Nitride semiconductors 1997 proceedings of the second International Conference on Nitride Semiconductors, Tokushima, Japan, October 27 - 31, 1997
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Format: | Tagungsbericht Buch |
Sprache: | English |
Veröffentlicht: |
Amsterdam [u.a.]
Elsevier
1998
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Schriftenreihe: | Journal of crystal growth
189/190 |
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245 | 1 | 0 | |a Nitride semiconductors 1997 |b proceedings of the second International Conference on Nitride Semiconductors, Tokushima, Japan, October 27 - 31, 1997 |c ed. by: K. Hiramatsu ... |
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Datensatz im Suchindex
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any_adam_object | |
author2 | Hiramatsu, Kazumasa |
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format | Conference Proceeding Book |
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genre_facet | Konferenzschrift |
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illustrated | Illustrated |
indexdate | 2024-12-23T14:49:30Z |
institution | BVB |
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language | English |
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physical | XX, 866 S. Ill., graph. Darst. |
publishDate | 1998 |
publishDateSearch | 1998 |
publishDateSort | 1998 |
publisher | Elsevier |
record_format | marc |
series2 | Journal of crystal growth |
spelling | Nitride semiconductors 1997 proceedings of the second International Conference on Nitride Semiconductors, Tokushima, Japan, October 27 - 31, 1997 ed. by: K. Hiramatsu ... Amsterdam [u.a.] Elsevier 1998 XX, 866 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Journal of crystal growth 189/190 Einzelaufnahme eines Zeitschr.-Bd. Nitrures - Congrès ram Semiconducteurs - Congrès ram Semiconducteurs à large bande interdite - Congrès ram Halbleiter (DE-588)4022993-2 gnd rswk-swf Stickstoffverbindungen (DE-588)4183288-7 gnd rswk-swf Nanostruktur (DE-588)4204530-7 gnd rswk-swf Kristallwachstum (DE-588)4123579-4 gnd rswk-swf (DE-588)1071861417 Konferenzschrift gnd-content Stickstoffverbindungen (DE-588)4183288-7 s Halbleiter (DE-588)4022993-2 s Kristallwachstum (DE-588)4123579-4 s Nanostruktur (DE-588)4204530-7 s DE-604 Hiramatsu, Kazumasa edt International Conference on Nitride Semiconductors 2 1997 Tokushima Sonstige (DE-588)5287966-5 oth |
spellingShingle | Nitride semiconductors 1997 proceedings of the second International Conference on Nitride Semiconductors, Tokushima, Japan, October 27 - 31, 1997 Nitrures - Congrès ram Semiconducteurs - Congrès ram Semiconducteurs à large bande interdite - Congrès ram Halbleiter (DE-588)4022993-2 gnd Stickstoffverbindungen (DE-588)4183288-7 gnd Nanostruktur (DE-588)4204530-7 gnd Kristallwachstum (DE-588)4123579-4 gnd |
subject_GND | (DE-588)4022993-2 (DE-588)4183288-7 (DE-588)4204530-7 (DE-588)4123579-4 (DE-588)1071861417 |
title | Nitride semiconductors 1997 proceedings of the second International Conference on Nitride Semiconductors, Tokushima, Japan, October 27 - 31, 1997 |
title_auth | Nitride semiconductors 1997 proceedings of the second International Conference on Nitride Semiconductors, Tokushima, Japan, October 27 - 31, 1997 |
title_exact_search | Nitride semiconductors 1997 proceedings of the second International Conference on Nitride Semiconductors, Tokushima, Japan, October 27 - 31, 1997 |
title_full | Nitride semiconductors 1997 proceedings of the second International Conference on Nitride Semiconductors, Tokushima, Japan, October 27 - 31, 1997 ed. by: K. Hiramatsu ... |
title_fullStr | Nitride semiconductors 1997 proceedings of the second International Conference on Nitride Semiconductors, Tokushima, Japan, October 27 - 31, 1997 ed. by: K. Hiramatsu ... |
title_full_unstemmed | Nitride semiconductors 1997 proceedings of the second International Conference on Nitride Semiconductors, Tokushima, Japan, October 27 - 31, 1997 ed. by: K. Hiramatsu ... |
title_short | Nitride semiconductors 1997 |
title_sort | nitride semiconductors 1997 proceedings of the second international conference on nitride semiconductors tokushima japan october 27 31 1997 |
title_sub | proceedings of the second International Conference on Nitride Semiconductors, Tokushima, Japan, October 27 - 31, 1997 |
topic | Nitrures - Congrès ram Semiconducteurs - Congrès ram Semiconducteurs à large bande interdite - Congrès ram Halbleiter (DE-588)4022993-2 gnd Stickstoffverbindungen (DE-588)4183288-7 gnd Nanostruktur (DE-588)4204530-7 gnd Kristallwachstum (DE-588)4123579-4 gnd |
topic_facet | Nitrures - Congrès Semiconducteurs - Congrès Semiconducteurs à large bande interdite - Congrès Halbleiter Stickstoffverbindungen Nanostruktur Kristallwachstum Konferenzschrift |
work_keys_str_mv | AT hiramatsukazumasa nitridesemiconductors1997proceedingsofthesecondinternationalconferenceonnitridesemiconductorstokushimajapanoctober27311997 AT internationalconferenceonnitridesemiconductorstokushima nitridesemiconductors1997proceedingsofthesecondinternationalconferenceonnitridesemiconductorstokushimajapanoctober27311997 |