Semiconductor characterization present status and future needs

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adam_text SEMICONDUCTOR CHARACTERIZATION PRESENT STATUS AND FUTURE NEEDS EDITORS W. M. BULLIS MATERIALS & METROLOGY, SUNNYVALE, CA 94087 D. G. SEILER NIST, GAITHERSBURG, MD 20899 A. C. DIEBOLD SEMATECH, AUSTIN, TX 78741 AIP PRESS AMERICAN INSTITUTE OF PHYSICS WOODBURY, NEW YORK CONTENTS FOREWORD V PREFACE XVII ACKNOWLEDGEMENTS XIX BUSINESS AND MANUFACTURING MOTIVATIONS FOR THE DEVELOPMENT OF ANALYTICAL TECHNOLOGY AND METROLOGY FOR SEMICONDUCTORS 1 T. J. SHAFFNER, *. * DIEBOLD, R. * MCDONALD, D. G. SEILER, AND W. M. BULLIS DRIVERS FOR SILICON PROCESS DEVELOPMENT AND MANUFACTURING PHYSICAL LIMITS ON GIGASCALE INTEGRATION (GSI) 13 JAMES D. MEINDL CIRCUITS, TRANSISTORS, PROCESSING, AND MATERIALS FOR 0.1 -MICRON CMOS TECHNOLOGY 19 Y.G. WEY, J. WEIS, *. F. LEE, D. MONROE, F. H. BAUMANN, E. H. WESTERWICK, AND R. H. YAN METROLOGY REQUIREMENTS FOR BEYOND 0.35-** GEOMETRIES CRITICAL METROLOGY AND ANALYTICAL TECHNOLOGY BASED ON THE PROCESS AND MATERIALS REQUIREMENTS OF THE 1994 NATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS 25 ALAIN * DIEBOLD COST BENEFIT OF PROCESS METROLOGY 42 DON ROSE FLEXIBLE MANUFACTURING/CLUSTER TOOLS FOR SEMICONDUCTOR MANUFACTURING 46 ZACHARY J. LEMNIOS IN-SITU SENSORS FOR MONITORING & CONTROL OF PROCESSES & PRODUCT PARAMETERS 52 JIMMY W. HOSCH COST OF OWNERSHIP ANALYSIS FOR METROLOGY TOOLS 61 DAREN L. DANCE VII SILICON WAFERS, GATE DIELECTRICS, AND PROCESS SIMULATION SILICON MATERIALS AND METROLOGY: CRITICAL CONCEPTS FOR OPTIMAL 1* PERFORMANCE IN THE GIGABIT ERA 67 HOWARD R. HUFF AND RANDAL K. GOODALL MICRODEFECT ANALYSIS OF SILICON: TOOLS AND STRATEGIES 97 LIONEL * KIMERLING, JUERGEN MICHEL, H. M SAAD, AND GERD J. NORGA DEFECT ENGINEERING DIAGNOSTIC OPTIONS FOR SOI, MEV IMPLANTS, AND 300 MM WAFERS 103 GEORGE A. ROZGONYI SILICON SURFACE PREPARATION AND WAFER CLEANING: ROLE, STATUS, AND NEEDS FOR ADVANCED CHARACTERIZATION 110 * R. HELMS SPECIFICATION OF LIQUID CHEMICAL PURITY REQUIREMENTS: THE BCNOWNS, UNKNOWNS, AND NEED FOR TECHNOLOGY DEVELOPMENT 118 H. G PARKS GATE DIELECTRICS FOR HIGH PERFORMANCE ULSI: PRACTICAL AND FUNDAMENTAL LIMITS 123 L. MANCHANDA TCAD STATUS AND FUTURE PROSPECTS 131 DONALD L. SCHARFETTER COMPUTATIONAL PHYSICS FOR MICROELECTRONICS * THE OLD AND THE NEW CHALLENGES 141 SOKRATES T. PANTELIDES INTERCONNECTS AND FAILURE ANALYSIS INTERCONNECTS AND CONTACTS: ISSUES AND STRATEGIES 153 ROBERT S. BLEWER INTERCONNECT RELIABILITY AND STRESS 164 WALTER L. BROWN BACK-END SIMULATION: ETCHING AND DEPOSITION 173 F. H. BAUMANN METROLOGY AND PROCESS CONTROL ISSUES IN CHEMICAL MECHANICAL POLISHING 181 RAHUL JAIRATH AND LUCIA MARKERT FAILURE ANALYSIS: STATUS AND FUTURE TRENDS 187 RICHARD E. ANDERSON, JERRY M. SODEN, AND CHRISTOPHER L. HENDERSON VIII CMOS 1* LAYERS: COMPLETE SET OF THERMAL CONDUCTIVITIES 197 0. PAUL, M. VON ARX, AND H. BALTES THE IMPACT OF ACOUSTIC MICROSCOPY ON THE DEVELOPMENT OF ADVANCED 1* PACKAGES 202 *. *. MOORE CRITICAL ANALYTICAL METHODS ELECTRICAL METHODS ELECTRICAL CHARACTERIZATION OF MATERIALS AND DEVICES 215 DIETER K. SCHRODER LIFETIME MEASUREMENTS FOR ROUTINE QC/QA OF SOI WAFERS 227 J. L. FREEOUF AND N. BRASLAU APPLICATION OF THE SURFACE PHOTO VOLTAGE AND CONTACT POTENTIAL DIFFERENCE FOR IN-LINE MONITORING OF 1* PROCESSES 231 K. NAUKA IMPROVEMENT OF ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY FOR DEEP LEVEL MEASUREMENT INCLUDING INTERFACE TRAP 237 H. YOSHIDA, H. NIU, T. MATSUDA, AND S. KISHINO CONTAMINATION FREE MANUFACTURING OPTIMIZATION OF WAFER SURFACE PARTICLE POSITION MAP PRIOR TO VIEWING WITH AN ELECTRON MICROSCOPE 243 MAN PING CAI, YURI URITSKY, AND PATRICK D. KINNEY EVALUATING AUTOMATED WAFER MEASUREMENT INSTRUMENTS 248 STEVEN A. EASTMAN GAS CONTAMINATION MONITORING FOR SEMICONDUCTOR PROCESSING 252 CHARLES R. TILFORD LIQUID-BOME SUB-MICRON PARTICLE DETECTION THROUGH ACOUSTIC COAXING 256 SAMEER I. MADANSHETTY X-RAY METHODS X-RAY SCATTERING FOR SEMICONDUCTOR CHARACTERIZATION B. K. TANNER 263 SILICON WAFER SURFACE TRACE IMPURITY ANALYSIS USING SYNCHROTRON RADIATION 273 S. S. LADERMAN, A. FISCHER-COLBRIE, A. SHIMAZAKI, K. MIYAZAKI, S. BRENNAN, N. TAKAURA, P. PIANETTA, AND J. KORTRIGHT IX CHARACTERIZATION OF DEFECTS IN SILICON CARBIDE SINGLE CRYSTALS BY SYNCHROTRON X-RAY TOPOGRAPHY 278 SHAOPING WANG, MICHAEL DUDLEY, WEI HUANG, CALVIN H. CARTER, JR., VALERI F. TSVETKOV, AND * FAZI DEPTH-DEPENDENT NON-DESTRUCTIVE ANALYSIS OF THE OXIDE SURFACE OF INP(LOO) USING GRAZING INCIDENCE X-RAY PHOTOEMISSION 283 TERRENCE JACH, STEPHEN THURGATE, AND TERENCEO LACUESTA CALIBRATION OF BINDING-ENERGY SCALES OF X-RAY PHOTOELECTRON SPECTROMETERS 287 * J. POWELL SCANNING PROBE MICROSCOPIES SEMICONDUCTOR CHARACTERIZATION WITH SCANNING PROBE MICROSCOPIES 295 R. M. FEENSTRA AND J. E. GRIFFITH SCANNING CAPACITANCE MICROSCOPY MEASUREMENTS AND MODELING FOR DOPANT PROFILING OF SILICON 308 JOSEPH J. KOPANSKI, JAY F. MARCHIANDO, AND JEREMIAH R. LOWNEY PROGRESS TOWARD ACCURATE METROLOGY USING ATOMIC FORCE MICROSCOPY 313 T. MCWAID, J. SCHNEIR, J. S. VILLARRUBIA, R. DIXSON, AND V. W. TSAI 2D-SCANNING CAPACITANCE MICROSCOPY MEASUREMENTS OF CROSS-SECTIONED VLSI TESTSTRUCTURES 318 GABI NEUBAUER, ANDREW ERICKSON, CLAYTON * WILLIAMS, JOSEPH J. KOPANSKI, MARK RODGERS, AND DENNIS ADDERTON CARRIER PROFILE DETERMINATION IN DEVICE STRUCTURES USING AFM-BASED METHODS 322 W. VANDERVORST, P. DE WOLF, T. CLARYSSE, T. TRENKLER, L. HELLEMANS, J. SNAUWAERT, AND V. RAINERI NUCLEAR METHODS NEUTRON ACTIVATION FOR SEMICONDUCTOR MATERIALS CHARACTERIZATION 329 S. * MCGUIRE, T. Z. HOSSAIN, ALBERT J. FILO, CRAIG * SWANSON, AND JAMES P. LAVINE INTERNATIONAL INTERCOMPARISON FOR TRACE ELEMENTS IN SILICON SEMICONDUCTOR WAFERS BY NEUTRON ACTIVATION ANALYSIS 335 D. A. BECKER, R. M. LINDSTROM, AND T. Z. HOSSAIN APPLICATIONS OF COLD NEUTRON PROMPT GAMMA ACTIVATION ANALYSIS TO CHARACTERIZATION OF SEMICONDUCTORS 342 RICK L. PAUL AND RICHARD M. LINDSTROM NONDESTRUCTIVE CHARACTERIZATION OF SEMICONDUCTOR MATERIALS USING NEUTRON DEPTH PROFILING 346 R. G. DOWNING AND G. P. LAMAZE X BORON ANALYSIS IN SYNTHETIC DIAMOND FILMS USING COLD NEUTRON DEPTH PROFILING 351 G. P. LAMAZE AND R. G. DOWNING ELECTRON AND ION BEAM TECHNIQUES (INCLUDING SIMS) TRANSMISSION ELECTRON MICROSCOPY IN VLSI: STRENGTHS AND LIMITATIONS 359 YOUNG O. KIM ION BEAM CHARACTERIZATION OF SEMICONDUCTORS 366 J. MARK ANTHONY TRACE NANOANALYSIS BY ANALYTICAL ELECTRON MICROSCOPY/ELECTRON ENERGY LOSS SPECTROMETRY: ACHIEVING HIGH SPATIAL RESOLUTION AND HIGH SENSITIVITY ANALYSIS 377 DALE E. NEWBURY THE DEVELOPMENT OF STANDARD REFERENCE MATERIAL 2137 - A BORON IMPLANT IN SILICON STANDARD FOR SECONDARY ION MASS SPECTROMETRY 382 D. S. SIMONS, P. H. CHI, R. G. DOWNING, AND G. F. LAMAZE QUANTITATIVE 3-DIMENSIONAL IMAGE DEPTH PROFILING BY SECONDARY ION MASS SPECTROMETRY 383 GREG GILLEN NEW APPLICATIONS OF QUADRUPOLE-BASED SECONDARY ION MASS SPECTROMETRY (SIMS) IN MICROELECTRONICS 387 STEPHEN W. NOVAK, MICHAEL R. FROST, AND CHARLES W. MAGEE THE DEPTH MEASUREMENT OF CRATERS PRODUCED BY SECONDARY ION MASS SPECTROMETRY - RESULTS OF A STYLUS PROFILOMETRY ROUND-ROBIN STUDY 392 DAVID S. SIMONS OPTICAL AND INFRARED TECHNIQUES APPLICATIONS OF NEAR-FIELD SCANNING OPTICAL MICROSCOPY 395 HARALD F. HESS AND ERIC BETZIG SCATTEROMETRY: PRINCIPLES, APPLICATIONS, LIMITATIONS, AND FUTURE PROSPECTS 399 JOHN * STOVER SPECTRORADIOMETERS FOR DEEP ULTRAVIOLET LITHOGRAPHY 413 J. M. BRIDGES, J. E. HARDIS, * L. CROMER, AND J. R. ROBERTS INFRARED MICROSPECTROSCOPY OF SEMICONDUCTORS AT THE DIFFRACTION-LIMIT 418 G. L. CARR, D. DIMARZIO, M. B. LEE, AND D. J. LARSON, JR. OPTICAL CHARACTERIZATION OF MATERIALS AND DEVICES FOR THE SEMICONDUCTOR INDUSTRY: TRENDS AND NEEDS 422 S. PERKOWITZ, D. G. SEILER, AND W. M. BULLIS XI CHARACTERIZATION OF SIGE/GE HETEROSTRUCTURES AND GRADED LAYERS USING VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY 428 A. R. HEYD, S. A. ALTEROVITZ, E. T. CROKE, K. L. WANG, AND *. *. LEE ELLIPSOMETRIC CHARACTERIZATION OF THIN OXIDES ON SILICON 433 WILLIAM A. MCGAHAN AND JOHN A. WOOLLAM HIGH-ACCURACY PRINCIPAL-ANGLE SCANNING SPECTROSCOPIC ELLIPSOMETRY OF SEMICONDUCTOR INTERFACES 438 N. V. NGUYEN, D. CHANDLER-HOROWITZ, J. G. PELLEGRINO, AND P. M. AMIRTHARAJ CHEMICAL METHODS APPLICATION OF ICP-MS FOR RELATING METAL CONTAMINATION ON WAFERS TO METAL SOURCES AND LEVELS 445 MARJORIE K. BALAZS AND JAENOS FUCSKO ULTRA-SENSITIVE METHODS FOR MICROCONTAMINATION ANALYSIS IN SEMICONDUCTOR PROCESS LIQUIDS AND ON SURFACES 450 P. GUPTA, Z. POURMOTAMED, S. H. TAN, AND R. MCDONALD IN SITU, REAL TIME DIAGNOSIS, ANALYSIS, AND CONTROL IN-SITU PROCESS CONTROL FOR SEMICONDUCTOR TECHNOLOGY: A CONTRAST BETWEEN RESEARCH AND FACTORY PERSPECTIVES, OR OBSERVATIONS OF RESEARCHER WHO HAS SEEN THE LIGHT... AT DAWN ... DRIVING THE INTERSTATE TO AN OUT-OF-STATE FACTORY (PLENARY LECTURE) 459 JOHN * BEAN REAL-TIME SPECTRAL ELLIPSOMETRY APPLIED TO SEMICONDUCTOR THIN FILM DIAGNOSTICS 467 W. M. DUNCAN, M. J. BEVAN, AND S. A. HENCK REAL TIME ANALYSIS AND CONTROL OF EPITAXIAL GROWTH 476 GEORGE N. MARACAS AND *. *. KUO COST EFFECTIVENESS IN REAL-TIME, IN-SITU ANALYSIS FOR DEPOSITION EQUIPMENT 485 NORMAN E. SCHUMAKER METROLOGY, SENSORS, AND PROCESS CONTROL: APPLICATION TO REACTIVE ION ETCH 491 ANION MAX HURWITZ AND JAMES R. MOYNE (EDS) IMPROVED GAS FLOW MEASUREMENTS FOR NEXT-GENERATION PROCESSES 497 STUART A. TISON APPLICATION OF THE RAMAN MICROPROBE TO IDENTIFICATION OF ORGANIC CONTAMINANTS AND TO IN-SITU MEASURE OF STRESSES 502 FRAN ADAR AND HOWARD SCHAFFER REAL-TIME MONITORING AND CONTROL OF RESONANT-TUNNELING DIODE GROWTH USING SPECTROSCOPIC ELLIPSOMETRY 507 F. G. CELII, Y.-C. KAO, T. S. MOISE, A. J. KATZ, T. B. HARTON, M. WOOLSEY, AND B. JOHS XII ENERGY DISPERSIVE X-RAY REFLECTIVITY CHARACTERIZATION OF SEMICONDUCTOR HETEROSTRUCTURES AND INTERFACES 512 E. CHASON, T. M. MAYER, Z. MATUTINOVIC KRSTELJ, AND J. * STURM REAL TIME SPECTROELLIPSOMETRY CHARACTERIZATION OF THE FABRICATION OF AMORPHOUS SILICON SOLAR CELLS 517 R. W. COLLINS, YIWEI LU, SANGBO KIM, AND * R. WRONSKI PERFORMANCE CAPABILITIES OF REFLECTOMETERS AND ELLIPSOMETERS FOR COMPOSITIONAL ANALYSIS DURING ALGA,_ X AS EPITAXY 522 W. GILMORE III, D. E. ASPNES, AND *. *. LEE IN SITU PYROMETRIC INTERFEROMETRY MONITORING AND CONTROL OF III-V LAYERED STRUCTURES DURING MBE GROWTH: MODELING AND IMPLEMENTATION 527 D. L. SATO, X. LIU, Y. LI, A. R. STUBBERUD, H. P. LEE, AND J. M. KUO IN-SITU MONITORING OF HETEROEPITAXIAL GROWTH PROCESSES USING REAL-TIME SPECTROSCOPIC ELLIPSOMETRY AND LASER LIGHT SCATTERING 532 * PICKERING, R. T. CARLINE, D. A. O. HOPE, AND D. J. ROBBINS REAL TIME DIAGNOSTICS OF SEMICONDUCTOR SURFACE MODIFICATIONS BY REFLECTANCE ANISOTROPY SPECTROSCOPY 537 J.-T. ZETTLER, W. RICHTER, *. PLOSKA, M. ZORN, J. RUMSBURG, *. MEYNE, AND M. PRISTOVSEK REAL-TIME MEASUREMENT OF FILM THICKNESS, COMPOSITION, AND TEMPERATURE BY FT-IR EMISSION AND REFLECTION SPECTROSCOPY 544 P. R. SOLOMON, SHAOHUA LIU, PETER A. ROSENTHAL, AND STUART FARQUHARSON IN-SITU NEUTRON REFLECTIVITY OF MBE GROWN AND CHEMICALLY PROCESSED SURFACES AND INTERFACES 549 J. A. DURA AND * F. MAJKRZAK FRONTIERS IN COMPOUND SEMICONDUCTORS FRONTIERS IN COMPOUND SEMICONDUCTORS: BANDGAP ENGINEERING AND NOVEL STRUCTURES 557 *. * MCGILL, D. A. COLLINS, M. W. WANG, J. F. SWENBERG, AND R. W. GRANT MEASUREMENT NEEDS AND CRITICAL DRIVERS FOR FUTURE HIGH-SPEED DEVICES 566 HERB GORONKIN AND J. R. TUCKER ROLE OF DIAGNOSTICS, CHARACTERIZATION, AND MODELING IN IR DETECTOR TECHNOLOGY DEVELOPMENT: HGCDTE - A PARADIGM 572 W. E. TENNANT CRITICAL MATERIALS ISSUES FOR PERFORMANCE IMPROVEMENT OF GAAS-BASED ANALOG DEVICES 578 JAMES M. BALLINGALL MAGNETOLUMINESCENCE CHARACTERIZATION OF QUANTUM WELL STRUCTURES 591 E. D. JONES AND S. R. KURTZ XIII GAAS/SI OPTOELECTRONIC DESIGN AND DEVELOPMENT AT HIROSHIMA UNIVERSITY 599 S. YOKOYAMA, K. MIYAKE, T. NAGATA, H. SAKAUE, S. MIYAZAKI, Y. HORIIKE, A. IWATA, T. AE, M. KOYANAGI, AND M. HIROSE RAPID NON-DESTRUCTIVE SCANNING OF COMPOUND SEMICONDUCTOR WAFERS AND EPITAXIAL LAYERS 605 CARLA J. MINER MINORITY AND MAJORITY CARRIER TRANSPORT CHARACTERIZATION IN COMPOUND SEMICONDUCTORS 615 MICHAEL L. LOVEJOY ROOM TEMPERATURE PHOTOLUMINESCENCE CHARACTERIZATION OF HEMT QUANTUM WELL STRUCTURES 629 STEVEN K. BRIERLEY, AND HENRY T. HENDRIKS USE OF PRESSURE FOR QUANTUM-WELL BAND-STRUCTURE CHARACTERIZATION 634 J. H. BURNETT, P. M. AMIRTHARAJ, H. M. CHEONG, W. PAUL, E. S. KOTELES, AND B. ELMAN DOUBLE-MODULATION AND SELECTIVE EXCITATION PHOTOREFLECTANCE FOR WAFER-LEVEL CHARACTERIZATION OF QUANTUM-WELL LASER STRUCTURES 639 D. CHANDLER-HOROWITZ, D. W. BERNING, J. G. PELLEGRINO, J. H. BURNETT, P. M. AMIRTHARAJ, D. P. BOUR, AND D. W. TREAT OPTICAL CHARACTERIZATION OF MBE-GROWN GAAS-ALGAAS SUPERLATTICES FOR INFRARED DETECTORS 644 Z. * FENG, S. PERKOWITZ, J. CEN, K. K. BAJAJ, D. K. KINELL, AND R. L. WHITNEY IDENTIFICATION OF SHALLOW ACCEPTORS IN GAAS USING TIME-DELAYED PHOTOLUMINESCENCE SPECTROSCOPY 649 A. M. GILINSKY AND K. S. ZHURAVLEV ATOMIC FORCE MICROSCOPY AS A PROCESS CHARACTERIZATION TOOL FOR GAAS-BASED INTEGRATED CIRCUIT FABRICATION 654 A. J. HOWARD, A. G. BACA, R. J. SHUL, J. * ZOLPER, M. E. SHERWIN, AND D. J. RIEGER INFRARED TRANSMISSION TOPOGRAPHY: APPLICATION TO NONDESTRUCTIVE MEASUREMENT OF DISLOCATION DENSITY AND CARRIER CONCENTRATION IN SILICON-DOPED GALLIUM ARSENIDE WAFERS 659 M. G. MIER, D. * LOOK, J. R. SIZELOVE, D. * WALTERS, AND D. L. BEASLEY NEW DIRECT RF PARAMETER EXTRACTION TECHNIQUE FOR HETEROJUNCTION BIPOLAR TRANSISTORS USING AN EXTENDED EQUIVALENT CIRCUIT 664 D. PETERS, W. DAUMANN, W. BROCKERHOFF, R. REUTER, E. KOENIG, AND F. J. TEGUDE CONTACTLESS ROOM TEMPERATURE ANALYSIS OF HETEROJ UNCTION BIPOLAR TRANSISTOR WAFER STRUCTURES USING PHOTOREFLECTANCE 669 FRED H. POLLAK, WOJCIECH KRYSTEK, M. LEIBOVITCH, H. QIANG, DWIGHT * STREIT, AND MICHAEL WOJTOWICZ XIV NOVEL MAGNETIC FIELD CHARACTERIZATION TECHNIQUES FOR COMPOUND SEMICONDUCTOR MATERIALS AND DEVICES 673 * A. RICHTER, D. G. SEILER, J. G. PELLEGRINO, W. F. TSENG, AND W. R. THURBER NONDESTRUCTIVE CHARACTERIZATION OF GAAS-BASED MULTILAYER EPITAXIAL STRUCTURES 678 PATRICIA B. SMITH, ANDREW A. ALLERMAN, AND WALTER M. DUNCAN ELECTROCHEMICAL CAPACITANCE-VOLTAGE, MAGNETO-HALL AND THEORETICAL ANALYSIS OF HETEROSTRUCTURE TRANSISTOR MATERIAL 683 * E. STUTZ, *. JOGAI, AND D. * LOOK ATOMIC SCALE CHARACTERIZATION OF INGAAS/GAAS/SI HETEROSTRUCTURE BY HRTEM, ATOMISTIC MODELING AND MULTISLICE IMAGE SIMULATION 688 T. ZHELEVA, M. ICHIMURA, S. OKTYABRSKY, AND J. NARAYAN EXTRACTION OF DYNAMICAL CHARACTERISTICS OF 2-D ELECTRON GAS IN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS 693 ROBERTO SUNG, JAU-WEN CHEN, AND MUKUNDA B. DAS APPENDICES APPENDIX 1 PANEL DISCUSSIONS MEETING THE METROLOGY REQUIREMENTS OF THE NATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS 701 CHOOSING THE PROPER INSTRUMENTS - BENCHMARKING, COST OF OWNERSHIP, STANDARDIZATION 703 IN-SITU MEASUREMENTS - PROMISE AND BARRIERS 705 APPENDIX 2: RUMP SESSION- ROADMAPPING SYNCHROTRON X-RAY METROLOGY 707 APPENDIX 3: AFTER DINNER REMARKS - HISTORICAL PERSPECTIVE ON SEMICONDUCTOR CHARACTERIZATION 709 AUTHOR INDEX 719 SUBJECT INDEX 72 3 XV
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Konferenzschrift 1995
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institution BVB
isbn 1563965038
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publisher AIP Press
record_format marc
spelling Semiconductor characterization present status and future needs eds. W. M. Bullis ...
Woodbury, NY AIP Press 1996
XIX, 729 S. zahlr. Ill., graph. Darst.
txt rdacontent
n rdamedia
nc rdacarrier
Semiconductors Characterization Congresses
Semiconductors Design and construction Congresses
Halbleiter (DE-588)4022993-2 gnd rswk-swf
Charakterisierung (DE-588)4069926-2 gnd rswk-swf
(DE-588)4143413-4 Aufsatzsammlung gnd-content
(DE-588)1071861417 Konferenzschrift 1995 gnd-content
Halbleiter (DE-588)4022993-2 s
Charakterisierung (DE-588)4069926-2 s
DE-604
Bullis, W. M. Sonstige oth
GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007403904&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis
spellingShingle Semiconductor characterization present status and future needs
Semiconductors Characterization Congresses
Semiconductors Design and construction Congresses
Halbleiter (DE-588)4022993-2 gnd
Charakterisierung (DE-588)4069926-2 gnd
subject_GND (DE-588)4022993-2
(DE-588)4069926-2
(DE-588)4143413-4
(DE-588)1071861417
title Semiconductor characterization present status and future needs
title_auth Semiconductor characterization present status and future needs
title_exact_search Semiconductor characterization present status and future needs
title_full Semiconductor characterization present status and future needs eds. W. M. Bullis ...
title_fullStr Semiconductor characterization present status and future needs eds. W. M. Bullis ...
title_full_unstemmed Semiconductor characterization present status and future needs eds. W. M. Bullis ...
title_short Semiconductor characterization
title_sort semiconductor characterization present status and future needs
title_sub present status and future needs
topic Semiconductors Characterization Congresses
Semiconductors Design and construction Congresses
Halbleiter (DE-588)4022993-2 gnd
Charakterisierung (DE-588)4069926-2 gnd
topic_facet Semiconductors Characterization Congresses
Semiconductors Design and construction Congresses
Halbleiter
Charakterisierung
Aufsatzsammlung
Konferenzschrift 1995
url http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007403904&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
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