The stationary semiconductor device equations

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1. Verfasser: Markowich, Peter A. 1956- (VerfasserIn)
Format: Buch
Sprache:English
Veröffentlicht: Wien u.a. Springer 1986
Schriftenreihe:Computational microelectronics
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Datensatz im Suchindex

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adam_text Contents 1. Introduction 1 A Review of Semiconductor Device Modeling 1 About This Book 2 Semiconductors 3 References 5 2. Mathematical Modeling of Semiconductor Devices 7 2.1 Derivation of the Basic Semiconductor Device Equations 7 Maxwell s Equations 7 Poisson s Equation 8 Continuity Equations 10 Current Relations 11 Summary 13 2.2 Parameter Models 14 The Doping Profile 14 The Recombination Generation Rate 16 Carrier Mobility Models 18 2.3 Boundary Conditions and Device Geometry The Static Problem 19 Boundary Conditions 19 The Static Problem 24 Geometric Properties of Devices 24 2.4 Dependent Variables and Scaling Transformation of State Variables 25 The Singular Perturbation Scaling 26 References 29 3. Analysis of the Basic Stationary Semiconductor Device Equations 31 3.1 Preliminaries 31 3.2 Existence of Solutions 33 3.3 Global Regularity 41 3.4 Uniqueness for Small Voltages 43 VIII Contents 3.5 Global Continuous Branches of Solutions 48 The Zero Recombination Generation Case 49 Voltage Current Characteristics 52 Non vanishing Recombination Generation Terms Impact Ionisation 54 3.6 Approximate Solutions 56 Approximation Analysis by Decoupling 57 Iteration Schemes 60 References 66 4. Singular Perturbation Analysis of the Stationary Semiconductor Device Problem 68 4.1 The Device Equations As Singular Perturbation Problem 68 4.2 A Singularly Perturbed Second Order Model Problem 72 Structure of Solutions 73 Slow and Fast Scales 76 4.3 Asymptotic Expansions 80 Local Coordinate Transformations 81 The Outer Expansion 83 The Junction Layer Expansion 83 Boundary Layer Expansions 87 A. Ohmic Contacts 88 B. Neumann Segments 89 C. Schottky Contacts 89 D. Semiconductor Oxide Interfaces 90 4.4 The Zero Space Charge Approximation 93 4.5 The Layer Problems 95 4.6 Representation and Structure of Solutions 100 4.7 Extensions 109 Graded Junctions 110 Strongly One sided Junctions 112 Field dependent Mobilities Velocity Saturation 115 4.8 Scaling Revisited and Conditioning 120 Rescaling Poisson s Equation 120 Conditioning of the Continuity Equations 124 References 129 5. Discretisation of the Stationary Device Problem 131 5.1 Construction of Discretisations 132 Discretisation of Poisson s Equation 133 A. The Ritz Galerkin Approximation 133 B. Piecewise Linear Finite Element Approximation 133 C. Finite Difference Schemes 137 Contents jX Discretisation of the Current Relations and Continuity Equations 139 A. Weak Formulations 140 B. The Failure of the Standard Discretisation 141 C. Finite Element Scharfetter Gummel Discretisations 143 D. The Finite Difference Scharfetter Gummel Schemes 148 5.2 Solutions of Static Discretisations 149 The Coefficient Matrices 150 5.3 Convergence of Discretisations 151 Decoupled Convergence Analysis 152 Classical Convergence Theory 154 Convergence Analysis of the SG Schemes 158 Convergence Analysis for Poisson s Equation 162 Current Density and Outflow Current Approximations 167 5.4 Extensions and Conclusions 169 Semiconductor Oxide Interfaces 169 Schottky Contacts 170 Adaptive Mesh Construction 171 References 176 6. Numerical Simulation A Case Study 178 References 183 Appendix 184 Notation of Physical Quantities 184 Mathematical Notation 185 A. Device Geometry 185 B. Scalars, Vectors and Matrices 186 C. Functions 186 D. Landau Symbols 187 E. Linear Spaces of Functions and Norms 187 F. Functionalanalytic Notations 189 Subject Index 191
any_adam_object 1
author Markowich, Peter A. 1956-
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publishDate 1986
publishDateSearch 1986
publishDateSort 1986
publisher Springer
record_format marc
series2 Computational microelectronics
spellingShingle Markowich, Peter A. 1956-
The stationary semiconductor device equations
Semiconducteurs - Modèles mathématiques
Mathematisches Modell
Semiconductors Mathematical models
Nichtlineare partielle Differentialgleichung (DE-588)4128900-6 gnd
Halbleiterbauelement (DE-588)4113826-0 gnd
Halbleiterschaltung (DE-588)4158811-3 gnd
Mathematisches Modell (DE-588)4114528-8 gnd
Halbleiter (DE-588)4022993-2 gnd
Simulation (DE-588)4055072-2 gnd
subject_GND (DE-588)4128900-6
(DE-588)4113826-0
(DE-588)4158811-3
(DE-588)4114528-8
(DE-588)4022993-2
(DE-588)4055072-2
title The stationary semiconductor device equations
title_auth The stationary semiconductor device equations
title_exact_search The stationary semiconductor device equations
title_full The stationary semiconductor device equations Peter A. Markowich
title_fullStr The stationary semiconductor device equations Peter A. Markowich
title_full_unstemmed The stationary semiconductor device equations Peter A. Markowich
title_short The stationary semiconductor device equations
title_sort the stationary semiconductor device equations
topic Semiconducteurs - Modèles mathématiques
Mathematisches Modell
Semiconductors Mathematical models
Nichtlineare partielle Differentialgleichung (DE-588)4128900-6 gnd
Halbleiterbauelement (DE-588)4113826-0 gnd
Halbleiterschaltung (DE-588)4158811-3 gnd
Mathematisches Modell (DE-588)4114528-8 gnd
Halbleiter (DE-588)4022993-2 gnd
Simulation (DE-588)4055072-2 gnd
topic_facet Semiconducteurs - Modèles mathématiques
Mathematisches Modell
Semiconductors Mathematical models
Nichtlineare partielle Differentialgleichung
Halbleiterbauelement
Halbleiterschaltung
Halbleiter
Simulation
url http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=000406066&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
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