7th International Conference on Shallow-Level Centers in Semiconductors Amsterdam, The Netherlands, 17 - 19 July 1996
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| 111 | 2 | |a International Conference on Shallow Level Centers in Semiconductors |n 7 |d 1996 |c Amsterdam |j Verfasser |0 (DE-588)1601864-3 |4 aut | |
| 245 | 1 | 0 | |a 7th International Conference on Shallow-Level Centers in Semiconductors |b Amsterdam, The Netherlands, 17 - 19 July 1996 |c ed. C. A. J. Ammerlaan ... |
| 246 | 1 | 3 | |a Shallow-Level centers in semiconductors |
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| adam_text | 7TH INTERNATIONAL CONFERENCE ON SHALLOW-LEVEL CENTERS IN SEMICONDUCTORS
AMSTERDAM, THE NETHERLANDS, 17-19 JULY 1996 EDITORS C. A. J. AMMERLAAN
UNIV. OF AMSTERDAM, THE NETHERLANDS B. PAJOT UNIVERSIU DENIS DIDEROT.
FRANCE WORLD SCIENTIFIC SINGAPORE * NEW JERSEY * LONDON * HONG KONG
CONTENTS RESONANT POLARON EFFECT OF SHALLOW INDIUM DONORS IN CDTE M.
GRYNBERG, S. HUANT, M. L. SADOWSKI, G. MARTINEZ, J. KOSSUT, T.
WOJTOWICZ, G. KARCZEWSKI, J. M. SHI, F. M. PEETERS & J. T. DEVREESE 1
MAGNETIC RESONANCE OF DOPANTS AND DEFECTS IN GAN-BASED MATERIALS AND
DEVICES W. E. CARLOS 13 SOME ASPECTS OF THE HYDROGEN-DOPANT INTERACTIONS
IN COMPOUND SEMICONDUCTORS J. CHEVALLIER 25 SHALLOW ELECTRONIC TRAPS
ASSOCIATED WITH HYDROGEN COMPLEXES IN CRYSTALLINE SILICON A. N. SAFONOV,
E. C. LIGHTOWLERS & G. DAVIES 43 SHALLOW-LEVEL DONOR STATES OF STRONG
AND WEAK LOCALIZATION S. BEDNAREK & J. ADAMOWSKI 55 OPTICAL SPECTROSCOPY
OF SHALLOW STATES IN GAAS/ALGAAS QUANTUM WELLS P. O. HOLTZ, A. C.
FERREIRA, Q. X. ZHAO, B. MONEMAR, M. SUNDARAM, K. CAMPMAN, J. L. MERZ &
A. C. GOSSARD 67 NEGATIVE DONOR CENTERS AND DONOR-BOUND EXCITON
COMPLEXES IN TWO-DIMENSIONAL SYSTEMS IN A MAGNETIC FIELD A. B. DZYUBENKO
81 THE STATE OF THE ART OF N- AND P-TYPE DOPING IN II-VI SEMICONDUCTORS
HETEROSTRUCTURES N. MAGNEA, TH. BARON & K. SAMINADAYAR 93 CARBON DOPING
OF III-V SEMICONDUCTORS BY ION IMPLANTATION S. J. PEARTON & C. R.
ABERNATHY 107 XI PASSIVATION OF SHALLOW DOPANTS IN II-VI SEMICONDUCTORS
H. WOLF, T. FILZ, J. HAMANN, A. JOST, V. OSTHEIMER & TH. WICHERT 123
ZEEMAN SPECTROSCOPY OF NEUTRAL COPPER AND A COPPER RELATED ACCEPTOR IN
GERMANIUM R. E. M. VICKERS & P. FISHER 135 CARRIER SCATTERING BY NEUTRAL
DOUBLE DONORS AND ACCEPTORS: THEORY AND EXPERIMENT K. M. ITOH, W.
WALUKIEWICZ, N. M. HAEGEL, 0. D. DUBON, J. W. BEEMAN, J. MUTO & E. E.
HALLER 141 DONORS AND IMPURITY-BOUND PHONONS IN NITROGEN-DOPED ZNSE C.
MORHAIN, E. TOURNIE, G. NEU & J. P. FAURIE 147 THE ELECTRONIC STRUCTURE
OF THE SHALLOW BORON ACCEPTOR IN 6H-SIC: A PULSED EPR/ENDOR STUDY AT 95
GHZ T. MATSUMOTO, O. G. POLUEKTOV, J. SCHMIDT, P. G. BARANOV & E. N.
MOKHOV 153 BORON-RELATED INFRARED ABSORPTION IN DIAMOND E. GHEERAERT, A.
DENEUVILLE, J. MARABOU & P. RIBOT 159 EXCITED STATES OF THE VACANCY IN
DIAMOND: SHALLOW STATES OF A DEEP DEFECT A. M. STONEHAM & A. MAINWOOD
165 IS H PASSIVATING THE MG ACCEPTOR BOND-CENTRED IN INP:MG AND
ANTIBONDED IN GAAS:MG? R. BOUANANI-RAHBI, B. PAJOT, C. P. EWELS, S.
OBERG, J. GOSS, R. JONES, Y. NISSIM, B. THEYS & C. BLAAUW 171 LOCAL
VIBRATIONAL MODES OF SE-H COMPLEXES IN ALSB M. D. MCCLUSKEY, L. HSU, E.
E. HALLER, W. WALUKIEWICZ & P. BECLA 179 FIRST PAC STUDIES ON THE
HYDROGEN DIFFUSION IN III-V SEMICONDUCTORS A. BURCHARD, M. DEICHER, R.
MAGERLE, A. EGENTER, R. SPENGLER, V. N. FEDOSEYEV, V. I. MISHIN, D.
FORKEL-WIRTH & THE ISOLDE COLLABORATION 185 THEORY OF NONRADIATIVE
TRANSITION OF BISTABILITY CENTER AND APPLICATION TO DX-CENTER IN AL X
GAI. X AS H. NAKAYAMA, H. KATAYAMA-YOSHIDA & Y. KAYANUMA 191 THE NEW
SHALLOW THERMAL DONOR IN AL-DOPED SILICON: FORMATION KINETICS AND
METASTABILITY MECHANISMS P. KACZOR & L. DOBACZEWSKI 197 FAR-INFRARED
SPECTROSCOPY BASED ON SPECIFIC PROPERTIES OF SHALLOW-LEVEL CENTERS IN
BULK AND 2D SEMICONDUCTOR STRUCTURES W. KNAP & C. SKIERBISZEWSKI 203
EXCHANGE-CORRELATION EFFECTS IN THE HOLE BAND STRUCTURE OF P-TYPE
6-DOPING QUANTUM WELLS AND SUPERLATTICES G. M. SIPAHI, R. ENDERLEIN, L.
M. R. SCOLFARO & J. R. LEITE 209 SHALLOW DONOR IN SPHERICAL QUANTUM
ANTIDOTS R. BUCZKO & F. BASSANI 215 RECOMBINATION PROCESSES IN INDIUM
DOPED CDMNTE/CDTE MULTIPLE QUANTUM WELL STRUCTURES GROWN BY MBE J. P.
BERGMAN, B. MONEMAR, M. GODLEWSKI, T. WOJTOWICZ, G. KARCZEWSKI & J.
KOSSUT 221 SHALLOW CENTERS IN HEAVILY DOPED SILICON QUANTUM WELLS W.
GEHLHOFF, K. IRMSCHER, N. T. BAGRAEV, L. E. KLYACHKIN & A.M. MALYARENKO
227 OPTICALLY DETECTED RESONANCE SPECTROSCOPY OF III-V AND II-VI QUANTUM
WELLS M. S. SALIB, H. A. NICKEL, G. S. HEROLD, A. PETROU, B. D. MCCOMBE,
H. LUO & W. SCHAFF 233 SHALLOW THERMAL DONOR DEFECTS IN SILICON C. P.
EWELS, R. JONES, S. OBERG, J. MIRO & P. DEDK 239 PRESSURE DEPENDENCE OF
SE ABSORPTION LINES IN ALSB L. HSU, E. E. HALLER & A. K. RAMDAS 245 XIV
FINE STRUCTURE IN THE MAGNETIC RESONANCE OF SINGLE ACCEPTORS IN SILICON
S. HINDERER, H. SCHROTH, A. KOPF & K. LASSMANN 251 FAR-INFRAXED
PHOTOCONDUCTIVITY AND PHOTOLUMINESCENCE OF BERYLLIUM IN GALLIUM ARSENIDE
R. A. LEWIS, P. E. SIMMONDS, T. M. SILVER, T. S. CHENG, M. HENINI & J.
M. CHAMBERLAIN 257 SHIFT OF PHOTOLUMINESCENCE PEAK IN HIGHLY
SELF-COMPENSATED GE-DOPED GAAS T. WATANABE & M. SUEZAWA 263
ELECTRON-PHONON COUPLING IN A DELTA-DOPED N-I-P STRUCTURE IN GAAS J. C.
M. HENNING, F. P. J. DE GROOTE, W. C. VAN DER VLEUTEN & J. H. WOLTER 269
GROUP-ILL AND GROUP-II QUASI-DEEP IMPURITIES IN SILICON CARBIDE:
ELECTRON PARAMAGNETIC RESONANCE AND OPTICALLY DETECTED MAGNETIC
RESONANCE STUDIES P. G. BARANOV 273 RESONANCE ACCEPTOR STATES IN
UNIAXIALLY STRAINED SEMICONDUCTORS M. A. ODNOBLYUDOV, A. A. PAKHOMOV, V.
M. CHISTYAKOV & I. N. YASSIEVICH 279 DONOR-RELATED INFRARED-ABSORPTION
SPECTRA OF GAAS-(GA, AL)AS QUANTUM WELLS L. E. OLIVEIRA, SABIN DEL VALLE
& M. DE DIOS LEYVA 285 ELECTRICAL PROPERTIES OF SHALLOW DONOR CENTERS
FORMED DUE TO OXYGEN INTERACTION WITH CHEMICALLY ACTIVE IMPURITIES IN
HEAT-TREATED SILICON TV. A. SOBOLEV, V. V. EMTSEV, D. S. POLOSKIN & E.
I. SHEK 291 FINE STRUCTURE AND HIGHER LYING TRANSITIONS OF ER 3+ IN 4H
AND 6HSIC W. J. CHOYKE, R. P. DEVATY, M. YOGANATHAN, G. PENSL & J. A.
EDMOND 297 MECHANISM FOR THE ENHANCED DISSOCIATION OF C-H COMPLEXES IN
GAAS S. J. BREUER, R. JONES, P. R. BRIDDON & S. OBERG 303 BISTABILITY
AND METASTABILITY OF HYDROGEN IN SI 5. ZH. TOKMOLDIN & B. N. MUKASHEV
309 EPR OF ALUMINUM-ALUMINUM INTERSTITIAL PAIR IN SILICON YU. V.
GORELKINSKII, KH. A. ABDULLIN & B. N. MUKASHEV 315 MAGNETIC ORDER OF
SHALLOW ACCEPTOR CENTRES IN SEMICONDUCTORS (INSB:MN) 5. A. OBUKHOV 321
LUMINESCENCE AND DLTS STUDY OF PHOTONUCLEAR TRANSMUTATION DOPED (PND)
GALLIUM ARSENIDE N. I. AKULOVICH, V. A. BYKOVSKY, A. I. DEMCHENKO, V. I.
KARAS, V. F. SHOH, F. P. KORSHUNOV, V. I. MUHIN & V. V. PETRENKO 327
PHOTOLUMINESCENCE OF DEFORMED BULK CRYSTALS OF SI-GE ALLOY K. TANAKA &
M. SUEZAWA 333 DI-OXYGEN COMPLEX IN SILICON: SOME NEW CHARACTERISTIC
FEATURES L. I. MURIN & V. P. MARKEVICH 339 REACTIONS OF INTERSTITIAL
IRON WITH SHALLOW ACCEPTORS IN SILICON A. A. EZHEVSKII & C. A. J.
AMMERLAAN 345 THE 819.8 MEV PHOTOLUMINESCENCE BAND IN COPPER DOPED
SILICON A. J. DUARTE & M. H. NAZARE 35 1 ZEEMAN SPECTROSCOPY OF
ALUMINIUM IN GERMANIUM R. J. BAKER, P. FISHER, R. E. M. VICKERS, E. E.
HALLER & W. L. HANSEN 357 MICROSCOPIC STUDIES OF THE HYDROGEN
PASSIVATION IN N-TYPE SILICON: A NEW APPLICATION OF THE 73 AS 7-E~PAC
TECHNIQUE J. G. CORREIA, J. G. MARQUES, A. BURCHARD, M. DEICHER, R.
MAGERLE, D. FORKEL-WIRTH AND THE ISOLDE COLLABORATION 363 SHALLOW DONOR
SOLUBILITY MECHANISM: TELLURIUM IN GAAS T. STUPIIISKI, E.
ZIELIIISKA-ROHOZIRISKA & T. HARASIMOWICZ 369 ENERGY LEVELS OF SHALLOW
DONOR PAIRS AND THERMAL DOUBLE DONORS IN SILICON L. F. MAKARENKO 375
BORON NEUTRALIZATION BY HYDROGEN IN EPITAXIAL SI FILMS GROWN AT VERY LOW
TEMPERATURE ( 200C) K. ABE, A. YAMADA & M. KONAGAI 381 AN
OXYGEN-RELATED 1-PLATINUM SHALLOW-LEVEL CENTER IN N- AND P-TYPE SILICON
U. JUDA, M. HOHNE & O. SCHEERER 387 EXCITONIC ENHANCED OPTICAL GAIN FOR
WIDE-GAP LASER DIODES USING IMPURITY STATES T. UENOYAMA 393 MULTISTEP
CHANGES OF DEFECT ELECTRICAL ACTIVITY DUE TO INTERACTION WITH HYDROGEN
N. A. YARYKIN, A. L. PARAKHONSKY & 0. V. FEKLISOVA 39 9 ANNEALING
BEHAVIOR OF CRYSTALLINE SILICON HEAVILY IMPLANTED WITH OXYGEN AT LOW
TEMPERATURE M. BERCU, I. S. ZEVENBERGEN, T. GREGORKIEWICZ, C. A. J.
AMMERLAAN, T. TATE & E. IVANOV 405 INTRACENTER POPULATION INVERSION OF
STRAIN-SPLIT ACCEPTOR LEVELS IN GE I. V. ALTUKHOV, E. G. CHIRKOVA, M. S.
KAGAN, K. A. KOROLEV, V. P. SINIS & I. N. YASSIEVICH 411 FIELD
IONIZATION OF SHALLOW IMPURITIES AT RANDOM POTENTIAL M. S. KAGAN, E. G.
LANDSBERG, V. V. PETRISHCHEV & N. G. ZHDANOVA 417 MAGNETOLUMINESCENCE
SPECTRA ASSOCIATED TO ACCEPTORS IN GAAS-(GA, AL)AS SUPERLATTICES A.
LATGE, N. PORRAS-MONTENEGRO, M. DE DIOS-LEYVA & L. E. OLIVEIRA 423
MAGNETIC-FIELD EFFECTS ON THE OPTICAL ABSORPTION SPECTRA ASSOCIATED WITH
SHALLOW IMPURITIES IN QUANTUM WELLS L. H. M. BARBOSA, A. LATGE, L. E.
OLIVEIRA & M. DE DIOS-LEYVA 429 XVII SHALLOW LEVEL EXCITATIONS OF
TRANSITION METAL AND RARE EARTH ELEMENT ISOELECTRONIC IMPURITIES IN
II-VI AND III-V SEMICONDUCTORS V. I. SOKOLOV 435 LOCAL STATES BAND
INDUCED BY B-DELTA DOPING IN SI/SIGE/SI QUANTUM WELLS /. N. YASSIEVICH,
K. SCHMALZ, K. L. WANG & S. G. THOMAS 44 1 SELFINTERSTITIAL AND
SELFINTERSTITIAL-RELATED DEFECTS IN IRRADIATED P-TYPE SILICON B. N.
MUKASHEV, KH. A. ABDULLIN & YU. V. GORELKINSKII 447 LUMINESCENCE OF
EXCITONS BOUND TO COMPLEXES OF IMPURITIES AND DEFECTS IN IRRADIATED
GERMANIUM V. A. BYKOVSKY, V. I. HITKO, N. I. DOLGIKH, V. V. EMTSEV & E.
E. HALLER 453 ON THE ROLE OF CLOSELY PLACED EXCITED STATES IN THE
ANOMALOUS BEHAVIOUR OF THE SPIN SYSTEM FE 3+ IN GAAS A. A. EZHEVSKII AND
C. A. J. AMMERLAAN 459 OPTICAL STUDIES OF BE ACCEPTORS CONFINED IN FLAT
ISLANDS AT GAAS/GAALAS QUANTUM-WELL INTERFACES J. B. B. DE OLIVEIRA, E.
A. MENESES & E. C. F. DA SILVA 465 AB INITIO STUDY OF GROUP V ELEMENTS
IN AMORPHOUS SILICON P. P. M. VENEZUELA & A. FAZZIO 471 INFLUENCE OF
INTRINSIC DEFECTS AND S SUBSTITUTIONS ON ELECTRICAL PROPERTIES OF
CHALCOPYRITE CUINS 2 COMPOUNDS T. YAMAMOTO & H. KATAYAMA- YOSHIDA 477
PIEZOSPECTROSCOPY OF ANTIMONY IN GERMANIUM R. J. BAKER, P. FISHER & R.
E. M. VICKERS 483 IMPURITY CENTRE IN A SINGLE QUANTUM WELL IN THE
PRESENCE OF A STRONG MAGNETIC FIELD B. S. MONOZON, C. A. BATES, J. L.
DUNN & M. J. PYE 489 ELECTRON PARAMAGNETIC RESONANCE STUDY OF A HIGH
CONCENTRATION SHALLOW LEVEL PT DEFECT IN SILICON WITH EFFECTIVE MASS
LIKE PROPERTIES O. SCHEERER, M. HOHNE & U. JUDA 495 THEORY OF HYDROGEN
SINGLE PASSIVATED SUBSTITUTIONAL SULPHUR DOUBLE DONOR IN SI V. J. B.
TORRES, S. OBERG & R. JONES 501 DIFFUSION OF CADMIUM INTO GALLIUM
ARSENIDE INVESTIGATED BY MEANS OF SIMS AND SPREADING-RESISTANCE
PROFILING G. BOSKER, N. A. STOLWIJK, H. MEHRER & U. SODERVALL 505 SIZE
EFFECT OF SHALLOW ACCEPTOR IMPURITIES ON FORMATION PROCESS OF
IRON-ACCEPTOR PAIRS IN SILICON H. TAKAHASHI, M. SUEZAWA & K. SUMINO 511
HYDROGEN PASSIVATION OF MULTICRYSTALLINE SILICON SOLAR CELLS BY PLASMA
DEPOSITION OF SILICON NITRIDE E. M. SATO, M. A. G. SOLER & J. R. LEITE
517 THE INTERACTION BETWEEN BORON ACCEPTORS IN SILICON AND CARBON AND
SELF-INTERSTITIALS A. MAINWOOD 523 EXCITONS BOUND AT ACCEPTOR COMPLEXES
IN P-TYPE GAAS/ALGAAS QUANTUM WELLS A. C. FERREIRA, P. O. HOLTZ, B.
MONEMAR, M. SUNDARAM, J. L. MERZ & A. C. GOSSARD 529
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| author_corporate | International Conference on Shallow Level Centers in Semiconductors Amsterdam |
| author_corporate_role | aut |
| author_facet | International Conference on Shallow Level Centers in Semiconductors Amsterdam |
| author_sort | International Conference on Shallow Level Centers in Semiconductors Amsterdam |
| building | Verbundindex |
| bvnumber | BV011543040 |
| callnumber-first | Q - Science |
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| callnumber-sort | QC 3611.6 D4 |
| callnumber-subject | QC - Physics |
| classification_rvk | UP 3000 |
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| dewey-full | 621.38152 |
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| dewey-search | 621.38152 |
| dewey-sort | 3621.38152 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Conference Proceeding Book |
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| genre | (DE-588)1071861417 Konferenzschrift 1996 Amsterdam gnd-content |
| genre_facet | Konferenzschrift 1996 Amsterdam |
| id | DE-604.BV011543040 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:11:32Z |
| institution | BVB |
| institution_GND | (DE-588)1601864-3 |
| isbn | 9810229283 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007770652 |
| oclc_num | 37736620 |
| open_access_boolean | |
| owner | DE-355 DE-BY-UBR |
| owner_facet | DE-355 DE-BY-UBR |
| physical | XVIII, 534 S. graph. Darst. |
| publishDate | 1997 |
| publishDateSearch | 1997 |
| publishDateSort | 1997 |
| publisher | World Scientific |
| record_format | marc |
| spelling | International Conference on Shallow Level Centers in Semiconductors 7 1996 Amsterdam Verfasser (DE-588)1601864-3 aut 7th International Conference on Shallow-Level Centers in Semiconductors Amsterdam, The Netherlands, 17 - 19 July 1996 ed. C. A. J. Ammerlaan ... Shallow-Level centers in semiconductors Singapore [u.a.] World Scientific 1997 XVIII, 534 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Halfgeleiders gtt Roosterfouten gtt Impurity centers Congresses Semiconductors Defects Congresses Semiconductors Impurity distribution Congresses Dotierter Halbleiter (DE-588)4150492-6 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1996 Amsterdam gnd-content Dotierter Halbleiter (DE-588)4150492-6 s DE-604 Ammerlaan, C. A. J. Sonstige oth GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007770652&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | 7th International Conference on Shallow-Level Centers in Semiconductors Amsterdam, The Netherlands, 17 - 19 July 1996 Halfgeleiders gtt Roosterfouten gtt Impurity centers Congresses Semiconductors Defects Congresses Semiconductors Impurity distribution Congresses Dotierter Halbleiter (DE-588)4150492-6 gnd |
| subject_GND | (DE-588)4150492-6 (DE-588)1071861417 |
| title | 7th International Conference on Shallow-Level Centers in Semiconductors Amsterdam, The Netherlands, 17 - 19 July 1996 |
| title_alt | Shallow-Level centers in semiconductors |
| title_auth | 7th International Conference on Shallow-Level Centers in Semiconductors Amsterdam, The Netherlands, 17 - 19 July 1996 |
| title_exact_search | 7th International Conference on Shallow-Level Centers in Semiconductors Amsterdam, The Netherlands, 17 - 19 July 1996 |
| title_full | 7th International Conference on Shallow-Level Centers in Semiconductors Amsterdam, The Netherlands, 17 - 19 July 1996 ed. C. A. J. Ammerlaan ... |
| title_fullStr | 7th International Conference on Shallow-Level Centers in Semiconductors Amsterdam, The Netherlands, 17 - 19 July 1996 ed. C. A. J. Ammerlaan ... |
| title_full_unstemmed | 7th International Conference on Shallow-Level Centers in Semiconductors Amsterdam, The Netherlands, 17 - 19 July 1996 ed. C. A. J. Ammerlaan ... |
| title_short | 7th International Conference on Shallow-Level Centers in Semiconductors |
| title_sort | 7th international conference on shallow level centers in semiconductors amsterdam the netherlands 17 19 july 1996 |
| title_sub | Amsterdam, The Netherlands, 17 - 19 July 1996 |
| topic | Halfgeleiders gtt Roosterfouten gtt Impurity centers Congresses Semiconductors Defects Congresses Semiconductors Impurity distribution Congresses Dotierter Halbleiter (DE-588)4150492-6 gnd |
| topic_facet | Halfgeleiders Roosterfouten Impurity centers Congresses Semiconductors Defects Congresses Semiconductors Impurity distribution Congresses Dotierter Halbleiter Konferenzschrift 1996 Amsterdam |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007770652&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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