Semiconductor interfaces at the sub-nanometer scale [Proceedings of the NATO Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale, Riva del Garda, Italy, 31 August - 2 September 1992]
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| Format: | Tagungsbericht Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Dordrecht u.a.
Kluwer
1993
|
| Schriftenreihe: | NATO: [Nato ASI series / E]
243 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
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| 245 | 1 | 0 | |a Semiconductor interfaces at the sub-nanometer scale |b [Proceedings of the NATO Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale, Riva del Garda, Italy, 31 August - 2 September 1992] |c ed. by H. W. M. Salemink ... |
| 264 | 1 | |a Dordrecht u.a. |b Kluwer |c 1993 | |
| 300 | |a XI, 256 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a NATO: [Nato ASI series / E] |v 243 | |
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| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1993 |z Riva del Garda |2 gnd-content | |
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| 689 | 0 | 1 | |a Nanometerbereich |0 (DE-588)4327473-0 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Salemink, Huub W. |e Sonstige |4 oth | |
| 711 | 2 | |a Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale |d 1992 |c Riva del Garda |j Sonstige |0 (DE-588)5098399-4 |4 oth | |
| 810 | 2 | |a E] |t NATO: [Nato ASI series |v 243 |w (DE-604)BV000007015 |9 243 | |
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Datensatz im Suchindex
| DE-BY-TUM_call_number | 0001 95 A 726 |
|---|---|
| DE-BY-TUM_katkey | 643599 |
| DE-BY-TUM_location | Mag |
| DE-BY-TUM_media_number | 040000498202 |
| _version_ | 1820857720983519232 |
| adam_text | Table of Contents
Preface
..........................................................................................................................................ix
I. Epitaxial Growth of Semiconductors
Y. Horikoshi, M. Kawashima, H. Yamaguchi and M. Sato
Surface Atomic Processes during Epitaxial Growth
............................................................... 1
T. Suzuki and A. Gomyo
Formation Mechanism of CuPt-Type
Sublattice
Ordering for IH-III-V Type Compound
Semiconductors
......................................................................................................................... 11
S.M.
Mokier
Surface Chemistry in the Si/Ge GSMBE System Studied Using RHEED
.......................... 25
P.M.
Koenraad, I.
Bársony,
J.C.M.
Henning,
J.A.A.J.
Perenboom
and
J.H.
Wolter
Diffusion
of
Si
in
б
-Doped
GaAs
Studied by Magneto Transport
...................................... 35
D.D.
Vvedensky
Theory of Atomic-Scale Processes during Epitaxial Growth: Current Status
..................... 45
C.T. Foxon
A Comparison of Growth by Molecular Beam Epitaxy, Metalorganic Chemical Vapour
Deposition and Chemical Beam Epitaxy
................................................................................. 57
M.D. Pashley and K.W. Haberem
The Role of Surface Reconstructions in MBE Growth of GaAs
......................................... 63
M.C. Yalabik and
A.
Kabakçioglu
A Lattice Gas Analysis of Binary Alloys on a Tetrahedral Lattice
..................................... 75
J.-W. Sakai, P.H.
Beton,
M. Henini,
P.C.
Main, L. Eaves and G. Hill
Resonant Tunnelling via the Bound States of Shallow Donors
........................................... 83
II. Electronic Properties of Semiconductor Interfaces
A. Baldereschi, R.
Resta, M. Peressi, S.
Baroni
and
K. Mäder
Engineering
of Semiconductor Heterostructures by Ultrathin Control Layers
.................... 89
J.P. Landesman, J.
Nagle,
J.C.
Garcia,
С.
Mottet,
M. Larive,
J. Massies,
G. Jezequel
and P. Bois
Interface Chemical Structure,
Band Offsets and Optical Properties of Various
ΙΠ
-V
Compounds Heterostructures
................................................................................................. 105
R.H. Williams,
Т.Н.
Shen and S. Hooper
Dipole
Layers at GaAs Heterojunctions and Their Investigation
....................................... 115
O. Pankratov and M. Scheffler
Clustering and Correlations on GaAs-Metal interface
........................................................ 121
VUl
III. Atomic Scale Analysis of Semiconductor Interfaces
R.M. Feenstra, A. Vateriaus, E.T. Yu,
P.D. Kirchner,
CL.
Lin,
J.M.
Woodall
and G.D. Pettit
Cross-Sectional Scanning Tunneling Microscopy of GaAs Doping Superlattices: Pinned vs.
Unpinned Surfaces
.................................................................................................................. 127
A. Ourmazd
Semiconductor Interfaces: Structure, Properties and Processing at the Atomic Level
...... 139
H.W.M.
Salemink,
M.B.
Johnson,
U.
Maier,
P.
Kœnraad
and
О.
Albrektsen
Epitaxial Interfaces of III-V Heterostructures: Atomic Resolution, Composition Fluctuations
and Doping
............................................................................................................................. 151
IV. Group IV Materials
E.
Kasper
Group IV Strained Layer Systems
....................................................................................... 161
M. Henzler
MISFIT Accommodation during Heteroepitaxial Growth
.................................................. 173
K. Werner, S.
Butzke, P.F.A.
Alkemade,
S.
Radelaar, J. Trommel,
P. Balk and W.G.
Sloof
Smear-Out of the Ge/Si Interface in Gas Source MBE Monitored by RHEED
................ 181
M.
Jaros,
A.W. Beavis, R.J. Turton, J.P. Hagon, E. Corbin, K.B. Wong and
DJ. Wolford
Optical Properties of Imperfect Si-Ge Heterostructures
..................................................... 191
A.R. Powell, K. Eberl, B.A. Ek and
S.S.
Iyer
,
Growth and Properties of the Ternary System
.............................................. 199
M.B. Johnson, U. Maier, H.P. Meier, H.
Salemink, E.T.
Yu and
S.S.
Iyer
Atomic-Scale View of Epitaxial Layers with Cross-Sectional Scanning Tunneling
Microscopy
............................................................................................................................. 207
V. Nanometer Scale Devices
H. Sakaki, T. Noda, M. Tanaka, J. Motohisa, Y. Kadoya and
N.
Jkarashi
Atomic-Scale Understanding and Controllability of
Heterointerfaces
in Quantum
Microstructures
....................................................................................................................... 217
K.H. Ploog and R.
Nötzel
Do Periodic Interface Corrugations Cause the Unusual Optical Properties of GaAs/AlAs
Heterostructures Grown on Non-(100)-Oriented Substrates?
............................................... 231
G.A. Acket, P.J.A. Thijs, JJ.M. Binsma, L.F. Tiemeijer, A. Valster, C.J. van
der Poel,
M.J.B. Boermans and T. van
Dongen
Strained Layer Quantum Well Semiconductor Lasers
........................................................ 241
Subject Index
............................................................................................................................ 251
List of Participants
................................................................................................................... 255
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| genre | (DE-588)1071861417 Konferenzschrift 1993 Riva del Garda gnd-content |
| genre_facet | Konferenzschrift 1993 Riva del Garda |
| id | DE-604.BV009975488 |
| illustrated | Illustrated |
| indexdate | 2024-12-23T13:48:32Z |
| institution | BVB |
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| isbn | 0792323971 |
| language | English |
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| physical | XI, 256 S. graph. Darst. |
| publishDate | 1993 |
| publishDateSearch | 1993 |
| publishDateSort | 1993 |
| publisher | Kluwer |
| record_format | marc |
| series2 | NATO: [Nato ASI series / E] |
| spellingShingle | Semiconductor interfaces at the sub-nanometer scale [Proceedings of the NATO Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale, Riva del Garda, Italy, 31 August - 2 September 1992] Halbleitergrenzfläche (DE-588)4158802-2 gnd Nanometerbereich (DE-588)4327473-0 gnd |
| subject_GND | (DE-588)4158802-2 (DE-588)4327473-0 (DE-588)1071861417 |
| title | Semiconductor interfaces at the sub-nanometer scale [Proceedings of the NATO Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale, Riva del Garda, Italy, 31 August - 2 September 1992] |
| title_auth | Semiconductor interfaces at the sub-nanometer scale [Proceedings of the NATO Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale, Riva del Garda, Italy, 31 August - 2 September 1992] |
| title_exact_search | Semiconductor interfaces at the sub-nanometer scale [Proceedings of the NATO Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale, Riva del Garda, Italy, 31 August - 2 September 1992] |
| title_full | Semiconductor interfaces at the sub-nanometer scale [Proceedings of the NATO Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale, Riva del Garda, Italy, 31 August - 2 September 1992] ed. by H. W. M. Salemink ... |
| title_fullStr | Semiconductor interfaces at the sub-nanometer scale [Proceedings of the NATO Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale, Riva del Garda, Italy, 31 August - 2 September 1992] ed. by H. W. M. Salemink ... |
| title_full_unstemmed | Semiconductor interfaces at the sub-nanometer scale [Proceedings of the NATO Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale, Riva del Garda, Italy, 31 August - 2 September 1992] ed. by H. W. M. Salemink ... |
| title_short | Semiconductor interfaces at the sub-nanometer scale |
| title_sort | semiconductor interfaces at the sub nanometer scale proceedings of the nato advanced research workshop on the physical properties of semiconductor interfaces at the sub nanometer scale riva del garda italy 31 august 2 september 1992 |
| title_sub | [Proceedings of the NATO Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale, Riva del Garda, Italy, 31 August - 2 September 1992] |
| topic | Halbleitergrenzfläche (DE-588)4158802-2 gnd Nanometerbereich (DE-588)4327473-0 gnd |
| topic_facet | Halbleitergrenzfläche Nanometerbereich Konferenzschrift 1993 Riva del Garda |
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