Silicon front-end junction formation technologies
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| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Warrendale, Pa.
Materials Research Society
2002
|
| Schriftenreihe: | Materials Research Society symposia proceedings
717 |
| Schlagworte: | |
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MARC
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| 300 | |a XI, 312 p. |b Ill., graph. Darst. | ||
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Datensatz im Suchindex
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| genre | (DE-588)1071861417 Konferenzschrift 2002 San Francisco Calif. gnd-content |
| genre_facet | Konferenzschrift 2002 San Francisco Calif. |
| id | DE-604.BV014629769 |
| illustrated | Illustrated |
| indexdate | 2024-12-23T15:58:31Z |
| institution | BVB |
| isbn | 1558996532 |
| language | English |
| lccn | 2002029523 |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-009940544 |
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| owner | DE-29T DE-83 |
| owner_facet | DE-29T DE-83 |
| physical | XI, 312 p. Ill., graph. Darst. |
| publishDate | 2002 |
| publishDateSearch | 2002 |
| publishDateSort | 2002 |
| publisher | Materials Research Society |
| record_format | marc |
| series | Materials Research Society symposia proceedings |
| series2 | Materials Research Society symposia proceedings |
| spelling | Silicon front-end junction formation technologies Eds.: Daniel F. Downey ... Warrendale, Pa. Materials Research Society 2002 XI, 312 p. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Materials Research Society symposia proceedings 717 Includes bibliographical references and index Semiconducteurs - Jonctions - Congrès ram Semiconductors Junctions Congresses Technologie (DE-588)4059276-5 gnd rswk-swf Halbleitergrenzfläche (DE-588)4158802-2 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 2002 San Francisco Calif. gnd-content Halbleitergrenzfläche (DE-588)4158802-2 s Technologie (DE-588)4059276-5 s DE-604 Downey, Daniel F. Sonstige oth Materials Research Society symposia proceedings 717 (DE-604)BV001899105 717 |
| spellingShingle | Silicon front-end junction formation technologies Materials Research Society symposia proceedings Semiconducteurs - Jonctions - Congrès ram Semiconductors Junctions Congresses Technologie (DE-588)4059276-5 gnd Halbleitergrenzfläche (DE-588)4158802-2 gnd |
| subject_GND | (DE-588)4059276-5 (DE-588)4158802-2 (DE-588)1071861417 |
| title | Silicon front-end junction formation technologies |
| title_auth | Silicon front-end junction formation technologies |
| title_exact_search | Silicon front-end junction formation technologies |
| title_full | Silicon front-end junction formation technologies Eds.: Daniel F. Downey ... |
| title_fullStr | Silicon front-end junction formation technologies Eds.: Daniel F. Downey ... |
| title_full_unstemmed | Silicon front-end junction formation technologies Eds.: Daniel F. Downey ... |
| title_short | Silicon front-end junction formation technologies |
| title_sort | silicon front end junction formation technologies |
| topic | Semiconducteurs - Jonctions - Congrès ram Semiconductors Junctions Congresses Technologie (DE-588)4059276-5 gnd Halbleitergrenzfläche (DE-588)4158802-2 gnd |
| topic_facet | Semiconducteurs - Jonctions - Congrès Semiconductors Junctions Congresses Technologie Halbleitergrenzfläche Konferenzschrift 2002 San Francisco Calif. |
| volume_link | (DE-604)BV001899105 |
| work_keys_str_mv | AT downeydanielf siliconfrontendjunctionformationtechnologies |