Proceedings of the fifth International Symposium on Silicon-on-Insulator Technology and Devices
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| Sprache: | English |
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Pennington, NJ
Electrochemical Soc.
1992
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| Schriftenreihe: | Electrochemical Society: Proceedings
1992,13 |
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| 111 | 2 | |a International Symposium on Silicon-on-Insulator Technology and Devices |n 5 |d 1992 |c Saint Louis, Mo. |j Verfasser |0 (DE-588)5076600-4 |4 aut | |
| 245 | 1 | 0 | |a Proceedings of the fifth International Symposium on Silicon-on-Insulator Technology and Devices |c ed. by Wayne E. Bailey |
| 246 | 1 | 3 | |a Silicon-on-insulator technology and devices |
| 264 | 1 | |a Pennington, NJ |b Electrochemical Soc. |c 1992 | |
| 300 | |a XI, 440 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Electrochemical Society: Proceedings |v 1992,13 | |
| 500 | |a Literaturangaben | ||
| 650 | 7 | |a Circuitos integrados |2 larpcal | |
| 650 | 7 | |a Semiconducteurs |2 ram | |
| 650 | 7 | |a Technologie silicium sur isolant |2 ram | |
| 650 | 7 | |a Électronique - Matériaux |2 ram | |
| 650 | 4 | |a Semiconductors |v Congresses | |
| 650 | 4 | |a Silicon-on-insulator technology |v Congresses | |
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| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1992 |z Saint Louis Mo. |2 gnd-content | |
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| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Bailey, Wayne E. |e Sonstige |4 oth | |
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| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-005379236 | |
Datensatz im Suchindex
| _version_ | 1819759645745479680 |
|---|---|
| adam_text | TABLE
OF
CONTENTS
PARTI
APPLICATIONS FOR
SIMOX
Abst Page
No. No.
Preface
iii
Parti
1
Introductory Remarks
-
W.
Bailey
3
SUicon-on-Insulator Technology and Devices
153
S
-
H. H. Hosack
(Invited Lecture)
Manufacturing of VLSI CMOS on
SIMOX
Substrates
154 19
-
J. Yue, B. Urke, (Invited Lecture)
J. Kueng, R. Roisen, P. Fechner,
G. Dougal, and S.T. Liu
High Performance Submicron CMOS/SOI for Logic
153 29
and SRAM Applications
- N.
Haddad and L. K. Wang (Invited Lecture)
The Implementation of a Commercial Thick Film
156 43
SOI Process
-
K. Yallup (Invited Lecture)
Body-Contacts for SOI MOSFETs
157 64
-
M. Matloubian (Invited Lecture)
A 0.5um CMOS/SOI Technology Using Accumulation
158 71
Mode Device Design
-
L. K. Wang, J. Seliskar, A.
Edenfeld,
О.
Spencer, and
N.
Haddad
An Intelligent
500
V Power Vertical DMOS on
159 77
SIMOX
Substrate
- F. Vogt,
В.
Mutterlein, and H.
Vogt
Parasitic Capacitances of SOI MOSFETs
160 89
-
J. Chen, R. Solomon, T.-Y.Chan,
P.
К. Ко,
and
C. Hu
Transient Behavior of SOI NMOSTs at Liquid
161 91
Helium Temperatures
-
C. Qaeys and E. Simoen
PART II
ELECTRICAL CHARACTERIZATION
Abst Page
No. No.
Part II
99
Introductory Remarks
-
S. Cristoloveanu
101
Improved Physical Modeling of Bipolar Effects
162 104
in SOI Transistors
-
G. A. Armstrong and W. D. French (Invited Lecture)
A Simple Subthreshold Model for Floating Body
163 113
SOI MOSFETs
-
P. Liu, G. Liu, Y. H. Chang, and J. White
Voltage Limitations of
Submicron
CMOS
164 118
on Thin SOI
-
J. Seliskar, F. Brady, L. K. Wang,
and
N.
Haddad
Study of the Kink-Related Excess Low-Frequency
165 127
Noise in SOI NMOSFETs at Room Temperature and 77K
-
C. Claeys and E. Simoen
Advantages and Limitations of Thin Film
166 135
SIMOX
MOSFETs: Reliability Aspects
-
J.
Gautier
and G.
Reimbold
(Invited Lecture)
Hot-Carrier-Induced Degradation in Partially
167 157
and Fully Depleted
SIMOX
MOSFETs
-
S. M. Gurwadi, A. Zaleski, S. Cristoloveanu,
D. E. Ioannou, G.
Campisi,
and H. L. Hughes
Back-Channel Hot-Electron Effect on the Drain
168 163
Breakdown Voltage in Thin-Film SOI MOSFETs
-
B. Zhang and
T. P. Ma
Numerical Analysis of Short-Channel and Drain
169 171
Engineering Effects for Fully Depleted
SOI MOSFETs in a Radiation Environment
-
J. H. Smith, R. Lawrence, and G.
Campisi
Device-Based Electrical Characterization
170 178
for SOI Technology Development
-
D. E. Ioannou (Invited Lecture)
Abst. Page
No. No.
Evaluation of ZMR SOI Films for BiCMOS
171 185
Application by Low Frequency Noise Investigations
-
B. Tillack, R. Banisch, F. Januschewski,
A. Chovet, K. Hoppner, and H. H.
Richter
Measurements and Analysis of Random Telegraph
172 191
Signal in Small Area SOI MOSFETs
-
O.Roux
Dit Buisson, G. Ghibaudo,
J.
Brini, and
T. Ouïsse
A New
Transient
Drain
Current
Technique
173 195
for Interface
Characterization in
SOI MOSFETs
-
H. Haddara, M. T.
Elewa,
and S. Cristoloveanu
PART
III
CHARACTERIZATION OF
MATERIALS
Part
III
203
Introductory
Remarks
-
P.L.F. Hemment
205
Defects in
SIMOX
Structures:
Characterization
174 207
and Some
Formation
Mechanisms
-
J. Margail, J.
M.
Lamure,
(Invited
Lecture)
J.
Stoemenos, and
Α. Μ.
Papon
Effect of Thermal Ramping Conditions on Defect
175 221
Formation in Oxygen Implanted SOI Material
-
S.
Krause,
J. D. Lee, J. C.
Park,
P. Roitman, and M. El-Ghor
Screen Oxide Effects on the
SIMOX
Material
176 228
Quality Observed by Raman
Microprobe
Measurements
-
A. Perez-Rodriquez, J. R.
Morante,
E.
Martin,
J.
Jimenez,
J. Margail,
and
Α. Μ.
Papon
Kinetics of Oxygen Precipitation in Low
177 237
Fluence
SIMOX
-
L.
Meda,
S.
Bertoni,
G. Cerofolini,
С.
Spaggiari, and R.
Canteri
Novel Approach to Defect Etching in Thin Film SOI
178 251
-
H. Gassel, J. Peter-Weidemann, and H.
Vogt
Abst Page
No. No.
Correlation Between
Х
-Ray Moire Pattern and
179 259
Dislocation Density in
SIMOX
Wafers
-
M. K. El-Ghor, K. A. Joyner, and G. A. Rozgonyi
Raman Scattering and FTIR Spectroscopy as
180 264
Characterization Techniques of
SIMOX
Structures
-
J. Samitier, A. Perez-Rodriquez,
J. R.
Morante,
E.
Martín,
J.
Jimenez,
and P.
L. F. Hemment
Electro-Optical Characterization of
SIMOX
181 276
Structures by Photoconductive Based Techniques
-
J.
Macia,
A. Perez-Rodriquez,
J. R.
Morante,
M. A. Lourenco,
P.
L.
F.
Hemment, and
К.
P. Homewood
The Effects on Carrier Ufetime of
SIMOX
Anneal
182 288
Process Parameters: A Designed Experiment
-
K. A. Joyner
Nondestructive SOI Process Evaluation Using
183 297
Recombination lifetime Measurements
-
A. Buczkowski, F. Shimura,
B.
Cordts,
and G. A. Rozgonyi
Investigation of Local Isolation Structures on
184 307
SIMOX
Substrates with Micro Raman Spectroscopy
and Correlation with XTEM
-
I.
De Wolf,
A. Romano-Rodriguez,
I. Vanhellemont, H. Norstrom, and H. E. Maes
PART IV
MATERIALS QUALITY
Part IV
317
Introductory Remarks
-
Katsu
Izumi
319
Dislocation-Free
SIMOX
Substrates
185 321
-
A Yoshino (Invited Lecture)
Abst Page
No. No.
Effects of High Temperature Anneal Variables
186 331
on Dislocations in
SIMOX
Films
-
K. A. Joyner, M. K. El-Ghor,
H. H. Hosack and A. K.
Rai
The Effects of Ha in
SIMOX
Annealing:
187 341
A Time Series Experiment
-
K. A. Joyner and G. A. Brown
Post-Oxygen-Implant Anneal Effects on SOI
188 349
Transistor Electrical Characteristics
-
R. D. Cherne, G. V. Rouse,
and W. A Krull
A High-Quality
SIMOX
Wafer and Its Application
189 358
to Ultrathin-Film MOSFETs
-
S. Nakashima, Y. Omura, and K.
Izumi
The Effects of Dose and Target Temperature on
190 368
the Low Energy
(70
keV)
SIMOX
Layers
-
Y. Li, J. A. Kilner, R. J.
Chater,
P. L. F. Hemment, A. Nejim,
A. K. Robinson, K. J. Reeson,
C. D.
Marsh and
G. R.
Booker
Etch-Stop Layer in Silicon Produced by
191 384
Implantation of Electrically Inactive Impurities
-
Q.-Y.
Tong,
D.
Feijoo,
G. Cha,
H-M.
You,
and U. Gosele
SIMOX:
An Efficient Etch-Stop to Fabricate
192 403
Silicon Membranes with Well Defined Thickness
-
H. G. Dura, H. Gassel, W. Mokwa,
and H.
Vogt
Reactive Ion Etching of SOI (ZMR and
SIMOX)
193 409
Silicon in CF«
+
O, and SF6
+
O2 Plasmas
-
O. W. Purbo,
C. R.
Servakumar, and D. Misra
Gettering
of Bonded SOI Layers
194 416
-
H.-D.
Chiou
and F.
Secco D Aragona
50
mn Thick SOI Fabrication by Advanced
ELO: 19S
424
Tunnel Epitaxy
-
A. Ogura,A. Furuya, and R. Koh
AUTHOR INDEX
433
SUBJECT INDEX
435
ix
AUTHOR
INDEX
Abst#
Lhi, S.T.
154
Lourenco, M-A
181
Ma, T.P.
168
Macìa, J.
181
Maes, H.E.
184
Margail, J.
174
Margail, J.
176
Martin, E.
176
Martin, E.
180
Matloubian,
M.
157
Meda, L.
177
Misra, D.
193
Mokwa, W.
192
Morante, J.R.
176
Morante, J.R.
180
Morante, J.R.
181
Mutterlein,
В.
159
Nakashima, S.
189
Nejim,
A
190
Norstram,
H.
184
Ogura, A
195
Omura,
Y.
189
Ouisse, T.
172
Papon, A.M.
174
Papon, A-M.
176
Park, J.C.
175
Perez-Rodriquez,
Α.
180
Perez-Rodriquez,
Α.
181
Perez-Rodriquez,
Α.
176
Peter-Weidemann,
J.
178
Purbo,
W.
193
Rai, A.K.
186
Reeson,
KJ.
190
Reimbold,
G.
166
Richter, H.H. 171
Robinson, A.K.
190
Roisen, R.
154
Roitman, P.
175
Romano-Rodriguez, A.
184
Abst#
Rouse,
G.
188
Roux Dit Buisson
172
Rozgonyi, G.
179
Rozgonyi, G.
183
Samitier, J.
180
Secco
D Aragona, F.
194
Sehskar, J.
158
Seliskar, J.
164
Sehrakumar, C.R.
193
Shimura, F.
183
Simoen, E.
165
Simoen, E.
161
Smith, J.H.
169
Solomon, R.
160
Spaggiari,
С.
177
Spencer,
О.
158
Stoemenos, J.
174
Strickland,
F.
194
Sullwold, J.
154
Tfflack, B.
171
Tong, Q.-Y.
191
Urke, B.
154
Vanhelkmont,
I.
184
Vogt,
F.
159
Vogt,
H.
159
Vogt,
H.
178
Vogt,
H.
192
Wang, L.K.
155
Wang,
LK. 158
Wang, L.K.
164
White, J.
163
YaDup, K.
156
Yoshino, A.
168
Yoshino, A.
185
You, H.-M.
191
Yue, J.
154
Zaleski, A.
167
Zhang,
В.
168
434
|
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| genre | (DE-588)1071861417 Konferenzschrift 1992 Saint Louis Mo. gnd-content |
| genre_facet | Konferenzschrift 1992 Saint Louis Mo. |
| id | DE-604.BV008151852 |
| illustrated | Illustrated |
| indexdate | 2024-12-23T12:40:59Z |
| institution | BVB |
| institution_GND | (DE-588)5076600-4 |
| isbn | 1566770130 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-005379236 |
| oclc_num | 26159156 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM |
| owner_facet | DE-91 DE-BY-TUM |
| physical | XI, 440 S. Ill., graph. Darst. |
| publishDate | 1992 |
| publishDateSearch | 1992 |
| publishDateSort | 1992 |
| publisher | Electrochemical Soc. |
| record_format | marc |
| series | Electrochemical Society: Proceedings |
| series2 | Electrochemical Society: Proceedings |
| spellingShingle | Proceedings of the fifth International Symposium on Silicon-on-Insulator Technology and Devices Electrochemical Society: Proceedings Circuitos integrados larpcal Semiconducteurs ram Technologie silicium sur isolant ram Électronique - Matériaux ram Semiconductors Congresses Silicon-on-insulator technology Congresses SOI-Technik (DE-588)4128029-5 gnd |
| subject_GND | (DE-588)4128029-5 (DE-588)1071861417 |
| title | Proceedings of the fifth International Symposium on Silicon-on-Insulator Technology and Devices |
| title_alt | Silicon-on-insulator technology and devices |
| title_auth | Proceedings of the fifth International Symposium on Silicon-on-Insulator Technology and Devices |
| title_exact_search | Proceedings of the fifth International Symposium on Silicon-on-Insulator Technology and Devices |
| title_full | Proceedings of the fifth International Symposium on Silicon-on-Insulator Technology and Devices ed. by Wayne E. Bailey |
| title_fullStr | Proceedings of the fifth International Symposium on Silicon-on-Insulator Technology and Devices ed. by Wayne E. Bailey |
| title_full_unstemmed | Proceedings of the fifth International Symposium on Silicon-on-Insulator Technology and Devices ed. by Wayne E. Bailey |
| title_short | Proceedings of the fifth International Symposium on Silicon-on-Insulator Technology and Devices |
| title_sort | proceedings of the fifth international symposium on silicon on insulator technology and devices |
| topic | Circuitos integrados larpcal Semiconducteurs ram Technologie silicium sur isolant ram Électronique - Matériaux ram Semiconductors Congresses Silicon-on-insulator technology Congresses SOI-Technik (DE-588)4128029-5 gnd |
| topic_facet | Circuitos integrados Semiconducteurs Technologie silicium sur isolant Électronique - Matériaux Semiconductors Congresses Silicon-on-insulator technology Congresses SOI-Technik Konferenzschrift 1992 Saint Louis Mo. |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=005379236&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV001900941 |
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