Charge trapping near the Si SiO2 interface in semiconductor devices
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
1981
|
| Schlagworte: | |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV009065621 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | t| | ||
| 008 | 940227s1981 xx d||| m||| 00||| eng d | ||
| 035 | |a (OCoLC)45936773 | ||
| 035 | |a (DE-599)BVBBV009065621 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-29T | ||
| 100 | 1 | |a Hillen, Michiel W. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Charge trapping near the Si SiO2 interface in semiconductor devices |
| 264 | 1 | |c 1981 | |
| 300 | |a 160 S. |b zahlr. graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a Groningen, Diss. | ||
| 650 | 7 | |a Grenzschicht |2 swd | |
| 650 | 7 | |a Halbleiterbauelement |2 swd | |
| 650 | 7 | |a Silicium |2 swd | |
| 650 | 7 | |a Siliciumdioxid |2 swd | |
| 650 | 0 | 7 | |a Grenzschicht |0 (DE-588)4022005-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Siliciumdioxid |0 (DE-588)4077447-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |D s |
| 689 | 0 | 1 | |a Silicium |0 (DE-588)4077445-4 |D s |
| 689 | 0 | 2 | |a Siliciumdioxid |0 (DE-588)4077447-8 |D s |
| 689 | 0 | 3 | |a Grenzschicht |0 (DE-588)4022005-9 |D s |
| 689 | 0 | |5 DE-604 | |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-006004035 | |
Datensatz im Suchindex
| _version_ | 1819236062029938688 |
|---|---|
| any_adam_object | |
| author | Hillen, Michiel W. |
| author_facet | Hillen, Michiel W. |
| author_role | aut |
| author_sort | Hillen, Michiel W. |
| author_variant | m w h mw mwh |
| building | Verbundindex |
| bvnumber | BV009065621 |
| ctrlnum | (OCoLC)45936773 (DE-599)BVBBV009065621 |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01392nam a2200421 c 4500</leader><controlfield tag="001">BV009065621</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">t|</controlfield><controlfield tag="008">940227s1981 xx d||| m||| 00||| eng d</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)45936773</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV009065621</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-29T</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Hillen, Michiel W.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Charge trapping near the Si SiO2 interface in semiconductor devices</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1981</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">160 S.</subfield><subfield code="b">zahlr. graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Groningen, Diss.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Grenzschicht</subfield><subfield code="2">swd</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Halbleiterbauelement</subfield><subfield code="2">swd</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Silicium</subfield><subfield code="2">swd</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Siliciumdioxid</subfield><subfield code="2">swd</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Grenzschicht</subfield><subfield code="0">(DE-588)4022005-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Siliciumdioxid</subfield><subfield code="0">(DE-588)4077447-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterbauelement</subfield><subfield code="0">(DE-588)4113826-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiterbauelement</subfield><subfield code="0">(DE-588)4113826-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Siliciumdioxid</subfield><subfield code="0">(DE-588)4077447-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Grenzschicht</subfield><subfield code="0">(DE-588)4022005-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-006004035</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV009065621 |
| illustrated | Illustrated |
| indexdate | 2024-12-23T12:58:27Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006004035 |
| oclc_num | 45936773 |
| open_access_boolean | |
| owner | DE-29T |
| owner_facet | DE-29T |
| physical | 160 S. zahlr. graph. Darst. |
| publishDate | 1981 |
| publishDateSearch | 1981 |
| publishDateSort | 1981 |
| record_format | marc |
| spelling | Hillen, Michiel W. Verfasser aut Charge trapping near the Si SiO2 interface in semiconductor devices 1981 160 S. zahlr. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Groningen, Diss. Grenzschicht swd Halbleiterbauelement swd Silicium swd Siliciumdioxid swd Grenzschicht (DE-588)4022005-9 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Siliciumdioxid (DE-588)4077447-8 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Halbleiterbauelement (DE-588)4113826-0 s Silicium (DE-588)4077445-4 s Siliciumdioxid (DE-588)4077447-8 s Grenzschicht (DE-588)4022005-9 s DE-604 |
| spellingShingle | Hillen, Michiel W. Charge trapping near the Si SiO2 interface in semiconductor devices Grenzschicht swd Halbleiterbauelement swd Silicium swd Siliciumdioxid swd Grenzschicht (DE-588)4022005-9 gnd Silicium (DE-588)4077445-4 gnd Siliciumdioxid (DE-588)4077447-8 gnd Halbleiterbauelement (DE-588)4113826-0 gnd |
| subject_GND | (DE-588)4022005-9 (DE-588)4077445-4 (DE-588)4077447-8 (DE-588)4113826-0 (DE-588)4113937-9 |
| title | Charge trapping near the Si SiO2 interface in semiconductor devices |
| title_auth | Charge trapping near the Si SiO2 interface in semiconductor devices |
| title_exact_search | Charge trapping near the Si SiO2 interface in semiconductor devices |
| title_full | Charge trapping near the Si SiO2 interface in semiconductor devices |
| title_fullStr | Charge trapping near the Si SiO2 interface in semiconductor devices |
| title_full_unstemmed | Charge trapping near the Si SiO2 interface in semiconductor devices |
| title_short | Charge trapping near the Si SiO2 interface in semiconductor devices |
| title_sort | charge trapping near the si sio2 interface in semiconductor devices |
| topic | Grenzschicht swd Halbleiterbauelement swd Silicium swd Siliciumdioxid swd Grenzschicht (DE-588)4022005-9 gnd Silicium (DE-588)4077445-4 gnd Siliciumdioxid (DE-588)4077447-8 gnd Halbleiterbauelement (DE-588)4113826-0 gnd |
| topic_facet | Grenzschicht Halbleiterbauelement Silicium Siliciumdioxid Hochschulschrift |
| work_keys_str_mv | AT hillenmichielw chargetrappingnearthesisio2interfaceinsemiconductordevices |