Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si2H6 and SiH4 for low temperature silicon epitaxy

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1. Verfasser: Wang, Chunlin (VerfasserIn)
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Sprache:English
Veröffentlicht: 1993
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MARC

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Datensatz im Suchindex

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language English
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physical 138 S. Ill., graph. Darst.
publishDate 1993
publishDateSearch 1993
publishDateSort 1993
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spelling Wang, Chunlin Verfasser aut
Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si2H6 and SiH4 for low temperature silicon epitaxy Chunlin Wang
1993
138 S. Ill., graph. Darst.
txt rdacontent
n rdamedia
nc rdacarrier
München, Techn. Univ., Diss., 1993
Einkristall (DE-588)4013901-3 gnd rswk-swf
Silan (DE-588)4337259-4 gnd rswk-swf
Disilan (DE-588)4150150-0 gnd rswk-swf
Plasmaätzen (DE-588)4174821-9 gnd rswk-swf
Epitaxieschicht (DE-588)4152546-2 gnd rswk-swf
CVD-Verfahren (DE-588)4009846-1 gnd rswk-swf
Silicium (DE-588)4077445-4 gnd rswk-swf
(DE-588)4113937-9 Hochschulschrift gnd-content
Plasmaätzen (DE-588)4174821-9 s
Silicium (DE-588)4077445-4 s
Einkristall (DE-588)4013901-3 s
DE-604
Epitaxieschicht (DE-588)4152546-2 s
Disilan (DE-588)4150150-0 s
CVD-Verfahren (DE-588)4009846-1 s
Silan (DE-588)4337259-4 s
DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006549278&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis
spellingShingle Wang, Chunlin
Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si2H6 and SiH4 for low temperature silicon epitaxy
Einkristall (DE-588)4013901-3 gnd
Silan (DE-588)4337259-4 gnd
Disilan (DE-588)4150150-0 gnd
Plasmaätzen (DE-588)4174821-9 gnd
Epitaxieschicht (DE-588)4152546-2 gnd
CVD-Verfahren (DE-588)4009846-1 gnd
Silicium (DE-588)4077445-4 gnd
subject_GND (DE-588)4013901-3
(DE-588)4337259-4
(DE-588)4150150-0
(DE-588)4174821-9
(DE-588)4152546-2
(DE-588)4009846-1
(DE-588)4077445-4
(DE-588)4113937-9
title Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si2H6 and SiH4 for low temperature silicon epitaxy
title_auth Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si2H6 and SiH4 for low temperature silicon epitaxy
title_exact_search Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si2H6 and SiH4 for low temperature silicon epitaxy
title_full Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si2H6 and SiH4 for low temperature silicon epitaxy Chunlin Wang
title_fullStr Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si2H6 and SiH4 for low temperature silicon epitaxy Chunlin Wang
title_full_unstemmed Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si2H6 and SiH4 for low temperature silicon epitaxy Chunlin Wang
title_short Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si2H6 and SiH4 for low temperature silicon epitaxy
title_sort etching of single crystalline silicon by hydrogen plasma and silicon deposition from si2h6 and sih4 for low temperature silicon epitaxy
topic Einkristall (DE-588)4013901-3 gnd
Silan (DE-588)4337259-4 gnd
Disilan (DE-588)4150150-0 gnd
Plasmaätzen (DE-588)4174821-9 gnd
Epitaxieschicht (DE-588)4152546-2 gnd
CVD-Verfahren (DE-588)4009846-1 gnd
Silicium (DE-588)4077445-4 gnd
topic_facet Einkristall
Silan
Disilan
Plasmaätzen
Epitaxieschicht
CVD-Verfahren
Silicium
Hochschulschrift
url http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006549278&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
work_keys_str_mv AT wangchunlin etchingofsinglecrystallinesiliconbyhydrogenplasmaandsilicondepositionfromsi2h6andsih4forlowtemperaturesiliconepitaxy