Extended abstracts of the 1997 International Conference on Solid State Devices and Materials September 16 - 19, 1997, Hamamatsu, Act City Hamamatsu
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| 245 | 1 | 0 | |a Extended abstracts of the 1997 International Conference on Solid State Devices and Materials |b September 16 - 19, 1997, Hamamatsu, Act City Hamamatsu |
| 264 | 1 | |a Tokyo |b Japan Soc. of Applied Physics |c 1997 | |
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| adam_text | IMAGE 1
EXTENDED ABSTRACTS OF
THE 1997 INTERNATIONAL CONFERENCE ON
SOLID STATE DEVICES AND MATERIALS
SEPTEMBER 16-19, 1997
HAMAMATSU
ACT CITY HAMAMATSU
:
-S
UNIVERSITATSBIBLIOTHEK HANNOVER TECHNISCHE INFORMATIONSBIBLIOTHEK
SPONSORED BY
THE JAPAN SOCIETY OF APPLIED PHYSICS
TECHNICAL COSPONSORED BY
IEEE ELECTRON DEVICES SOCIETY
IN COOPERATION WITH
THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS
IEEE TOKYO SECTION THE INSTITUTE OF ELECTRICAL ENGINEERS OF JAPAN THE
ELECTROCHEMICAL SOCIETY OF JAPAN THE INSTITUTE OF IMAGE INFORMATION AND
TELEVISION ENGINEERS
IMAGE 2
CONTENTS
SEPTEMBER 16, TUESDAY
MAIN HALL
P: OPENING SESSION (10:10-11:55)
10:10 (0) WELCOME ADDRESS, R. ITO, ORGANIZING COMMITTEE CHAIRPERSON
10:20 (1) PROGRESS IN CRYSTAL GROWTH AND CONDUCTIVITY CONTROL OF GROUP
III NITRIDE SEMICONDUC TORS -SEEKING BLUE EMISSION- (INVITED) I.
AKASAKI, MEIJO UNIV., JAPAN 2
11:00 (2) SILICON-BASED IC TECHNOLOGY FOR GIGA-SCALE INTEGRATION ERA
(INVITED) Y. NISHI, TEXAS INSTRUMENTS, U.S.A 4
11:40 (3) SSDM AWARDS PRESENTATION
ROOM A
A-L: SYMPOSIUM ON THIN GATE AND TUNNEL OXIDE (I) (13:20-14:50)
13:20 (1) RELIABILITY AND SCALING OF THIN GATE OXIDE (INVITED) C. HU,
UNIV. CALIFORNIA, U.S.A 6
13:45 (2) ROOT CAUSE ANALYSIS OF THIN GATE OXIDE DEGRADATION DURING
FABRICATION OF ADVANCED CMOS ULSI CIRCUITS (INVITED) S.U. KIM, SEMATECH,
U.S.A 8-9, 574
14:10 (3) MOLECULAR ORBITAL THEORY EXAMINATION INTO THE IMPROVEMENT OF
GATE OXIDE INTEGRITY WITH THE INCORPORATION OF NITROGEN AND FLUORINE T.
MARUIZUMI, J. USHIO AND M. MIYAO, HITACHI, JAPAN 10
14:30 (4) HOPPING-CONDUCTION ENERGY OF HOLES IN SI02 DETERMINED
ACCURATELY BY MOLECULAR OR BITAL CALCULATION
Y. TAKEMURA, J. USHIO, T. MARUIZUMI AND M. MIYAO, HITACHI, JAPAN 12
A-2: SYMPOSIUM ON THIN GATE AND TUNNEL OXIDE (II) (15:10-17:10)
15:10 (1) HIGHLY RELIABLE SI02 FILMS FORMED BY UV-02 OXIDATION A.
TERAMOTO, K. KOBAYASHI, Y. OHNO AND M. HIRAYAMA, MITSUBISHI, JAPAN 14
15:30 (2) HIGHLY RELIABLE INTERPOLY OXIDE USING ECR N20-PLASMA FOR NEXT
GENERATION FLASH MEMORY
N.-I. LEE, J.-W. LEE*, S.-H. HUR*, H.-S. KIM AND C.-H. HAN*, SAMSUNG AND
*KAIST, KOREA 16
15:50 (3) PHOSPHOROUS INCORPORATION IN ULTRATHIN GATE OXIDES AND ITS
IMPACT TO THE NETWORK
STRUCTURE
K. MORINO, S. MIYAZAKI AND M. HIROSE, HIROSHIMA UNIV., JAPAN 18
16:10 (4) ELECTRON BEAM INDUCED DAMAGE OF MOS GATE OXIDE M. KONISHI, M.
KUBOTA AND K. KOIKE, SONY, JAPAN 20
16:30 (5) SCALING OF FLASH MEMORY INTERPOLY DIELECTRICSUSING
NH3-ANNEALED CVD SI02 SINGLE-LAY
ER FILMS
T. KOBAYASHI, A. KATAYAMA, H. KUME AND K. KIMURA, HITACHI, JAPAN 22
16:50 (6) THE EFFECT OF IPA ADSORPTION ON THIN OXIDE K. MOTAI, T. ITOGA
AND T. IRIE, HITACHI, JAPAN
24
17:10-17:40 AUTHOR S CORNER
XV
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ROOM B
B-L: FERROELECTRIC MATERIALS AND DEVICES (I) (13:20-15:05)
13:20 (1) ELECTRONIC STRUCTURE AND DEFECTS OF LEAD-ZIRCONIUM TITANATE
(PZT) AND STRONTIUM BIS MUTH TANTALATE FERROELECTRICS (INVITED) J.
ROBERTSON, CAMBRIDGE UNIV., U.K 26
13:45 (2) MECHANISMS OF SYNCHROTRON X-RAY IRRADIATION-INDUCED DAMAGE IN
(BA,SR)TI03 CAPACI TORS
M. TARUTANI, J. TANIMURA, T. HORIKAWA, M. SUITA, T. KAWAHARA, M.
YAMAMUKA, H. SUMITANI AND K. ONO, MITSUBISHI, JAPAN 28
14:05 (3) AN OPTIMIZED VIA CONTACT SCHEME OF FERAM FOR DOUBLE-LEVEL
METALLIZATION AND BE YOND Y.-S. HWANG, J.-W. LEE, S.-Y. LEE, B.-J. KOO,
D.-J. JUNG, Y.-S. CHUN, M.-H. LEE, D.-W. SHIN, S.-H. SHIN, S.-E. LEE,
B.-H. KIM, N.-S. KANG AND K.-N. KIM, SAMSUNG,
KOREA 30
14:25 (4) A PROPOSAL OF PT/SRBI2TA209/CE02/SI STRUCTURE FOR NON
DESTRUCTIVE READ OUT MEMORY DEVICES D.S. SHIN, Y.H. HAN AND Y.T. KIM*,
KOREA UNIV. AND *KIST, KOREA 32
14:45 (5) THE EFFECT OF CAPACITOR ELECTRODE CONTAMINANT ON HIGH DENSITY
DRAM S DEVICE CHARAC TERISTICS
Y. KAWAI, E. UCHIDA, M. ITOH, M. YOSHIMARU AND J. IDA, OKI, JAPAN 34
B-2: FERROELECTRIC MATERIALS AND DEVICES (II) (15:20-17:00)
15:20 (1) PROPERTIES OF HIGHLY ORIENTED TA2OS ON METAL ELECTRODES K.
KISHIRO, N. INOUE, S.-C. CHEN AND M. YOSHIMARU, OKI, JAPAN 36
15:40 (2) DEPOSITION OF EPITAXIAL YITTRIA-STABILIZED ZIRCONIA (YSZ) ON
SI(100) AND SIMULTANEOUS GROWTH OF AMORPHOUS SI02 INTERLAYER T. HATA, Y.
MASUDA, S. NAKANO, K. SASAKI, Y. HANEDA* AND K. WASA*, KANAZAWA UNIV.
AND *RITE, JAPAN 38
16:00 (3) FINE-GRAINED SRBI2TA209 THIN FILMS BY LOW TEMPERATURE
ANNEALING N. OGATA, Y. ITO, K. ISHIHARA, M. NAGATA, H. URASHIMA, A.
OKUTOH, S. YAMAZAKI, S. MITARAI AND J. KUDO, SHARP, JAPAN 40
16:20 (4) PROPOSE OF NEW MIXTURE TARGET FOR LOW TEMPERATURE AND HIGH
RATE DEPOSITION OF PZT THIN FILMS BY REACTIVE SPUTTERING T. HATA, W.
ZHANG, S. KAWAGOE AND K. SASAKI, KANAZAWA UNIV., JAPAN 42
16:40 (5) NEW LOW TEMPERATURE PROCESSING OF MOCVD-BI4TI3OI2 THIN FILMS
USING BIO* BUFFER LAYER T. KIJIMA, M. USHIKUBO AND H. MATSUNAGA, SHARP,
JAPAN 44
17:00-17:30 AUTHOR S CORNER
ROOM C
C-L: SPECIAL SESSION ON PHOTONIC DEVICE TECHNOLOGIES FOR COMMUNICATION
NETWORKS (I) (13:20-15:20)
13:20 (1) 1.3 YUM SEMICONDUCTOR LASERS ON INGAAS TERNARY SUBSTRATES
TOWARD LOW-THRESHOLD AND TEMPERATURE INSENSITIVE OPERATION (INVITED) H.
SHOJI, K. OTSUBO, T. KUSUNOKI, T. SUZUKI, T. UCHIDA, T. FUJII, Y.
NISHIJIMA, K. NAKAJIMA AND H. ISHIKAWA, FUJITSU LABS., JAPAN 46
13:50 (2) INDEX-GUIDE GALNNAS LASER DIODE FOR OPTICAL COMMUNICATIONS
(INVITED) S. NAKATSUKA, M. KONDOW, T. KITATANI, Y. YAZAWA AND M. OKAI,
HITACHI, JAPAN 48 14:20 (3) HIGH TEMPERATURE OPERATION OF A 1.3-/UM
SPOT-SIZE-CONVERTER INTEGRATED LASER DIODE (SS-LD) (INVITED)
Y. TOHMORI AND Y. ITAYA, NTT, JAPAN 50
14:50 (4) PHOTONIC INTEGRATED CIRCUITS FABRICATED BY
BANDGAP-ENERGY-CONTROLLED SELECTIVE MOVPE TECHNIQUE (INVITED) T. SASAKI,
M. YAMAGUCHI AND K. KOMATSU, NEC, JAPAN 52
XVI
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C-2: SPECIAL SESSION ON PHOTONIC DEVICE TECHNOLOGIES FOR COMMUNICATION
NETWORKS (II) (15:40-17:40)
15:40 (1) WAFER BONDING OF INP TO SI AND ITS APPLICATION TO OPTICAL
DEVICES (INVITED) H. WADA AND T. KAMIJOH, OKI, JAPAN 54
15:10 (2) SELECTIVE OXIDATION OF ALGAAS/GAAS STRUCTURE AND ITS
APPLICATION TO VERTICAL CAVITY LASERS (INVITED) G.M. YANG, D.H. LIM,
J.-H. KIM, K.Y. LIM AND H.J. LEE, CHONBUK NAT L UNIV., KOREA 56
16:40 (3) VCSEL AND ITS APPLICATIONS FOR OPTICAL INTERCONNECTION AND
SWITCH (INVITED) H. KOSAKA, NEC, JAPAN 58
17:10 (4) ULTRAFAST OPTICAL PULSE GENERATION USING SEMICONDUCTOR DEVICES
(INVITED) Y. OGAWA, S. OSHIBA AND S. ARAHIRA, OKI, JAPAN 60
ROOM D
D-L: COMPOUND SEMICONDUCTORS (I) (13:20-15:15)
13:20 (1) NEW DOPING METHOD IN SEMICONDUCTORS PROPOSED BY AB INITIO
ELECTRONIC STRUCTURE CALCU LATION (INVITED) H. KATAYAMA-YOSHIDA AND T.
YAMAMOTO, OSAKA UNIV., JAPAN 62
13:45 (2) IMPROVEMENT IN THE ELECTRICAL PROPERTIES OF GAAS/INAS/GAAS
STRUCTURES THROUGH THEUSE OF (111)A SUBSTRATES H. YAMAGUCHI AND Y.
HIRAYAMA, NTT, JAPAN 64
14:00 (3) CHEMICAL BEAM EPITAXY GROWTH AND CHARACTERIZATION OF
GA(IN)NAS/GAAS K. TAKEUCHI, T. MIYAMOTO, F. KOYAMA AND K. IGA, TOKYO
INST. TECHNOL., JAPAN 66 14:15 (4) GROWTH OF METASTABLE ALLOY INASBI BY
LOW-PRESSURE MOVPE H. OKAMOTO AND K. OE, NTT, JAPAN 68
14:30 (5) RHEED OSCILLATION-BASED OPTIMIZATION OF GROWTH CONDITIONS FOR
GAS-SOURCE MBE GROWTH OF INGAP USING TERTIARYBUTYLPHOSPHINE H. SAI, H.
FUJIKURA AND H. HASEGAWA, HOKKAIDO UNIV., JAPAN 70
14:45 (6) LPE GROWTH OF (3GAAS)J.{(3ZNSE)^(GA2SE3)1 _,,}J_, ALLOY M.
KAJI, H. KATSUNO, M. KIMURA, A. TANAKA AND T. SUKEGAWA, SHIZUOKA UNIV.,
JAPAN 72
15:00 (7) POLYCRYSTALLINE CUGASE2 THIN FILMS GROWN BY CVD WITH 12 AS
TRANSPORT AGENT A. JAGER-WALDAU, N. MEYER, T. WEISS, S. FIECHTER, M. C.
LUX-STEINER, K. TEMPELHOFF* AND W. RICHTER*, HAHN-MEITNER-INST. BERLIN
AND *TECH. UNIV. BERLIN, GERMANY 74
D-2: COMPOUND SEMICONDUCTORS (II) (15:30-17:00)
15:30 (1) DEFECT-CONTROLLED SELECTIVE EPITAXIAL GROWTH OF GAP ON SI BY
MIGRATION-ENHANCED EPITAXY UNDER ATOMIC HYDROGEN IRRADIATION T. TSUJI,
H. YONEZU, M. YOKOZEKI, Y. TAKAGI AND N. OHSHIMA, TOYOHASHI UNIV. TECH
NOL. , JAPAN
7
15:45 (2) BAND-GAP NARROWING IN CARBON DOPED GAAS WITH VARIOUS SUBSTRATE
ORIENTATIONS STU
DIED BY PHOTOLUMINESCENCE SPECTROSCOPY S. CHO, D. LEE, E.K. KIM AND
S.-K. MIN, KIST, KOREA
78
16:00 (3) ATOMIC FORCE MICROSCOPE STUDY OF TWO-DIMENSIONAL DOPANT
DELINEATION BY SELECTIVE
CHEMICAL ETCHING K.-K. CHOI, T.-Y. SEONG, D.-H. LEE*, Y.S. SOHN* AND
C.T. KIM*, KWANGJU INST. SCI. &
TECHNOL. AND *HYUNDAI ELEC, KOREA
80
16:15 (4) ELECTRIC FIELD INDUCED RECOMBINATION CENTERS IN GAAS
A. KAWAHARAZUKA AND Y. HORIKOSHI, WASEDA UNIV., JAPAN 82
16:30 (5) IN-SITU CONTACTLESS CHARACTERIZATION OF MICROSCOPIC AND
MACROSCOPIC PROPERTIES OF
SI-DOPED MBE-GROWN (2X4) GAAS SURFACES T. HASHIZUME, Y. ISHIKAWA, T.
YOSHIDA AND H. HASEGAWA, HOKKAIDO UNIV., JAPAN .... 84
16:45 (6) COMPUTER ANALYSIS OF SURFACE RECOMBINATION PROCESS AT SI AND
COMPOUND SEMICONDUC
TOR SURFACES AND BEHAVIOR OF SURFACE RECOMBINATION VELOCITY
B. ADAMOWICZ, T. SAITOH, T. HASHIZUME AND H. HASEGAWA, HOKKAIDO UNIV.,
JAPAN-86
17:00-17:30 AUTHOR S CORNER
XVN
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SEPTEMBER 17, WEDNESDAY
ROOM A
A-3: SYMPOSIUM ON THIN GATE AND TUNNEL OXIDE (III) (9:00-10:25)
9:00 (1) RELIABILITY CONCERN OF ULTRA-THIN GATE OXIDES (INVITED) A.
TORIUMI AND H. SATAKE, TOSHIBA, JAPAN 88
9:25 (2) GATE VOLTAGE DEPENDENCE OF RELIABILITY FOR ULTRA-THIN OXIDES T.
NIGAM, M. DEPAS, R. DEGRAEVE, M.M. HEYNS AND G. GROESENEKEN, IMEC,
BELGIUM. ... 90 9:45 (3) AN EXPERIMENTAL EVIDENCE TO LINK THE ORIGINS OF
A MODE AND B MODE STRESS IN DUCED LEAKAGE CURRENT
K. OKADA, MATSUSHITA ELEC, JAPAN 92
10:05 (4) SPECTROSCOPIC AND THEORETICAL STUDIES OF INTERFACE STATES AT
ULTRATHIN OXIDE/SI INTERFACES H. KOBAYASHI, Y. YAMASHITA*, A. ASANO*, Y.
NAKATO* AND Y. NISHIOKA**, JAPAN SCI. & TECHNOL., *OSAKA UNIV. AND
**TEXAS INSTRUMENT TSUKUBA R&D CTR., JAPAN 94
A-4: FLASH MEMORIES (10:40-12:00)
10:40 (1) DRAIN DISTURB RELAXATION BY SUBSTRATE BIAS SELECTING SCHEME
FOR SECTOR ERASE FLASH MEMO RY WITH CONVENTIONAL SINGLE STACKED GATE
CELL STRUCTURE
M. YOSHIMI, N. SHINMURA, T. TANIGAMI, K. HAKOZAKI, S. SATO AND K.
IGUCHI, SHARP, JAPAN 96
11:00 (2) BYTE ERASABLE NOR FLASH EEPROM WITH DOUBLE DIFFUSED DRAIN FOR
HIGH PROGRAMMING SPEED M.K. CHO, K.H. YUM, K.S. KIM, J.H. CHOI, S.T. AHN
AND D.M. KIM*, SAMSUNG AND POHANG UNIV. SCI. & TECHNOL., KOREA 98
11:20 (3) SUPPRESSION OF HOLE INJECTION INTO THE TUNNEL OXIDES OF FLASH
MEMORIES Y. OKUYAMA, T. KOBAYASHI AND K. KIMURA, HITACHI, JAPAN 100
11:40 (4) A RADIATION-HARD FLASH CELL USING HORN-SHAPED FLOATING GATE
AND N20 ANNEALING F.-C. JONG, T.-Y. HUANG, T.-S. CHAO*, H.-C. LIN*,
L.-Y. LEU**, K. YOUNG**, C.-H. LIN** AND K.Y. CHIU**, NAT L CHIAO TUNG
UNIV., *NAT L NANO DEVICE LABS, AND
**WINBOND ELEC, TAIWAN 102
12:00-12:20 AUTHOR S CORNER
A-5: DOPING (13:30-15:55)
13:30 (1) DOPANT DIFFUSION IN SI AND SI02 DURING RAPID THERMAL ANNEALING
(INVITED) R.B. FAIR, DUKE UNIV., U.S.A 104
13:55 (2) CALIBRATION OF TCAD MODELS FOR HIGH DOSE IMPURITY DIFFUSION 0.
NISHIO, M. TAKENAKA, E. AOKI, N. MIZUKOSHI AND K. FUJII, SHARP, JAPAN
106 14:15 (3) REDUCTION OF JUNCTION LEAKAGE CURRENT VARIATION IN MEV P
IMPLANT T. HAYASHI, K. HAMADA, K. MIYOSHI, N. NISHIO AND S. SAITO, NEC,
JAPAN 108 14:35 (4) DOMINANT FACTOR FOR THE CONCENTRATION OF PHOSPHORUS
INTRODUCED BY VAPOR PHASE DOP
ING T. SATO, I. MIZUSHIMA AND Y. TSUNASHIMA, TOSHIBA, JAPAN 110
14:55 (5) REDUCTION OF BF2+-IMPLANTATION DOSE TO MINIMIZE THE ANNEALING
TIME FOR ULTRA-SHAL LOW SOURCE/DRAIN JUNCTION FORMATION BELOW 600C K.
KANEMOTO, A. NAKADA AND T. OHMI, UNIV. TOHOKU, JAPAN 112
15:15 (6) NEW NONDESTRUCTIVE CARRIER PROFILING FOR ION IMPLANTED SI
USING INFRARED SPECTROSCOPIC ELLIPSOMETRY T. SAKAMOTO, H. NAKANO, Y.
KAMAKURA AND K. TANIGUCHI, OSAKA UNIV., JAPAN 114
15:35 (7) DEACTIVATION OF BORON IN HIGHLY BORON-DOPED SILICON 1.
MIZUSHIMA, Y. MITANI, M. KOIKE, M. YOSHIKI, M. TOMITA AND S. KAMBAYASHI,
TOSHI
BA, JAPAN 116
WILL
IMAGE 6
A-6: SILICIDE (16:10-18:20)
16:10 (1) NOVEL ULTRA CLEAN SALICIDE TECHNOLOGY USING DOUBLE TITANIUM
DEPOSITED SILICIDE (DTD) PROCESS FOR 0.1 /IM GATE ELECTRODE M. NAKANO,
H. KOTAKI, K. KATAOKA AND S. KAKIMOTO, SHARP, JAPAN 118 16:30 (2)
CHARACTERIZATION OF CORNER INDUCED LEAKAGE CURRENT IN SHALLOW SILICIDED
N7P JUNCTION H.-D. LEE, J.-W. JUNG, H.-S. HWANG, K.-N. LEE, Y.-J. LEE
AND J.-M. HWANG, LG SEMI-CON, KOREA 120 16:50 (3) FORMATION OF
ULTRA-SHALLOW, LOW-LEAKAGE AND LOW-CONTACT-RESISTANCE JUNCTIONS BY
LOW-TEMPERATURE SI-ENCAPSULATED SILICIDATION PROCESS K. INO, Y.
TANIGUCHI AND T. OHMI, UNIV. TOHOKU, JAPAN 122 17:10 (4) SELF-ALIGNED
10-NM BARRIER LAYERFORMATION TECHNOLOGY FOR FULLY SELF-ALIGNED
METALLIZA TION MOSFET H. MATSUHASHI, A. GOTOH, C.-H. LEE, M. YOKOYAMA,
K. MASU AND K. TSUBOUCHI, TOHOKU UNIV., JAPAN 124 17:30 (5) IMPROVEMENT
OF BIT-LINE CONTACT RESISTANCE FOR MEMORY DEVICES WITH SILICIDE GATE
T.H. KIM, Y.J. CHOI, C.Y. MOON, H.C. KOH, J.H. JIN AND B.L. RYU,
SAMSUNG, KOREA... 126 17:50 (6) THE DOUBLE-METAL SCHOTTKYPOWER
RECTIFIER: AN ADJUSTABLE SCHOTTKY BARRIER HEIGHT LOW- POWER-LOSS
DIODES.J. WANG AND J.T. TZENG, NAT L CHANGE KUNG UNIV., TAIWAN 128 18:10
(7)(LN) ULTRA-SHALLOW JUNCTION FORMATION BY ASH3 ADSORPTION METHOD Y.H.
SONG, S. PIDIN, T. KURABAYASHI, H. KURINO AND M. KOYANAGI, TOHOKU
UNIV.,JAPAN 55218:20-18:50 AUTHOR S CORNER ROOM BB-3: SYMPOSIUM ON SOI
TECHNOLOGY (I) (9:00-10:30)9:00 (1) SOI DEVICE TECHNOLOGY FOR
LOW-VOLTAGE AND HIGH-PERFORMANCE PORTABLE COMMUNICATION SYSTEMS
(INVITED)A.O. ADAN, T. NAKA AND A. KAGISAWA, SHARP, JAPAN 1309:30 (2)
MONOLITHIC 2 GHZ AND 4-6 GHZ LOW NOISE AMPLIFIERS FABRICATED ON A SIMOX
WAFER M. HARADA AND T. TSUKAHARA, NTT, JAPAN 1329:50 (3) DYNAMIC DATA
RETENTION DEGRADATION IN FD-SOI DRAM CELLS DUE TO SOURCE-INDUCEDCHARGE
ACCUMULATION(SICA) EFFECTJ.-H. SIM AND K. KIM, SAMSUNG, KOREA 13410:10
(4) HIGH SPEED AND LOW VOLTAGE OPERATION OF CMOS INVERTERS USING
SOI-MOSFET WITH BODY TERMINALT. MATSUMOTO, N. TERAO*, S. PIDIN, H.
KURINO AND M. KOYANAGI, TOHOKU UNIV. AND*RICOH, JAPAN 136B-4: SYMPOSIUM
ON SOI TECHNOLOGY (II) (10:50-12:00)10:50 (1) SIMULATION ON A NOVEL
SUB-0.1 PM BODY DRIVEN SOI-MOSFET (BD-SOIMOS) FOR SMALLLOGIC SWING
OPERATIONR. KOH, NEC, JAPAN 13811:10 (2) A NEW BASIC ELEMENT FOR NEURAL
LOGIC CIRCUITSY. OMURA, KANSAI UNIV., JAPAN 14011:30 (3) NEW ANALYTICAL
MODEL FOR SUBTHRESHOLD CURRENT IN SHORT-CHANNEL FULLY-DEPLETED SOI
MOSFETS S. PIDIN AND M. KOYANAGI, UNIV. TOHOKU, JAPAN 14211:50 (4)(LN)
NEW MEASUREMENT TECHNIQUE OF SUB-BANDGAP IMPACT IONIZATION CURRENT BY
TRANSIENTCHARACTERISTICS OF PARTIALLY DEPLETED SOI MOSFETS T. SARAYA, M.
TAKAMIYA, T.N. DUYET AND T. HIRAMOTO, UNIV. TOKYO, JAPAN 554XIX
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B-5: SYMPOSIUM ON SOI TECHNOLOGY (III) (13:30-15:10)
13:30 (1) EVALUATION OF ELECTRON TRAP LEVELS IN SIMOX BURIED OXIDE BY
TRANSIENT PHOTOCURRENT
SPECTROSCOPY Y. MIURA, K. HAMADA, T. KITANO AND A. OGURA, NEC, JAPAN 144
13:50 (2) SUPPRESSING PLASMA INDUCED DEGRADATION OF GATE OXIDE BY USING
SILICON-ON-INSULATOR STRUCTURES
K. ARITA, M. AKAMATSU AND T. ASANO, KYUSHU INST. TECHNOL., JAPAN 146
14:10 (3) PRECISE MEASUREMENT OF STRAIN IN SOI INDUCED BY LOCAL
OXIDATION S. KIMURA AND A. OGURA, NEC, JAPAN 148
14:30 (4) SUB-0.25 ;XM DEVICES AND 16K SRAM WITH SELECTIVE-EPI
SOURCE/DRAIN ON ULTRA-THIN SOI
C. RAYNAUD, O. FAYNOT, J.L. PELLOIE, J. MARGAIL, V. FERLET*, A.
QUEMENEUR*, R. WESTHOFF** AND M. ROBINSON**, LETI, CEA BRUYERES LE
CHATEL, FRANCE AND LSRL,
U.S.A 150
14:50 (5) EPITAXIAL SI ON A1203 FILMS GROWN WITH 02 GAS BY UHV-CVD
METHOD T. KIMURA, A. SENGOKU, Y. MORIYASU AND M. ISHIDA, TOYOHASHI UNIV.
TECHNOL.,
JAPAN 152
B-6: SYMPOSIUM ON SOI TECHNOLOGY (IV) (15:30-16:50)
15:30 (1) MOBILITYENHANCEMENT OF SOI MOSFETS DUE TO SUBBAND MODULATION
IN ULTRA-THIN SOI FILMS
S. TAKAGI, J. KOGA AND A. TORIUMI, TOSHIBA, JAPAN 154
15:50 (2) PHONON-LIMITED ELECTRON MOBILITY IN ULTRA-THIN SOI MOSFETS M.
SHOJI AND S. HORIGUCHI, NTT, JAPAN 156
16:10 (3) NON-STATIONARY ELECTRON/HOLE TRANSPORT IN SUB-0.1 FIM MOS
DEVICES -DEGRADATION MECHANISM AND LOW-POWER APPLICATIONSR. OHBA AND T.
MIZUNO, TOSHIBA, JAPAN 158
16:30 (4) REDUCTION OF THE FLOATING-BODY EFFECT IN SOI MOSFETS BY USING
SCHOTTKY SOURCE/DRAIN CONTACTS
M. NISHISAKA AND T. ASANO, KYUSHU INST. TECHNOL., JAPAN 160
B-7: SYMPOSIUM ON SOI TECHNOLOGY (V) (16:50-17:50)
16:50 (1) APPLICATION OF REVERSED SILICON WAFER DIRECT BONDING TO
THIN-FILM SOI POWER ICS T. ISHIYAMA, S. MATSUMOTO, Y. HIRAOKA, T. SAKAI,
T. YACHI, A. ITOH* AND Y. ARIMOTO*, NTT AND *FUJITSU LABS., JAPAN 162
17:10 (2) A HYBRID LATERAL SOI BMFET WITH HIGH CURRENT GAIN D.-Y. KIM,
S.-D. KIM*, M.-K. HAN AND Y.-I. CHOI**, SEOUL NAT L UNIV., *HYUNDAI
ELEC. IND. AND **AJOU UNIV., KOREA 164
17:30 (3) LONG-TERM RELIABILITY OF THE BLOCKING CAPABILITY AND FAILURE
VOLTAGE OF ELECTROSTATIC DISCHARGE(ESD) OF SOI HIGH-VOLTAGE DEVICE AND
IC H. SUMIDA, A. HIRABAYASHI AND H. SHIMABUKURO, FUJI ELEC, JAPAN 166
17:50-18:20 AUTHOR S CORNER
ROOM C
C-3: SEMICONDUCTOR PHOTONIC DEVICES AND FABRICATION TECHNOLOGIES (I)
(9:00-10:25)
9:00 (1) VAPOR PHASE EPITAXIAL LIFTOFF OF GAAS (INVITED) W. CHANG, G.A.
PIKE, C.-P. KAO AND E. YABLONOVITCH, UNIV. CALIFORNIA, U.S.A 168 9:25
(2) STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF INP AIR/SEMICONDUCTOR
GRATINGS FORMED BY MASS-TRANSPORT ASSISTED WAFER FUSION TECHNIQUE
M. IMADA AND S. NODA, KYOTO UNIV., JAPAN 170
9:40 (3) INGAASP LASER ON GAAS FABRICATED BY THE SURFACE ACTIVATED WAFER
DIRECT BONDING METHOD AT ROOM TEMPERATURE T. CHUNG, H. TAKAGI*, N.
HOSODA AND T. SUGA, UNIV. TOKYO AND *AIST, JAPAN 172
9:55 (4) 30NM WAVELENGTH TUNABLE VERTICAL CAVITY LASERS F. SUGIHWO, M.C.
LARSON* AND J.S. HARRIS, JR., STANFORD UNIV., U.S.A. AND *HITACHI, JAPAN
174
XX
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10:10 (5) HEAVILY P-TYPE DOPED ALAS GROWTH ON GAAS (311)B SUBSTRATE
USING CARBON AUTO-DOP ING FOR LOW RESISTANCE GAAS/ALAS DISTRIBUTED
BRAGG REFLECTORS A. MIZUTANI, N. HATORI, N. OHNOKI, N. NISHIYAMA, N.
OHTAKE, F. KOYAMA AND K. IGA, TOKYO INST. TECHNOL., JAPAN 176
C-4: SEMICONDUCTOR PHOTONIC DEVICES AND FABRICATION TECHNOLOGIES (II)
(10:45-12:20)
10:45 (1) INTEGRATED TWIN-GUIDE CORNER REFLECTOR LASERS WITH
SURFACE-GRATING-ETCHING FOR SIMPLE MODE SELECTIVITY S.-K. HONG AND Y.-S.
KWON, KAIST, KOREA 178
11:00 (2) HIGH-POWER OPERATION OF NON-BIASED OPTICAL BISTABLE DEVICES
USING MULTIPLE QUANTUM WELL PINIP-DIODES O.-K. KWON, K.-S. LEE, Y.-S.
LIM, E.-H. LEE AND B.-T. AHN*, ETRI AND *KAIST, KOREA 180
11:15 (3) TRANSPORT AND OPTICAL PROPERTIES OF SINGLE QUANTUM WELL
INFRARED PHOTODETECTORS Y. SHIMADA AND K. HIRAKAWA, UNIV. TOKYO, JAPAN
182
11:30 (4) IMPROVED RESPONSE OF UNI-TRAVELING-CARRIER PHOTODIODES BY
CARRIER INJECTION N. SHIMIZU, N. WATANABE, T. FURUTA AND T. ISHIBASHI,
NTT, JAPAN 184
11:45 (5) HIGHLY RELIABLE OPERATION OF INGAALAS WAVEGUIDE PHOTODIODES
FORACCESS NETWORK SYS TEMS
H. NAKAMURA, M. SHISHIKURA, S. TANAKA, Y. MATSUOKA, T. ONO* AND S.
TSUJI, HITACHI AND *HITACHI DEVICE ENG., JAPAN 186
12:00 (6)(LN) LOW THRESHOLD AND RECORD HIGH TO (140 K) LONG WAVELENGTH
STRAINED QUANTUM WELL LASERS ON INGAAS TERNARY SUBSTRATES K. OTSUBO, H.
SHOJI, T. KUSUNOKI*, T. SUZUKI*, T. UCHIDA, Y. NISHIJIMA*, K. NAKAJI MA
AND H. ISHIKAWA, RWCP OPTICAL INTERCONNECTION FUJITSU LAB. AND *FUJITSU
LABS.,
JAPAN 556
12:10 (7)(LN) INCREASED SATURATION INTENSITY AND HIGH-INPUT-POWER
ALLOWABLE INGAAS/INALAS MQW MODULATORS BURIED IN SEMI-INSULATING INP K.
WAKITA, I. KOTAKA, R. IGA, S. KONDO AND Y. NOGUCHI, NTT, JAPAN 558
12:20-12:40 AUTHOR S CORNER
C-5: SYMPOSIUM ON WIDE BANDGAP SEMICONDUCTORS: FROM CRYSTAL GROWTH TO
DEVICE FABRICATION (I) (13:30-15:40)
13:30 (1) FABRICATION OF GAN QUANTUM DOTS AND THEIR OPTICAL PROPERTIES
(INVITED) S. TANAKA, P. RAMVALL, S. NOMURA AND Y. AOYAGI, INST. PHYSICAL
& CHEMICAL RES.,
JAPAN 188
13:55 (2) SELECTIVE AREA GROWTH OF WIDEGAP II-VI SEMICONDUCTORS ON
PATTERNED SUBSTRATES A. UETA, A. AVRAMESCU, K. UESUGI, T. NUMAI, I.
SUEMUNE, H. MACHIDA* AND H. SHIMOYAMA*, HOKKAIDO UNIV. AND *TRICHEMICAL
LAB., JAPAN 190
14:10 (3) GAN-RICH SIDE OF GANAS GROWN BY GAS SOURCE MBE K. IWATA, H.
ASAHI, R. KUROIWA, K. ASAMI AND S. GONDA, OSAKA UNIV., JAPAN 192 14:25
(4) HIGH QUALITY CUBIC GAN GROWTH ON GAAS (100) SUBSTRATES BY
METALORGANIC VAPOR PHASE
EPITAXY J. WU, H. YAGUCHI, K. ONABE, Y. SHIRAKI AND R. ITO, UNIV. TOKYO,
JAPAN 194
14:40 (5) ELECTRICAL PROPERTIES OF ZNSE/ZNSE HOMOINTERFACES FORMED BY
MBE REGROWTH PROCESS Y. YAMAGATA, K. FUJIWARA, T. SAWADA, K. IMAI, K.
SUZUKI AND I. TSUBONO, HOKKAIDO INST. TECHNOL., JAPAN 196
14:55 (6) ESTIMATION OF DIRECT-TO-INDIRECT CROSSOVER OF CUBIC ALAGAI_A-N
ALLOY A. NAKADAIRA AND H. TANAKA, NTT, JAPAN 198
15:10 (7) OHMIC CONTACT OF P-TYPE ZNSE USING HEAVILYALKALINE DOPED
P+-ZNSE BY EXCIMER LASER DOPING TECHNIQUE
T. AOKI, A. ISHIBASHI*, M. NAGAI* AND Y. HATANAKA, SHIZUOKA UNIV. AND
*SONY,
JAPAN 200
15:25 (8) SHALLOW-DEEP TRANSITION OF NITRGEN ACCEPTOR IN BLUE
SEMICONDUCTOR LASER MATERIAL ZNMGSSE T. YAMAGUCHI, K. ANDO*, K.
KOIZUMI*, H. INOZUME*, H. ISHIKURA*, T. ABE* AND H. KASADA*, NIPPON
CERAMIC AND *TOTTORI UNIV., JAPAN 202
XXI
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C-6: SYMPOSIUM ON WIDE BANDGAP SEMICONDUCTORS: FROM CRYSTAL GROWTH TO
DEVICE
FABRICATION (II) (16:00-18:30)
16:00 (1) FABRICATION AND DEVICE CHARACTERIZATION OF BURIED RIDGE II-VI
BLUE-GREEN LASER DIODES
(INVITED)
P.F. BAUDE, F.R. CHIEN, G.M. HAUGEN, D.C. GRILLO, T.J. MILLER AND M.A.
HAASE, 3M,
U.S.A 204
16:25 (2) EFFICIENT BLUE AND GREEN ELECTROLUMINESCENT DEVICES FROM
CONJUGATED POLYMERS (INVITED)
Y. YANG, UNIV. CALIFORNIA, U.S.A 206
16:50 (3) MICROCAVITY DEVICE STRUCTURES AND LANTHANIDE COMPLEXES FOR
NARROW BANDWIDTH ORGANIC
LIGHT EMITTING DIODES P. URBACH, S. DIRR, H.-H. JOHANNES, S. WIESE AND
W. KOWALSKY, TU BRAUNSCHWEIG,
GERMANY 208
17:05 (4) HIGH-REFLECTIVITY ZNSE/ZNS DISTRIBUTED BRAGG REFLECTORS IN
BLUE REGION GROWN ON (311)B
GAAS SUBSTRATES T. TAWARA, M. ARITA, K. UESUGI AND I. SUEMUNE, HOKKAIDO
UNIV., JAPAN 210 17:20 (5) RADIATIVE RECOMBINATION OF HOT ELECTRONS IN
INGAN SINGLE QUANTUM WELL BLUE LEDS T. TAGUCHI, H. KUDO AND Y. YAMADA,
YAMAGUCHI UNIV., JAPAN 212
17:35 (6) STIMULATED EMISSION FROM ZNSE-BASED LASER DIODE STRUCTURE
GROWN BY PHOTOASSISTED MOVPE WITH ANNEALING TECHNIQUE K. OGATA, N.
NISHIYAMA, D. KAWAGUCHI, G. PENG, S. FUJILA AND S. FUJILA, KYOTO UNIV.,
JAPAN 214
17:50 (7) ABSORPTION COEFFICIENT MEASUREMENTS OF MGZNCDSE II-VI
COMPOUNDS ON INP SUBSTRATES AND QUANTUM CONFINED STARK EFFECT IN
ZNCDSE/MGZNCDSE MULTIPLE QUANTUM WELLS H. HATTORI, I. NOMURA, H. SHINBO,
T. NAGANO, M. HARAGUCHI, T. MORITA, A. KIKUCHI AND K. KISHINO, SOPHIA
UNIV., JAPAN 216
18:05 (8) REACTIVE ION BEAM ETCHING AND OVERGROWTH PROCESS FOR
FABRICATION OF INGAN INNER STRIPE LASER DIODES S. NUNOUE, M. YAMAMOTO,
M. SUZUKI, C. NOZAKI, J. NISHIO, L. SUGIURA, M. ONOMURA, K. ITAYA AND M.
ISHIKAWA, TOSHIBA, JAPAN 218
18:20 (9)(LN) EXPERIMENTAL EVIDENCE OF ZNCDSE QUANTUM WIRES ACHIEVED BY
STRAIN-INDUCED LATERAL CONFINEMENT * E. VANELLE, B.P. ZHANG, T. YASUDA,
W.X. WANG, Y. SEGAWA AND T. ITOH*. INST. PHYSI CAL & CHEMICAL RES. AND
*TOHOKU UNIV., JAPAN 560
18:30-19:00 AUTHOR S CORNER
ROOM D
D-3: SPECIAL SESSION ON STM/AFM RELATED TECHNOLOGIES FOR DEVICES (I)
(9:00-10:30)
9:00 (1) UHV-STM NANOFABRICATION AND SEMICONDUCTOR INTERFACE
CHARACTERIZATION: TRANSITIONS TO CMOS TECHNOLOGY (INVITED)
J.W. LYDING, K. HESS, G.C. ABELN, E.T. FOLEY, J. LEE, Z. CHEN, I.C.
KIZILYALLI* AND P. AVOURIS**, UNIV. ILLINOIS, *LUCENT TECHNOLOGIES AND
**IBM, U.S.A 220
9:30 (2) HIGH DENSITY DATA STORAGE USING MICROMACHINED PROBES (INVITED)
H.J. MAMIN, R.P. RIED, B.D. TERRIS, D. RUGAR, B.W. CHUI* AND T.K.
KENNY*, IBM AND *STANFORD UNIV., U.S.A 222
10:00 (3) THEORY OF ATOMIC AND ELECTRONIC PROCESSES INDUCED BY THE TIP
OF SPM (INVITED) M. TSUKADA AND N. KOBAYASHI, UNIV. TOKYO, JAPAN 224
D-4: SPECIAL SESSION ON STM/AFM RELATED TECHNOLOGIES FOR DEVICES (II)
(10:50-12:20)
10:50 (1) NEAR-FIELD OPTICAL SPECTROSCOPY OF SINGLE QUANTUM DOTS AND
RELATED MATERIALS/DEVICES (INVITED)
T. SAIKI, K. NISHI* AND M. OHTSU**, KAST, *NEC AND **TOKYO INST.
TECHNOL., JAPAN... 226 11:20 (2) ADVANCED SCANNING PROBE METHODS FOR THE
NANOMETER, GIGAHERTZ AGE (INVITED) A.S. HOU, PARK SCIENCE INSTRUMENTS,
U.S.A 228
11:50 (3) FUNCTIONAL PROBING OF NANODEVICES BY SCANNING MAXWELL-STRESS
MICROSCOPY (INVITED) H. YOKOYAMA, ETL, JAPAN 230
XXU
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D-5: COMPOUND SEMICONDUCTORS (III) (13:30-15:45)
13:30 (1) TERAHERTZ EMISSION FROM QUANTUM BEATS IN COUPLED QUANTUM WELLS
N. SEKINE, K. HIRAKAWA AND Y. ARAKAWA, UNIV. TOKYO, JAPAN 232
13:45 (2) PHOTOCURRENT AND PHOTOLUMINESCENCE AFFECTED BY T-X ELECTRON
TRANSFER IN TYPE-I GAAS/ ALAS SUPERLATTICES H. MIMURA, M. HOSODA*, N.
OHTANI* ANDK. YOKOO, TOHOKU UNIV. AND *ATR, JAPAN... 234
14:00 (3) INFLUENCE OF T-X RESONANCE ON CURRENT-VOLTAGE CHARACTERISTICS
IN GAAS/INALAS STRAINED SUPERLATTICES
K. KUROYANAGI, N. OHTANI, N. EGAMI, K. TOMINAGA, M. ANDO* AND M.
NAKAYAMA*, ATR AND *OSAKA CITY UNIV., JAPAN 236
14:15 (4) R-X TUNNELING IN GAAS/ALAS/GAAS HETEROSTRUCTURE Y.N. KHANIN,
E.E. VDOVIN, K.S. NOVOSELOV, Y.V. DUBROVSKII, T.G. ANDERSSON*, P.
OMLING** AND S.-B. CARLSON**, RUSSIAN ACADEMY SCIENCES, RUSSIA,
*CHALMERS UNIV. TECHNOL. AND **LUND UNIV., SWEDEN 238
14:30 (5) OBSERVATION OF RESONANCES BY INDIVIDUAL ENERGY LEVELS IN
INGAAS/ALAS TRIPLE BARRIER RESONANT TUNNELING DIODES J. JO, Y.I. CHOI,
D.M. KIM*, K. ALT** AND K.L. WANG**, AJOU UNIV., *KOOKMIN UNIV., KOREA
AND **UNIV. CALIFORNIA, U.S.A 240
14:45 (6) TRANSPORT ANISOTROPY OF SI DELTA-DOPED LAYER IN INP GROWN BY
OMVPE M. SUHARA, K. SATO, H. HONJI, H. NAKAMURA, Y. MIYAMOTO AND K.
FURUYA, TOKYO INST. TECHNOL., JAPAN 242
15:00 (7) MAGNETO-TRANSPORT AND WAVEFUNCTION SCARRING IN QUANTUM DOTS
AND WIRES Y. OCHIAI, Y. OKUBO, N. SASAKI, K. YAMAMOTO, J.P. BIRD*, K.
ISHIBASHI*, Y. AOYAGI*, T. SUGANO*, R. AKIS** AND D.K. FERRY**, CHIBA
UNIV., *INST. PHYSICAL & CHEMICAL RES., JAPAN AND **ARIZONA STATE UNIV.,
U.S.A 244
15:15 (8) HOT-PHONON EFFECTS ON HIGH-FREQUENCY PERFORMANCE
OFTWO-DIMENSIONAL HOT ELECTRONS IN GAAS AND IN0.53GAO,47AS QUANTUM WELLS
S.K. SARKAR, P.K. GHOSH* AND D. CHATTOPADHYAY*, BENGAL ENG. COLLEGE AND
*UNIV. CALCUTTA, INDIA 246
15:30 (9) INTERBAND FARADAY ROTATION IN FERROMAGNETIC SEMICONDUCTOR (GA,
MN)AS T. KUROIWA, T. YASUDA*, F. MATSUKURA, A. SHEN, Y. SUGAHARA, Y.
OHNO, Y. SEGAWA* AND H. OHNO, TOHOKU UNIV. AND *INST. PHYSICAL &
CHEMICAL RES., JAPAN 248
D-6: NEW MATERIALS (16:05-17:50)
16:05 (1) QUANTUM INTERFERENCE IN LASRCUO FILM IRRADIATED BY 30 THZ
LASER LIGHT AT ROOM TEM PERATURE M. SUGAHARA, H.Q. YIN, H.F. LU, H.
KANEDA, N. HANEJI AND N. YOSHIKAWA, YOKOHA MA NAT L UNIV., JAPAN 250
16:20 (2) FABRICATION OF SUPERCONDUCTOR-CONSTRICTIONS-SUPERCONDUCTOR
MESOSCOPIC DEVICES BY SELECTIVE NIOBIUM ANODIZATION PROCESS
A. SAITO, Y. MISAKI, A. KAWAI AND K. HAMASAKI, NAGAOKA UNIV. TECHNOL.,
JAPAN ... .252 16:35 (3) DEPENDENCE OF CATHODOLUMINESCENT AND ELECTRICAL
PROPERTIES OF PHOSPHORS WITH CONDUCT ING LAYER BY SOL-GEL METHOD ON
LAYER THICKNESS
H. KOMINAMI, K. HORIKAWA, T. AOKI, T. NAKAMURA, Y. NAKANISHI AND Y.
HATANAKA, SHIZUOKA UNIV., JAPAN 254
16:50 (4) A INSITU VACUUM ENCAPSULATED NOVEL LATERAL FIELD EMITTER
TRIODE WITH TITANIUM CATHODE
C.-M. PARK, M.-S. LIM, M.-K. HAN AND Y.-I. CHOI*, SEOUL NATT UNIV. AND
*AJOU UNIV., KOREA 256
17:05 (5) SUB-MICRON TUNGSTEN CARBIDE/AMORPHOUS CARBON STACKED DIODE
FABRICATED BY IONAND ELECTRON-BEAM-INDUCED DEPOSITION TECHNIQUE N.
MIURA, T. NUMAGUCHI, A. YAMADA AND M. KONAGAI, TOKYO INST. TECHNOL.,
JAPAN.. .258
17:20 (6) FREQUENCY CONVERSION WITH ORGANIC-ON-INORGANIC HETEROSTRUCTURE
DIODES J. SCHOBEL, P. URBACH, F. FELBIER AND W. KOWALSKY, TU
BRAUNSCHWEIG, GERMANY 260
17:35 (7) FABRICATION OF TRIS(8-HYDROXYQUINOLINE) ALUMINUM
(ALQ3)/POLY(N-VINYLCARBAZOLE) (PVK) SUPERLATTICES STRUCTURE AND ITS USE
FOR ELECTROLUMINESCENT DEVICE C. BAIJUN AND L. SHIYONG, JILIN UNIV.,
CHINA 262
17:50-18:20 AUTHOR S CORNER
XXIN
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SEPTEMBER 18, THURSDAY
ROOM A
A-7: SPECIAL SESSION ON ADVANCED MEMORY TECHNOLOGIES (I) (9:00-10:15)
9:00 (1) FROM EXPERIENCES OF TRI-CULTURAL DRAM ALLIANCE PROJECT
(INVITED) S. SHINOZAKI, TOSHIBA, JAPAN 264
9:25 (2) PROSPECTS FOR OPTICAL-, EB-, AND X-RAY LITHOGRAPHY FOR GIGA-BIT
MEMORY: ADVANTAGES AND DISADVANTAGES (INVITED) H. FUKUDA, HITACHI, JAPAN
266
9:50 (3) STACKED CAPACITOR DRAM CELL TECHNOLOGY (INVITED) K. KOYAMA,
NEC, JAPAN 268
A-8: SPECIAL SESSION ON ADVANCED MEMORY TECHNOLOGIES (II) (10:35-11:50)
10:35 (1) TRENCH CAPACITOR DRAM TECHNOLOGY FOR 256MB AND BEYOND
(INVITED) G. BRONNER, IBM, U.S.A 270
11:00 (2) A PROCESS INTEGRATION OF (BA, SR)TI03 CAPACITOR INTO 256M DRAM
(INVITED) C.S. HWANG, B.T. LEE, H. HORII, K.H. LEE, W.D. KIM, H.-J. CHO,
C.S. KANG, S.I. LEE AND M.Y. LEE, SAMSUNG, KOREA 272
11:25 (3) PPRAM (PARALLEL PROCESSING RAM): A MERGED-DRAM/LOGIC
SYSTEM-LSI ARCHITECTURE (INVITED) K. MURAKAMI, K. INOUE AND H. MIYAJIMA,
KYUSHU UNIV., JAPAN 274
A-9: SPECIAL SESSION ON ADVANCED MEMORY TECHNOLOGIES (HI) (13:30-14:20)
13:30 (1) FLASH MEMORY TECHNOLOGICAL SURVEY FOR FUTURE SCALING (INVITED)
N. AJIKA AND H. MIYOSHI, MITSUBISHI, JAPAN 276
13:55 (2) FABRICATION TECHNOLOGY OF FERROELECTRIC MEMORIES (INVITED) T.
NAKAMURA, Y. FUJIMORI, N. IZUMI AND A. KAMISAWA, ROHM, JAPAN 278
A-10: SYMPOSIUM ON INTERCONNECTION TECHNOLOGY CHOICE FOR HIGH
PERFORMANCE AND HIGH RELIABILITY ULSIS (I) (14:30-16:15)
14:30 (1) LOOMING PROBLEMS AND SOME PROSPECTIVE SOLUTIONS IN POST-0.25
//M INTERCONNECT TECH NOLOGY (INVITED) O.S. NAKAGAWA AND S.-Y. OH,
HEWLETT-PACKARD, U.S.A 280
14:55 (2) FORMATION OF LOW-RESISTIVITY GATE ELECTRODE SUITABLE FOR THE
FUTURE DEVICES USING CLUSTERED DCS-WSIX POLYCIDE J.S. BYUN, B.H. LEE,
J.-S. PARK, D.-K. SOHN AND J.J. KIM, LG SEMICON, KOREA 282 15:15 (3)
ADVANCED TI SILICIDE TECHNOLOGY WITH BUFFER THIN AL LAYER
A. KISHI, T. DOI, S. OHNISHI, K. IGUTI, K. SAKIYAMA, J.-S. MAA* AND S.T.
HSU*, SHARP, JAPAN AND *SHARP MICROELEC. TECHNOL., U.S.A 284
15:35 (4) W-PLUG COMMON CONTACT WITH COSI2 OHMIC LAYER FOR SCALED DRAM
AND MERGED DRAM IN LOGIC (MDL) DEVICES S. CHOI, B.-Y. YOO, H.-D. LEE,
H.-K. KANG AND M.-Y. LEE, SAMSUNG, KOREA 286 15:55 (5) A RELIABLE DOUBLE
LEVEL INTERCONNECTION TECHNOLOGY FOR GIGA BIT DRAMS USING SI02
MASK AL ETCHING AND PECVD SIOF T. YOKOYAMA, Y. YAMADA, K. KISHIMOTO, H.
KAWAMOTO, H. GOMI AND K. UENO, NEC, JAPAN 288
XXIV
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A-LL: SYMPOSIUM ON INTERCONNECTION TECHNOLOGY CHOICE FOR HIGH
PERFORMANCE AND HIGH RELIABILITY ULSIS (II) (16:30-18:30)
16:30 (1) DIRECTIONAL PLASMA CVD TECHNOLOGY FOR SUB-QUARTER MICROMETER
FEATURE SIZE MULTILEVEL INTERCONNECTION
Y. KUDOH, Y. HOMMA*, N. SAKUMA* AND T. FURUSAWA*, HITACHI ELEC. ENG. AND
*HITACHI, JAPAN 290
16:50 (2) HEAT AND MOISTURE RESISTANCE OF LOW-CAPACITANCE MULTILEVEL
INTERCONNECTIONS USING LOW-PERMITTIVITY ORGANIC SPIN-ON GLASS T.
FURUSAWA AND Y. HOMMA, HITACHI, JAPAN 292
17:10 (3) INITIAL STAGES OF CU GRQWTH ON POLYIMIDE DEPOSITED BY IONIZED
CLUSTER BEAM N.Y. KIM, C.E. HONG, H.-S. YOON*, S.Y. KIM*, K.W. KIM**,
Y.S. LEE* AND C.N. WHANG*, SOONGSIL UNIV., *YONSEI UNIV. AND **SUNMOON
UNIV., KOREA 294
17:30 (4) THE EFFECT OF FILM TEXTURE AND ZIRCONIUM DIFFUSION ON
RELIABILITY AGAINST ELECTROMIGRATION FOR CVD COPPER N. AWAYA AND T.
KOBAYASHI, NTT, JAPAN 296
17:50 (5) THE EFFECT OF UNDERLAYER TEXTURE ON CU FILM ORIENTATION IN
CU/REFRACTORY-METAL STRUC TURE
K. ABE, Y. HARADA AND H. ONODA, OKI, JAPAN 298
18:10 (6) PLASMA ETCHING OF COPPER FILMS USING ULTRA VIOLET RADIATION
K.-S. CHOI AND C.-H. HAN, KAIST, KOREA 300
18:30-19:00 AUTHOR S CORNER
ROOM B
B-8: SPECIAL SESSION ON SINGLE ELECTRON DEVICES (I) (9:00-10:25)
9:00 (1) TOWARD NEXT GENERATION ELECTRONICS BASED ON SINGLE ELECTRON
DEVICES (INVITED) H. HASEGAWA, HOKKAIDO UNIV., JAPAN 302
9:35 (2) DIGITAL SINGLE-ELECTRONICS: PROBLEMS AND POSSIBLE SOLUTIONS
(INVITED) A.N. KOROTKOV, MOSCOW STATE UNIV., RUSSIA 304 10:00 (3)
QUANTUM HOPFIELD NETWORK USING SINGLE-ELECTRON CIRCUITS (INVITED)
M. AKAZAWA, HOKKAIDO UNIV., JAPAN 306
B-9: SPECIAL SESSION ON SINGLE ELECTRON DEVICES (II) (10:45-12:00)
(0) CURRENT COPIERS: PHYSICS AND POSSIBLE APPLICATIONS (INVITED)
Y.V. NAZAROV, DELFT UNIV. TECHNOL., THE NETHERLANDS WITHDRAWN
10:45 (1) SINGLE-ELECTRON SIMULATORS FOR HIGH AND LOW LEVEL ANALYSES
(INVITED) M. FUJISHIMA, S. AMAKAWA AND K. HOH, UNIV. TOKYO, JAPAN 308
11:10 (2) TURNSTILE BASED SINGLE-ELECTRON LOGIC DEVICES (INVITED) K.
NAKAZATO AND K. TSUKAGOSHI, HITACHI EUROPE, U.K 310
11:35 (3) SELF-ASSEMBLING QUANTUM CIRCUITS WITH CLUSTERS, MOLECULES AND
QUANTUM DOTS
(INVITED)
S. BANDYOPADHYAY, V.P. ROYCHOWDHURY* AND D.B. JANES**, UNIV. NEBRASKA,
*UNIV.
CALIFORNIA AND **PURDUE UNIV., U.S.A
312
B-10: SYMPOSIUM ON FABRICATION, CHARACTERIZATION AND DEVICE APPLICATIONS
OF QUANTUM
NANOSTRUCTURES (I) (13:30-15:55)
13:30 (1) REAL TIME MONITORING OF INAS QUANTUM DOT FORMATION (INVITED)
E. STEIMETZ, W. RICHTER, F. SCHIENLE, T. TREPK AND J.-T. ZETTLER, TECH.
UNIV. BERLIN,
GERMANY
314
13:55 (2) SEMICONDUCTOR NANOSTRUCTURES SELF-ORGANIZED BY THE TURING
INSTABILITY
J. TEMMYO AND T. TAMAMURA, NTT, JAPAN
316
14:10 (3) GAAS/ALGAAS QUANTUM STRUCTURES GROWN IN TETRAHEDRAL-SHAPED
RECESSES ON GAAS
(LLL)B SUBSTRATES BY MOVPE T. TSUJIKAWA, K. MOMMA*, H. YAGUCHI, K.
ONABE, Y. SHIRAKI AND R. ITO, UNIV. TOKYO
AND *UNIV. ELECTRO-COMMUNICATIONS, JAPAN
318
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14:25 (4) EFFECTS OF AS2 FLUX AND ATOMIC HYDROGEN IRRADIATION FOR GROWTH
OF INGAAS QUANTUM WIRES BY MOLECULAR BEAM EPITAXY T. SUGAYA, Y. TANUMA*,
T. NAKAGAWA, T. SEKIGUCHI**, K. YONEI* AND Y. SUGIYAMA, ETL, *SHIBAURA
INST. TECHNOL. AND **TOHOKU UNIV., JAPAN 320
14:40 (5) IN-SITU UHV-STM STUDY OFFORMATION PROCESS OF ULTRATHIN MBE SI
LAYER ON GAAS(OOL)(2X4) SURFACE
N. TSURUMI, Y. ISHIKAWA, T. FUKUI AND H. HASEGAWA, HOKKAIDO UNIV., JAPAN
322 14:55 (6) MULTI-TUNNELLING JUNCTIONS OF METAL DROPLETS FORMED ON
CAF2 STEPEDGES BY SELF-ASSEM BLING MANNER K. KAWASAKI, J. TAKESHITA AND
K. TSUTSUI, TOKYO INST. TECHNOL., JAPAN 324
15:10 (7) DELTA-DOPING OF SI ON GAAS VICINAL SURFACES AND ITS
POSSIBILITY OF WIRELIKE INCORPORATION IN METALORGANIC VAPOR PHASE
EPITAXIAL GROWTH T. IRISAWA, J. MOTOHISA, M. AKABORI AND T. FUKUI,
HOKKAIDO UNIV., JAPAN 326
15:25 (8) W/CR/AU/SI02 COMPOSITE ALIGNMENT MARK FOR FABRICATION OF
INTERFERENCE/DIFFRACTION HOT ELECTRON DEVICES H. HONGO, Y. MIYAMOTO, J.
SUZUKI, T. HATTORI, A. KOKUBO, M. SUHARA AND K. FURUYA, TOKYO INST.
TECHNOL., JAPAN 328
15:40 (9) CROSS-SECTIONAL POTENTIAL IMAGING OF COMPOUND SEMICONDUCTOR
HETEROSTRUCTURE BY KEL VIN PROBE FORCE MICROSCOPY T. USUNAMI, M.
ARAKAWA, S. KISHIMOTO, T. MIZUTANI, T. KAGAWA* AND H. IWAMURA*, NAGOYA
UNIV. AND *NTT, JAPAN 330
B-LL: SYMPOSIUM ON FABRICATION, CHARACTERIZATION AND DEVICE APPLICATIONS
OF QUANTUM NANOSTRUCTURES (II) (16:10-18:50)
16:10 (1) PHOTOLUMINESCENCE STUDY OF INAS QUANTUM DOTS AND QUANTUM
DASHES GROWN ON GAAS (211)B S. GUO, H. OHNO, A. SHEN, Y. OHNO AND F.
MATSUKURA, TOHOKU UNIV., JAPAN 332
16:25 (2) CONTROLLED FORMATION OF NARROW AND UNIFORM INGAAS RIDGE
QUANTUM WIRE ARRAYS ON PATTERNED INP SUBSTRATES BY SELECTIVE MOLECULAR
BEAM EPITAXY H. FUJIKURA, Y. HANADA, M. KIHARA AND H. HASEGAWA, HOKKAIDO
UNIV., JAPAN 334 16:40 (3) VERTICAL QUANTUM CONFINEMENT EFFECT ON
OPTICAL PROPERTIES OF STRAIN-INDUCED INGAP
QUANTUM DOT STRUCTURE S.J. KIM, H. ASAHI, M. TAKEMOTO, K. ASAMI AND S.
GONDA, OSAKA UNIV., JAPAN 336 16:55 (4) SIZE QUANTIZATION IN INAS/GAAS
SELF-ASSEMBLED QUANTUM DOTS BY GAS-SOURCE MOLECULAR BEAM EPITAXY
H.-W. REN, K. NISHI*, S. SUGOU AND Y. MASUMOTO, ERATO, JST AND *NEC,
JAPAN... 338 17:10 (5) ALGAAS/GAAS LASER DIODES WITH GAAS ISLANDS ACTIVE
REGIONS ON SI SUBSTRATES GROWN BY DROPLET EPITAXY T. EGAWA, A. OGAWA, T.
JIMBO AND M. UMENO, NAGOYA INST. TECHNOL., JAPAN 340 17:25 (6)
POLARIZATION CHARACTERISTICS OF CRESCENT-SHAPED TENSILE-STRAINED
GAASP/ALGAAS QUAN
TUM WIRE LASERS M. ISHIKAWA, W. PAN, Y. KANEKO*, H. YAGUCHI, K. ONABE,
R. ITO AND Y. SHIRAKI, UNIV. TOKYO AND *HEWLETT-PACKARD LABS., JAPAN 342
17:40 (7) SELF-ASSEMBLED INAS QUANTUM DOTS BURIED IN ALGAAS BARRIER AND
THEIR APPLICATION TO SPLIT-GATE HEMT OPERATING AT 77K S. SHIINA AND K.
YOH, HOKKAIDO UNIV., JAPAN 344
17:55 (8) AFM STUDY OF PHTHALOCYANINE-BASED THIN FILM GAS SENSOR T.
NAGASAWA, K. MURAKAMI AND K. WATANABE, SHIZUOKA UNIV., JAPAN 346 18:10
(9)(LN) PERFECT SPATIAL ORDERING OF SELF-ORGANIZED INGAAS/ALGAAS
BOX-LIKE STRUCTURE ON GAAS (311)B SUBSTRATE WITH BURIED SILICON-NITRIDE
DOT ARRAY
E. KURAMOCHI, J. TEMMYO, H. KAMADA AND T. TAMAMURA, NTT, JAPAN 562 18:20
(10)(LN) CHARACTERISTICS OF NANOSCALE LITHOGRAPHY USING ATOMIC FORCE
MICROSCOPE WITH CURRENTCONTROLLED EXPOSURE SYSTEM
M. ISHIBASHI, S. HEIKE, H. KAJIYAMA, Y. WADA AND T. HASHIZUME, HITACHI,
JAPAN 564 18:30 (11)(LN) ELECTRON CHARGING TO SILICON QUANTUM DOTS AS A
FLOATING GATE IN MOS CAPACITORS A. KOHNO, H. MURAKAMI, M. IKEDA, S.
MIYAZAKI AND M. HIROSE, HIROSHIMA UNIV.,
JAPAN 566
XXVI
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18:40 (12)(LN) TUNEABLE, STRONGLY NON-PARABOLIC CONFINEMENT IN A QUASI
ONE DIMENSIONAL ELECTRON GAS FORMED BY EPITAXIAL REGROWTH S. CINA, D.D.
ARNONE*, J.H. BURROUGHES*, C.E. NORMAN*, T. BURKE, H.P. HUGHES, M.
PEPPER* AND D.A. RITCHIE, UNIV. CAMBRIDGE AND *TOSHIBA CAMBRIDGE RES.
CTR., U.K.... 568 18:50-19:20 AUTHOR S CORNER
ROOM C
C-7: THIN-FILM TRANSISTORS (I) (9:00-10:20)
9:00 (1) LOW-TEMPERATURE POLY-SI TFT-LCDS WITH DIGITAL INTERFACE J.
KOYAMA, Y. OGATA, Y. TANAKA, S. NAKAJIMA, S. YAMAZAKI, Y. KUBOTA*, Y.
YAMANE*, Y. TAKAFUJI*, F. FUNADA* AND S. NAKA*, SEMICONDUCTOR ENERGY
LAB. AND *SHARP, JAPAN 348
9:20 (2) A CHARACTERISTICS OF BURIED CHANNEL POLY-SI TFTS C.-M. PARK,
J.-S. YOO, B.-H. MIN, J.-H. JEON AND M.-K. HAN, SEOUL NAT L UNIV., KOREA
350
9:40 (3) A NOVEL BOTTOM-GATE POLY-SI THIN FILM TRANSISTORS WITH HIGH
ON/OFF CURRENT RATIO K.-Y. CHOI, K.-C. PARK, H.-B. CHOI AND M.-K. HAN,
SEOUL NAT L UNIV., KOREA 352 10:00 (4) NEW POLY-SITHIN FILM TRANSISTORS
WITH A-SI CHANNEL REGION DESIGNED TO REDUCE THE LEAK
AGE CURRENT J.-H. JEON, C.-M. PARK, J.-S. YOO, C.-H. KIM AND M.-K. HAN,
SEOUL NAT L UNIV., KOREA 354
C-8: THIN-FILM TRANSISTORS (II) (10:40-12:00)
10:40 (1) DIFFERENTIATION OF EFFECTS DUE TO GRAIN AND GRAIN BOUNDARY
TRAPS IN LASER ANNEALED POLY-SI THIN FILM TRANSISTORS S. UPPAL, G.A.
ARMSTRONG, S.D. BROTHERTON* AND J.R. AYRES*, QUEENS UNIV. BELFAST AND
*PHILIPS RES. LABS., U.K 356
11:00 (2) FABRICATION OF GATE OVERLAPPED-LDD POLY-SI TFT FOR LARGE AREA
AMLCD K.-Y. CHOI, K.-C. PARK, C.-H. KIM, J.-S. YOO AND M.-K. HAN, SEOUL
NAT L UNIV., KOREA 358
11:20 (3) LOCATION CONTROL OF LARGE GRAIN FOLLOWING EXCIMER-LASER
MELTING OF SI THIN-FILMS R. ISHIHARA, DELFT UNIV. TECHNOL., THE
NETHERLANDS 360
11:40 (4) DRY THERMAL OXIDATION OF POLYCRYSTALLINE AND AMORPHOUS SILICON
FILMS FOR APPLICATION TO THIN FILM TRANSISTORS
M. MIYASAKA, H. OHSHIMA AND T. SHIMODA, SEIKO EPSON, JAPAN 362
12:00-12:20 AUTHOR S CORNER
C-9: MOSFETS (I) (13:30-15:30)
13:30 (1) IMPROVEMENTOF RELIABILITYOF MOSFET S WITH N20 NITRIDED GATE
OXIDE AND N20 POLYSILICON GATE REOXIDATION C.S. LAI, T.S. CHAO, T.F.
LEI*, C.L. LEE*, T.W. HUANG AND C.Y. CHANG*, NAT L NANO DEVICE LAB. AND
*NAT L. CHIAO TUNG UNIV., TAIWAN 364
13:50 (2) NEW INSIGHT INTO THE DEGRADATION MECHANISM OF NITRIDE SPACER
WITH DIFFERENT POST-OXIDE IN SUBMICRON LDD MOSFET S
CM. YIH, C.L. WANG, S.S. CHUNG, C.C. WU*. W. TAN*, H.J. WU*, S. PI* AND
D. HUANG*, NAT L CHIAO TUNG UNIV. AND *MOSEL-VITELIC, TAIWAN 366
14:10 (3) TEMPERATURE EFFECT ON OFF-STATE DRAIN LEAKAGE CURRENT IN A
HOT-CARRIER STRESSED
N-MOSFET T.E. CHANG, L.P. CHIANG, C.W. LIU, N.K. ZOUS AND T. WANG, NAT L
CHIAO TUNG UNIV., TAIWAN 368 14:30 (4) STUDY OF DRAIN CONTACT STRUCTURE
DEPENDENT DEEP SUBMICRON MOSFET RELIABILITY BY
PHOTON EMISSION ANALYSIS S.-G. LEE, D. LEE*, K.-N. LEE*, Y.-J. LEE*, Y.
EO, J.-Y. JEONG**, O.-K. KWON AND C.-H. LEE, UNIV. HANYANG, *LG SEMICON
AND **UNIV. SUWON, KOREA 370
XXVN
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14:50 (5) SHORT-CHANNEL EFFECTS IN N- AND P-CHANNEL POLYSILICON THIN
FILM TRANSISTORS WITH VERY THIN ECR N20-PLASMA GATE DIELECTRICS J.-W.
LEE, N.-I. LEE AND C.-H. HAN, KAIST, KOREA 372
15:10 (6) METAL NODE CONTACT TFT SRAM CELL FOR HIGH SPEED, LOW VOLTAGE
APPLICATIONS K.S. SON, S.W. KWON*, Y.J. LEE* AND D.M. KIM, POHANG UNIV.
SCI. & TECHNOL. AND HYUNDAI ELEC. IND., KOREA 374
C-10: NOVEL SI-DEVICES (15:50-18:10)
15:50 (1) HIGHLY SENSITIVE MOSFET GAS SENSORS WITH POROUS PLATINUM GATE
ELECTRODE H. FUKUDA, H. SEO, K. KASAMA, T. ENDO AND S. NOMURA, MURORAN
INST. TECHNOL., JAPAN 376
16:10 (2) EVALUATION OF 0.3 JAM POLY-SILICON CMOS CIRCUITS FOR
INTELLIGENT POWER IC APPLICATION T. MATSUDAI, M. TERAUCHI, M. YOSHIMI,
N. YASUHARA, Y. USHIKU AND A. NAKAGAWA, TOSHIBA, JAPAN 378
16:30 (3) A 600 MW-OUTPUT POWER AMPLIFIER FOR CELLULAR APPLICATIONS
USING APCVD-GROWN SIGE BASE HBT T.-H. HAN, B.R. RYUM, D.-H. CHO AND
S.-M. LEE, ETRI, KOREA 380
16:50 (4) FABRICATION OF METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR
FIELD EFFECT TRANSISTOR (MEFISFET) USING PT-SRBI2TA209-Y203-SI STRUCTURE
H.N. LEE, Y.T. KIM, C.W. LEE, M.-H. LIM* AND T.S. KALKUR*, KIST, KOREA
AND COLORADO STATE UNIV., U.S.A 382
17:10 (5) ELECTRICAL CHARACTERISTICS OF NEURON PULSE OSCILLATION
CIRCUITS USING COMPLEMENTARY UNIJUNCTION TRANSISTORS AND MOSFETS S.-M.
YOON, Y. KURITA, E. TOKUMITSU AND H. ISHIWARA, TOKYO INST. TECHNOL.,
JAPAN. . . 384
17:30 (6) AN ADAPTIVE SILICON RETINA PERFORMING AN EDGE EXTRACTION WITH
A MOS-TYPE SPATIAL WIRING AND SMART PIXEL CIRCUITS H. IKEDA, K. TSUJI,
T. ASAI, H. YONEZU AND J.-K. SHIN, TOYOHASHI UNIV. TECHNOL., JAPAN 386
17:50 (7) EXPERIMENTAL PATTERN RECOGNITION SYSTEM USING BIDIRECTIONAL
OPTICAL BUS LINES T. DOI, A. UEHARA, Y. TAKAHASHI, S. YOKOYAMA, A. IWATA
AND M. HIROSC, HIROSHIMA UNIV., JAPAN 388
18:10-18:40 AUTHOR S CORNER
ROOM D
D-7: DEFECTS/DIFFUSION (I) (9:00-10:25)
9:00 (1) GATE OXIDE DEFECTS IN MOSLSIS AND OCTAHEDRAL VOID DEFECTS IN
CZOCHRALSKI SILICON (INVITED) M. ITSUMI, NTT, JAPAN 390
9:25 (2) MEDIUM FIELD BREAKDOWN FOLLOWING LOCAL TUNNELING CURRENT ON MOS
CAPACITOR CON TAINING GROWN-IN CZ CRYSTAL DEFECTS M. TAMATSUKA, Z.
RADZIMSKI*, G.A. ROZGONYI, S. OKA**, M. KATO** AND Y. KITAGAWARA**,
NORTH CAROLINA STATE UNIV.,* SHIN-ETSU HANDOTAI, AMERICA, U.S.A. AND
**SHIN-ETSU HANDOTAI, JAPAN 392
9:45 (3) INFLUENCE OF WAFER MATERIAL ON DEFECT GENERATION DURING DEEP
SUBMICRON LOCOS PROCESS N. KAWAKAMI, Y. AOKI*, T. KUGIMIYA, K.
SHIBAHARA* AND S. YOKOYAMA*, KOBE STEEL AND *HIROSHIMA UNIV., JAPAN 394
10:05 (4) THE ANALYSIS OF DEFECTIVE CELL INDUCED BY COP IN 0.3 MICRONS
TECHNOLOGY NODE DRAM M. MURANAKA, M. MIURA, H. IWAI*, M. KAWAMURA*. Y.
TADAKI* AND T. KAERIYAMA**, HITACHI ULSI ENG., *HITACHI AND **TEXAS
INSTRUMENTS, JAPAN 396
D-8: DEFECTS/DIFFUSION (II) (10:40-12:00)
10:40 (1) BORON DIFFUSION IN NITRIDED OXIDE GATE DIELECTRICS LEADING TO
HIGH SUPPRESSION OF BORON PENETRATION IN P-MOSFETS T. AOYAMA, S. OHKUBO,
H. TASHIRO, Y. TADA, K. SUZUKI AND K. HORIUCHI, FUJITSU LABS., JAPAN 398
XXVLLL
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11:00 (2) IMPROVED DIFFUSION BARRIER CAPABILITY OF THIN WSIN FILM BY RF
BIAS APPLICATION DURING ECR PLASMA NITRIDATION A. HIRATA, K. MACHIDA, S.
MAEYAMA, Y. WATANABE AND H. KYURAGI, NTT, JAPAN 400 11:20 (3)
CHARACTERIZATION OF PHOSPHORUS PILE-UP AT THE SI02/SI INTERFACE Y.
YOSHIMURA, K. ONO, H. FUJIOKA, Y. SATO*, S. MAEYAMA*, Y. BABA**, K.
YOSHII**,
T.A. SASAKI** AND M. OSHIMA, UNIV. TOKYO, *NTT AND **JAPAN ATOMIC ENERGY
RES. INST., JAPAN 402
11:40 (4) STRESS ELIMINATION OF LPCVD SILICON NITRIDE FILMS BY LOW-DOSE
ION IMPLANTATION I. YAMAMOTO AND S. NISHIMOTO, NEC, JAPAN 404
12:00-12:20 AUTHOR S CORNER
D-9: COMPOUND SEMICONDUCTOR DEVICES (I) (13:30-15:40)
13:30 (1) A NEW ROUTE TO REDUCE REMOTE IMPURITY SCATTERING IN MODULATION
DOPED QUANTUM WELLS WITH VERY HIGH CONDUCTIVITY (INVITED) K.-J.
FRIEDLAND, R. HEY, H. KOSTIAL AND K.H. PLOOG, PAUL-DRUDE INST., GERMANY
406
13:55 (2) HIGH-SPEED AND LOW-POWER D-FF EMPLOYING MOBILES
(MONOSTABLE-BISTABLE TRANSITION LOGIC ELEMENTS) K. MAEZAWA, H.
MATSUZAKI, T. AKEYOSHI, J. OSAKA, T. OTSUJI AND M. YAMAMOTO, .
NTT, JAPAN 408
14:10 (3) INPUT POWER DEPENDENCE OF LARGE-SIGNAL MICROWAVE
CHARACTERISTICS OF RESONANT-TUNNEL ING HIGH ELECTRON MOBILITY
TRANSISTORS
H. FUKUYAMA, K. MAEZAWA, M. YAMAMOTO, H. OKAZAKI AND M. MURAGUCHI, NTT,
JAPAN 410
14:25 (4) CRUCIAL ROLE OF EXTREMELY THIN ALSB BARRIER LAYERS IN
INAS/ALSB/GASB/ALSB/INAS RESONANT INTERBAND TUNNELING DIODES H.
KITABAYASHI, T. WAHO AND M. YAMAMOTO, NTT, JAPAN 412
14:40 (5) ELECTROLUMINESCENCE MEASUREMENT OF N SELF-ALIGNED GAAS MESFETS
H. NIWA, Y. OHNO, S. KISHIMOTO, T. MIZUTANI, H. YAMAZAKI* AND T.
TANIGUCHI*, NAGOYA UNIV. AND *JAPAN RADIO, JAPAN 414
14:55 (6) HIGH PERFORMANCE OF W-B-N SCHOTTKY CONTACT TO GAAS Y.T. KIM,
C.W. LEE* AND D.J. KIM, KIST AND *KOOKMIN UNIV., KOREA 416 15:10 (7)
ELECTRICAL AND MICROSTRUCTURAL ANALYSES ON PD/GE-BASED OHMIC CONTACT TO
N-INGAAS I.-H. KIM, S.H. PARK, J. KIM*, J.-M. LEE, T.-W. LEE AND M.P.
PARK, ETRI AND
*HOSEO UNIV., KOREA 418
15:25 (8) PERFORMANCE AND STABILITY OF MOVPE-GROWN CARBON-DOPED
INP/INGAAS HBT S DE-HYDROGENATED BY AN ANNEAL AFTER EMITTER MESA
FORMATION K. KURISHIMA, S. YAMAHATA, H. NAKAJIMA AND H. ITO, NTT, JAPAN
420
D-10: COMPOUND SEMICONDUCTOR DEVICES (II) (16:00-18:20)
16:00 (1) ULTRAHIGH-SPEED INTEGRATED CIRCUITS USING INP-BASED
HIGH-ELECTRON-MOBILITY TRANSISTORS(HEMTS) (INVITED) T. ENOKI, H.
YOKOYAMA, Y. UMEDA AND T. OTSUJI, NTT, JAPAN 422
16:25 (2) DEVELOPMENT OF THE HIGH ASPECT-RATIO Y-SHAPED GATE PROCESS FOR
HEMT R. SHIGEMASA, Y. NITTA, T. OHSHIMA, M. TSUNOTANI AND T. KIMURA,
OKI, JAPAN 424 16:40 (3) NOVEL GATE-RECESS PROCESS FOR THE REDUCTION OF
PARASITIC PHENOMENA DUE TO SIDE-ETCHING IN INALAS/INGAAS HEMTS
T. SUEMITSU, T. ENOKI, H. YOKOYAMA AND Y. ISHII, NTT, JAPAN 426
16:55 (4) HIGH-PERFORMANCE RECESSED GATE HFETS WITH NEW DOPED CHANNEL
STRUCTURE M. INAI, H. SASAKI, H. SETO, F. OKUI, S. FUKUDAAND H.
ARIYOSHI, MURATAMFG., JAPAN.. .428 17:10 (5) HIGH-PERFORMANCE HEMT WITH
AN OFFSET-GATE STRUCTURE FOR MILLIMETER-WAVE MMICS H. OHTA, T.
TANIMOTO*, I. OHBU*, K. HIGUCHI*, S. TAKATANI*, N. KURITA*, K.
KAMOZAKI* AND H. KONDOH*, HITACHI ULSI ENG. AND *HITACHI, JAPAN 430
17:25 (6) EXTREMELY LOW NOISE 0.15 /;M T-GATE ALGAAS/INGAAS
PSEUDOMORPHIC HEMTS H.-S. YOON, J.-H. LEE, B.-S. PARK, H.-T. CHOI, C.-S.
PARK AND K.-E. PYUN, ETRI,
KOREA 432
XXIX
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17:40 (7) GROWTH AND CHARACTERIZATION OF ALGAAS/INGAAS/GAAS P-HEMTS
GROWN BY LP MOCVD USING INVERTED DOUBLE CHANNEL STRUCTURE K.H. AHN, Y.J.
JEON, Y.H. JEONG, C.E. YUN* AND H.M. PYO*. POHANG UNIV. SCI. & TECHNOL.
AND *KOREA TELECOMM., KOREA 434
17:55 (8) ELECTRICAL PROPERTIES OF METAL-INSULATOR-SEMICONDUCTOR (MIS)
INTERFACE AND MISFETS EMPLOYING HYDROGENATED DIAMOND FILM SURFACE Y.
YUN, T. MAKI, H. TANAKA AND T. KOBAYASHI, OSAKA UNIV., JAPAN 436
18:10 (9)(LN) HIGH-SPEED STATIC FREQUENCY DIVIDER EMPLOYING RESONANT
TUNNELING DIODES AND HEMTS H. MATSUZAKI, K. ARAI, K. MAEZAWA, J. OSAKA,
M. YAMAMOTO AND T. OTSUJI, NTT, JAPAN 570
18:20-18:50 AUTHOR S CORNER
ROOM A
A-12: SURFACE REACTION AND CHEMISTRY (I) (9:00-10:25)
9:00 (1) OXYGEN-HYDROGEN INTERACTIONS IN SILICON (INVILED) R.C. NEWMAN,
IMPERIAL COLLEGE SCIENCE., U.K 438
9:25 (2) FRACTION OF INTERSTITIALCY COMPONENT OF PHOSPHORUS AND ANTIMONY
DIFFUSION IN SILICON T. TAKAGI, T. SHIMIZU, S. MATSUMOTO, Y. SATO*, E.
ARAI** AND T. ABE***, KCIO UNIV., *NTT, **NAGOYA INST. TECHNOL. AND
***SHIN-ETSU HANDOTAI, JAPAN 440
9:45 (3) ATOMIC CONFIGURATION OF SEGREGATED B ON SI(001) SURFACE T.
KOMEDA AND Y. NISHIOKA, TEXAS INSTRUMENTS, TSUKUBA R&D CTR., JAPAN 442
10:05 (4) SIH4/H202 OXIDE PLANARIZATION CONTROLLED BY SURFACE REACTION
OF SI-H BOND T. YOSHIE AND M. YOSHIMARU, OKI, JAPAN 444
A-13: SURFACE REACTION AND CHEMISTRY (II) (10:40-12:20)
10:40 (1) EFFECTS OF REACTION PRODUCT DURING HYDROGENATION OF SI
SURFACES IN HF SOLUTION Y. SUGITA AND S. WATANABE, FUJITSU LABS., JAPAN
446
11:00 (2) DEPENDENCE OF GAS CHEMISTRY ON SI SURFACE REACTIONS IN HIGH
C/F RATIO FLUOROCARBON PLASMA DURING CONTACT HOLE ETCHING H. KOMEDA, T.
UCDA*, S. WADA* AND T. OHMI, TOHOKU UNIV. AND *SHARP, JAPAN 448
11:20 (3) CHARACTERIZATION OF HYDROGEN IN EPITAXIAL SI FILMS GROWN AT
VERY LOW TEMPERATURE K. ABE, A. YAMADA AND M. KONAGAI, TOKYO INST.
TECHNOL., JAPAN 450
11:40 (4) EVALUATION OF DRY-ETCHING DAMAGE INTRODUCED INTO SI BY
SCHOTTKY JUNCTION CHARACTERIS TICS
K. HAMADA AND T. KITANO, NEC, JAPAN 452
12:00 (5) CRYSTALLINE SI/SIOA. MULTILAYER STRUCTURE GROWN BY MOLECULAR
BEAM EPITAXY C. SHENG, F. LIN, D. GONG, J. WAN, Y. FAN AND X. WANG,
FUDAN UNIV., CHINA 454
A-14: WAFER CONTROL/EPITAXY (13:30-14:55)
13:30 (1) CURRENT STATUS OF 200 MM AND 300 MM SILICON WAFERS (INVITED)
H.R. HUFF, D.W. MCCORMACK, JR., C. AU, T. MESSINA, K. CHAN AND R.K.
GOODALL, SEMATECH, U.S.A 456-457, 575
13:55 (2) IRON GETTERING CONTROLLED BY SIZE AND DENSITY OF OXYGEN
PRECIPITATES IN CZ SILICON H. TAKAHASHI, H. YAMADA-KANETA AND M.
SUEZAWA*, FUJITSU AND *TOHOKU UNIV., JAPAN 458
14:15 (3) NEW THREE-DIMENSIONAL WAFER BONDING TECHNOLOGY USING ADHESIVE
INJECTION METHOD T. MATSUMOTO, M. SATOH, K. SAKUMA, H. KURINO, N.
MIYAKAWA*, H. ITANI** AND M. KOYANAGI, TOHOKU UNIV., *FUJI XEROX AND
**MITSUBISHI HEAVY IND., JAPAN 460
14:35 (4) ENHANCEMENT OF SILICON EPITAXY BY INCREASED PHOSPHORUS
CONCENTRATION IN A LOW ENERGY* ION BOMBARDMENT PROCESS H. KUMAMI, W.
SHINDO, K. INO AND T. OHMI, UNIV. TOHOKU, JAPAN 462
14:55-15:25 AUTHOR S CORNER
XXX
IMAGE 18
9:00 (1)
9:15 (2)
9:30 (3)
9:45 (4)
10:00 (5)
10:15 (6)
ROOM B
B-T2: SYMPOSIUM ON FABRICATION AND DEVICE APPLICATIONS OF QUANTUM
NANOSTRUCTURES (III) (9:00-10:30)
INFRARED INDUCED EMISSION FROM SILICON QUANTUM WIRES N.T. BAGRAEV, E.I.
CHAIKINA, W. GEHLHOFF*, L.E. KLYACHKIN, LI. MARKOV AND A.M. MALYARENKO,
A.F. IOFFE PHYSICO, RUSSIA AND *TECHNISCHE UNIV. BERLIN, GERMANY... 464
EFFECT OF MICROWAVE IRRADIATIONS ON COUPLED QUANTUM DOTS
K. ISHIBASHI, T.H. OOSTERKAMP, R.V. HIJMAN AND L.P. KOUWENHOVEN, DELFT
UNIV. TECHNOL., THE NETHERLANDS 466
FABRICATION AND CHARACTERIZATION OF A RING-TUNNEL JUNCTION QUANTUM
ELECTRON INTER FEROMETER
I.N. ZHILYAEV AND S.G. BORONIN, RUSSIAN ACADEMY SCIENCES, RUSSIA 468
SI PILLAR FORMATION AND HEIGHT CONTROL BY FURNACE OXIDATION OF THE SI
(111) SURFACEWITH ULTRA-SMALL SIN NUCLEI T. YAMAMOTO, T. NAGASAWA, K.
MURAKAMI AND M. TABE, SHIZUOKA UNIV., JAPAN 470 SCANNING TUNNELING
MICROSCOPY STUDY OF SUBMICRON-SIZED PN JUNCTION ON SI(001) SUR FACES
H. FUKUTOME, K. TAKANO, S. HASEGAWA, H. NAKASHIMA, T. AOYAMA* AND H.
ARIMOTO*, OSAKA UNIV. AND *FUJITSU LABS., JAPAN 472
ANODIC OXIDATION OF SILICON AND TITANIUM BASED ON NEAR FIELD MICROSCOPY
E. DUBOIS AND P.A. FONTAINE, IEMN, FRANCE 474
B-13: SYMPOSIUM ON FABRICATION AND DEVICE APPLICATIONS OF QUANTUM
NANOSTRUCTURES (IV) (10:50-12:20)
10:50 (1) SELECTIVE ELECTRODEPOSITION OF MAGNETIC AND METALLIC
NANOSTRUCTURES ONTO SEMICONDUCTOR TEMPLATES G. FASOL, EUROTECHNOL.
JAPAN, JAPAN 476
11:05 (2) FABRICATION OF NANOMETER-SCALE VERTICAL MIM TUNNEL JUNCTIONS
USING A DOUBLE-LAYERED INORGANIC RESIST
S. HARAICHI, T. WADA, S.M. GORWADKAR AND K. ISHII, ETL, JAPAN 478
11:20 (3) FORMATION OF QUANTUM DOTS BY SCHOTTKY WRAP GATE CONTROL OF
2DEG AND ITS APPLICA TION TO SINGLE ELECTRON TRANSISTORS S. KASAI, Y.
SATOH, H. OKADA, T. HASHIZUME AND H. HASEGAWA, HOKKAIDO UNIV.,
JAPAN 480
11:35 (4) SUPPRESSION OF UNINTENTIONAL FORMATION OF PARASITIC SI ISLANDS
ON A SI SINGLE-ELECTRON TRANSISTOR BY THE USE OF SIN MASKED OXIDATION A.
FUJIWARA, Y. TAKAHASHI, H. NAMATSU, K. KURIHARA AND K. MURASE, NTT,
JAPAN ... 482
11:50 (5) FABRICATION PROCESS OF SI MEMORY DOT AND QUANTUM CHANNEL BASED
ON AS DOPANT STATISTICAL DISTRIBUTION EFFECT
X. TANG, X. BAIE AND J.P. COLINGE, UNIV. CATHOLIQUE LOUVAIN, BELGIUM 484
12:05 (6) SIMULATING AND VISUALIZING THE DYNAMICS OF COHERENT QUANTUM
TRANSPORT IN STRONG MAG NETIC FIELDS
G. FASOL, EUROTECHNOL. JAPAN, JAPAN 486
B-14: SYMPOSIUM ON FABRICATION AND DEVICE APPLICATIONS OF QUANTUM
NANOSTRUCTURES (V) (13:30-15:00)
13:30 (1) PHOTO-IRRADIATION EFFECTS IN SINGLE-ELECTRON TUNNEL JUNCTION
ARRAYS Y. TERAO, M. TABE, N. ASAHI* AND Y. AMEMIYA*, SHIZUOKA UNIV. AND
*HOKKAIDO UNIV., JAPAN 488
13:45 (2) ROOM TEMPERATURE NB-BASED SINGLE-ELECTRON TRANSISTORS J.
SHIRAKASHI, K. MATSUMOTO, N. MIURA* AND M. KONAGAI*, ETL AND *TOKYO
INST. TECH
NOL., JAPAN 490
14:00 (3) SINGLE ELECTRON THREE-VALUED MEMORY ARRAY WITH READING
CIRCUITS K. YAMAMURA AND Y. SUDA, TOKYO A&T UNIV., JAPAN 492
XXXI
IMAGE 19
14:15 (4) SINGLE ELECTRON TRANSISTOR ON ATOMICALLY FLAT -AL203
SUBSTRATE MADEBY AFM NANO-OXIDATION PROCESS
K. MATSUMOTO, Y. GOTOH, J. SHIRAKASHI, T. MAEDA AND J.S. HARRIS*, ETL,
JAPAN AND
*STANFORD UNIV., U.S.A 494
14:30 (5) QUANTUM-BOLTZMANN-MACHINE NEURON DEVICE N.-J. WU, N. SHIBATA*
AND Y. AMEMIYA, HOKKAIDO UNIV. AND *DAI NIPPON PRINTING, JAPAN
496
14:45 (6) DITHIOL-LINKED GOLD COLLOIDAL PARTICLES USED FOR FABRICATING
SINGLE ELECTRON TRANSISTORS
T. SATO, H. AHMED*, D. BROWN*, AND B.F.G. JOHNSON*, HITACHI EUROPE AND
*UNIV.
CAMBRIDGE, U.K 498
15:00-15:30 AUTHOR S CORNER
ROOM C
C-LL: MOSFETS (II) (9:00-10:30)
9:00 (1) DEEP-SUBMICRON SINGLE-GATE CMOS TECHNOLOGY USING CHANNEL
PREAMORPHIZATION M. MIYAKE, T. KOBAYASHI, Y. SAKAKIBARA, K. DEGUCHI AND
M. TAKAHASHI, NTT, JAPAN... 500 9:20 (2) IMPACT OF SHALLOW SOURCE/DRAIN
ON SCALING PMOSFETS BELOW 0.1 FTM H. KURATA AND T. SUGII, FUJITSU LABS.,
JAPAN 502
9:40 (3) A NEW POST-METAL THRESHOLD VOLTAGE ADJUSTMENT SCHEME BY
HYDROGEN ION IMPLANTATION S. ITO, K. NOGUCHI AND T. HORIUCHI, NEC, JAPAN
504
10:00 (4) HIGH PERFORMANCE 0.2 //M DUAL GATE CMOS BY SUPPRESSION OF
TRANSIENT-ENHANCED-DIFFUSION USING RAPID THERMAL ANNEALING TECHNOLOGIES
Y. NISHIDA, H. SAYAMA, S. SHIMIZU, T. KUROI, A. FURUKAWA, A. TERAMOTO,
T. UCHIDA, Y. INOUE AND T. NISHIMURA, MITSUBISHI, JAPAN 506
10:20 (5)(LN) FABRICATION AND CHARACTERIZATION OF 14-NM-GATE-LENGTH
EJ-MOSFETS H. KAWAURA, T. SAKAMOTO, Y. OCHIAI, J. FUJITA AND T. BABA,
NEC, JAPAN 572
C-12: MOSFETS (III) (10:40-12:20)
10:40 (1) SIMULATION OF 2-DIMENSIONAL HOLE GAS FOR PMOS DEVICES WITH
PHOSPHORUS PILE-UP H. FUJIOKA, K. ONO, Y. SATO*, C. HU**, AND M. OSHIMA,
UNIV. TOKYO, *NTT, JAPAN AND **UNIV. CALIFORNIA, U.S.A 508
11:00 (2) STUDY OF INDIUM DOPING EFFECT ON HIGH PERFORMANCE SUB-QUARTER
MICRON NMOS: VT CONTROL AND POCKET IMPLANTATION M. TAKASE, K. YAMASHITA
AND B. MIZUNO, MATSUSHITA, JAPAN 510
11:20 (3) UNIFORM SI-SEG AND TI/SEG-SI THICKNESS RATIO CONTROL FOR
TI-SALICIDED SUB-QUARTER MICRON CMOS DEVICES H. WAKABAYASHI, T. ANDOH,
T. MOGAMI, T. TATSUMI AND T. KUNIO, NEC, JAPAN 512
11:40 (4) CELL TRANSISTOR DESIGN USING SELF-ALIGNED LOCAL CHANNEL
IMPLANT(SALCI) FOR 4GB DRAMS AND BEYOND D. HA, J.-H. SIM AND K. KIM,
SAMSUNG, KOREA 514
12:00 (5) GAIN-DETERMINED SHORT-CHANNEL LIMIT OF MOSFETS M. FUJISHIMA,
M. ISHII AND K. HOH, UNIV. TOKYO, JAPAN 516
C-13: ISOLATION (13:30-14:50)
13:30 (1) PHOTORESIST CMP FOR SHALLOW TRENCH ISOLATION A. ITOH, M. IMAI
AND Y. ARIMOTO, FUJITSU LABS., JAPAN 518
13:50 (2) OPTIMIZATION OF PROCESS CONDITIONS FOR QUARTER MICRON RECESSED
POLY-SI SPACER LOCOS (RPSL) ISOLATION
S.J. HONG, D.H. AHN, S.E. KIM, T. PARK, Y.G. SHIN, H.K. KANG AND M.Y.
LEE, SAM SUNG, KOREA 520
14:10 (3) EFFECTS OF BUFFER LAYER STRUCTURE IN POLY BUFFERED LOCOS FOR
DEEP SUBMICRON SILICON DEVICES
J.-H. LEE, T.M. ROH, J.-S. LYU, B.W. KIM AND H.J. YOO, ETRI, KOREA 522
XXXII
IMAGE 20
14:30 (4) SHALLOW TRENCH ISOLATION CHARACTERISTICS WITH
HIGH-DENSITY-PLASMA (HDP) CVD GAP-FILL OXIDE FOR DEEP-SUBMICRON CMOS
TECHNOLOGIESS. LEE, K. JUNG, J. SON, S. CHUNG, M. CHAE, J. KIM, W. YANG,
Y. LEE AND J. HWANG, LG SEMICON, KOREA 524 14:50-15:20 AUTHOR S CORNER
ROOM D D-LL: SI-BASED HETEROSTRUCTURES(I) (9:00-10:20)9:00 (1) ULTRAHIGH
ELECTRON MOBILITIES IN SI^GE^SI/SI^GE, HETEROSTRUCTURES WITH ABRUPT
INTER FACES FORMED BY SOLID-PHASE EPITAXYN. SUGII, K. NAKAGAWA, Y.
KIMURA AND M. MIYAO, HITACHI, JAPAN 526 9:20 (2) CI2 INFLUENCE ON SI!
-,VGEV BASE EPITAXIAL LAYER GROWTH FOR HIGH SPEED BIPOLAR TRANSISTOR T.
AOYAMA, T. TATSUMI AND S. SAITO, NEC, JAPAN 528 9:40 (3) QUANTITATIVE
CORRELATION BETWEEN THE SURFACE SEGREGATION OF GE AND THE LIGHT EMISSION
OFSI/SIGE/SI HETEROSTRUCTURESY. KIMURA, K. NAKAGAWA AND M. MIYAO,
HITACHI, JAPAN 530 10:00 (4) FORMATION OF ATOMIC-ALLY ABRUPT SI/GE
HETERO-INTERFACEK. IKEDA, S. SUGAHARA, Y. UCHIDA*, T. NAGAI* AND M.
MATSUMURA, TOKYO INST. TECH-*NOL. AND *TEIKYO UNIV. SCI. & TECHNOL.,
JAPAN 532D-12: SI-BASED HETEROSTRUCTURES(II) (10:40-12:20)10:40 (1)
EFFECTS OF SEGREGATED GE ON ELECTRICAL PROPERTIES OF SI02/SIGE
INTERFACEC.G. AHN, H.S. KANG, Y.K. KWON* AND B.K. KANG, POHANGUNIV. SCI.
& TECHNOL. AND*UIDUK UNIV., KOREA 53411:00 (2) SURFACE SEGREGATION
BEHAVIORS OF B, GA, AND SB DURING SI-MBE: CALCULATION USING A
FIRST-PRINCIPLE METHOD J. USHIO, K. NAKAGAWA, M. MIYAO AND T. MARUIZUMI,
HITACHI, JAPAN 53611:20 (3) LAYER-BY-LAYER OXIDATION OF SI(001)
SURFACESH. WATANABE, K. FUJITA, T. KAWAMURA* AND M. ICHIKAWA, JRCAT AND
*YAMANASHIUNIV., JAPAN 53811:40 (4) FORMATION AND CHARACTERIZATION
OFTHIN OXIDE LAYERS ON THE SPATIALLY CONTROLLED ATOM IC-STEP-FREE
SI(001) SURFACEA. ANDO, K. SAKAMOTO, K. MIKI, K. MATSUMOTO AND T.
SAKAMOTO, ETL, JAPAN 54012:00 (5) SURFACE AND INTERFACE STRUCTURES OF
ULTRA-THIN THERMAL OXIDES ON SI(100) M. FUJIMURA, T. YAGI, M. OHASHI AND
T. HATTORI, MUSASHI INST. TECHNOL., JAPAN 542D-13: SILICON THIN-FILMS
AND DEVICES (13:30-14:50)13:30 (1) A UNIFIED MODEL FOR CHARGE DEFECT
GENERATION IN A-SIH: PHOTO-INDUCED DEFECTS IN PHOTOVOLTAIC (PV) DEVICES
AND CURRENT INDUCED DEFECTS IN THIN FILM TRANSISTORS (TFTS)H. YANG AND
G. LUCOVSKY, NORTH CAROLINA STATE UNIV., U.S.A 54413:50 (2) THE IMPROVED
LIGHT-INDUCED DEGRADATION AND THE POSSIBLE MECHANISM IN DEUTERATED
AMORPHOUS SILICON ALLOYJ.-H. WEI, M.-S. SUN AND S.-C. LEE, NAT! TAIWAN
UNIV., TAIWAN 54614:10 (3) AMORPHOUS SILICON AVALANCHE PHOTODIODE FILMS
USING FUNCTIONALLY GRADED SUPERLATTICESTRUCTUREK. SAWADA, Y. OKUMURA, Y.
HATANAKA AND T. ANDO, SHIZUOKA UNIV., JAPAN 55214:30 (4)
NEGATIVE-RESISTANCE EFFECTS IN LIGHT-EMITTING POROUS SILICON DIODESK.
UENO, H. KOYAMA AND N. KOSHIDA, TOKYO A&T UNIV., JAPAN 55414:50-15:20
AUTHOR S CORNERXXXM
|
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| spellingShingle | Extended abstracts of the 1997 International Conference on Solid State Devices and Materials September 16 - 19, 1997, Hamamatsu, Act City Hamamatsu Werkstoff (DE-588)4065579-9 gnd Halbleiterbauelement (DE-588)4113826-0 gnd |
| subject_GND | (DE-588)4065579-9 (DE-588)4113826-0 (DE-588)1071861417 |
| title | Extended abstracts of the 1997 International Conference on Solid State Devices and Materials September 16 - 19, 1997, Hamamatsu, Act City Hamamatsu |
| title_auth | Extended abstracts of the 1997 International Conference on Solid State Devices and Materials September 16 - 19, 1997, Hamamatsu, Act City Hamamatsu |
| title_exact_search | Extended abstracts of the 1997 International Conference on Solid State Devices and Materials September 16 - 19, 1997, Hamamatsu, Act City Hamamatsu |
| title_full | Extended abstracts of the 1997 International Conference on Solid State Devices and Materials September 16 - 19, 1997, Hamamatsu, Act City Hamamatsu |
| title_fullStr | Extended abstracts of the 1997 International Conference on Solid State Devices and Materials September 16 - 19, 1997, Hamamatsu, Act City Hamamatsu |
| title_full_unstemmed | Extended abstracts of the 1997 International Conference on Solid State Devices and Materials September 16 - 19, 1997, Hamamatsu, Act City Hamamatsu |
| title_short | Extended abstracts of the 1997 International Conference on Solid State Devices and Materials |
| title_sort | extended abstracts of the 1997 international conference on solid state devices and materials september 16 19 1997 hamamatsu act city hamamatsu |
| title_sub | September 16 - 19, 1997, Hamamatsu, Act City Hamamatsu |
| topic | Werkstoff (DE-588)4065579-9 gnd Halbleiterbauelement (DE-588)4113826-0 gnd |
| topic_facet | Werkstoff Halbleiterbauelement Konferenzschrift 1997 Hamamatsu |
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