Laser-diode technology and applications II 16 - 19 January 1990 Los Angeles, California
Gespeichert in:
Format: | Buch |
---|---|
Sprache: | English |
Veröffentlicht: |
Bellingham, Wash.
SPIE
1990
|
Schriftenreihe: | Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE
1219 |
Schlagworte: | |
Online-Zugang: | Inhaltsverzeichnis |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
MARC
LEADER | 00000nam a2200000 cb4500 | ||
---|---|---|---|
001 | BV004302873 | ||
003 | DE-604 | ||
005 | 00000000000000.0 | ||
007 | t | ||
008 | 910321s1990 ad|| |||| 10||| engod | ||
020 | |a 0819402605 |9 0-8194-0260-5 | ||
035 | |a (OCoLC)21720683 | ||
035 | |a (DE-599)BVBBV004302873 | ||
040 | |a DE-604 |b ger |e rakddb | ||
041 | 0 | |a eng | |
049 | |a DE-91 | ||
050 | 0 | |a TA1700 | |
050 | 0 | |a TS510 | |
082 | 0 | |a 621.36/6 |2 20 | |
084 | |a ELT 332f |2 stub | ||
245 | 1 | 0 | |a Laser-diode technology and applications II |b 16 - 19 January 1990 Los Angeles, California |c Dan Botez ... chairs/eds. |
264 | 1 | |a Bellingham, Wash. |b SPIE |c 1990 | |
300 | |a XI, 542 S. |b Ill., zahlr. graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
490 | 1 | |a Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE |v 1219 | |
500 | |a Literaturangaben | ||
650 | 4 | |a Semiconductor lasers |v Congresses | |
650 | 0 | 7 | |a Laserdiode |0 (DE-588)4195920-6 |2 gnd |9 rswk-swf |
655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1990 |z Los Angeles, Calif. |2 gnd-content | |
689 | 0 | 0 | |a Laserdiode |0 (DE-588)4195920-6 |D s |
689 | 0 | |5 DE-604 | |
700 | 1 | |a Botez, Dan |e Sonstige |4 oth | |
830 | 0 | |a Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE |v 1219 |w (DE-604)BV000010887 |9 1219 | |
856 | 4 | 2 | |m Digitalisierung TU Muenchen |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002675968&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
999 | |a oai:aleph.bib-bvb.de:BVB01-002675968 |
Datensatz im Suchindex
DE-BY-TUM_call_number | 0001/91 B 35 |
---|---|
DE-BY-TUM_katkey | 517233 |
DE-BY-TUM_local_keycode | ko |
DE-BY-TUM_media_number | 040001148018 |
_version_ | 1816711562961879041 |
adam_text | LASER-DIODE TECHNOLOGY AND APPLICATIONS
II
Volume
1219
CONTENTS
Conference Commïttee
................................................................viii
Symposium Program
....................................................................
x
Introduction
..........................................................................xi
SPECIAL
SESSION: MINIATURE VISIBLE
LASERS
1219-58
670-nm
transverse-mode stabilized
InGaAlP laser
diodes
Y.
Uematsu,
G. Hatakoshi, M. Ishikawa, M.
Okajima, Toshiba Corp. (Japan).....................2
1219-59
Threshold current density dependence on p-doping in AIGalnP laser
T. Aoyagi, T. Kimura,
N.
Yoshida, T. Kadowaki, T. Murakami,
N.
Kaneno, Y. Seiwa,
K. Mizuguchi, W. Susaki, Mitsubishi Electric Corp. (Japan)
...................................8
1219-60
Progress in self-locking, externally doubled diode lasers
G. J.
Dixon, Amoco Laser Co
........................................................... 16
1219-62
Frequency upconversion of semiconductor diode lasers
W. Lenth, W. J. Kozlovsky, R. M. Macfarlane, W. P. Risk,
ШМ
/Almaden
Research Ctr
..........21
SESSION
1 QUANTUM
WELL SEMICONDUCTOR LASER DEVICES
1219-01
InGaAs-GaAs strained-layer quantum-well heterostructure lasers (Invited Paper)
J. J. Coleman, P. K. York, K. J. Beernink, Univ. of Illinois/Urbana-Champaign;
R. G. Waters, McDonnell Douglas Electronic Systems Co
....................................32
1219-02
Characteristics of high-power InGaAs/AlGaAs laser diodes
D. F. Welch, Spectra Diode Labs., Inc.;
С
F. Schaus, S. Sun, Univ.
of New Mexico;
M. Cardinal, W. S.
Streifer,
D. R.
Scifres, Spectra Diode Labs.,
Inc
............................37
1219-03
Operating characteristics of strained InGaAs/AlGaAs quantum-well lasers
(Invited Paper)
D. P.
Bour,
R. U. Martínelli, G.
A. Evans,
Ν.
W.
Carlson,
D.
В.
Gilbert,
M.
Effenberg,
David
Sarnoff
Research Ctr
.............................................................43
1219-04
Strained-layer quantum-well
lasers
grown by molecular beam epitaxy
for longer wavelength high-speed applications (Invited Paper)
W. J.
Schaff,
S. D. Ofťsey, P. J. Tasker, L. F. Eastman, S. McKernan, C. B.
Carter,
Cornell Univ
.........................................................................57
1219-05
Monolithically stacked quantum-well lasers
R. G.
Waters,
Y. C.
Chen,
R. J.
Dalby,
McDonnell Douglas Electronic Systems Co
...............69
1219-06
Low-threshold current coplanar vertical injection laser diode for
optoelectronic integrated circuits
S. Takahashi, K. Goto, H. Uesugi, H. Nishiguchi, E. Omura, H. Namizaki, Mitsubishi
Electric Corp. (Japan)
..................................................................79
SESSION
2
HIGH-POWER SEMICONDUCTOR OPTICAL SOURCES:
SINGLE-ELEMENT DEVICES
1219-07
High-power single emitters for coherent optical communication (Invited Paper)
E. S. Kintzer, L. B. Mercer,
S. B.
Alexander, Lincoln Lab./MIT.
..............................86
1219-08
High-power GalnAeP laser diodes on p-type substrate (Invited Paper)
H. Horikawa, H.
Wada,
S.
Oshiba,
К.
Yamada,
Y. Ogawa, Y. Kawai,
Oki
Electric Industry Co., Ltd. (Japan)
...................................................96
(continued)
LASER-DIODE TECHNOLOGY AND APPLICATIONS
II
Volume
1219
1219-09
Impact
of optical coating
on InP/lnGaAsP laser-diode performance at
high power
and high temperature
R. Agarwal, A. Appelbaum, K. D.
Buehring,
W.
Cheng, Rockwell International Corp
............105
1219-10
Reliability characteristics of high-power laser diodes (Invited Paper)
D. F. Welch, H.
Kung,
M.
Sakamoto,
E.
P.
Zucker,
W.
S.
Streifer,
D. R. Scifres,
Spectra Diode
Labs.,
Inc
..............................................................113
1219-11
High-power GaAlAs single-element lasers with nonabsorbing mirrors
K. Hamada, H. Naito, M.
Kume,
M.
Yuri,
H.
Shimizu, Matsushita Electronics Corp. (Japan)
......117
1219-12
Fundamental transverse mode 100-mW semiconductor laser with high reliability
T. Yamaguchi, K. Yodoshi, K. Minakuchi, Y. Inoue, K. Komeda,
N.
Tabuchi,
Y. Bessho, K. Mori, T. Niina, Sanyo Electric Co., Ltd. (Japan)
...............................126
1219-13
780-nm
high-power laser diode fabricated by metal organic chemical
vapor deposition technique
Y. Ohta, T. Yagi, H. Kagawa, H. Higuchi, K.
Tamari,
Y.
Kashimoto, Mitsubishi
Electric Corp. (Japan)
.................................................................134
1219-14
Reliability test of high-power semiconductor laser for
intersatellite
link
C.
S. Wang, K. G. Lu, H.
Firouzi,
K. Ouyang, C. J.
Hwang, Laser Diode, Inc.;
J. L. Stevenson, S. Akiba, R. A. Peters, INTELSAT
........................................138
1219-15
High-power InGaAsP/InP
superluminescent
diodes
R. J.
Fu, E.
Y.
Chan,
D. J.
Booher,
C.
Hong, Boeing
Aerospace and Electronics Co
..............150
SESSION
3
HIGH-POWER SEMICONDUCTOR OPTICAL SOURCES:
LARGE-APERTURE DEVICES
1219-16
Stabilized in-phase-mode operation from monolithic antiguided diode
laser arrays (Invited Paper)
L. J. Mawst, D.
Botez,
P. Hayashida, M.
Jansen,
G. L.
Peterson,
T. J.
Roth,
J. Z. Wilcox, J. J.
Yang,
TRW,
Inc
...................................................... 156
1219-17
Coherent radiation from a broad-area semiconductor laser in an external cavity
R. G. Waarts, A. Hardy, D. G. Mehuys, W. S.
Streifer,
D.
F.
Welch, Spectra Diode Labs., be.
... 172
1219-18
Lateral mode controlled wide-stripe lasers by modal reflector
K. Shigihara, Y. Nagai, Y. Kokubo, H. Matsubara, K. Ikeda, W. Susaki,
Mitsubishi Electric Corp. (Japan)
.......................................................179
1219-19
High-power quasi-cw linear laser-diode arrays emitting in excess of
200
W
of optical power
G. L. Harnagel, J. M.
Haden,
G. S.
Browder, Jr.,
M.
Cardinal, J. G. Endriz,
D. R. Scifres, Spectra Diode Labs.,
Inc
................................................... 186
1219-20
10-W cw, SOOO-hour-lifetkne monolithic AlGaAs laser-diode arrays
M. Sakamoto, D. F. Welch, J. G. Endriz, E. P.
Zucker,
D. R.
Scifres,
Spectra Diode Labs.,
Inc
.............................................................. 193
1219-21 1
0-amplifier coherent array based on active-integrated optics
M. S. Zediker, H. R.
Appelman,
B. G.
Clay,
J. R.
Heidel,
R.
W. Herrick,
J.
Haake, J.
Martinosky,
F. Streumph, R. A. Williams,
McDonnell Douglas
Electronic Systems Co
................................................................ 197
1219-22
Failure mechanisms in monolithic AlGaAs laser devices
W. J. Fritz, T. H.
Faltos,
J. B.
Yahl, McDonnell Douglas Electronic Systems Co
.................211
1219-55
Phaselocking of a two-dimensional laser array with random detuning
of eigenfrequencies
A. A. Golubentsev, V. V. Likhanskii, A. P. Napartovich,
I.V.
Kurchatov Institute
of Atomic Energy (USSR)
.............................................................220
LASER-DIODE TECHNOLOGY AND APPLICATIONS
II
Volume
1219
SESSION 4
SURFACE-EMITTING
LASERS
1219-23
Recent
developments in surface-emitting
distributed-feedback
arrays
S. H. Macomber, J. S.
Mott,
Hughes Danbury
Optical
Systems, Inc.; H. F.
Chung,
T. L.
Paoli,
Xerox
Palo Alto
Research Ctr
................................................228
1219-24
Coherent cw operation of
2-D
grating surface-emitting
diode laser
arrays
M. Lurie, G. A. Evans,
N.
W.
Carlson,
D.
P.
Bour,
R.
Amantea,
J. M.
Hammer,
T. F. Bibby,
D.
В.
Gilbert, S.
К.
Liew, David Sarnoff Research Ctr
............................233
1219-25
Optical characteristics of
multiple
grating surface-emitting semiconductor lasers
R.
Parke,
R.
G.
Waarts,
D.
F. Welch,
A. Hardy, W. S.
Streifer,
Spectra
Diode Labs.,
Inc..............................................................
242
1219-26
Grating-coupled surface emitters: sensitivity to length-induced phase variations
A. Hardy, D. F. Welch, R.
Parke,
R.
G.
Waarts,
D.
G. Mehuys,
W.
S.
Streifer,
D. R.
Scifres, Spectra Diode Labs., be
...................................................246
1219-27
High-power hybrid two-dimensional surface-emitting AlGaAs diode laser arrays
J. P. Donnelly, K.
Rauschenbach,
С.
A. Wang,
R. J.
Bailey,
J. N.
Walpole,
L. J. Missaggia, J. D. Woodhouse, H. K.
Choi,
F. J. O Donnell, V. Diadiuk, Lincoln Lab./MIT.
... 255
1219-28
Mode
stability
and spectral properties of resonant periodic gain
surface-emitting lasers
M. Mahbobzadeh, M. Y. Raja, J. G. Mclnerney,
С
F. Schaus, S. R. Brueck,
Univ. of New Mexico
.................................................................264
1219-29
Fabrication of microlenses in compound semiconductors and monolithic
integration with diode lasers
Z. Liau, J.
N.
Walpole, V. Diadiuk, D. E. Mull, L. J. Missaggia, Lincoln Lab./MIT
...............276
1219-57
Vertical cavity surface-emitting semiconductor lasers with injection laser pumping
D. L. McDaniel, Jr.,
J. G.
Mclnerney,
M. Y. Raja, C. F.
Schaus,
S. R.
Brueck,
Univ. of New Mexico
.................................................................284
SESSION
5
SEMICONDUCTOR LASER ADVANCED PROCESSING, PACKAGING,
AND HIGH-SPEED TECHNOLOGY
1219-30
Recent developments in optoelectronic device processing (Invited Paper)
A. Appelbaum, Rockwell International Corp
.............................................294
1219-32
Improvement of high-power characteristics of 780-nm AlGaAs laser
diode by (NH4)2S facet treatment
H. Kawanishi, H. Ohno, T. Morimoto, S. Kaneiwa,
N.
Miyauchi, H. Hayashi, Y. Akagi,
Y. Nakajima, T. Hijikata, Sharp Corp. (JaP&n)
.............................................309
1219-33
Effect of active layer doping on static and dynamic performance
of
1.3
-μηη
InGaAsP lasers with semi-insulating current blocking layers
W. Cheng, K. D. Buehring, R. T. Huang, A. Appelbaum,
D. S.
Renner,
Rockwell
International Corp.; C. B.
Su,
Texas A&.M Univ
..........................................317
1219-34
U-groove distributed-f eedback lasers
С
Jiang, R. Elliot, D. Wolf, A. Appelbaum,
D. S.
Renner,
Rockwell International Corp
..........324
1219-35
Stackable wafer-thin coolers for high-power laser-diode arrays
R. E. Hendron,
С. С
Becker, J. L. Levy, J. E. Jackson, McDonnell Douglas
Electronic Systems Co
................................................................330
(continued)
LASER-DIODE TECHNOLOGY AND APPLICATIONS
II
Volume
1219
SESSION 6
LASER DIODES
OPERATING IN AN EXTERNAL OPTICAL CAVITY
1219-36
Nonlinear optical techniques for obtaining high brightness from diode lasers
(Invited Paper)
I, C. McMichael, P. A. Yeh, M. Khoshnevisan, P. H. Beckwith, W. R. Christian,
Rockwell International Science Ctr
......................................................342
1219-37
Ultrabroadband tunable external-cavity quantum-well lasers
D. G. Mehuys, L.
Eng,
M.
Mittelstein,
T. R.
Chen, A. Yariv, California Institute
of Technology
.......................................................................358
1219-38
External-cavity coherent operation of InGaAsP buried-hetereostructure
laser array
V. Diadiuk, Z, Liau,
J. N. Walpole, J. W.
Caunt,
R. C
Williamson, Lincoln Lab./MIT
..........366
1219-39
Effects of liquid crystals on diffractive coupling in a diode laser external cavity
J. M.
Finían,
S. M.
Hamilton,
GE
Astro-Space
Div.; J. R.
Leger,
Lincoln Lab./MIT.
.............377
1219-40
Low
wavefront
aberration
microcollimated laser
diode
S.
Ogata,
M.
Tanigami,
H.
Sekii,
T. Maeda, H. Goto, K. Imanaka,
Omron
Corp. (Japan)
.................................................................385
SESSION
7
SEMICONDUCTOR
LASER
MODELING AND
DESIGN
1219-42
Design
and optimization of high-frequency
diode lasers
(Invited
Paper)
C. В.
Su, Texas A&.M Univ
...........................................................396
1219-43
Experimental measurements of
modal
transients and theoretical thermal
modeling of laser diodes
W. L. Lippincott, A. E. Clement, W. C. Collins, Naval Research Lab
.........................401
1219-44
Polarization-dependent gain and gain saturation in strained semiconductor lasers
B. Yu, J. Liu, Univ. of California/Los Angeles; J. S. LaCourse, GTE Labs. Inc.
.................417
1219-45
Mode control of broad-area semiconductor lasers using unstable resonators
M. L.
Tilton, Rockwell International Power Systems;
G. C.
Dente,
G.C.D. Associates; A. H. Paxton, Mission Research Corp
...................................423
1219-46
Reflection, transmission, and scattering at an integrated diode
laser-waveguide interface
G. L. Peterson, TRW,
Inc
.............................................................435
SESSION
8
APPLICATIONS OF SEMICONDUCTOR LASERS
1219-47
Diode laser radar: applications and technology (Invited Paper)
j. D. McClure, Boeing Aerospace and Electronics Co
.......................................446
1219-48
Applications of optical feedback in laser diodes (Invited Paper)
P. J.
de Groot,
Hughes Danbury Optical Systems
..........................................457
1219-49
High-precision fiber-optic position sensing using diode laser
radar techniques
G. L. Abbas, W. R. Babbitt,
M. de La Chapelle,
M. L.
Flesnner,
J. D. McClure,
E. J. Vertatschitsch, Boeing
Aerospace
and Electronics
Co
...................................468
1219-50
Proposed ranging technique with coherent optical radiation from laser diode
using phase shift method
K. T.
Grattar», A. W.
Palmer,
B. T.
Meggitt, City Univ. (UK)
................................480
1219-51
Wavelength control of a diode laser for distance-measuring
interferometry
F.
Crosdale,
R.
j.
Falum,
Eastman Kodak Co
..............................................490
1219-52
High-power Later diodes for volume
applications
D. L.
Begłey,
Ball Aerospace Systems Group
..............................................504
LASER-DIODE TECHNOLOGY AND APPLICATIONS
II
Volume
1219
1219-61
Comparison of
symmetrie and asymmetrie
laser diodes for communication system
A. S. Daryoush, T. Ni, Drexel Univ
.....................................................510
1219-53
Switching technology from
dc
to GHz using 2-D semiconductor laser arrays
A. Rosen, P. J. Stabile, W. M. Janton, A. M.
Gombár,
David Sarnoff Research Ctr.;
J.
Delmaster,
R.
Hurwitz,
General Electric Co.; P. R. Herczfeld,
A. Bahasadri,
Drexel Univ
......................................................,,.................518
1219-54
Differential absorption laser ranging at the oxygen A-band
R. J. Smith, Ball Aerospace Systems Group
...............................................525
1219-56
Light coupling between LD and optical fiber using high NA planar microlens
M. Oikawa, H.
Němoto,
К.
Hamanaka,
T.
Kishimoto, Nippon Sheet Glass Co., Ltd. (Japan)
......532
Addendum
.........................................................................539
Author Index
.......................................................................540
|
any_adam_object | 1 |
building | Verbundindex |
bvnumber | BV004302873 |
callnumber-first | T - Technology |
callnumber-label | TA1700 |
callnumber-raw | TA1700 TS510 |
callnumber-search | TA1700 TS510 |
callnumber-sort | TA 41700 |
callnumber-subject | TA - General and Civil Engineering |
classification_tum | ELT 332f |
ctrlnum | (OCoLC)21720683 (DE-599)BVBBV004302873 |
dewey-full | 621.36/6 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.36/6 |
dewey-search | 621.36/6 |
dewey-sort | 3621.36 16 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Book |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01657nam a2200409 cb4500</leader><controlfield tag="001">BV004302873</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">910321s1990 ad|| |||| 10||| engod</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0819402605</subfield><subfield code="9">0-8194-0260-5</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)21720683</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV004302873</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TA1700</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TS510</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.36/6</subfield><subfield code="2">20</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 332f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Laser-diode technology and applications II</subfield><subfield code="b">16 - 19 January 1990 Los Angeles, California</subfield><subfield code="c">Dan Botez ... chairs/eds.</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Bellingham, Wash.</subfield><subfield code="b">SPIE</subfield><subfield code="c">1990</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XI, 542 S.</subfield><subfield code="b">Ill., zahlr. graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE</subfield><subfield code="v">1219</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Literaturangaben</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductor lasers</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Laserdiode</subfield><subfield code="0">(DE-588)4195920-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="y">1990</subfield><subfield code="z">Los Angeles, Calif.</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Laserdiode</subfield><subfield code="0">(DE-588)4195920-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Botez, Dan</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE</subfield><subfield code="v">1219</subfield><subfield code="w">(DE-604)BV000010887</subfield><subfield code="9">1219</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">Digitalisierung TU Muenchen</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002675968&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-002675968</subfield></datafield></record></collection> |
genre | (DE-588)1071861417 Konferenzschrift 1990 Los Angeles, Calif. gnd-content |
genre_facet | Konferenzschrift 1990 Los Angeles, Calif. |
id | DE-604.BV004302873 |
illustrated | Illustrated |
indexdate | 2024-11-25T17:10:36Z |
institution | BVB |
isbn | 0819402605 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-002675968 |
oclc_num | 21720683 |
open_access_boolean | |
owner | DE-91 DE-BY-TUM |
owner_facet | DE-91 DE-BY-TUM |
physical | XI, 542 S. Ill., zahlr. graph. Darst. |
publishDate | 1990 |
publishDateSearch | 1990 |
publishDateSort | 1990 |
publisher | SPIE |
record_format | marc |
series | Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE |
series2 | Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE |
spellingShingle | Laser-diode technology and applications II 16 - 19 January 1990 Los Angeles, California Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE Semiconductor lasers Congresses Laserdiode (DE-588)4195920-6 gnd |
subject_GND | (DE-588)4195920-6 (DE-588)1071861417 |
title | Laser-diode technology and applications II 16 - 19 January 1990 Los Angeles, California |
title_auth | Laser-diode technology and applications II 16 - 19 January 1990 Los Angeles, California |
title_exact_search | Laser-diode technology and applications II 16 - 19 January 1990 Los Angeles, California |
title_full | Laser-diode technology and applications II 16 - 19 January 1990 Los Angeles, California Dan Botez ... chairs/eds. |
title_fullStr | Laser-diode technology and applications II 16 - 19 January 1990 Los Angeles, California Dan Botez ... chairs/eds. |
title_full_unstemmed | Laser-diode technology and applications II 16 - 19 January 1990 Los Angeles, California Dan Botez ... chairs/eds. |
title_short | Laser-diode technology and applications II |
title_sort | laser diode technology and applications ii 16 19 january 1990 los angeles california |
title_sub | 16 - 19 January 1990 Los Angeles, California |
topic | Semiconductor lasers Congresses Laserdiode (DE-588)4195920-6 gnd |
topic_facet | Semiconductor lasers Congresses Laserdiode Konferenzschrift 1990 Los Angeles, Calif. |
url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002675968&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
volume_link | (DE-604)BV000010887 |
work_keys_str_mv | AT botezdan laserdiodetechnologyandapplicationsii1619january1990losangelescalifornia |