An In Situ Synchrotron X‐Ray Diffraction Study on the Influence of Hydrogen on the Crystallization of Ge‐Rich Ge 2 Sb 2 Te 5

To passivate Si − SiO 2 dangling bonds, metal–oxide–semiconductor field‐effect transistor devices are usually treated with hydrogen. Herein, the effects of such a treatment on the crystallization behavior on N‐doped, Ge‐rich Ge 2 Sb 2 Te 5 phase‐change materials for memory applications are investiga...

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Veröffentlicht in:	Physica status solidi. PSS-RRL. Rapid research letters 2022-09, Vol.16 (9), p.n/a
Hauptverfasser:	Hans, Philipp, Mocuta, Cristian, Richard, Marie-Ingrid, Benoit, Daniel, Boivin, Philippe, Le-Friec, Yannick, Simola, Roberto, Thomas, Olivier
Format:	Artikel
Sprache:	eng
Schlagworte:	chalcogenides crystallization data storage in situ synchrotron X-ray diffraction phase‐change materials
Online-Zugang:	Volltext
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