VLSI fabrication principles Silicon and Gallium arsenide
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| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New York
John Wiley & Sons
1983
|
| Schriftenreihe: | A Wiley-Interscience publication
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| Schlagworte: | |
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| 245 | 1 | 0 | |a VLSI fabrication principles |b Silicon and Gallium arsenide |c Sorab K. Ghandhi |
| 264 | 1 | |a New York |b John Wiley & Sons |c 1983 | |
| 300 | |a XI, 665 Seiten |b Illustrationen, Diagramme | ||
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| 650 | 4 | |a Arséniure de gallium | |
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| 650 | 4 | |a Circuits intégrés à très grande échelle | |
| 650 | 4 | |a Silicium | |
| 650 | 4 | |a Gallium arsenide | |
| 650 | 4 | |a Integrated circuits |x Very large scale integration | |
| 650 | 4 | |a Silicon | |
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Datensatz im Suchindex
| DE-BY-TUM_call_number | 0001/83 A 770 |
|---|---|
| DE-BY-TUM_katkey | 297335 |
| DE-BY-TUM_media_number | 040001191759 |
| _version_ | 1816711412631732225 |
| any_adam_object | |
| author | Ghandhi, Sorab Khushro 1928- |
| author_GND | (DE-588)1077173571 |
| author_facet | Ghandhi, Sorab Khushro 1928- |
| author_role | aut |
| author_sort | Ghandhi, Sorab Khushro 1928- |
| author_variant | s k g sk skg |
| building | Verbundindex |
| bvnumber | BV002155523 |
| callnumber-first | T - Technology |
| callnumber-label | TK7874 |
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| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | ST 190 UX 2350 |
| classification_tum | ELT 355f ELT 270b |
| ctrlnum | (OCoLC)8589352 (DE-599)BVBBV002155523 |
| dewey-full | 621.381/71 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.381/71 |
| dewey-search | 621.381/71 |
| dewey-sort | 3621.381 271 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Informatik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV002155523 |
| illustrated | Illustrated |
| indexdate | 2024-11-25T17:07:22Z |
| institution | BVB |
| isbn | 0471868337 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-001414848 |
| oclc_num | 8589352 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-384 DE-739 DE-29T DE-706 DE-83 |
| owner_facet | DE-91 DE-BY-TUM DE-384 DE-739 DE-29T DE-706 DE-83 |
| physical | XI, 665 Seiten Illustrationen, Diagramme |
| psigel | TUB-nveb |
| publishDate | 1983 |
| publishDateSearch | 1983 |
| publishDateSort | 1983 |
| publisher | John Wiley & Sons |
| record_format | marc |
| series2 | A Wiley-Interscience publication |
| spellingShingle | Ghandhi, Sorab Khushro 1928- VLSI fabrication principles Silicon and Gallium arsenide Arséniure de gallium Circuitos Integrados larpcal Circuits intégrés à très grande échelle Silicium Gallium arsenide Integrated circuits Very large scale integration Silicon VLSI (DE-588)4117388-0 gnd Fertigung (DE-588)4016899-2 gnd |
| subject_GND | (DE-588)4117388-0 (DE-588)4016899-2 |
| title | VLSI fabrication principles Silicon and Gallium arsenide |
| title_auth | VLSI fabrication principles Silicon and Gallium arsenide |
| title_exact_search | VLSI fabrication principles Silicon and Gallium arsenide |
| title_full | VLSI fabrication principles Silicon and Gallium arsenide Sorab K. Ghandhi |
| title_fullStr | VLSI fabrication principles Silicon and Gallium arsenide Sorab K. Ghandhi |
| title_full_unstemmed | VLSI fabrication principles Silicon and Gallium arsenide Sorab K. Ghandhi |
| title_short | VLSI fabrication principles |
| title_sort | vlsi fabrication principles silicon and gallium arsenide |
| title_sub | Silicon and Gallium arsenide |
| topic | Arséniure de gallium Circuitos Integrados larpcal Circuits intégrés à très grande échelle Silicium Gallium arsenide Integrated circuits Very large scale integration Silicon VLSI (DE-588)4117388-0 gnd Fertigung (DE-588)4016899-2 gnd |
| topic_facet | Arséniure de gallium Circuitos Integrados Circuits intégrés à très grande échelle Silicium Gallium arsenide Integrated circuits Very large scale integration Silicon VLSI Fertigung |
| work_keys_str_mv | AT ghandhisorabkhushro vlsifabricationprinciplessiliconandgalliumarsenide |