCIPLE 2. DISSOCIATION
3. DISSOCIATIVE IONIZATION 4. DISSOCIATIVE RECOMBINATION 5. DISSOCIATIVE
ELECTRON ATTACHMENT 6. ELECTRON IMPACT DETACHMENT 7. VIBRATIONAL AND
ROTATIONAL EXCITATION IV. HEAVY PARTICLE COLLISIONS 142 V. GAS PHASE
KINETICS 143 PART B5: PLASMA DIAGNOSTICS I. OPTICAL EMISSION
SPECTROSCOPY 151 1. OPTICAL EMISSION 2. SPECTROSCOPY 3. ACTINOMETRY 4.
ADVANTAGES/DISADVANTAGES 5. APPLICATION: END-POINT DETECTION II. LASER
INDUCED FLUORESCENCE 161 HI. LASER INTERFEROMETRY 162 IV. FULL-WAFER
INTERFEROMETRY 163 V. MASS SPECTROMETRY 164 PART B6: PLASMA SURFACE
KINETICS I. PLASMA CHEMISTRY 167 II. SURFACE REACTIONS 167 1.
SPONTANEOUS SURFACE ETCHING 2. SPONTANEOUS DEPOSITION 3. ION SPUTTERING
KINETICS 4. ION-ENHANCED CHEMICAL ETCHING HI. LOADING 777 IV.
SELECTIVITY 178 V. DETAILED REACTION MODELING / 79 TABLE OF CONTENTS IX
XIII. OTHER LOCAL DIAGNOSTICS 93 1. MAGNETIC PROBES 2. ENERGY ANALYZERS
3. RF CURRENT PROBE 4. PLASMA OSCILLATION PROBE I. II. PART B7: FEATURE
EVOLUTION AND MODELING FUNDAMENTALS OF FEATURE EVOLUTION IN PLASMA
ETCHING 183 PREDICTIVE MODELING 185 186 III. MECHANISMS OF PROFILE
EVOLUTION 1. ION BOMBARDMENT DIRECTIONALITY 2. ION SCATTERING WITHIN THE
FEATURE 3. DEPOSITION RATE OF PASSIVANTS 4. LINE-OF-SIGHT REDEPOSITION
OF PRODUCTS 5. CHARGING OF SURFACES IN THE FEATURES IV. PROFILE
SIMULATION 190 V. PLASMA DAMAGE 193 1. CONTAMINATION 2. PARTICULATES 3.
GATE OXIDE DAMAGE - PHOTON 4. GATE OXIDE DAMAGE - ELECTRICAL STRESS 5.
LATTICE DAMAGE 6. POST-ETCH CORROSION EPILOGUE: CURRENT PROBLEMS IN
SEMICONDUCTOR PROCESSING I. FRONT-END CHALLENGES 199 1. HIGH-K
DIELECTRICS 2. METAL GATES II. BACK-END CHALLENGES 201 1. COPPER
METALLLIZATION 2. INTERLAYER DIELECTRICS (ILDS) 3. BARRIER MATERIALS
III. PATTERNING NANOMETER FEATURES 204 1. E-BEAM 2. RESIST TRIMMING IV.
DEEP REACTIVE ETCH FOR MEMS 205 V. PLASMA-INDUCED DAMAGE 206 VI. SPECIES
CONTROL IN PLASMA REACTORS 207 199
|
| any_adam_object | 1 |
| author | Chen, Francis F. 1929- Chang, Jane P. |
| author_GND | (DE-588)17201932X |
| author_facet | Chen, Francis F. 1929- Chang, Jane P. |
| author_role | aut aut |
| author_sort | Chen, Francis F. 1929- |
| author_variant | f f c ff ffc j p c jp jpc |
| building | Verbundindex |
| bvnumber | BV024502849 |
| classification_rvk | UR 8000 |
| ctrlnum | (OCoLC)845543187 (DE-599)BVBBV024502849 |
| dewey-full | 621.044 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.044 |
| dewey-search | 621.044 |
| dewey-sort | 3621.044 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Werkstoffwissenschaften / Fertigungstechnik |
| format | Book |
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| indexdate | 2024-07-09T22:00:57Z |
| institution | BVB |
| isbn | 0306474972 9780306474972 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-018477504 |
| oclc_num | 845543187 |
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| physical | IX, 208 S. Ill., graph. Darst. 1 CD-ROM |
| publishDate | 2003 |
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| publishDateSort | 2003 |
| publisher | Springer |
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| spelling | Chen, Francis F. 1929- Verfasser (DE-588)17201932X aut Lecture notes on principles of plasma processing Francis F. Chen and Jane P. Chang New York Springer 2003 IX, 208 S. Ill., graph. Darst. 1 CD-ROM txt rdacontent n rdamedia nc rdacarrier Hier auch später erschienene, unveränderte Nachdrucke (ohne CD-ROM) Plasmaphysik (DE-588)4046259-6 gnd rswk-swf Plasmatechnik (DE-588)4140353-8 gnd rswk-swf Plasmaphysik (DE-588)4046259-6 s DE-604 Plasmatechnik (DE-588)4140353-8 s Chang, Jane P. Verfasser aut GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018477504&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Chen, Francis F. 1929- Chang, Jane P. Lecture notes on principles of plasma processing Plasmaphysik (DE-588)4046259-6 gnd Plasmatechnik (DE-588)4140353-8 gnd |
| subject_GND | (DE-588)4046259-6 (DE-588)4140353-8 |
| title | Lecture notes on principles of plasma processing |
| title_auth | Lecture notes on principles of plasma processing |
| title_exact_search | Lecture notes on principles of plasma processing |
| title_full | Lecture notes on principles of plasma processing Francis F. Chen and Jane P. Chang |
| title_fullStr | Lecture notes on principles of plasma processing Francis F. Chen and Jane P. Chang |
| title_full_unstemmed | Lecture notes on principles of plasma processing Francis F. Chen and Jane P. Chang |
| title_short | Lecture notes on principles of plasma processing |
| title_sort | lecture notes on principles of plasma processing |
| topic | Plasmaphysik (DE-588)4046259-6 gnd Plasmatechnik (DE-588)4140353-8 gnd |
| topic_facet | Plasmaphysik Plasmatechnik |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018477504&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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