Ion implantation of semiconductors
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| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
London
Arnold
1976
|
| Ausgabe: | 1. publ. |
| Schriftenreihe: | Contemporary electrical engineering series
|
| Schlagworte: | |
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MARC
| LEADER | 00000nam a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV021909296 | ||
| 003 | DE-604 | ||
| 005 | 20040301000000.0 | ||
| 007 | t| | ||
| 008 | 930113s1976 xx |||| 00||| eng d | ||
| 020 | |a 0713133589 |9 0-7131-3358-9 | ||
| 020 | |a 0713133651 |9 0-7131-3365-1 | ||
| 035 | |a (OCoLC)2894971 | ||
| 035 | |a (DE-599)BVBBV021909296 | ||
| 040 | |a DE-604 |b ger | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-706 | ||
| 050 | 0 | |a TK7871.85 | |
| 082 | 0 | |a 621.3815/2 | |
| 084 | |a UP 3000 |0 (DE-625)146369: |2 rvk | ||
| 100 | 1 | |a Carter, George |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Ion implantation of semiconductors |c G. Carter ; W.A. Grant |
| 250 | |a 1. publ. | ||
| 264 | 1 | |a London |b Arnold |c 1976 | |
| 300 | |a 214 S. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a Contemporary electrical engineering series | |
| 650 | 4 | |a Ions - Implantation | |
| 650 | 4 | |a Semiconducteurs - Dopage | |
| 650 | 4 | |a Semiconducteurs, Effets du rayonnement sur les | |
| 650 | 4 | |a Ion implantation | |
| 650 | 4 | |a Semiconductor doping | |
| 650 | 4 | |a Semiconductors |x Effect of radiation on | |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Ionenimplantation |0 (DE-588)4027606-5 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 0 | 1 | |a Ionenimplantation |0 (DE-588)4027606-5 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 700 | 1 | |a Grant, William A. |e Verfasser |4 aut | |
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-015124471 | |
Datensatz im Suchindex
| _version_ | 1819261775203270656 |
|---|---|
| any_adam_object | |
| author | Carter, George Grant, William A. |
| author_facet | Carter, George Grant, William A. |
| author_role | aut aut |
| author_sort | Carter, George |
| author_variant | g c gc w a g wa wag |
| building | Verbundindex |
| bvnumber | BV021909296 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.85 |
| callnumber-search | TK7871.85 |
| callnumber-sort | TK 47871.85 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | UP 3000 |
| ctrlnum | (OCoLC)2894971 (DE-599)BVBBV021909296 |
| dewey-full | 621.3815/2 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/2 |
| dewey-search | 621.3815/2 |
| dewey-sort | 3621.3815 12 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| edition | 1. publ. |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01563nam a2200481zc 4500</leader><controlfield tag="001">BV021909296</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20040301000000.0</controlfield><controlfield tag="007">t|</controlfield><controlfield tag="008">930113s1976 xx |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0713133589</subfield><subfield code="9">0-7131-3358-9</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0713133651</subfield><subfield code="9">0-7131-3365-1</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)2894971</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV021909296</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-706</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871.85</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/2</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 3000</subfield><subfield code="0">(DE-625)146369:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Carter, George</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Ion implantation of semiconductors</subfield><subfield code="c">G. Carter ; W.A. Grant</subfield></datafield><datafield tag="250" ind1=" " ind2=" "><subfield code="a">1. publ.</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">London</subfield><subfield code="b">Arnold</subfield><subfield code="c">1976</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">214 S.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Contemporary electrical engineering series</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ions - Implantation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconducteurs - Dopage</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconducteurs, Effets du rayonnement sur les</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ion implantation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductor doping</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="x">Effect of radiation on</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Ionenimplantation</subfield><subfield code="0">(DE-588)4027606-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Ionenimplantation</subfield><subfield code="0">(DE-588)4027606-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Grant, William A.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-015124471</subfield></datafield></record></collection> |
| id | DE-604.BV021909296 |
| illustrated | Not Illustrated |
| indexdate | 2024-12-23T19:47:09Z |
| institution | BVB |
| isbn | 0713133589 0713133651 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-015124471 |
| oclc_num | 2894971 |
| open_access_boolean | |
| owner | DE-706 |
| owner_facet | DE-706 |
| physical | 214 S. |
| publishDate | 1976 |
| publishDateSearch | 1976 |
| publishDateSort | 1976 |
| publisher | Arnold |
| record_format | marc |
| series2 | Contemporary electrical engineering series |
| spelling | Carter, George Verfasser aut Ion implantation of semiconductors G. Carter ; W.A. Grant 1. publ. London Arnold 1976 214 S. txt rdacontent n rdamedia nc rdacarrier Contemporary electrical engineering series Ions - Implantation Semiconducteurs - Dopage Semiconducteurs, Effets du rayonnement sur les Ion implantation Semiconductor doping Semiconductors Effect of radiation on Halbleiter (DE-588)4022993-2 gnd rswk-swf Ionenimplantation (DE-588)4027606-5 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Ionenimplantation (DE-588)4027606-5 s 1\p DE-604 Grant, William A. Verfasser aut 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Carter, George Grant, William A. Ion implantation of semiconductors Ions - Implantation Semiconducteurs - Dopage Semiconducteurs, Effets du rayonnement sur les Ion implantation Semiconductor doping Semiconductors Effect of radiation on Halbleiter (DE-588)4022993-2 gnd Ionenimplantation (DE-588)4027606-5 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4027606-5 |
| title | Ion implantation of semiconductors |
| title_auth | Ion implantation of semiconductors |
| title_exact_search | Ion implantation of semiconductors |
| title_full | Ion implantation of semiconductors G. Carter ; W.A. Grant |
| title_fullStr | Ion implantation of semiconductors G. Carter ; W.A. Grant |
| title_full_unstemmed | Ion implantation of semiconductors G. Carter ; W.A. Grant |
| title_short | Ion implantation of semiconductors |
| title_sort | ion implantation of semiconductors |
| topic | Ions - Implantation Semiconducteurs - Dopage Semiconducteurs, Effets du rayonnement sur les Ion implantation Semiconductor doping Semiconductors Effect of radiation on Halbleiter (DE-588)4022993-2 gnd Ionenimplantation (DE-588)4027606-5 gnd |
| topic_facet | Ions - Implantation Semiconducteurs - Dopage Semiconducteurs, Effets du rayonnement sur les Ion implantation Semiconductor doping Semiconductors Effect of radiation on Halbleiter Ionenimplantation |
| work_keys_str_mv | AT cartergeorge ionimplantationofsemiconductors AT grantwilliama ionimplantationofsemiconductors |