Principles and analysis of AlGaAs-GaAs heterojunction bipolar transistors
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| 1. Verfasser: | |
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| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Boston [u.a.]
Artech House
1996
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| Schriftenreihe: | The Artech House solid state technology and devices library
|
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MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV011085872 | ||
| 003 | DE-604 | ||
| 005 | 20010402 | ||
| 007 | t | ||
| 008 | 961128s1996 d||| |||| 00||| eng d | ||
| 020 | |a 089006587X |9 0-89006-587-X | ||
| 035 | |a (OCoLC)34046345 | ||
| 035 | |a (DE-599)BVBBV011085872 | ||
| 040 | |a DE-604 |b ger |e rakwb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91 |a DE-29T |a DE-83 |a DE-11 | ||
| 050 | 0 | |a TK7871.96.B55 | |
| 082 | 0 | |a 621.3815/282 |2 20 | |
| 084 | |a UX 2150 |0 (DE-625)146948: |2 rvk | ||
| 084 | |a ZN 4850 |0 (DE-625)157413: |2 rvk | ||
| 084 | |a ELT 280f |2 stub | ||
| 084 | |a ELT 315f |2 stub | ||
| 100 | 1 | |a Liou, Juin J. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Principles and analysis of AlGaAs-GaAs heterojunction bipolar transistors |c Juin J. Liou |
| 264 | 1 | |a Boston [u.a.] |b Artech House |c 1996 | |
| 300 | |a XI, 227 S. |b zahlr. graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a The Artech House solid state technology and devices library | |
| 650 | 7 | |a Semiconducteurs - Jonctions |2 ram | |
| 650 | 7 | |a Semiconducteurs à l'arséniure de gallium |2 ram | |
| 650 | 4 | |a Bipolar transistors | |
| 650 | 4 | |a Gallium arsenide semiconductors | |
| 650 | 4 | |a Semiconductors |x Junctions | |
| 650 | 0 | 7 | |a Heteroübergang |0 (DE-588)4127243-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Bipolartransistor |0 (DE-588)4145669-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Aluminiumarsenid |0 (DE-588)4324566-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Galliumarsenid |0 (DE-588)4019155-2 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Bipolartransistor |0 (DE-588)4145669-5 |D s |
| 689 | 0 | 1 | |a Galliumarsenid |0 (DE-588)4019155-2 |D s |
| 689 | 0 | 2 | |a Aluminiumarsenid |0 (DE-588)4324566-3 |D s |
| 689 | 0 | 3 | |a Heteroübergang |0 (DE-588)4127243-2 |D s |
| 689 | 0 | |5 DE-604 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-007425679 | ||
Datensatz im Suchindex
| DE-BY-TUM_call_number | 0001/96 A 3069 |
|---|---|
| DE-BY-TUM_katkey | 777656 |
| DE-BY-TUM_media_number | 040001110741 |
| _version_ | 1816711751598604288 |
| any_adam_object | |
| author | Liou, Juin J. |
| author_facet | Liou, Juin J. |
| author_role | aut |
| author_sort | Liou, Juin J. |
| author_variant | j j l jj jjl |
| building | Verbundindex |
| bvnumber | BV011085872 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.96.B55 |
| callnumber-search | TK7871.96.B55 |
| callnumber-sort | TK 47871.96 B55 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | UX 2150 ZN 4850 |
| classification_tum | ELT 280f ELT 315f |
| ctrlnum | (OCoLC)34046345 (DE-599)BVBBV011085872 |
| dewey-full | 621.3815/282 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/282 |
| dewey-search | 621.3815/282 |
| dewey-sort | 3621.3815 3282 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01813nam a2200505 c 4500</leader><controlfield tag="001">BV011085872</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20010402 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">961128s1996 d||| |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">089006587X</subfield><subfield code="9">0-89006-587-X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)34046345</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV011085872</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-29T</subfield><subfield code="a">DE-83</subfield><subfield code="a">DE-11</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871.96.B55</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/282</subfield><subfield code="2">20</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UX 2150</subfield><subfield code="0">(DE-625)146948:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 4850</subfield><subfield code="0">(DE-625)157413:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 280f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 315f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Liou, Juin J.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Principles and analysis of AlGaAs-GaAs heterojunction bipolar transistors</subfield><subfield code="c">Juin J. Liou</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Boston [u.a.]</subfield><subfield code="b">Artech House</subfield><subfield code="c">1996</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XI, 227 S.</subfield><subfield code="b">zahlr. graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">The Artech House solid state technology and devices library</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconducteurs - Jonctions</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconducteurs à l'arséniure de gallium</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Bipolar transistors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Gallium arsenide semiconductors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="x">Junctions</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Heteroübergang</subfield><subfield code="0">(DE-588)4127243-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Bipolartransistor</subfield><subfield code="0">(DE-588)4145669-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Aluminiumarsenid</subfield><subfield code="0">(DE-588)4324566-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Galliumarsenid</subfield><subfield code="0">(DE-588)4019155-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Bipolartransistor</subfield><subfield code="0">(DE-588)4145669-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Galliumarsenid</subfield><subfield code="0">(DE-588)4019155-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Aluminiumarsenid</subfield><subfield code="0">(DE-588)4324566-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Heteroübergang</subfield><subfield code="0">(DE-588)4127243-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-007425679</subfield></datafield></record></collection> |
| id | DE-604.BV011085872 |
| illustrated | Illustrated |
| indexdate | 2024-11-25T17:14:19Z |
| institution | BVB |
| isbn | 089006587X |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007425679 |
| oclc_num | 34046345 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-29T DE-83 DE-11 |
| owner_facet | DE-91 DE-BY-TUM DE-29T DE-83 DE-11 |
| physical | XI, 227 S. zahlr. graph. Darst. |
| publishDate | 1996 |
| publishDateSearch | 1996 |
| publishDateSort | 1996 |
| publisher | Artech House |
| record_format | marc |
| series2 | The Artech House solid state technology and devices library |
| spellingShingle | Liou, Juin J. Principles and analysis of AlGaAs-GaAs heterojunction bipolar transistors Semiconducteurs - Jonctions ram Semiconducteurs à l'arséniure de gallium ram Bipolar transistors Gallium arsenide semiconductors Semiconductors Junctions Heteroübergang (DE-588)4127243-2 gnd Bipolartransistor (DE-588)4145669-5 gnd Aluminiumarsenid (DE-588)4324566-3 gnd Galliumarsenid (DE-588)4019155-2 gnd |
| subject_GND | (DE-588)4127243-2 (DE-588)4145669-5 (DE-588)4324566-3 (DE-588)4019155-2 |
| title | Principles and analysis of AlGaAs-GaAs heterojunction bipolar transistors |
| title_auth | Principles and analysis of AlGaAs-GaAs heterojunction bipolar transistors |
| title_exact_search | Principles and analysis of AlGaAs-GaAs heterojunction bipolar transistors |
| title_full | Principles and analysis of AlGaAs-GaAs heterojunction bipolar transistors Juin J. Liou |
| title_fullStr | Principles and analysis of AlGaAs-GaAs heterojunction bipolar transistors Juin J. Liou |
| title_full_unstemmed | Principles and analysis of AlGaAs-GaAs heterojunction bipolar transistors Juin J. Liou |
| title_short | Principles and analysis of AlGaAs-GaAs heterojunction bipolar transistors |
| title_sort | principles and analysis of algaas gaas heterojunction bipolar transistors |
| topic | Semiconducteurs - Jonctions ram Semiconducteurs à l'arséniure de gallium ram Bipolar transistors Gallium arsenide semiconductors Semiconductors Junctions Heteroübergang (DE-588)4127243-2 gnd Bipolartransistor (DE-588)4145669-5 gnd Aluminiumarsenid (DE-588)4324566-3 gnd Galliumarsenid (DE-588)4019155-2 gnd |
| topic_facet | Semiconducteurs - Jonctions Semiconducteurs à l'arséniure de gallium Bipolar transistors Gallium arsenide semiconductors Semiconductors Junctions Heteroübergang Bipolartransistor Aluminiumarsenid Galliumarsenid |
| work_keys_str_mv | AT lioujuinj principlesandanalysisofalgaasgaasheterojunctionbipolartransistors |