Anodic oxide films

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1. Verfasser: Young, Lawrence (VerfasserIn)
Format: Buch
Sprache:English
Veröffentlicht: London [u.a.] Academic Press 1961
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Datensatz im Suchindex

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adam_text ANODIC OXIDE FILMS By L YOUNG British Columbia Research Council, University of British Columbia, Vancouver, British Columbia, Canada ACADEMIC PRESS LONDON AND NEW YORK CONTENTS PAGE PREFACEV 1 INTRODUCTION 1 01 Stabilization of reactive metals by thin oxide films 1 1 02 Growth of film induced by anodic polarization 1 1 03 Metals illustrating the spectrum of anodic behaviour 2 2 GENERAL CHARACTERISTICS OF THE FILM-FORMING METALS: THE RELATION BETWEEN OVERPOTENTIAL AND THE FIELDS IN THE OXIDE AND ACROSS THE ] NTKRFACES 2 01 Introduction 4 2 02 Current-versus-potential characteristics at constant thickness5 2 03 Formation at constant current 6 2 04 Formation at constant potential 7 2 05 Transients 7 2 06 Overpotential and overfield 8 2 07 Empirical relations between ionic current, field and temperature in the steady state 11 3 THEORY OF GROWTH KINETICS OF ANODIC OXIDE FILMS 3 01 Introduction 13 3 02 Fundamental equation for high-field ionic conduc­ tivity13 3 03 The effective charge on the mobile ion and the effec­ tive field 17 3 04 Application of fundamental equation to anodic oxide films (steady state)—Verwey s case 18 3 05 Cabrera and Mott s case 19 3 06 General treatment including Mott s and Verwey s; systems as limiting cases 21 3 07 Dewald s case 22 3 08 Field production of Frenkel defects (steady state) 23 3 09 Transients: introduction 26 3 10 Frenkel defect theory (transients) 28 3 11 Consequences of the amorphous nature of the oxide 31 3 12 Decay of oxide overpotential on open circuit 33 3 13 Relation to the theory of the tarnishing reaction 34 3 14 Appendix: lack of overshoot of models with constant negative space charge 35 vii viii COS TENTS PAGE 4 EXPERIMENTAL TECHNIQUES :I OR PRODUCING ANODIC OXIDE FILMS ON VALVE METALS 4 01 Introduction 38 4 02 Characterization of film by formation process 38 4 03 Instrumentation for steady-state studies 39 4 04 Instrumentation for st udies of transients 41 4 05 Cell design 4 3 4 06 Techniques of surface preparation 4 5 4 07 Definition of working area 47 5 METHODS OF DETERMINING THE FILM THICKNESS 5 01 Introduction 49 5 02 Methods based on Far;i,day s law 50 5 03 Weighing methods 50 5 04 A C capacity 51 5 05 Electron diffraction method 5 1 5 06 Optical methods (non-mathematical) 52 5 07 Determination of the refractive index 55 5 08 Optics of thin films (mathematical) 5 7 6 TANTALUM I RECIPROCAL CAPACITY VERSUS POTENTIAL; EFFECTS OF PRE-EXISTING FILM; NATURE OF MOBILE SPECIES; TEMPERATURE RISE DURING ANODIZATION 6 01 Plots of reciprocal capacity versus potential 65 6 02 Effects of pre-existing f ilm on adhesion of anodic oxide to its substrate 68 6 03 Apparent lack of effect of metal/metal-oxide interface onkinetics69 6 04 Whether metal or oxygen moves and the nature of the transport process 70 6 05 Temperature rise during the formation of the anodic film 72 7 TANTALUM II DETERMINATION OF THE THICKNESS AND RE­ LATED TOPICS FOR FILMS FORMED IN DILUTE SOLUTIONS 7 01 Early work 74 7 02 Recent work 75 7 03 Combination of Faraday s law, capacity and spectro- photometric methods 78 7 04 Reflectivity in light polarized in the plane of incidence 83 8 TANTALUM III KINETICS OF FORMATION OF THE ANODIC OXIDE FILM 8 01 Introduction 88 8 02 Steady-state kinetics: variation of field strength with thickness at constanl current 88 CONTENTSix PAGE 8 03 Steady-state dependence of the field on the ionic current and temperature in dilute solutions 92 8 04 Summary of steady-state kinetics 101 8 05 Transient kinetics: introduction 101 8 06 Constant-current and constant-volta ge methods 102 8 07 A C -D C bridge method 105 8 08 Effects of annealing 105 8 09 Inadequacy of Frenkel defect model 108 8 10 Conclusions on the mechanism of film growth in dilute solution108 8 11 Concentrated and non-aqueous solutions-: charge, capacity and overpotential anomalies 110 8 12 Optical properties of films formed in concentrated H2S04 114 9 TANTALUM IV FIELD RECRYSTALLIZATION ; ANOMALIES WITH ROUGH SURFACES; DIELECTRIC-BREAKI OWN 9 01 Field recrystallization of Ta205 films 116 9 02 Anomalies with rough surfaces 121 9 03 Dielectric breakdown of oxide films on valve metals 125 10 PHOTO-EFFECTS WITH TANTALUM AND OTHER OXIDE-COATED ELECTRODES 10 01 General 129 10 02 Photo-effects with tantalum electrodes: Becquerel (photovoltaic) effect 130 10 03 Electronic photoconduction 131 10 04 Photo-induced growth 135 10 05 Explanations of photo-induced growth 138 10 06 Electroluminescence 139 11 RECTIFICATION BY VALVE METAL ELECTRODES 11 01 Introduction 141 11 02 Early work 141 11 03 Recent theories—empirical law for anodic leakage current142 11 04 The p-n junction theory 142 11 05 Weak spot theory 144 11 06 Hydrogen doping theory 145 11 07 Some electrochemical considerations 145 11 08 Fissures as the weak spots 146 11 09 Entry of carriers; rectification by flawless film 147 11 10 A C switch using tantalum electrodes 147 12 DIELECTRIC PROPERTIES OF ANODIC OXIDE FILMS ON VALVE METALS 12 01 Introduction and summary 150 CONTENTS PAGE 12 02 Some elementary considerations of measurement 150 12 03 Some definitions of terras 152 12 04 A C bridges 153 12 05 Theory of dielectric properties: introduction 155 12 06 Ionic relaxation losses 156 12 07 Losses due to defects in ionic crystals 157 12 08 Carrier diffusion 157 12 09 Experimental data for films on Al, Ta, Nb and Zr and their significance 157 12 10 Low frequencies 166 12 11 Use of capacity measurements to study mechanical condition of the film s 166 13 DIELECTRIC PROPERTIES AND IONIC CONDUCTIVITY OP OXIDE GLASSES 13 01 Introduction 171 13 02 Low-field ionic conduebion 174 13 03 Dielectric properties 175 13 04 High-field ionic conduction 177 14 ELECTROLYTIC CAPACITORS 14 01 General 181 14 02 Aluminium 182 14 03 Tantalum 183 14 04 Manganese dioxide solid capacitors 184 14 05 Metallized electrolytic capacitors 184 15 NIOBIUM 15 01 Introduction 186 15 02 Thickness, refractive index and dielectric constant 187 15 03 Kinetics of formation 190 15 04 Tantalum-niobium alloys 191 16 ALUMINIUM I POROUS FILMS 16 01 Introduction 193 16 02 Structure of porous fi] ins 193 16 03 Quantitative measurements on the formation of porous films: introduction 198 , 16 04 Metal loss 199 16 05 Coating weight and ratio 200 16 06 Oxalic and oxalic-sulphuric acid mixtures 202 16 07 Sealing of porous films 202 16 08 Mode of formation of boehmite in sealing 203 16 09 Dependence of rapidity of anodic oxidation on crystal face204 16 10 A C capacity 204 16 11 Theory of growth of pi rous films 204 16 12 Technical uses of porous films 206 CONTENTSxi PAGE 17 ALUMINIUM II NON-POROUS FILMS 17 01 Structure of films 211 17 02 Nature of the film material 212 17 03 Metal or oxygen mobility % 215 17 04 Determination of thickness 215 17 05 Kinetic studies 218 18 BERYLLIUM AND MAGNESIUM 18 01 Beryllium 222 18 02 Magnesium: introduction 223 18 03 Anodic behaviour 223 18 04 Magnesium as the negative electrode of primary cells 225 18 05 Anodic finishes 225 19 IKON 19 01 Introduction 227 19 02 Acid solution: the active electrode 228 19 03 Transition between active and passive states 230 19 04 The presence, nature and thickness of an oxide film on passive iron 233 19 05 The corrosion rate in the passive state 234 19 06 Mechanism of growth of the oxide 236 19 07 Reasons why the Flade potential is not coincident with the reversible oxide potential 238 19 08 Capacity measurements 240 19 09 Behaviour in presence of redox system 241 19 10 Iron in concentrated nitric acid: the Ostwald-Lillie nerve model 242 19 11 Passivity, inhibition and theories of passivity 243 19 12 Iron in solutions of inhibitors without applied current 244 19 13 Action of chloride ions 246 19 14 Cathodic and anodic polarization as protection against corrosion247 19 15 Reductive dissolution of the passivi! film 247 19 16 Alkaline solution 248 20 TITANIUM, ZIRCONIUM AND HAFNIUM 20 01 Titanium: introduction; behaviour as a valve metal 253 20 02 Active-passive transition and 1 he protection of titanium against corrosion by anodic polarization 255 20 03 Zirconium: introduction 257 20 04 Kinetics of formation of the anodic oxide 257 20 05 Very thin films 258 20 06 Thicker films 261 20 07 Spectrophotometry method 262 20 08 Hafnium 265 xii CONTENTS J AGE 21 CHROMIUM, MOLYBDENUM, TUNGSTEN, URANIUM, MANGAN­ ESE AND COBALT 21 01 Chromium 268 21 02 Molybdenum and tungsten: anodic behaviour 272 21 03 Growth and properties of anodic W03 films 272 21 04 Uranium 273 21 05 Manganese: anodic behaviour 274 21 06 The Mn02 electrode 274 21 07 Cobalt 275 22 PLATINUM, PALLADIUM AND XICKEL 22 01 Platinum: introductioi i 278 22 02 Charging curves 278 22 03 Transition to oxide 282 22 04 A C and D C 284 22 05 Nature of oxides • 284 22 06 Open-circuit potential 285 22 07 Photo-effects 285 22 08 Effect of surface conditions on electron-transfer re­ actions286 22 09 Effect of surface condition on friction 287 22 10 Palladium 287 22 11 Nickel: introduction 288 22 12 Acid solution 289 22 13 Alkaline solution 290 23 GOLD, SILVER AND COPPER 23 01 Gold: introduction 297 23 02 Chloride solutions 297 23 03 Other solutions 298 23 04 Silver: introduction 302 23 05 Alkaline solutions 302 23 06 Sulphuric acid solutions 306 23 07 Chloride solutions 307 23 08 Copper: state of the surface on open circuit 307 23 09 Alkaline solution 308 23 10 Acid solution 309 24 ZINC, CADMIUM, MERCURY, GALLIUM, INDIUM AND THALLIUM 24 01 Zinc: introduction 312 24 02 Alkaline solutions 312 24 03 Cadmium: introduction 314 24 04 Anodic behaviour 314 24 05 Mercury: alkaline solutions 319 24 06 Chloride solutions 319 24 07 Gallium, indium and thallium 319 CONTENTSXiii PAGE 25 LEAD, TIN, GERMANIUM AND SILICON 25 01 Lead: introduction; the acid lead ciill 321 25 02 Anodic processes on massive lead in sulphuric acid 322 25 03 Self-discharge 324 25 04 Antimonial lead 324 25 05 Photo-effects 325 25 06 Alkaline solutions 325 25 07 Tin: introduction 326 25 08 Low-current-density charging curves 326 25 09 Higher current densities 327 25 10 Germanium: introduction 328 25 11 Anodic dissolution 329 25 12 Electron-transfer reactions at germanium electrodes 331 25 13 Valve-metal-type oxide films 331 25 14 Silicon: valve-metal-type oxide films 332 25 15 Anodic dissolution 332 26 ANTIMONY, BISMUTH AND INDIUM ANTIMONIDE 26 01 Antimony: introduction 335 26 02 Anodic behaviour 335 26 03 Antimony as a pH-indicating electrode 336 26 04 Bismuth 337 26 05 Indium antimonide 338 APPENDIX A THE OXYGEN EVOLUTION REACTION A 01 Effect of the state of oxidation of the surface 342 A 02 Mechanism of oxygen evolution 343 APPENDIX B SOME NOTES ON ELECTROCHEMICAL TOPICS B 01 Introduction 345 B 02 The electrical double layer 345 B 03 Electrode potentials 348 B 04 Mixed potentials in corrosion processes 351 B 05 Reversible potentials of systems involving oxides 352 AUTHOR INDEX 355 SUBJECT INDEX 363
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physical XIII, 377 S. graph. Darst.
psigel TUB-nveb
publishDate 1961
publishDateSearch 1961
publishDateSort 1961
publisher Academic Press
record_format marc
spellingShingle Young, Lawrence
Anodic oxide films
Metallic films
Metall (DE-588)4038860-8 gnd
Oxidschicht (DE-588)4044242-1 gnd
subject_GND (DE-588)4038860-8
(DE-588)4044242-1
title Anodic oxide films
title_auth Anodic oxide films
title_exact_search Anodic oxide films
title_full Anodic oxide films by L. Young
title_fullStr Anodic oxide films by L. Young
title_full_unstemmed Anodic oxide films by L. Young
title_short Anodic oxide films
title_sort anodic oxide films
topic Metallic films
Metall (DE-588)4038860-8 gnd
Oxidschicht (DE-588)4044242-1 gnd
topic_facet Metallic films
Metall
Oxidschicht
url http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=001473679&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
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