Extended abstracts of the 19th Conference on Solid State Devices and Materials August 25 - 27, 1987, Tokyo
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Format: | Tagungsbericht Buch |
Sprache: | English |
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Tokyo
Japan Soc. of Applied Physics
1987
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111 | 2 | |a Conference on Solid State Devices and Materials |n 19 |d 1987 |c Tokio |j Verfasser |0 (DE-588)5078836-X |4 aut | |
245 | 1 | 0 | |a Extended abstracts of the 19th Conference on Solid State Devices and Materials |b August 25 - 27, 1987, Tokyo |c sponsored by The Japan Society of Applied Physics |
246 | 1 | 3 | |a Solid state devices and materials |
264 | 1 | |a Tokyo |b Japan Soc. of Applied Physics |c 1987 | |
300 | |a VII, 565 S. |b Ill., graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
650 | 7 | |a Semiconducteur - congrès |2 ram | |
650 | 7 | |a Transistor mos - congrès |2 ram | |
650 | 7 | |a Électronique de l'état solide - Congrès |2 ram | |
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689 | 0 | |5 DE-604 | |
999 | |a oai:aleph.bib-bvb.de:BVB01-008650035 |
Datensatz im Suchindex
DE-BY-TUM_call_number | 0024/75 B 268-19 |
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DE-BY-TUM_katkey | 1084860 |
DE-BY-TUM_local_keycode | ko |
DE-BY-TUM_media_number | 040020821285 |
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any_adam_object | |
author_corporate | Conference on Solid State Devices and Materials Tokio |
author_corporate_role | aut |
author_facet | Conference on Solid State Devices and Materials Tokio |
author_sort | Conference on Solid State Devices and Materials Tokio |
building | Verbundindex |
bvnumber | BV012723235 |
classification_rvk | ZN 4800 |
classification_tum | PHY 685f ELT 060f ELT 270f |
ctrlnum | (OCoLC)490136617 (DE-599)BVBBV012723235 |
discipline | Physik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Conference Proceeding Book |
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genre | (DE-588)1071861417 Konferenzschrift 1987 Tokio gnd-content |
genre_facet | Konferenzschrift 1987 Tokio |
id | DE-604.BV012723235 |
illustrated | Illustrated |
indexdate | 2024-11-25T17:16:24Z |
institution | BVB |
institution_GND | (DE-588)5078836-X |
isbn | 4930813212 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008650035 |
oclc_num | 490136617 |
open_access_boolean | |
owner | DE-706 DE-11 DE-91 DE-BY-TUM |
owner_facet | DE-706 DE-11 DE-91 DE-BY-TUM |
physical | VII, 565 S. Ill., graph. Darst. |
publishDate | 1987 |
publishDateSearch | 1987 |
publishDateSort | 1987 |
publisher | Japan Soc. of Applied Physics |
record_format | marc |
spellingShingle | Extended abstracts of the 19th Conference on Solid State Devices and Materials August 25 - 27, 1987, Tokyo Semiconducteur - congrès ram Transistor mos - congrès ram Électronique de l'état solide - Congrès ram Werkstoff (DE-588)4065579-9 gnd Halbleiterbauelement (DE-588)4113826-0 gnd |
subject_GND | (DE-588)4065579-9 (DE-588)4113826-0 (DE-588)1071861417 |
title | Extended abstracts of the 19th Conference on Solid State Devices and Materials August 25 - 27, 1987, Tokyo |
title_alt | Solid state devices and materials |
title_auth | Extended abstracts of the 19th Conference on Solid State Devices and Materials August 25 - 27, 1987, Tokyo |
title_exact_search | Extended abstracts of the 19th Conference on Solid State Devices and Materials August 25 - 27, 1987, Tokyo |
title_full | Extended abstracts of the 19th Conference on Solid State Devices and Materials August 25 - 27, 1987, Tokyo sponsored by The Japan Society of Applied Physics |
title_fullStr | Extended abstracts of the 19th Conference on Solid State Devices and Materials August 25 - 27, 1987, Tokyo sponsored by The Japan Society of Applied Physics |
title_full_unstemmed | Extended abstracts of the 19th Conference on Solid State Devices and Materials August 25 - 27, 1987, Tokyo sponsored by The Japan Society of Applied Physics |
title_short | Extended abstracts of the 19th Conference on Solid State Devices and Materials |
title_sort | extended abstracts of the 19th conference on solid state devices and materials august 25 27 1987 tokyo |
title_sub | August 25 - 27, 1987, Tokyo |
topic | Semiconducteur - congrès ram Transistor mos - congrès ram Électronique de l'état solide - Congrès ram Werkstoff (DE-588)4065579-9 gnd Halbleiterbauelement (DE-588)4113826-0 gnd |
topic_facet | Semiconducteur - congrès Transistor mos - congrès Électronique de l'état solide - Congrès Werkstoff Halbleiterbauelement Konferenzschrift 1987 Tokio |
work_keys_str_mv | AT conferenceonsolidstatedevicesandmaterialstokio extendedabstractsofthe19thconferenceonsolidstatedevicesandmaterialsaugust25271987tokyo AT conferenceonsolidstatedevicesandmaterialstokio solidstatedevicesandmaterials |