International Workshop on Nano Physics and Electronics Roppongi Campus, University of Tokyo, 18 - 20 September, 1997
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| 001 | BV012387981 | ||
| 003 | DE-604 | ||
| 005 | 19990225 | ||
| 007 | t | ||
| 008 | 990203s1998 ad|| |||| 10||| eng d | ||
| 035 | |a (OCoLC)245711484 | ||
| 035 | |a (DE-599)BVBBV012387981 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91 |a DE-703 | ||
| 084 | |a ELT 270f |2 stub | ||
| 084 | |a PHY 685f |2 stub | ||
| 111 | 2 | |a NPE |d 1997 |c Tokio |j Verfasser |0 (DE-588)5299355-3 |4 aut | |
| 245 | 1 | 0 | |a International Workshop on Nano Physics and Electronics |b Roppongi Campus, University of Tokyo, 18 - 20 September, 1997 |c NPE 97 |
| 264 | 1 | |a Oxford |b Pergamon |c 1998 | |
| 300 | |a S. 1059 - 1630 |b Ill., graph. Darst. | ||
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| 337 | |b n |2 rdamedia | ||
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| 490 | 0 | |a Solid-state electronics |v 42,7/8 | |
| 500 | |a Einzelaufnahme eines Zeitschr.-H. | ||
| 650 | 0 | 7 | |a Nanotechnologie |0 (DE-588)4327470-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterphysik |0 (DE-588)4113829-6 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1997 |z Tokio |2 gnd-content | |
| 689 | 0 | 0 | |a Halbleiterphysik |0 (DE-588)4113829-6 |D s |
| 689 | 0 | 1 | |a Nanotechnologie |0 (DE-588)4327470-5 |D s |
| 689 | 0 | |5 DE-604 | |
| 856 | 4 | 2 | |m Digitalisierung TU Muenchen |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008402213&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
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| adam_text | SOLID-STATE ELECTRONICS
VOLUME
42
NUMBER
7-8
JULY-AUGUST
1998
SPECIAL ISSUE
NPE
97
CONTENTS
J. R. Tucker and T.-C. Shen: Prospects for atomically ordered device structures based
on STM lithography
.................................................................................................................. 1061
S.
Sasa.
T.
Ikeda, A. Kajiuchi and M. Inoue:
FM
fabrication and characterization of
InAs/AlGaSb nanostructures
.................................................................................................... 1069
H. Fukutome, K.
Takáno,
S. Hasegawa, H. Nakashima, T.
Aoyama and
H. Arimoto: Direct imaging of
nano pn
junctions and their bulk electronic properties
with the use of scanning tunneling microscopy
..................................................................... 1075
K. Yamanaka, S. Ishida. K.. Suzuki. H. Hayashi, H. Watabe and Y. Arakawa: Light
emission from individual InAs/GaAs self-assembled quantum dots excited by tunneling
current injection
......................................................................................................................... 1079
Y. Toda,
S.
Shinomori,
К.
Suzuki and
Y. Arakawa:
Near-field optical spectroscopy of
self-assembled quantum dots: NSOM apparatus for measuring the features of single dots
1083
R.
Akis,
P. Vasilopoulos and P. Debray: Transmission antiresonances and novel
bound states in cross structures at weak magnetic fields
...................................................... 1087
S. G. den Hartog, S. J. van
der Molen,
B. J.
van Wees,
T. M.
Klapwijk
and
G.
BoRGHS: Magnetic field sensitivity of the Coulomb anomaly in the conductance of a
phase-coherent disordered 2-dimensional electron gas
......................................................... 1093
A. F. Morpurgo, J. P. Heida, B. J. van Wees, T. M.
Klapwijk
and G. Borghs:
Experiments on Aharonov-Bohm effect under the influence of uniform spin orbit
interaction: Possible observation of Berry s phase in electronic transport
........................ 1099
A. Kristensen,
С
B. Sorensen, P.
E. Lindelof,
J. Bo Jensen, J.
Nygård,
M.
Zaffalon,
F. Beuscher, M. Michel
and A. Forchel: Quantum point contacts formed
in GaAs/GaAlAs heterostructures by shallow etching and overgrowth
............................. 1103
A. Natori, Y. Takase and K. Natori: Magnetocondactance of a mesoscopic
rectangular loop
......................................................................................................................... 1109
[continued overleaf
INDEXED IN
Res. Alen.
Cam.
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Appi. Sci..
Curr. Tech. Indx.
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INSPEC
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PERGAMON
ISSN 0038-1I01
SSELAS
42(7-8) 1059-1630 (1998)
SOLID-STATE ELECTRONICS
VOLUME
42
NUMBER
7-8
JULY-AUGUST
1998
CONTENTS—continued]
K. Hieke, J.-O.
Wesström,
T. Palm, B.
Stálnacke
and B. Stoltz: Ballistic transport
and gate control mechanism in deeply etched electron-waveguide based devices
............. 1115
M.
Като,
A. Endo, S. Katsumoto and Y. Iye: Control of magnetic field modulation on
two-dimensional electron gas at the GaAs/AlGaAs
heterointerface
by parallel magnetic
field
...............................................................................................................................................
U21
Y. Ochiai, K. Yamamoto, J. P. Bird, K. Ishibashi, Y. Aoyagi, T.
Sugano,
R.
Akis
and
D. K
Ferry: Wavefunction scarring and classical commensurability in corrugated
quantum wires
............................................................................................................................
H
25
S.
Kawabata and K. Nakamura:
hße
Oscillations and negative magneto-resistance in
ballistic chaotic Aharonov-Bohm billiards
............................................................................. 1131
J.
Herfort
D.
G. Austing Y. Hirayama: Electron transport in MIS-like GaAs/
Al.vGai_.vAs heterostructures with nanostructered gates
...................................................... 1135
S. Uryu and T.
Ando:
Aharonov-Bohm type oscillation in
antidot
lattices
.................. 1141
S. Ishizaka and T.
Ando:
Commensurability peak in square and triangular
antidot
arrays
........................................................................................................................................... 1147
K. Yamanaka and K. Hirakawa: Far-infrared photoresponse of the AlGaAs/GaAs
low-dimensional electron systems constricted by split-gates
................................................ 1151
T. Machida, H. Hirai, S. Komiyama and Y. Shiraki: Geometry-dependent transition
between integer quantum-Hall states
...................................................................................... 1155
N.
Griffin, D. D. Arnone, D. J. Paul, M. Pepper, D. J. Robbins and A. C.
Churchill: Far-infrared cyclotron resonance study of the effect of strain and
localisation in Si/SiGe two dimensional electron gases
........................................................ 1159
T. Sanuki, S. Takaoka,
К. Ото, К.
Murase
and
К.
Gamo:
Breakdown of quantum
Hall effect in two dimensional electron system with
antidot
arrays
................................... 1165
J. L. Osborne, A. J. Shields, M. Y. Simmons,
N.
R. Cooper, D. A. Ritchie and
M. Pepper:
Excitons,
spin-waves and Skyrmions in the optical spectra of a two
dimensional electron gas
........................................................................................................... 1169
K.
Asano
and T.
Ando:
Breakdown of single mode approximation in quantum Hall
cyclotron resonance
................................................................................................................... 1175
M.
Ando,
A. Endo, S. Katsumoto and Y. Iye: Detection of fractional edge channel by
quantum point contacts
............................................................................................................. 1179
[continued
SOLID-STATE ELECTRONICS
VOLUME
42
NUMBER
7-8
JULY-AUGUST
1998
CONTENTS—continued]
Y. Ohno, A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, S. Kishimoto, F.
Matsukura, M. Yasumoto and A. Urayama: v=1 bilayer quantum Hall state at
arbitrary electron distribution in a double quantum well
.................................................... 1183
S. Kishimoto, Y. Ohno, F. Matsukura, H. Sakaki and H. Ohno: Etched-backgate
field-effect transistor structure for magnetotunneling study of low-dimensional electron
systems
......................................................................................................................................... 1187
К. Ото,
H. ISHiDA, S.
Takaoka and K.
Murase:
Magneto capacitance in quantum Hall
regime with external dc current
................................................................................................ 1191
T. P. Marlow, D. D. Arnone,
С
L. Foden, E.
H. Linfield, D.
A. Ritchie and
M. Pepper: The far-infrared magneto-optical response of strongly coupled 2DEGs near
the quantum and semi-classical limits
..................................................................................... 1195
N.
T. Bagraev, E. I. Chaikina, W. Gehlhoff, L. E. Klyachkin, I. I. Markov and
A. M. Malyarenko: Infrared induced emission from silicon quantum wires
................. 1199
M. Ogawa, M.
Ito,
S.
Fukushima and
T. Miyoshi:
Anisotropie
optical properties of
arbitrarily oriented quantum wires with arbitrary cross-sections
........................................ 1205
K.
Komori,
F.
Sasaki, X.-L. Wang, M. Ogura and H. Matsuhata: Barrier thickness
dependence of optical properties in GaAs coupled quantum wires
.................................... 1211
V. Voliotis, J. Bellessa, R. Grousson, X. L. Wang, M. Ogura and H. Matsuhata:
Microphotoluminescence studies of high quality single quantum wires
............................. 1217
M. Yamauchi, Y. Nakamura and H. Sakaki: Edge quantum wire structures with
novel doping profiles and their electronic states
.................................................................... 1223
K. Kumakura, J. Motohisa and T. Fukui: Transport characterization of GaAs
quantum dots connected with quantum wires fabricated by selective area metalorganic
vapor phase epitaxy
................................................................................................................... 1227
S.
Hara,
J. Motohisa and T. Fukui: Optical characterization and laser operation of
InGaAs quantum wires on GaAs multiatomic steps
............................................................ 1233
R. Rinaldi, A. Passaseo, M.
De Giorgi,
С.
Turco,
M. DeVittorio, D. Cannoletta
and R. ClNGOLANi
Electro-optic properties of InGaAs/GaAs quantum wires with
V-shaped profile
......................................................................................................................... 1239
А. С
Maciel,
J.
Кім,
J.
F. Ryan,
Α.
Schwarz,
Th. Schapers,
Ch. Dieker,
H. Hardtdegen and H.
Lüth:
Electron
states, magneto-transport and carrier dynamics
in modulation-doped V-groove quantum wires
..................................................................... 1245
[continued overleaf
SOLID-STATE ELECTRONICS
VOLUME
42
NUMBER
7 8
JULY-AUGUST
1998
CONTENTS— continued/
Ph
Lelong, O
Heller and G. Bastard: Coulomb interactions in small InAs quantum
dots
............................................................................................................................................... 1251
J. Haruyama, D.
N.
Davydov, D. Routkevitch, D. Ellis, B. W.
Statt,
M.
Moskovits
and
J.
M Xu: Coulomb
blockade in nano-junction array fabricated
by nonlithographic method
....................................................................................................... 1257
Y. Oka, K. Yanata, H. Okamoto, M. Takahashi and J. Shen: Giant magneto-optical
effects in diluted magnetic semiconductor nanostructures
................................................... 1267
N.
Tsukada,
M
Gotoda, T.
Isu,
M. Nunoshita and T. Nishino: Rotational transfer
and dynamical bunching of an electron in three coupled quantum dots induced by a
circularly polarized electric field
............................................................................................... 1273
J. P. Bird, A. P. Micolich,
D. K
Ferry, R.
Akis,
Y. Ochiai, Y. Aoyagi
and
T.
Sugano:
The influence of environmental coupling on phase breaking in open
quantum dots
.............................................................................................................................. 1281
P. Radojkovic, M. Schwartzkopf, T. Gabriel and E.
Hartmann:
Metallic
nanoparticles for compact nanostructure fabrication and observation of single-electron
phenomena at room temperature
............................................................................................. 1287
P. M. Martin, A. E. Belyaev, L. Eaves, P.
С
Main,
F. W. Sheard, T.
Ihn
and
M. Henini: Capacitance-voltage studies of the electrostatic profile of single barrier
GaAs AlAs/GaAs structures containing self assembled quantum dots
.............................. 1293
R.
Akis
and D. K. Ferry: The role of periodic orbits in coupled, open, ballistic quantum
dots
............................................................................................................................................... 1297
T. Suzuki.
Y. Haga.
К.
Nomoto.
К.
Taira
and
I. Hase:
Tunneling current through
self-assembled InAs quantum dots embedded in symmetric and asymmetric AlGaAs
barriers
......................................................................................................................................... 1303
V. M. Fomin. E. P. Pokatilov. J. T. Devreese. S.
N.
Klimin, V.
N.
Gladilin
and S.
N.
Balaban: Multiphonon
photoluminescence
and Raman scattering in
semiconductor quantum dots
................................................................................................... 1309
Y. Kanemitsu and S. Okamoto: Optical properties of hydrogen terminated silicon
nanocrystals
................................................................................................................................ 1315
T. Okuno. H.-W. Ren, M. Sugisaki, K. Nishi, S.
Sugou
and Y. Masumoto: Time-
resolved luminescence study of InP quantum dots in GalnP matrix
................................. 1319
M. Sugisaki, H.-W. Ren, S.
Sugou,
К.
Nishi and Y. Masumoto: Sharp
photoluminescence
lines of InAs quantum dot embedded in GaAs mesa
......................... 1325
[continued
SOLID-STATE ELECTRONICS
VOLUME
42
NUMBER
7-8
JULY AUGUST
1998
CONTENTS—continued]
T.-E. Nee. N.-T. Yeh, J.-I. Chyi and C.-T. Lee: Matrix-dependent structural and
photoluminescence properties of Ino.5Gao.5As quantum dots grown by molecular beam
epitaxy
......................................................................................................................................... 1331
J. MoTOHiSA, J. J.
Baumberg,
A. P. Heberle and J. Allam: Anomalous excitation
intensity dependence of photoluminescence from InAs self-assembled quantum dots
..... 1335
Y. Sakuma, Y. Awano, T. Futatsugi,
N.
Yokoyama, K. Uchida and
N.
Miura:
Magneto-photoluminescence study of quantum dots formed on tetrahedral-shaped
recesses
......................................................................................................................................... 1341
K.
Fujii,
T.
Yoshizawa, T. Ohyama, K.
Ото,
S.
Takaoka,
К.
Murase
and
К.
Gamo:
Time resolved
far-infrared magneto-optical absorption of a quantum dot array
............. 1349
G. L. Snider,
A. O. Orlov,
I. Amlani, G. H. Bernstein.
С
S. Lent. J. L.
Merz,
and
W.
Porod:
A functional cell for quantum-dot cellular automata
...................................... 1355
S. Adachi and Y. Isawa: Cell design and dynamics of quantum cellular automata
...... 1361
Y. Funabashi, K. Ohtsubo, M.
Eto
and K. Kawamura: Dephasing processes in
transport through two-level quantum dot
.............................................................................. 1367
M.
Ето:
Numerical studies of transport properties through artificial atoms and
molecules
..................................................................................................................................... 1373
H. Akera: Aharonov-Bohm effect in the Coulomb-blockade regime
............................... 1379
M. Shin, S. Lee, K. W. Park and E.-H. Lee: Charge solitons in closed two-dimensional
tunnel junction arrays
................................................................................................................ 1385
S. Yamada, T. Kikutani,
Ν. Αοκι,
C. Hong, M.
Tona
and H.
Hori:
Magnetic force
microscopy analysis and quantum transport in ferromagnetic dot structure embedded in
semiconductor quantum wires
.................................................................................................. 1391
X. H. Wang and K.
A. Chao:
Intrinsic limits of thermometers based on Coulomb
charging effect in arrays of tunnel junctions
.......................................................................... 1397
F. Wakaya, S. Iwabuchi, H. Higurashi, Y. Nagaoka and K.
Gamo:
Single electron
tunneling device controlled by environmental impedance modulation
............................... 1401
Κ. Ονο, Η.
Shimada and Y. Ootuka: Ferromagnetic single electron transistor
............ 1407
Y. Hanada,
N.
Ono,
H.
Fujikura,
H.
Hasegawa: Direct formation of InGaAs
coupled quantum wire-dot structures by selective molecular beam epitaxy on InP
patterned substrates
................................................................................................................... 1413
[continued overleaf
SOLID-STATE ELECTRONICS
VOLUME
42
NUMBER
7-8
JULY-AUGUST
1998
CONTESTS—continued]
H. Okada. H.
Fujikura,
T.
Hashizume and
H. Hasegawa: A
novel wrap-gate-
controlled single electron transistor formed on an InGaAs ridge quantum wire grown by
selective MBE
............................................................................................................................. 1419
H. Ishikuro and T. Hiramoto: Hopping transport in multiple-dot silicon single electron
MOSFET
..................................................................................................................................... 1425
S. Sasaki, K. Tsubaki, S. Tarucha, A. Fujiwara and Y. Takahashi: Observation of
shot noise suppression at the peaks of Coulomb oscillations
.............................................. 1429
D. Bimberg,
N. N.
Ledentsov, M.
Grundmann, F. Heinrichsdorff,
V.
M.
Ustinov,
P. S. Kopev, Zh. I. Alferov and J.
A. Lott:
Edge and vertical cavity surface emitting
InAs quantum dot lasers
........................................................................................................... 1433
K. Ujihara and I. Takahashi: Spectrum of spontaneous emission observed outside a
microcavity
.................................................................................................................................. 1439
H. Tsuchiya and T. Miyoshi: Influence of phonon bottleneck on a quantum dot laser
1443
P. Harrison and R. W. Kelsall: The relative importance of electron-electron and
electron-phonon scattering in terahertz quantum cascade lasers
........................................ 1449
S. G. den Hartog, B. J. van Wees, Yu. V. Nazarov, T. M.
Klapwijk
and G. Borghs:
Giant Andreev backscattering and reentrant resistance in a 2-dimensional electron gas
coupled to superconductors
...................................................................................................... 1453
S. Lee, K. W. Park, M. Shin, E.-H. Lee and H. C.
К
won: Magnetic field dependence of
the resistance anomaly in superconducting mesoscopic aluminum structures
................... 1459
H. Sato. S. Katsumoto and Y. Iye: Non-invasive measurements of mesoscopic
superconductors by superconducting single electron transistors
......................................... 1463
Y. Miyamoto, J. Yoshinaga, H.
Toda,
T.
Arai,
H.
Hongo,
T.
Hattori,
А. Кокиво
and K. Furuya: Sub-micron GalnAs/InP hot electron transistors by EBL process and
size dependence of current gain
............................................................................................... 1467
Y. Nakamura and J. S. Tsai: Photon-assisted Cooper-pair tunneling in a super¬
conducting single-electron transistor
....................................................................................... 1471
R. Yagi, S. Kobayashi and Y. Ootuka: Effect of shunt resistor on superconductor-
insulator transition in superconducting single small
Josephson
junction
........................... 1477
A. Orito. A. Fukushima, S. Katsumoto and Y. Iye: Microstructured thin films and
multilayers of superconductor and ferromagnetic metal
...................................................... 1481
¡continued
SOLID-STATE ELECTRONICS
VOLUME
42
NUMBER
7-8
JULY-AUGUST
1998
CONTENTS—continued]
A. Nogaret, L. Eaves, P.
С
Main, M. Henini, D. K. Maude,
J. C
Portal.
E. Molinari and S. P. Beaumont: Magneto-acoustic phonon antiresonances in
Wannier-Stark superlattices
..................................................................................................... 1489
E. Schomburg, J.
Grenzer,
К.
Hofbeck,
T.
Blomeier,
S. Winnerl, S. Brandl, A. A.
Ignatov, K.
F. Renk,
D.
G. Pavelev, Yu. Koschurinov,
V. Ustinov,
A. Zhukov.
A. Kovsch, S.
Ivanov
and P. S. Kopev:
Millimeter wave generation with
a quasi
planar
superlattice
electronic device.....................................................................................................
1495
M.
Ando,
M. Nakayama, H. Nishimura, M. Hosoda,
N.
Ohtani,
N.
Egami
and
K. Fujiwara: Wavefunction delocalization
of strongly localized Stark-ladder states in a
GaAs/AlAs superlattice
............................................................................................................. 1499
M. Morifuji, S. K. Wah and C. Hamaguchi: Incoherent Bloch oscillation and
delocalization of Stark-ladders due to impurity scattering
.................................................. 1505
N.
Ohtani,
N.
Egami,
К.
Fujiwara and
H. T.
Grahn: Photocurrent self-oscillations in
undoped GaAs/AlAs superlattices modulated by an external ac voltage
.......................... 1509
Y. Isawa,
N.
Matsubara and T. Ohuti: Shot noise in double barrier structures
......... 1515
T. Tsuchiya and
S. Katayama: A
quantum Monte Carlo study on excitonic molecules
in quantum wells
........................................................................................................................ 1523
M. Ogawa, T.
Sugano
and T. Miyoshi: Multiband quantum transport with
Г-Х
valley-
mixing via evanescent states
..................................................................................................... 1527
Y. B. Li, J. W. Cockburn, I. A. Larkin, J. P. Duck, M. J. Birkett,
M. S.
Skolnick,
M. Hopkinson, R. Grey and G. Hill: Inversion of electron sub-band population in a
GaAs/AlGaAs triple barrier tunnelling structure
.................................................................. 1533
M. Inada, T. Kikutani, H.
Hori
and S. Yamada: Fabrication of GaAs-Ge-GaAs
lateral narrow junctions and low-temperature hole transport
............................................. 1539
M.
Asada,
К.
Osada
and
W.
Saitoh: Theoretical analysis and fabrication of small area
metal/insulator resonant tunneling diode integrated with patch antenna for terahertz
photon assisted tunneling
.......................................................................................................... 1543
M. Tsutsui, W. Saitoh, K. Yamazaki and M.
Asada:
Proposal and analysis of coupled
channel tunneling
FET
with new heterostructures on silicon
.............................................. 1547
M. Yamaguchi, R. Sugimoto and
N.
Sawaki: Relocalization and mobility of electrons
at the resonance of ground states in a coupled double quantum well structure
............... 1553
M. Katsuno,
N.
Sawaki, T. Suzuki and K.
Hara:
Scaling of the negative magneto-
resistance in an Si atomic-layer-doped GaAs
......................................................................... 1557
[continued overleaf
SOLID-STATE ELECTRONICS
VOLUME
42
NUMBER
7-8
JULY-AUGUST
1998
CONTENTS
ťominuetlj
S. K.ATAYAMA
and
T. Tsuchiya:
Far-infrared emission spectra from hot two-
dimensional plasma in heterojunctions
................................................................................... 1561
K.-Y. Jang, Y.
Okaim
and M. Kawabe: Band-gap energy anomaly observed in AlGaAs
grown by atomic hydrogen-assisted molecular beam epitaxy
.............................................. 1565
A. J. Shields. J. L. Osborne, D. M. Whittaker, M. Y. Simmons, D. A. Ritchie and
M. Pepper: Electron coupling effects on negatively charged
excitons
in GaAs double
quantum wells
............................................................................................................................. 1569
T. Kitada. T. Saeki, M. Ohashi, S. Shimomura and S. Hiyamizu: Extremely uniform
InoonGao^As/GaAs
superlattice grown on a
(41
1)A GaAs substrate by molecular beam
epitaxy
......................................................................................................................................... 1575
M. Higashiwaki. K. Kuroyanagi, K. FuJiTA,
N.
Egami,
S. Shimomura and S.
Hiyamizu: Temperature dependence of exciton lifetimes in high-density GaAs/
(GaAs)4(AlAs): quantum wires grown on (775)B-oriented GaAs substrates
.................... 1581
E.
Scholl
and S.
Bose:
Kinetic Monte Carlo simulation of the nucleation stage of the
self-organized growth of quantum dots
.................................................................................. 1587
K. Eberl. O. G. Schmidt. S. Schieker,
N.
Y. Jin-Phillipp and F. Phillipp: Formation
and optical properties of carbon-induced Ge dots
................................................................ 1593
L. E.
Wernersson.
N.
Carlsson, B. Gustafson, A.
Litwin,
L. Montelius,
H.
Pettersson.
L.
Samuelson and
W.
Seifert:
Metal-semiconductor heterostructures
in
3D
for electron storage and vertical injection
................................................................... 1599
Y. Inolje, M.
Fujii,
S.
Hayashi and K. Yamamoto: Single electron tunneling through
Ge nanocrystal fabricated by cosputtering method
............................................................... 1605
B.-R. Shim, S.
Torii,
T.
Ota, K. Kobayashi, K. Maehashi,
S. Hasegawa, K.
Inoue
and H. Nakashima: Formation of InGaAs strained quantum wires on GaAs vicinal
(110)
substrates grown by molecular beam epitaxy
.............................................................. 1609
K. Akahane, K. Okino, Y. Okada and M. Kawabe: Self-organized quantum dots
grown on GaAs(311)B by atomic hydrogen-assisted molecular beam epitaxy
.................. 1613
T. Mukaiyama, K.
Saito,
H.
Ishikuro, M. Takamiya, T. Saraya and
T. Hiramoto: Fabrication of gate-all-around MOSFET by silicon anisotropic etching
technique
..................................................................................................................................... 1623
M. Watanabe. W. Saitoh, Y. Aoki and J. Nishiyama: Epitaxial growth of nanometer-
thick CaF2/CdF2 heterostructures using partially ionized beam epitaxy
........................... 1627
INDEXED IN Res. Alert,
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.
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PERGAMON ISSN
оози-ііоі
SSELAS 42(7-8) 1059 1630 (1998)
|
| any_adam_object | 1 |
| author_corporate | NPE Tokio |
| author_corporate_role | aut |
| author_facet | NPE Tokio |
| author_sort | NPE Tokio |
| building | Verbundindex |
| bvnumber | BV012387981 |
| classification_tum | ELT 270f PHY 685f |
| ctrlnum | (OCoLC)245711484 (DE-599)BVBBV012387981 |
| discipline | Physik Elektrotechnik |
| format | Conference Proceeding Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01526nam a2200373 cb4500</leader><controlfield tag="001">BV012387981</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">19990225 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">990203s1998 ad|| |||| 10||| eng d</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)245711484</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV012387981</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-703</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 270f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 685f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="111" ind1="2" ind2=" "><subfield code="a">NPE</subfield><subfield code="d">1997</subfield><subfield code="c">Tokio</subfield><subfield code="j">Verfasser</subfield><subfield code="0">(DE-588)5299355-3</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">International Workshop on Nano Physics and Electronics</subfield><subfield code="b">Roppongi Campus, University of Tokyo, 18 - 20 September, 1997</subfield><subfield code="c">NPE 97</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Oxford</subfield><subfield code="b">Pergamon</subfield><subfield code="c">1998</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">S. 1059 - 1630</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Solid-state electronics</subfield><subfield code="v">42,7/8</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Einzelaufnahme eines Zeitschr.-H.</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Nanotechnologie</subfield><subfield code="0">(DE-588)4327470-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterphysik</subfield><subfield code="0">(DE-588)4113829-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="y">1997</subfield><subfield code="z">Tokio</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiterphysik</subfield><subfield code="0">(DE-588)4113829-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Nanotechnologie</subfield><subfield code="0">(DE-588)4327470-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">Digitalisierung TU Muenchen</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008402213&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-008402213</subfield></datafield></record></collection> |
| genre | (DE-588)1071861417 Konferenzschrift 1997 Tokio gnd-content |
| genre_facet | Konferenzschrift 1997 Tokio |
| id | DE-604.BV012387981 |
| illustrated | Illustrated |
| indexdate | 2024-11-25T17:16:24Z |
| institution | BVB |
| institution_GND | (DE-588)5299355-3 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008402213 |
| oclc_num | 245711484 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-703 |
| owner_facet | DE-91 DE-BY-TUM DE-703 |
| physical | S. 1059 - 1630 Ill., graph. Darst. |
| publishDate | 1998 |
| publishDateSearch | 1998 |
| publishDateSort | 1998 |
| publisher | Pergamon |
| record_format | marc |
| series2 | Solid-state electronics |
| spellingShingle | International Workshop on Nano Physics and Electronics Roppongi Campus, University of Tokyo, 18 - 20 September, 1997 Nanotechnologie (DE-588)4327470-5 gnd Halbleiterphysik (DE-588)4113829-6 gnd |
| subject_GND | (DE-588)4327470-5 (DE-588)4113829-6 (DE-588)1071861417 |
| title | International Workshop on Nano Physics and Electronics Roppongi Campus, University of Tokyo, 18 - 20 September, 1997 |
| title_auth | International Workshop on Nano Physics and Electronics Roppongi Campus, University of Tokyo, 18 - 20 September, 1997 |
| title_exact_search | International Workshop on Nano Physics and Electronics Roppongi Campus, University of Tokyo, 18 - 20 September, 1997 |
| title_full | International Workshop on Nano Physics and Electronics Roppongi Campus, University of Tokyo, 18 - 20 September, 1997 NPE 97 |
| title_fullStr | International Workshop on Nano Physics and Electronics Roppongi Campus, University of Tokyo, 18 - 20 September, 1997 NPE 97 |
| title_full_unstemmed | International Workshop on Nano Physics and Electronics Roppongi Campus, University of Tokyo, 18 - 20 September, 1997 NPE 97 |
| title_short | International Workshop on Nano Physics and Electronics |
| title_sort | international workshop on nano physics and electronics roppongi campus university of tokyo 18 20 september 1997 |
| title_sub | Roppongi Campus, University of Tokyo, 18 - 20 September, 1997 |
| topic | Nanotechnologie (DE-588)4327470-5 gnd Halbleiterphysik (DE-588)4113829-6 gnd |
| topic_facet | Nanotechnologie Halbleiterphysik Konferenzschrift 1997 Tokio |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008402213&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT npetokio internationalworkshoponnanophysicsandelectronicsroppongicampusuniversityoftokyo1820september1997 |