Proceedings of the Eighth European Conference on Chemical Vapour Deposition Glasgow, Scotland, 9 - 13 September 1991 = Actes de la 8ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse
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1991
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1991,2 : Supplément au Journal de physique II, no. 7 |
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| 111 | 2 | |a European Conference on Chemical Vapour Deposition |n 8 |d 1991 |c Glasgow |j Verfasser |0 (DE-588)1222817-5 |4 aut | |
| 245 | 1 | 0 | |a Proceedings of the Eighth European Conference on Chemical Vapour Deposition |b Glasgow, Scotland, 9 - 13 September 1991 = Actes de la 8ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse |c ed. by Michael L. Hitchman ... |
| 246 | 1 | 1 | |a Actes de la 8ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse |
| 264 | 1 | |a Les Ulis |b Ed. de Physique |c 1991 | |
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| adam_text | Volume 2
JOURNAL DE PHYSIQUE IV
Colloque C2
Supplement au Journal de Physique II, n° 7
Septembre 1991
Proceedings of the
Eighth European Conference on
Chemical Vapour Deposition
Actes de la
8eme Conference Europeenne sur les
Depots Chimiques en Phase Gazeuse
£URO CJA
WGHT
Glasgow, Scotland, 9-13 September 1991
Edited by : Michael L Hitchman
Nicholas J Archer
lei editions
physique
Avenue du Hoggar,
Zone Industrielle de Courlaboeuf,
B P 112,
F-91944 Les Ulis Cedex A, France
CONTENTS
FUNDAMENTAL S
C WERNER - Numerical modelling of CVD processes and equip
ment (Invited Lecture) C2-3
C R KLEIJN - The modeling of LPCVD in single-wafer reactors
as a tool for process optimization and equipment design
(Keynote Lecture) C2-19
X W LI, B Z GUO, S H LIN and H MA - Angular distribution
of desorbed molecules C2-33
Y WANG, C CHAUSSAVOINE and F TEYSSANDIER - 2D modelling
of silicon chemical vapor deposition in an impinging jet
reactor C2-39
L J de LEGfe and M HENDRIKS - Characterization and optimiza
tion of the LPCVD silicon oxynitride process, using the design
of experiments method C2-47
Y EGASHIRA, T SORITA, S SHIGA, K IKUTA and H KOMIYAMA -
Mechanism of step coverage formation of Si02 films from
TEOS and effects of gas phase additives studied by
micro/macrocavity method C2-55
M GUEYE, E SCHEID, P TAURINES, P DUVERNEUIL,
D BIELLE-DASPET and J P COUDERC - Silicon deposition from
disilane : experimental study and modelling C2-63
C AZZARO, P DUVERNEUIL and J P COUDERC - A novel wafer
cage for better uniformity of phosphorus doped silicon
layers : experimental study and modelling C2-71
C AZZARO, E SCHEID, D BIELLE-DASPET, P DUVERNEUIL and
P BOUDRE - An understanding of in situ boron doped poly-
silicon films by characterization and simulation C2-79
L -S HONG, Y SHIMOGAKI and H KOMIYAMA - Gas phase reaction
in systhesis of SiC films by low pressure chemical vapor
deposition from Si2H6 and C2H2 at 873 K C2-87
XIV
Y SHIMOGAKI, T SAITO, F TADOKORO and H KOMIYAMA - The
reactivity and molecular size of film precursors during
chemical vapor deposition of WSix C2-95
v
T KIMURA and T TOJIMA - Numerical model of a fluidized bed
reactor for polycrystalline silicon production-estimation of
CVD and fines formation C2-103
M PONS, M SANCANDI and J F NOWAK - Transport phenomena
and reactor design for chromium carbide deposition C2-111
S PROUHET, A GUETTE and F LANGLAIS - An experimental
kinetic study of boron nitride CVD from BF3-NH3-Ar mixtures C2-119
M SASAKI, A OHKUBO and T HIRAI - Gas flow simulation of
chemical vapour infiltration in a vertical hot-wall reactor C2-127
J H SCHOLTZ, J E GATICA, H J VILJOEN and V HLAVACEK -
Analysis of transport phenomena in the coating of fibers by
CVD C2-135
E FITZER, W FRITZ and G SCHOCH - The chemical vapour impre
gnation of porous solids Modelling of the CVI- process C2-143
CHARACTERISATION
W RICHTER and P KURPAS - In-situ optical characterisation of
CVD processes (Invited Lecture) C2-153
M E PEMBLE, D S BUHAENKO, H PATEL, A STAFFORD and
A G TAYOR - Some insight into the nature of the surface che
mical processes involved in the MOVPE growth of GaAs from
arsine and trimethyl- or triethyl-gallium (Keynote Lecture) C2-155
H PATEL and ME- PEMBLE - Reflection-absorption IR spectros
copy as an in-situ probe of the surface chemistry of semicon
ductor growth intermediates : the adsorption of trimethyl-
gallium at GaAs (100) surfaces at 300 K C2-167
H CHEHOUANI, B ARMAS, C COMBESCURE, S BENET and
S BRUNET - Experimental study and numerical simulation of
hydrodynamics and heat transfer in a cold-wall CVD reactor C2-175
M TAMME, R KAMILLI, P PADUSCHEK, P MONTGOMERY and
S ILLSLEY - In situ ellipsometry, a measurement technique
for dynamic film characterization and process
development C2-183
PAC GROENEN, JGA HOELSCHER and H H BRONGERSMA - Ana-
lysis of CVD by surface analysis techniques and in-situ mass
spectrometry C2-185
W AHMED, J S F00RD, N K SINGH and H D PILKINGTON - The
application of a supersonic molecular beam scattering system
to understanding CVD processes C2-193
E M KELDER, P J VAN DER PUT, JGM BECHT and J SCH00NMAN -
Deposition of cubic boron monophosphide from BBr3 and PBr3 :
a reaction mechanism C2-201
XV
E V SHALAEVA, M V KUZNETSOV, R S BARYSHEV and
B V MITROFANOV - Synthesis and structure of nonstoichiometric
S-NbNltr films C2-209
H B de BREE, M H HAAFKENS, M M MICHORIUS and L R WOLFF -
Nucleation and growth in TiN CVD on graphite substrates C2-217
A FIGUERAS, R RODRIGUEZ-CLEMENTE, S GAREL1K, J SANTISO,
B ARMAS, C COMBESCURE, A MAZEL, Y KIHN and J SfeVELY -
Influence of H2 partial pressure on the morphology and crys
tallization of SiC layers obtained by LPCVD using tetramethyl-
silane C2-225
D GUORUX, C LXHUA, Y BAILIANG and L MINGDENG - A study of
a-Fe203 ultrafine particle films C2-233
MOCVD
K F JENSEN, A ANNAPRAGADA, K L HO, J -S HUH, S PATNAIK
and S SALIM - Metalorganic chemical vapor deposition :
examples of the influence of precursor structure on film
properties (Invited Lecture) C2-243
A C JONES - Metalorganic precursors for semiconductors
requirements and recent developments (Keynote Lecture) C2-253
R D PILKINGTON, P A JONES, W AHMED, R D TOMLINSON,
A E HILL, J J SMITH and R NUTTALL - Low pressure MOCVD of
copper based compounds for photovoltaic applications C2-263
JAT NORMAN, B A MURATORE, P N DYER, D A ROBERTS and
A K HOCHBERG - New OMCVD precursors for selective copper
metallization C2-271
B LECOHIER, J -M PHILIPPOZ, B CALPINI, T STUMM and
H VAN DEN BERGH - The influence of water vapor on the
selective low pressure CVD of copper C2-279
A HARSTA and J -O CARLSSON -Thermodynamic modeling of
MOCVD of the superconducting phase in the Bi-Sr-Ca-Cu-0 sys
tem : influence of metal precursor and oxygen source C2-287
CIMA SPEE, E A VAN DER ZOUWEN-ASSINK, K TIMMER,
A MACKOR and H A MEINEMA - Deposition of Y-Ba-Cu-O-films by
MO-CVD using a novel barium precursor C2-295
C PIJOLAT, L BRUNO and R LALAUZE - Low pressure chemical
vapor deposition of tin oxide thin films from an organometal-
lic compound Application to gas detection C2-303
W KERN, A CHEN and N SANDLER - MOCVD of tantalum pentoxide
for large-area ULSI circuit wafers C2-311
D W SNYDER, P J SIDES, E I KO and S MAHAJAN - Growth^
kinetics, crystal structure, and morphology of OMVPE-grown
homoepitaxial CdTe C2-319
M B AMJOUD, A REYNES, R MORANCHO, P MAZEROLLES and
R CARLES - Comparative study of GexCx_x films prepared by
MOCVD from tetraethylgermanium and tetravinylgermanium C2-327
XVI
ACTIVATED METHODS
O LEHMANN and M STUKE - Generation of three-dimensional
free-standing micro-objects by laser chemical processing
(Invited Lecture) C2-337
A GICQUEL and Y CATHERINE - Plasmas; : sources of excited,
dissociated and ionized species Consequences for chemical
vapor deposition (CVD) and for surface treatment (Keynote
Lecture) C2-343
C LICOPPE, C MERIADEC, J FLICSTEIN, Y I NISSIM and
J M MOISON - Surface mechanisms in the UVCVD of Si02 films C2-357
S MOTOJIMA and S MANO - Preparation of SiC films by photo
chemical vapour deposition using a D? lamp C2-365
V SHANOV, B IVANOV and C POPOV - Laser induced direct
writing of aluminium C2-373
W ZHANG, M LELOGEAIS and M DUCARROIR - Kinetic approach of
the deposition of silicon carbide based films obtained by
PACVD C2-381
B WISNIEWSKI, J DURAND and L COT - Copper and copper oxide
thin films obtained by metalorganic microwave plasma CVD C2-389
K -T RIE, J WOHLE and A GEBAUER - Plasma assisted CVD
using metallo-organic compounds as precursors C2-397_
N AZEMA, J DURAND, R BERJOAN, J L BALLADORE and L COT -
Influence of excitation frequency on oriented (1010) growth
of aluminium nitride thin films by P3CVD C2-405
C FAKIH, R S BES, B ARMAS and D THENEGAL - Plasma deposi
tion of silicon nitride C2-413
H DEL PUPPO, T SINDZINGRE, L PECCOUD and J DESMAISON -
Downstream microwave plasma enhanced chemical vapour deposi
tion of Si02 using 02/SiH4 and N20/SiH4 mixtures C2-421
T KOJIMA, M MATSUKATA, M ARAO, M NAKAMURA and
Y MITSUYOSHI - Development of a plasma jetting fluidized
bed reactor C2-429
A TISSIER, J KHALLAAYOUNE, A GERODOLLE and B HUIZING -
Planarized intermetal dielectric deposited by DECR CVD C2-437
ENVIRONMENTAL ISSUES AND LARGE SCALE PROCESSES
R H WALLING and R H MOSS - Safety and environmental aspects
of CVD (Invited Lecture) C2-447
M L HAMMOND - CVD exhaust-safety and environmental^sanity
(Keynote Lecture) C2-449
W W CRAWFORD, J R ZUBER and W R KNOLLE - Use of the HAZOP
analysis for evaluation of CVD reactors C2-459
K BRENNFLECK and H REICH - CVD of SiC in large coating
vessels C2-467
XVII
/
T KOJIMA and 0 MORISAWA - Optimum process conditions for
stable and effective operation of a fluidized bed CVD reactor
for polycrystalline silicon production C2-475
M MATSUKATA, T ODAGIRI and T KOJIMA - Characterization of
polycrystalline silicon particles produced via CVD from mono-
silane in a fluidized bed reactor C2-483
R LUNDBERG, L PEJRYD and G LOOF - Chemical vapour infil
tration (CVI) of silicon carbide fibre preforms C2-491
S I CHI JO, K TAMURA, T TAKANO, A NAKAO arid T HIRAHARA -
Properties and practical results of tungsten carbide coating
produced by low temperature CVD process C2-497
L M JOHNSON, M SAUNDERS and D B MEAKIN - High quality
oxides for large area displays C2-505
COATINGS AND CERAMICS
E FITZER - Chemical vapour deposition - A review of 25 years
experience (Invited Lecture) C2-509
F SCHMADERER, R HUBER, H OETZMANN and G WAHL - High-Tc-
superconductors prepared by CVD (Keynote Lecture) C2-539
R PORAT - CVD coating of ceramic layers on ceramic cutting
tool materials C2-549
A OSADA, M DANZINGER, R HAUBNER and B LUX - Grain refine
ment of CVD TiC layers by A1C13, ZrCl4 and BC13 impurities C2-557
K BARTSCH, A LEONHARDT and E WOLF - Composition oscilla
tions in hard material layers deposited from the vapour phase C2-563
M DANZINGER, J PENG, R HAUBNER and I) LUX - Influence of
CH4 and Ar on the morphologies of A120,-CVD coatings C2-571
M DANZINGER, R HAUBNER and B LUX - Influence of etching
the TiC underlayer with CH4/A1C13/H2 on the CVD formation of
kappa-Al203 C2-579
D SELBMANN, A: LEONHARDT and E WOLF - Chemical vapour
deposition of Al-containing TiC- and T:i (0,C) - hard coatings C2-587
J P DEKKER, P J VAN DER PUT, R R NIHUWENHUIS, H J VERINGA
and J SCHOONMAN - Chemical vapor precipitation of submicron
titanium nitride powder C2-593
M LELOGEAIS, M DUCARROIR and R BERJOAN - Adherence and
properties of silicon carbide based films on steel C2-601
S B KIM, C B IN, S K CHOI and S S CHUN - The effects of
metallic interlayer formation on the adhesion properties of
PACVD-TiN films on tool steel C2-603
JGM BECHT, A BATH, E HENGST, P J VAN DER PUT and
J SCHOONMAN - Deposition of boron nitride by plasma enha
ced CVD using borane amine C2-617
XVIII J
J SLIFIRSKI, G HUCHET and F TEYSSANDIER - Titanocene-
dichloride as a metalorganic source for titanium carbide C2-625
B DROUIN, L VANDENBULCKE, J P PITON and R HERBIN - On the
optimization of the microstructure and the adherence of
TiC/TiN coatings deposited at moderate temperature for milling
applications C2-633
A DELBLANC BAUER and J -O CARLSSON - Corrosion of chemi
cally vapour deposited titanium carbide on an inert
substrate C2-641
M SASAKI and T HIRAI - Fabrication and evaluation of SiC/C
functionally gradient material C2-649
C COURTOIS, J DESMAISON and H TAWIL - Protection against
oxidation of C/SiC composites oy chemical vapour deposition of
titanium diboride : deposition kinetics and oxidation
behaviour of films prepared from TiCl,t/BC1,/H2 mixtures C2-657
B ASPAR, B ARMAS, C COMBESCURE and D THENEGAL - Chemical
vapour deposition of the Al-O-N system C2-665
F SAUGNAC, F TEYSSANDIER and A MARCHAND - New compounds
obtained by LPCVD in the B-C-N chemical system C2-673
M H VIDAL-SfeTIF and J L GfeRARD - LPCVD SiC coatings on
unidirectional carbon fibre-yarns : application to aluminium
matrix composites C2-681 -
Y G ROMAN, D P STINTON and T M BESMANN - Development of
high density fiber reinforced silicon carbide FCVI composites C2-689
K -L CHOY and B DERBY - The CVD of TiB2 protective coating
on SiC monofilament fibres C2-697
M NADAL and F TEYSSANDIER - ChemicaL vapor infiltration of
3D fibrous carbon preforms by zirconium carbide C2-705
E FITZER, H OETZMANN, F SCHMADERER and G WAHL - The Ba-
problem in CVD-YBa2Cu307_SHTC superconductors C2-713
J PENG, M DANZINGER, R HAUBNER and B LUX - Preparation of
YBa2Cu307 x films by spray pyrolysis C2-721
Y V LAKHOTKIN and R V KUKUSHKIN - Growth mechanism and
structure peculiarities of tungsten-rhenium coatings C2-729
M S TSIRLIN and S U RYBAKOV - Influence of gas phase compo
sition on the formation of Ti-Si coatings on niobium C2-735
MICROELECTRONIC MATERIALS
M R GOULDING - The selective epitaxial growth of silicon
(Invited Lecture) C2-745
Dw- MCNEILL, Y LIANG, J H MONTGOMERY, H S GAMBLE and B M ARMSTRONG - Epitaxial silicon growth by rapid thermal
CVD C2-779
XIX
R KIRCHER, M FURUNO, J MUROTA and S ONO - Low-temperature
epitaxy and in-situ doping of silicon films C2-787
J MUROTA, M KATO, R KIRCHER and S ONO - Low-temperature
silicon and germanium CVD in ultraclean environment C2-795
J MUROTA, M SAKURABA, N MIKOSHIBA and S ONO - Control of
germanium atomic layer formation on silicon using flash heat
ing in germanium CVD C2-803 •
W AHMED, R D PILKINGTON and D B MEAKIN - UHV chemical
vapour deposition of undoped and in-situ doped polysilicon
films C2-809
M SARRET, A LIBA, 0 BONNAUD, M MOKHTARI and B FORTIN -
Conditions for obtaining in-situ phosphorus doped LPCVD poly
silicon layers with high conductivity onto glass substrates C2-817
F H RUDDELL, B M ARMSTRONG and H S GAMBLE - Growth mecha
nisms of epitaxial silicon carbide produced using rapid
thermal CVD C2-823
H KANOH, 0 SUGIURA, S FUJIOKA, Y ARAMAKI, T HATTORI and
M MATSUMURA - Low-temperature chemical-vapor-deposition of
silicon nitride C2-831
H TREICHEL, R BRAUN, Z GABRXC, 0 SPINDLER and
A GSCHWANDTNER - Planarized low-stress oxide/nitride passiva
tion for ULSI devices C2-839
S E ALEXANDROV and A Y KOVALGIN - Remote plasma chemical
vapour deposition of silicon nitride films C2-847
C A VAN DER JEUGD, G J LEUSINK, GCAM JANSSEN and
S RADELAAR - A study on the thermodynamics and kinetics of
tungsten deposition by WF6 and GeH4 C2-849
A BOUTEVILLE, T CHARRIER, J C REMY, J PALLEAU and
J TORRES - Selective RTLPCVD of tuncisten by silane
reduction on patterned PPQ/Si wafers C2-857
K A GESHEVA, V ABROSIMOVA and G D BEISHKOV - CVD carbonyl
thin films of tungsten and molybdenum and their silicides - a
good alternative to CVD fluoride tungsten technology C2-865
E BLANQUET, N THOMAS, P SURYANARAYANA, C VAHLAS,
C BERNARD and R MADAR - Processing of WSi2 films by low
pressure chemical vapor deposition from in situ chlorination
of metal C2-873
C LAMPE-ONNERUD, A HARSTA and U JANSSON - CVD of copper
using CuCl as precursor C2-881
H DALLAPORTA, Z HAMMADI, R PIERRISNARD and A CROS -
Chemical vapor deposition of copper for microelectronic
devices based on silicon C2-889
P B GRABIEC and J M LYSKO - Microengineering - the new
application of chemical vapor deposition C2-897
XX
DIAMOND, OPTOELECTRONIC AND OTHER MATERIALS
RJM GRIFFITHS - MOCVD - the route to high performance com
pound semiconductor optoelectronic devices (Invited Lecture) C2-905
P K BACHMANN, D LEERS and D U WIECHERT - Diamond chemical
vapour deposition (Keynote Lecture) C2-907
C JOHNSTON, C F AYRES and P R CHALKER - Evaluating the
influence of growth parameters on CVD diamond deposition
using factorial analysis C2-915
S OKOLI, R HAUBNER and B LUX - Influence of the filament
material on low-pressure hot-filament CVD diamond deposition C2-923
C JOHNSTON, A CROSSLEY, A M JONES, P R CHALKER,
F L CULLEN and I M BUCKLEY-GOLDER - High temperature stress
measurements in CVD diamond films C2-931
S F MITURA - Electron significance to diamond synthesis in
plasma enhanced CVD process C2-939
A BOUMAZA, H M YATES, L JAMES, I A PATTERSON,
D J COLE-HAMILTON and J O WILLIAMS - Atmospheric pressure
metal-organic chemical vapour deposition (APMOCVD) for the
growth of ZnSe epilayers on (lOO)-GaAs substrates using
diethyl-zinc (DEZn) and hydrogen selenide (H2Se) C2-945
HLM CHANG, Y GAO, J GUO, C M FOSTER, H YOU, T J ZHANG
and D J LAM - Heteroepitaxial growth of Ti02, V02, and
Ti02 /V02 multilayers by MOCVD C2-953
W LUO, P REN, C TAN and Z TAN - Studies of ln203 - Sn
films grown by MOCVD C2-961
W LUO, C TAN, P REN and Z TAN - So (P, As or F) - doped
Sn02 films prepared by MOCVD C2-962
D GUORUI - A study of gas sensing properties of oxide multi
layer thin films C2-963
AUTHOR INDEX C2-969
|
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| author_facet | European Conference on Chemical Vapour Deposition Glasgow |
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| ctrlnum | (OCoLC)243716270 (DE-599)BVBBV004803735 |
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| genre | (DE-588)1071861417 Konferenzschrift 1991 Glasgow gnd-content |
| genre_facet | Konferenzschrift 1991 Glasgow |
| id | DE-604.BV004803735 |
| illustrated | Illustrated |
| indexdate | 2024-12-23T11:23:44Z |
| institution | BVB |
| institution_GND | (DE-588)1222817-5 |
| isbn | 2868831605 |
| language | Undetermined |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-002954346 |
| oclc_num | 243716270 |
| open_access_boolean | |
| owner | DE-12 DE-384 DE-703 DE-83 |
| owner_facet | DE-12 DE-384 DE-703 DE-83 |
| physical | XX, 984 S. graph. Darst. |
| publishDate | 1991 |
| publishDateSearch | 1991 |
| publishDateSort | 1991 |
| publisher | Ed. de Physique |
| record_format | marc |
| series2 | [Journal de physique / 4 ] |
| spellingShingle | Proceedings of the Eighth European Conference on Chemical Vapour Deposition Glasgow, Scotland, 9 - 13 September 1991 = Actes de la 8ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse Kondensationsreaktion (DE-588)4313125-6 gnd CVD-Verfahren (DE-588)4009846-1 gnd |
| subject_GND | (DE-588)4313125-6 (DE-588)4009846-1 (DE-588)1071861417 |
| title | Proceedings of the Eighth European Conference on Chemical Vapour Deposition Glasgow, Scotland, 9 - 13 September 1991 = Actes de la 8ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse |
| title_alt | Actes de la 8ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse |
| title_auth | Proceedings of the Eighth European Conference on Chemical Vapour Deposition Glasgow, Scotland, 9 - 13 September 1991 = Actes de la 8ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse |
| title_exact_search | Proceedings of the Eighth European Conference on Chemical Vapour Deposition Glasgow, Scotland, 9 - 13 September 1991 = Actes de la 8ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse |
| title_full | Proceedings of the Eighth European Conference on Chemical Vapour Deposition Glasgow, Scotland, 9 - 13 September 1991 = Actes de la 8ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse ed. by Michael L. Hitchman ... |
| title_fullStr | Proceedings of the Eighth European Conference on Chemical Vapour Deposition Glasgow, Scotland, 9 - 13 September 1991 = Actes de la 8ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse ed. by Michael L. Hitchman ... |
| title_full_unstemmed | Proceedings of the Eighth European Conference on Chemical Vapour Deposition Glasgow, Scotland, 9 - 13 September 1991 = Actes de la 8ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse ed. by Michael L. Hitchman ... |
| title_short | Proceedings of the Eighth European Conference on Chemical Vapour Deposition |
| title_sort | proceedings of the eighth european conference on chemical vapour deposition glasgow scotland 9 13 september 1991 actes de la 8eme conference europeenne sur les depots chimiques en phase gazeuse |
| title_sub | Glasgow, Scotland, 9 - 13 September 1991 = Actes de la 8ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse |
| topic | Kondensationsreaktion (DE-588)4313125-6 gnd CVD-Verfahren (DE-588)4009846-1 gnd |
| topic_facet | Kondensationsreaktion CVD-Verfahren Konferenzschrift 1991 Glasgow |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002954346&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV000018697 |
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