Laser-diode technology and applications II 16 - 19 January 1990 Los Angeles, California

Gespeichert in:
Bibliographische Detailangaben
Format: Buch
Sprache:English
Veröffentlicht: Bellingham, Wash. SPIE 1990
Schriftenreihe:Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE 1219
Schlagworte:
Online-Zugang:Inhaltsverzeichnis
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!

MARC

LEADER 00000nam a2200000 cb4500
001 BV004302873
003 DE-604
005 00000000000000.0
007 t
008 910321s1990 ad|| |||| 10||| engod
020 |a 0819402605  |9 0-8194-0260-5 
035 |a (OCoLC)21720683 
035 |a (DE-599)BVBBV004302873 
040 |a DE-604  |b ger  |e rakddb 
041 0 |a eng 
049 |a DE-91 
050 0 |a TA1700 
050 0 |a TS510 
082 0 |a 621.36/6  |2 20 
084 |a ELT 332f  |2 stub 
245 1 0 |a Laser-diode technology and applications II  |b 16 - 19 January 1990 Los Angeles, California  |c Dan Botez ... chairs/eds. 
264 1 |a Bellingham, Wash.  |b SPIE  |c 1990 
300 |a XI, 542 S.  |b Ill., zahlr. graph. Darst. 
336 |b txt  |2 rdacontent 
337 |b n  |2 rdamedia 
338 |b nc  |2 rdacarrier 
490 1 |a Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE  |v 1219 
500 |a Literaturangaben 
650 4 |a Semiconductor lasers  |v Congresses 
650 0 7 |a Laserdiode  |0 (DE-588)4195920-6  |2 gnd  |9 rswk-swf 
655 7 |0 (DE-588)1071861417  |a Konferenzschrift  |y 1990  |z Los Angeles, Calif.  |2 gnd-content 
689 0 0 |a Laserdiode  |0 (DE-588)4195920-6  |D s 
689 0 |5 DE-604 
700 1 |a Botez, Dan  |e Sonstige  |4 oth 
830 0 |a Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE  |v 1219  |w (DE-604)BV000010887  |9 1219 
856 4 2 |m Digitalisierung TU Muenchen  |q application/pdf  |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002675968&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA  |3 Inhaltsverzeichnis 
999 |a oai:aleph.bib-bvb.de:BVB01-002675968 

Datensatz im Suchindex

DE-BY-TUM_call_number 0001/91 B 35
DE-BY-TUM_katkey 517233
DE-BY-TUM_local_keycode ko
DE-BY-TUM_media_number 040001148018
_version_ 1816711562961879041
adam_text LASER-DIODE TECHNOLOGY AND APPLICATIONS II Volume 1219 CONTENTS Conference Commïttee ................................................................viii Symposium Program .................................................................... x Introduction ..........................................................................xi SPECIAL SESSION: MINIATURE VISIBLE LASERS 1219-58 670-nm transverse-mode stabilized InGaAlP laser diodes Y. Uematsu, G. Hatakoshi, M. Ishikawa, M. Okajima, Toshiba Corp. (Japan).....................2 1219-59 Threshold current density dependence on p-doping in AIGalnP laser T. Aoyagi, T. Kimura, N. Yoshida, T. Kadowaki, T. Murakami, N. Kaneno, Y. Seiwa, K. Mizuguchi, W. Susaki, Mitsubishi Electric Corp. (Japan) ...................................8 1219-60 Progress in self-locking, externally doubled diode lasers G. J. Dixon, Amoco Laser Co ........................................................... 16 1219-62 Frequency upconversion of semiconductor diode lasers W. Lenth, W. J. Kozlovsky, R. M. Macfarlane, W. P. Risk, ШМ /Almaden Research Ctr ..........21 SESSION 1 QUANTUM WELL SEMICONDUCTOR LASER DEVICES 1219-01 InGaAs-GaAs strained-layer quantum-well heterostructure lasers (Invited Paper) J. J. Coleman, P. K. York, K. J. Beernink, Univ. of Illinois/Urbana-Champaign; R. G. Waters, McDonnell Douglas Electronic Systems Co ....................................32 1219-02 Characteristics of high-power InGaAs/AlGaAs laser diodes D. F. Welch, Spectra Diode Labs., Inc.; С F. Schaus, S. Sun, Univ. of New Mexico; M. Cardinal, W. S. Streifer, D. R. Scifres, Spectra Diode Labs., Inc ............................37 1219-03 Operating characteristics of strained InGaAs/AlGaAs quantum-well lasers (Invited Paper) D. P. Bour, R. U. Martínelli, G. A. Evans, Ν. W. Carlson, D. В. Gilbert, M. Effenberg, David Sarnoff Research Ctr .............................................................43 1219-04 Strained-layer quantum-well lasers grown by molecular beam epitaxy for longer wavelength high-speed applications (Invited Paper) W. J. Schaff, S. D. Ofťsey, P. J. Tasker, L. F. Eastman, S. McKernan, C. B. Carter, Cornell Univ .........................................................................57 1219-05 Monolithically stacked quantum-well lasers R. G. Waters, Y. C. Chen, R. J. Dalby, McDonnell Douglas Electronic Systems Co ...............69 1219-06 Low-threshold current coplanar vertical injection laser diode for optoelectronic integrated circuits S. Takahashi, K. Goto, H. Uesugi, H. Nishiguchi, E. Omura, H. Namizaki, Mitsubishi Electric Corp. (Japan) ..................................................................79 SESSION 2 HIGH-POWER SEMICONDUCTOR OPTICAL SOURCES: SINGLE-ELEMENT DEVICES 1219-07 High-power single emitters for coherent optical communication (Invited Paper) E. S. Kintzer, L. B. Mercer, S. B. Alexander, Lincoln Lab./MIT. ..............................86 1219-08 High-power GalnAeP laser diodes on p-type substrate (Invited Paper) H. Horikawa, H. Wada, S. Oshiba, К. Yamada, Y. Ogawa, Y. Kawai, Oki Electric Industry Co., Ltd. (Japan) ...................................................96 (continued) LASER-DIODE TECHNOLOGY AND APPLICATIONS II Volume 1219 1219-09 Impact of optical coating on InP/lnGaAsP laser-diode performance at high power and high temperature R. Agarwal, A. Appelbaum, K. D. Buehring, W. Cheng, Rockwell International Corp ............105 1219-10 Reliability characteristics of high-power laser diodes (Invited Paper) D. F. Welch, H. Kung, M. Sakamoto, E. P. Zucker, W. S. Streifer, D. R. Scifres, Spectra Diode Labs., Inc ..............................................................113 1219-11 High-power GaAlAs single-element lasers with nonabsorbing mirrors K. Hamada, H. Naito, M. Kume, M. Yuri, H. Shimizu, Matsushita Electronics Corp. (Japan) ......117 1219-12 Fundamental transverse mode 100-mW semiconductor laser with high reliability T. Yamaguchi, K. Yodoshi, K. Minakuchi, Y. Inoue, K. Komeda, N. Tabuchi, Y. Bessho, K. Mori, T. Niina, Sanyo Electric Co., Ltd. (Japan) ...............................126 1219-13 780-nm high-power laser diode fabricated by metal organic chemical vapor deposition technique Y. Ohta, T. Yagi, H. Kagawa, H. Higuchi, K. Tamari, Y. Kashimoto, Mitsubishi Electric Corp. (Japan) .................................................................134 1219-14 Reliability test of high-power semiconductor laser for intersatellite link C. S. Wang, K. G. Lu, H. Firouzi, K. Ouyang, C. J. Hwang, Laser Diode, Inc.; J. L. Stevenson, S. Akiba, R. A. Peters, INTELSAT ........................................138 1219-15 High-power InGaAsP/InP superluminescent diodes R. J. Fu, E. Y. Chan, D. J. Booher, C. Hong, Boeing Aerospace and Electronics Co ..............150 SESSION 3 HIGH-POWER SEMICONDUCTOR OPTICAL SOURCES: LARGE-APERTURE DEVICES 1219-16 Stabilized in-phase-mode operation from monolithic antiguided diode laser arrays (Invited Paper) L. J. Mawst, D. Botez, P. Hayashida, M. Jansen, G. L. Peterson, T. J. Roth, J. Z. Wilcox, J. J. Yang, TRW, Inc ...................................................... 156 1219-17 Coherent radiation from a broad-area semiconductor laser in an external cavity R. G. Waarts, A. Hardy, D. G. Mehuys, W. S. Streifer, D. F. Welch, Spectra Diode Labs., be. ... 172 1219-18 Lateral mode controlled wide-stripe lasers by modal reflector K. Shigihara, Y. Nagai, Y. Kokubo, H. Matsubara, K. Ikeda, W. Susaki, Mitsubishi Electric Corp. (Japan) .......................................................179 1219-19 High-power quasi-cw linear laser-diode arrays emitting in excess of 200 W of optical power G. L. Harnagel, J. M. Haden, G. S. Browder, Jr., M. Cardinal, J. G. Endriz, D. R. Scifres, Spectra Diode Labs., Inc ................................................... 186 1219-20 10-W cw, SOOO-hour-lifetkne monolithic AlGaAs laser-diode arrays M. Sakamoto, D. F. Welch, J. G. Endriz, E. P. Zucker, D. R. Scifres, Spectra Diode Labs., Inc .............................................................. 193 1219-21 1 0-amplifier coherent array based on active-integrated optics M. S. Zediker, H. R. Appelman, B. G. Clay, J. R. Heidel, R. W. Herrick, J. Haake, J. Martinosky, F. Streumph, R. A. Williams, McDonnell Douglas Electronic Systems Co ................................................................ 197 1219-22 Failure mechanisms in monolithic AlGaAs laser devices W. J. Fritz, T. H. Faltos, J. B. Yahl, McDonnell Douglas Electronic Systems Co .................211 1219-55 Phaselocking of a two-dimensional laser array with random detuning of eigenfrequencies A. A. Golubentsev, V. V. Likhanskii, A. P. Napartovich, I.V. Kurchatov Institute of Atomic Energy (USSR) .............................................................220 LASER-DIODE TECHNOLOGY AND APPLICATIONS II Volume 1219 SESSION 4 SURFACE-EMITTING LASERS 1219-23 Recent developments in surface-emitting distributed-feedback arrays S. H. Macomber, J. S. Mott, Hughes Danbury Optical Systems, Inc.; H. F. Chung, T. L. Paoli, Xerox Palo Alto Research Ctr ................................................228 1219-24 Coherent cw operation of 2-D grating surface-emitting diode laser arrays M. Lurie, G. A. Evans, N. W. Carlson, D. P. Bour, R. Amantea, J. M. Hammer, T. F. Bibby, D. В. Gilbert, S. К. Liew, David Sarnoff Research Ctr ............................233 1219-25 Optical characteristics of multiple grating surface-emitting semiconductor lasers R. Parke, R. G. Waarts, D. F. Welch, A. Hardy, W. S. Streifer, Spectra Diode Labs., Inc.............................................................. 242 1219-26 Grating-coupled surface emitters: sensitivity to length-induced phase variations A. Hardy, D. F. Welch, R. Parke, R. G. Waarts, D. G. Mehuys, W. S. Streifer, D. R. Scifres, Spectra Diode Labs., be ...................................................246 1219-27 High-power hybrid two-dimensional surface-emitting AlGaAs diode laser arrays J. P. Donnelly, K. Rauschenbach, С. A. Wang, R. J. Bailey, J. N. Walpole, L. J. Missaggia, J. D. Woodhouse, H. K. Choi, F. J. O Donnell, V. Diadiuk, Lincoln Lab./MIT. ... 255 1219-28 Mode stability and spectral properties of resonant periodic gain surface-emitting lasers M. Mahbobzadeh, M. Y. Raja, J. G. Mclnerney, С F. Schaus, S. R. Brueck, Univ. of New Mexico .................................................................264 1219-29 Fabrication of microlenses in compound semiconductors and monolithic integration with diode lasers Z. Liau, J. N. Walpole, V. Diadiuk, D. E. Mull, L. J. Missaggia, Lincoln Lab./MIT ...............276 1219-57 Vertical cavity surface-emitting semiconductor lasers with injection laser pumping D. L. McDaniel, Jr., J. G. Mclnerney, M. Y. Raja, C. F. Schaus, S. R. Brueck, Univ. of New Mexico .................................................................284 SESSION 5 SEMICONDUCTOR LASER ADVANCED PROCESSING, PACKAGING, AND HIGH-SPEED TECHNOLOGY 1219-30 Recent developments in optoelectronic device processing (Invited Paper) A. Appelbaum, Rockwell International Corp .............................................294 1219-32 Improvement of high-power characteristics of 780-nm AlGaAs laser diode by (NH4)2S facet treatment H. Kawanishi, H. Ohno, T. Morimoto, S. Kaneiwa, N. Miyauchi, H. Hayashi, Y. Akagi, Y. Nakajima, T. Hijikata, Sharp Corp. (JaP&n) .............................................309 1219-33 Effect of active layer doping on static and dynamic performance of 1.3 -μηη InGaAsP lasers with semi-insulating current blocking layers W. Cheng, K. D. Buehring, R. T. Huang, A. Appelbaum, D. S. Renner, Rockwell International Corp.; C. B. Su, Texas A&.M Univ ..........................................317 1219-34 U-groove distributed-f eedback lasers С Jiang, R. Elliot, D. Wolf, A. Appelbaum, D. S. Renner, Rockwell International Corp ..........324 1219-35 Stackable wafer-thin coolers for high-power laser-diode arrays R. E. Hendron, С. С Becker, J. L. Levy, J. E. Jackson, McDonnell Douglas Electronic Systems Co ................................................................330 (continued) LASER-DIODE TECHNOLOGY AND APPLICATIONS II Volume 1219 SESSION 6 LASER DIODES OPERATING IN AN EXTERNAL OPTICAL CAVITY 1219-36 Nonlinear optical techniques for obtaining high brightness from diode lasers (Invited Paper) I, C. McMichael, P. A. Yeh, M. Khoshnevisan, P. H. Beckwith, W. R. Christian, Rockwell International Science Ctr ......................................................342 1219-37 Ultrabroadband tunable external-cavity quantum-well lasers D. G. Mehuys, L. Eng, M. Mittelstein, T. R. Chen, A. Yariv, California Institute of Technology .......................................................................358 1219-38 External-cavity coherent operation of InGaAsP buried-hetereostructure laser array V. Diadiuk, Z, Liau, J. N. Walpole, J. W. Caunt, R. C Williamson, Lincoln Lab./MIT ..........366 1219-39 Effects of liquid crystals on diffractive coupling in a diode laser external cavity J. M. Finían, S. M. Hamilton, GE Astro-Space Div.; J. R. Leger, Lincoln Lab./MIT. .............377 1219-40 Low wavefront aberration microcollimated laser diode S. Ogata, M. Tanigami, H. Sekii, T. Maeda, H. Goto, K. Imanaka, Omron Corp. (Japan) .................................................................385 SESSION 7 SEMICONDUCTOR LASER MODELING AND DESIGN 1219-42 Design and optimization of high-frequency diode lasers (Invited Paper) C. В. Su, Texas A&.M Univ ...........................................................396 1219-43 Experimental measurements of modal transients and theoretical thermal modeling of laser diodes W. L. Lippincott, A. E. Clement, W. C. Collins, Naval Research Lab .........................401 1219-44 Polarization-dependent gain and gain saturation in strained semiconductor lasers B. Yu, J. Liu, Univ. of California/Los Angeles; J. S. LaCourse, GTE Labs. Inc. .................417 1219-45 Mode control of broad-area semiconductor lasers using unstable resonators M. L. Tilton, Rockwell International Power Systems; G. C. Dente, G.C.D. Associates; A. H. Paxton, Mission Research Corp ...................................423 1219-46 Reflection, transmission, and scattering at an integrated diode laser-waveguide interface G. L. Peterson, TRW, Inc .............................................................435 SESSION 8 APPLICATIONS OF SEMICONDUCTOR LASERS 1219-47 Diode laser radar: applications and technology (Invited Paper) j. D. McClure, Boeing Aerospace and Electronics Co .......................................446 1219-48 Applications of optical feedback in laser diodes (Invited Paper) P. J. de Groot, Hughes Danbury Optical Systems ..........................................457 1219-49 High-precision fiber-optic position sensing using diode laser radar techniques G. L. Abbas, W. R. Babbitt, M. de La Chapelle, M. L. Flesnner, J. D. McClure, E. J. Vertatschitsch, Boeing Aerospace and Electronics Co ...................................468 1219-50 Proposed ranging technique with coherent optical radiation from laser diode using phase shift method K. T. Grattar», A. W. Palmer, B. T. Meggitt, City Univ. (UK) ................................480 1219-51 Wavelength control of a diode laser for distance-measuring interferometry F. Crosdale, R. j. Falum, Eastman Kodak Co ..............................................490 1219-52 High-power Later diodes for volume applications D. L. Begłey, Ball Aerospace Systems Group ..............................................504 LASER-DIODE TECHNOLOGY AND APPLICATIONS II Volume 1219 1219-61 Comparison of symmetrie and asymmetrie laser diodes for communication system A. S. Daryoush, T. Ni, Drexel Univ .....................................................510 1219-53 Switching technology from dc to GHz using 2-D semiconductor laser arrays A. Rosen, P. J. Stabile, W. M. Janton, A. M. Gombár, David Sarnoff Research Ctr.; J. Delmaster, R. Hurwitz, General Electric Co.; P. R. Herczfeld, A. Bahasadri, Drexel Univ ......................................................,,.................518 1219-54 Differential absorption laser ranging at the oxygen A-band R. J. Smith, Ball Aerospace Systems Group ...............................................525 1219-56 Light coupling between LD and optical fiber using high NA planar microlens M. Oikawa, H. Němoto, К. Hamanaka, T. Kishimoto, Nippon Sheet Glass Co., Ltd. (Japan) ......532 Addendum .........................................................................539 Author Index .......................................................................540
any_adam_object 1
building Verbundindex
bvnumber BV004302873
callnumber-first T - Technology
callnumber-label TA1700
callnumber-raw TA1700
TS510
callnumber-search TA1700
TS510
callnumber-sort TA 41700
callnumber-subject TA - General and Civil Engineering
classification_tum ELT 332f
ctrlnum (OCoLC)21720683
(DE-599)BVBBV004302873
dewey-full 621.36/6
dewey-hundreds 600 - Technology (Applied sciences)
dewey-ones 621 - Applied physics
dewey-raw 621.36/6
dewey-search 621.36/6
dewey-sort 3621.36 16
dewey-tens 620 - Engineering and allied operations
discipline Elektrotechnik
Elektrotechnik / Elektronik / Nachrichtentechnik
format Book
fullrecord <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01657nam a2200409 cb4500</leader><controlfield tag="001">BV004302873</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">910321s1990 ad|| |||| 10||| engod</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0819402605</subfield><subfield code="9">0-8194-0260-5</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)21720683</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV004302873</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TA1700</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TS510</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.36/6</subfield><subfield code="2">20</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 332f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Laser-diode technology and applications II</subfield><subfield code="b">16 - 19 January 1990 Los Angeles, California</subfield><subfield code="c">Dan Botez ... chairs/eds.</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Bellingham, Wash.</subfield><subfield code="b">SPIE</subfield><subfield code="c">1990</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XI, 542 S.</subfield><subfield code="b">Ill., zahlr. graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE</subfield><subfield code="v">1219</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Literaturangaben</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductor lasers</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Laserdiode</subfield><subfield code="0">(DE-588)4195920-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="y">1990</subfield><subfield code="z">Los Angeles, Calif.</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Laserdiode</subfield><subfield code="0">(DE-588)4195920-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Botez, Dan</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE</subfield><subfield code="v">1219</subfield><subfield code="w">(DE-604)BV000010887</subfield><subfield code="9">1219</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">Digitalisierung TU Muenchen</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&amp;doc_library=BVB01&amp;local_base=BVB01&amp;doc_number=002675968&amp;sequence=000002&amp;line_number=0001&amp;func_code=DB_RECORDS&amp;service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-002675968</subfield></datafield></record></collection>
genre (DE-588)1071861417 Konferenzschrift 1990 Los Angeles, Calif. gnd-content
genre_facet Konferenzschrift 1990 Los Angeles, Calif.
id DE-604.BV004302873
illustrated Illustrated
indexdate 2024-11-25T17:10:36Z
institution BVB
isbn 0819402605
language English
oai_aleph_id oai:aleph.bib-bvb.de:BVB01-002675968
oclc_num 21720683
open_access_boolean
owner DE-91
DE-BY-TUM
owner_facet DE-91
DE-BY-TUM
physical XI, 542 S. Ill., zahlr. graph. Darst.
publishDate 1990
publishDateSearch 1990
publishDateSort 1990
publisher SPIE
record_format marc
series Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE
series2 Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE
spellingShingle Laser-diode technology and applications II 16 - 19 January 1990 Los Angeles, California
Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE
Semiconductor lasers Congresses
Laserdiode (DE-588)4195920-6 gnd
subject_GND (DE-588)4195920-6
(DE-588)1071861417
title Laser-diode technology and applications II 16 - 19 January 1990 Los Angeles, California
title_auth Laser-diode technology and applications II 16 - 19 January 1990 Los Angeles, California
title_exact_search Laser-diode technology and applications II 16 - 19 January 1990 Los Angeles, California
title_full Laser-diode technology and applications II 16 - 19 January 1990 Los Angeles, California Dan Botez ... chairs/eds.
title_fullStr Laser-diode technology and applications II 16 - 19 January 1990 Los Angeles, California Dan Botez ... chairs/eds.
title_full_unstemmed Laser-diode technology and applications II 16 - 19 January 1990 Los Angeles, California Dan Botez ... chairs/eds.
title_short Laser-diode technology and applications II
title_sort laser diode technology and applications ii 16 19 january 1990 los angeles california
title_sub 16 - 19 January 1990 Los Angeles, California
topic Semiconductor lasers Congresses
Laserdiode (DE-588)4195920-6 gnd
topic_facet Semiconductor lasers Congresses
Laserdiode
Konferenzschrift 1990 Los Angeles, Calif.
url http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002675968&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
volume_link (DE-604)BV000010887
work_keys_str_mv AT botezdan laserdiodetechnologyandapplicationsii1619january1990losangelescalifornia