3rd Symposium on Non-Stoichiometric III-V Compounds [8th - 10th October 2001 Erlangen]
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|---|---|
| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
Erlangen
Lehrstuhl für Mikrocharakterisierung, Friedrich-Alexander-Univ.
2001
|
| Schriftenreihe: | Physik mikrostrukturierter Halbleiter
23 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
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MARC
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| 245 | 1 | 0 | |a 3rd Symposium on Non-Stoichiometric III-V Compounds |b [8th - 10th October 2001 Erlangen] |c T. Marek ... Lehrstuhl für Mikrocharakterisierung, Friedrich-Alexander-Universität Erlangen-Nürnberg |
| 246 | 1 | 3 | |a Third Symposium on Non-Stoichiometric III-V Compounds |
| 264 | 1 | |a Erlangen |b Lehrstuhl für Mikrocharakterisierung, Friedrich-Alexander-Univ. |c 2001 | |
| 300 | |a 152 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Physik mikrostrukturierter Halbleiter |v 23 | |
| 650 | 4 | |a Gallium arsenide semiconductors |v Congresses | |
| 650 | 0 | 7 | |a Nichtstöchiometrische Verbindungen |0 (DE-588)4171789-2 |2 gnd |9 rswk-swf |
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| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-009603589 | |
Datensatz im Suchindex
| DE-BY-TUM_call_number | 0001 78.2002 A 226 |
|---|---|
| DE-BY-TUM_katkey | 1259471 |
| DE-BY-TUM_location | Mag |
| DE-BY-TUM_media_number | 040003598470 |
| _version_ | 1820800235863015424 |
| adam_text | CONTENTS
Preface
5
LT(AI)GaAs
and AI(Ga)As oxides for electronic applications
7
J. Champlain, C. Zheng, and U. Mishra
MESFETs fabricated on Be-doped low temperature grown
13
GaAs buffer layers
T.R. Weatherford, P.
Specht, A.A.
Parker, and E.R. Weber
Critical review of optoelectronic applications of ultrafast
19
non -stoichiometric
semiconductors
J.-L. Coutaz and A. Krotkus
Continuous-wave THz imaging with photocond
učtive
25
LT-GaAs antennae
R. Leonhardt,
K.J.
Siebeđ,
H.
Quast,
T.
Lőffíer,
M. Thomson,
and H. G. Roskos
Material
and device
issues
of low-temperature
GaAs for
31
THz photomixers
M. Mikulics, A. Fox, M. Marso, A.
Förster,
and P.
Kordoš
LT-GaAs
recombination layers used in
photomixers
based
37
on quasi-ballistic transport
M. Eckardt, A.
Schwanhäußer,
L
Robledo, A. Fríednch,
Ρ.
Pohl,
P.
Kiesel,
S.
Malzer
G.H. Döhler, and
A.C.
Gossard
Low temperature MBE grown GaAs
gettering
of AlAs oxidation
43
induced defects
M. J.
Čich,
R.
Zhao,
S.
Tzeng, P.
Specht,
and E.R. Weber
Uniform lateral fields in waveguide structures achieved by
49
LT-(AI)GaAs layers
O. Wolst, M. Schardt, M. Kahi, S.
Mälzer,
and
G.H. Döhler
Modeling of low-temperature-grown GaAs transient photo-
55
reflectivity experiments
V. Ortiz, J.
Nagle,
and
A. Alexandrou
Dynamics of mobile carriers
in LT-GaAs at high excitation
61
G.
Segschneider,
H. G.
Roskos,
S. Tautz, P.
Kiesel,
and G. H.
Dõhler
Ion-implanted InGaAs
quantum
well semiconductor
saturable
67
absorber mirrors for passive mode-locking
M. J. Lederer, V.Z.
Kotev,
В.
Luther-Davies, H.H. Tan,
and C.
Jagadish
Conductive non-stoichiometric Ill-V compounds: properties
73
and prospective applications
P.
Specht,
M.J.
Čich,
R.
Zhao, J.
Gebauer,
and E.RWeber
Beryllium
dopant induced stabilization against intermixing
79
and precipitation upon annealing of LT-AIAs/GaAs:Be multiple
quantum wells
K. Tillmann, M. Luysberg, P.
Specht,
M.J.
Čich,
and E.R. Weber
Optoelectronic properties of moderately Beryllium doped
85
low-temperature MBE-grown GaAs
J.-F.
Roux,
J.-L Coutaz, J. Siegert, A.
Gaarder,
S. Marcinkevicius,
A. Wolos, M.
Kaminska,
R. Adomavicius, K.
Bertulis,
and
Α.
Kroöcus
Structural properties of carbon doped LT-GaAs
91
M. Luysberg, D. Meertens, J.
Herfort,
W.
Ulrici,
M.
Moreno, and
K.H. Ploog
Capacitance spectroscopy of
n-i
-η
and p-i-p GaAs sandwich
97
structures with nanoscale As clusters in the ¡-layer
V.V. Chaldyshev, P.N. Brunkov, AM Chemigovski, A. Moskalenko,
N.A. Bert, S.G. Konnikov, V.V. Preobrazhenskii, M.A. Putyato, and
B.R. Semyagin
Annealing induced transition from defect- to cluster
103
dominated carrier dynamics in LT-GaAs
C.
Steen,
P.
Kiesel,
S.
Tautz,
S.
Mälzer,
G.H. Döhler, J.B. Ibbetson,
and
A.C.
Gossard
Optical characterization of low-temperature-grown GaAs
109
for nonlinear optical applications
J. Herfort, M. Giehler, W. Ulrici,
L
Däweritz,
and K.H. Ploog
Hydrogénation
of GaAs films grown at low temperature
115
V.V. Chaldyshev, A.E. Kunitsyn, D.A. Vasyukov, V.A. Kagadei,
D.I.
Proskurovsky, V.V. Preobrazhenskii, M.A. Putyato, andB.R.
Semyagin
Dislocation loops associated with clusters in low-temperature
121
grown GaAs doped with Sb
N.A. Bert, V.V. Chaldyshev, A.E. Romanov,
A.A.
Suvorova,
AL
Kolesnikova, V.V. Preobrazhenskii, M.A. Putyato, B.R. Semyagin,
P. Werner, N.D. Zakharov, and A. Claverie
Surface atomic process of incorporation of excess arsenic
127
in low-temperature-grown GaAs
N.
Otsuka, S. Fukushima, K. Mukai, F. Shimogishi, and
A. Suda
Energy barriers associated with the incorporation of excess
133
As into
GaAs(001):
theoretical and experimental assessments
S. Kunsâgi-Mâté, T.
Marek, C.
Schür, and KP. Strunk
Surface kinetics in low temperature grown GaAs and its
139
consequences
G. Apostolopoulos,
N.
Boukos,
A. Travlos, J.
Herfort, and
K.H. Ploog
Substrate misorientation as additional parameter for low
145
temperature growth of GaAs
С
Schür,
T. Marek,
Н.Р.
Strunk,
S.
Tautz,
С.
Steen,
P.
Kiesel,
S.
Malzer,
G.H.
Döhler,
M.
Nieckę,
F.
Schiuder, R.
Meyer,
and
R.
Knappe
Author index
151
|
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| dewey-full | 621.3815/2 |
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| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
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| illustrated | Illustrated |
| indexdate | 2024-12-23T15:46:09Z |
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| language | English |
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| physical | 152 S. Ill., graph. Darst. |
| publishDate | 2001 |
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| publisher | Lehrstuhl für Mikrocharakterisierung, Friedrich-Alexander-Univ. |
| record_format | marc |
| series | Physik mikrostrukturierter Halbleiter |
| series2 | Physik mikrostrukturierter Halbleiter |
| spellingShingle | 3rd Symposium on Non-Stoichiometric III-V Compounds [8th - 10th October 2001 Erlangen] Physik mikrostrukturierter Halbleiter Gallium arsenide semiconductors Congresses Nichtstöchiometrische Verbindungen (DE-588)4171789-2 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
| subject_GND | (DE-588)4171789-2 (DE-588)4150649-2 (DE-588)1071861417 |
| title | 3rd Symposium on Non-Stoichiometric III-V Compounds [8th - 10th October 2001 Erlangen] |
| title_alt | Third Symposium on Non-Stoichiometric III-V Compounds |
| title_auth | 3rd Symposium on Non-Stoichiometric III-V Compounds [8th - 10th October 2001 Erlangen] |
| title_exact_search | 3rd Symposium on Non-Stoichiometric III-V Compounds [8th - 10th October 2001 Erlangen] |
| title_full | 3rd Symposium on Non-Stoichiometric III-V Compounds [8th - 10th October 2001 Erlangen] T. Marek ... Lehrstuhl für Mikrocharakterisierung, Friedrich-Alexander-Universität Erlangen-Nürnberg |
| title_fullStr | 3rd Symposium on Non-Stoichiometric III-V Compounds [8th - 10th October 2001 Erlangen] T. Marek ... Lehrstuhl für Mikrocharakterisierung, Friedrich-Alexander-Universität Erlangen-Nürnberg |
| title_full_unstemmed | 3rd Symposium on Non-Stoichiometric III-V Compounds [8th - 10th October 2001 Erlangen] T. Marek ... Lehrstuhl für Mikrocharakterisierung, Friedrich-Alexander-Universität Erlangen-Nürnberg |
| title_short | 3rd Symposium on Non-Stoichiometric III-V Compounds |
| title_sort | 3rd symposium on non stoichiometric iii v compounds 8th 10th october 2001 erlangen |
| title_sub | [8th - 10th October 2001 Erlangen] |
| topic | Gallium arsenide semiconductors Congresses Nichtstöchiometrische Verbindungen (DE-588)4171789-2 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
| topic_facet | Gallium arsenide semiconductors Congresses Nichtstöchiometrische Verbindungen Drei-Fünf-Halbleiter Konferenzschrift 2001 Erlangen |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009603589&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV011600531 |
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