Evolution of thermal conductivity of In3Sbβ Teγ thin films up to 550 °C
The temperature dependent thermal conductivity of In–Sb–Te thin films has been measured by modulated photothermal radiometry in the 20–550 °C range for samples with different Te content. Significant changes with temperature are observed and ascribed to a sequence of structural transformations on the...
Gespeichert in:
| Veröffentlicht in: | Physica status solidi. PSS-RRL. Rapid research letters 2016-07, Vol.10 (7), p.544-548 |
|---|---|
| Hauptverfasser: | , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 548 |
|---|---|
| container_issue | 7 |
| container_start_page | 544 |
| container_title | Physica status solidi. PSS-RRL. Rapid research letters |
| container_volume | 10 |
| creator | Battaglia, J.-L. Kusiak, A. Gaborieau, C. Anguy, Y. Nguyen, H. T. Wiemer, C. Fallica, R. Campi, D. Bernasconi, M. Longo, M. |
| description | The temperature dependent thermal conductivity of In–Sb–Te thin films has been measured by modulated photothermal radiometry in the 20–550 °C range for samples with different Te content. Significant changes with temperature are observed and ascribed to a sequence of structural transformations on the basis of in‐situ Raman spectra. The data suggest that the as‐deposited material consisting of a mixture of polycrystalline InSb0.8Te0.2and amorphous Te first undergoes a progressive crystallization of the amorphous part, mostly above 300 °C. Further increase in temperature above 460 °C leads, for higher Te content in the alloy, to the formation of crystalline In3SbTe2, intertwined with a less conductive compound, possibly InTe and/or InSb. Upon cooling to room temperature, the initial polycrystalline InSb0.8Te0.2phase is mostly recovered along with other compounds, with a slightly higher thermal conductivity than that of the as deposited material. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)
The thermal conductivity of In–Sb–Te alloy with poor and rich Te content is measured in the 20–500 °C range. The analysis of the results is supported by in‐situ Raman measurements. |
| doi_str_mv | 10.1002/pssr.201600109 |
| format | Article |
| fullrecord | <record><control><sourceid>wiley_istex</sourceid><recordid>TN_cdi_wiley_primary_10_1002_pssr_201600109_PSSR201600109</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>PSSR201600109</sourcerecordid><originalsourceid>FETCH-LOGICAL-i1589-3bafb749eca3cfdf195b0cd57ef528b4d61de7bb59d92be411204015ac30d9893</originalsourceid><addsrcrecordid>eNo9kE1OwzAQRi0EEqWwZe0LpIztOI6XEEopVOWnRUhsLDtxhCFNqjgt9FYIbsABeiZaFWU134zmfYuH0CmBHgGgZ3Pv6x4FEgEQkHuoQ-KIBhEVsN9mHh6iI-_fALgUIeugm_6yKhaNq0pc5bh5tfVMFzitymyRNm7pmtX2PizZxKy_8dSufzZPrsS5K2YeL-a4qTDngH-_kmN0kOvC25P_2UVPV_1pch2M7gbD5HwUOMJjGTCjcyNCaVPN0jzLieQG0owLm3MamzCLSGaFMVxmkhobEkIhBMJ1yiCTsWRdJHe9H66wKzWv3UzXK0VAbTWorQbValD3k8lju23YYMc639jPltX1u4oEE1w9jwfq5VJcjJPbBzVlfzsPZQc</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Evolution of thermal conductivity of In3Sbβ Teγ thin films up to 550 °C</title><source>Wiley Online Library Journals Frontfile Complete</source><creator>Battaglia, J.-L. ; Kusiak, A. ; Gaborieau, C. ; Anguy, Y. ; Nguyen, H. T. ; Wiemer, C. ; Fallica, R. ; Campi, D. ; Bernasconi, M. ; Longo, M.</creator><creatorcontrib>Battaglia, J.-L. ; Kusiak, A. ; Gaborieau, C. ; Anguy, Y. ; Nguyen, H. T. ; Wiemer, C. ; Fallica, R. ; Campi, D. ; Bernasconi, M. ; Longo, M.</creatorcontrib><description>The temperature dependent thermal conductivity of In–Sb–Te thin films has been measured by modulated photothermal radiometry in the 20–550 °C range for samples with different Te content. Significant changes with temperature are observed and ascribed to a sequence of structural transformations on the basis of in‐situ Raman spectra. The data suggest that the as‐deposited material consisting of a mixture of polycrystalline InSb0.8Te0.2and amorphous Te first undergoes a progressive crystallization of the amorphous part, mostly above 300 °C. Further increase in temperature above 460 °C leads, for higher Te content in the alloy, to the formation of crystalline In3SbTe2, intertwined with a less conductive compound, possibly InTe and/or InSb. Upon cooling to room temperature, the initial polycrystalline InSb0.8Te0.2phase is mostly recovered along with other compounds, with a slightly higher thermal conductivity than that of the as deposited material. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)
The thermal conductivity of In–Sb–Te alloy with poor and rich Te content is measured in the 20–500 °C range. The analysis of the results is supported by in‐situ Raman measurements.</description><identifier>ISSN: 1862-6254</identifier><identifier>EISSN: 1862-6270</identifier><identifier>DOI: 10.1002/pssr.201600109</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag Berlin GmbH</publisher><subject>alloys ; crystallization ; In−Sb−Te ; Raman spectroscopy ; Te content ; thermal conductivity ; thin films</subject><ispartof>Physica status solidi. PSS-RRL. Rapid research letters, 2016-07, Vol.10 (7), p.544-548</ispartof><rights>2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssr.201600109$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssr.201600109$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids></links><search><creatorcontrib>Battaglia, J.-L.</creatorcontrib><creatorcontrib>Kusiak, A.</creatorcontrib><creatorcontrib>Gaborieau, C.</creatorcontrib><creatorcontrib>Anguy, Y.</creatorcontrib><creatorcontrib>Nguyen, H. T.</creatorcontrib><creatorcontrib>Wiemer, C.</creatorcontrib><creatorcontrib>Fallica, R.</creatorcontrib><creatorcontrib>Campi, D.</creatorcontrib><creatorcontrib>Bernasconi, M.</creatorcontrib><creatorcontrib>Longo, M.</creatorcontrib><title>Evolution of thermal conductivity of In3Sbβ Teγ thin films up to 550 °C</title><title>Physica status solidi. PSS-RRL. Rapid research letters</title><addtitle>Phys. Status Solidi RRL</addtitle><description>The temperature dependent thermal conductivity of In–Sb–Te thin films has been measured by modulated photothermal radiometry in the 20–550 °C range for samples with different Te content. Significant changes with temperature are observed and ascribed to a sequence of structural transformations on the basis of in‐situ Raman spectra. The data suggest that the as‐deposited material consisting of a mixture of polycrystalline InSb0.8Te0.2and amorphous Te first undergoes a progressive crystallization of the amorphous part, mostly above 300 °C. Further increase in temperature above 460 °C leads, for higher Te content in the alloy, to the formation of crystalline In3SbTe2, intertwined with a less conductive compound, possibly InTe and/or InSb. Upon cooling to room temperature, the initial polycrystalline InSb0.8Te0.2phase is mostly recovered along with other compounds, with a slightly higher thermal conductivity than that of the as deposited material. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)
The thermal conductivity of In–Sb–Te alloy with poor and rich Te content is measured in the 20–500 °C range. The analysis of the results is supported by in‐situ Raman measurements.</description><subject>alloys</subject><subject>crystallization</subject><subject>In−Sb−Te</subject><subject>Raman spectroscopy</subject><subject>Te content</subject><subject>thermal conductivity</subject><subject>thin films</subject><issn>1862-6254</issn><issn>1862-6270</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNo9kE1OwzAQRi0EEqWwZe0LpIztOI6XEEopVOWnRUhsLDtxhCFNqjgt9FYIbsABeiZaFWU134zmfYuH0CmBHgGgZ3Pv6x4FEgEQkHuoQ-KIBhEVsN9mHh6iI-_fALgUIeugm_6yKhaNq0pc5bh5tfVMFzitymyRNm7pmtX2PizZxKy_8dSufzZPrsS5K2YeL-a4qTDngH-_kmN0kOvC25P_2UVPV_1pch2M7gbD5HwUOMJjGTCjcyNCaVPN0jzLieQG0owLm3MamzCLSGaFMVxmkhobEkIhBMJ1yiCTsWRdJHe9H66wKzWv3UzXK0VAbTWorQbValD3k8lju23YYMc639jPltX1u4oEE1w9jwfq5VJcjJPbBzVlfzsPZQc</recordid><startdate>201607</startdate><enddate>201607</enddate><creator>Battaglia, J.-L.</creator><creator>Kusiak, A.</creator><creator>Gaborieau, C.</creator><creator>Anguy, Y.</creator><creator>Nguyen, H. T.</creator><creator>Wiemer, C.</creator><creator>Fallica, R.</creator><creator>Campi, D.</creator><creator>Bernasconi, M.</creator><creator>Longo, M.</creator><general>WILEY-VCH Verlag Berlin GmbH</general><general>WILEY‐VCH Verlag Berlin GmbH</general><scope>BSCLL</scope></search><sort><creationdate>201607</creationdate><title>Evolution of thermal conductivity of In3Sbβ Teγ thin films up to 550 °C</title><author>Battaglia, J.-L. ; Kusiak, A. ; Gaborieau, C. ; Anguy, Y. ; Nguyen, H. T. ; Wiemer, C. ; Fallica, R. ; Campi, D. ; Bernasconi, M. ; Longo, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i1589-3bafb749eca3cfdf195b0cd57ef528b4d61de7bb59d92be411204015ac30d9893</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>alloys</topic><topic>crystallization</topic><topic>In−Sb−Te</topic><topic>Raman spectroscopy</topic><topic>Te content</topic><topic>thermal conductivity</topic><topic>thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Battaglia, J.-L.</creatorcontrib><creatorcontrib>Kusiak, A.</creatorcontrib><creatorcontrib>Gaborieau, C.</creatorcontrib><creatorcontrib>Anguy, Y.</creatorcontrib><creatorcontrib>Nguyen, H. T.</creatorcontrib><creatorcontrib>Wiemer, C.</creatorcontrib><creatorcontrib>Fallica, R.</creatorcontrib><creatorcontrib>Campi, D.</creatorcontrib><creatorcontrib>Bernasconi, M.</creatorcontrib><creatorcontrib>Longo, M.</creatorcontrib><collection>Istex</collection><jtitle>Physica status solidi. PSS-RRL. Rapid research letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Battaglia, J.-L.</au><au>Kusiak, A.</au><au>Gaborieau, C.</au><au>Anguy, Y.</au><au>Nguyen, H. T.</au><au>Wiemer, C.</au><au>Fallica, R.</au><au>Campi, D.</au><au>Bernasconi, M.</au><au>Longo, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Evolution of thermal conductivity of In3Sbβ Teγ thin films up to 550 °C</atitle><jtitle>Physica status solidi. PSS-RRL. Rapid research letters</jtitle><addtitle>Phys. Status Solidi RRL</addtitle><date>2016-07</date><risdate>2016</risdate><volume>10</volume><issue>7</issue><spage>544</spage><epage>548</epage><pages>544-548</pages><issn>1862-6254</issn><eissn>1862-6270</eissn><abstract>The temperature dependent thermal conductivity of In–Sb–Te thin films has been measured by modulated photothermal radiometry in the 20–550 °C range for samples with different Te content. Significant changes with temperature are observed and ascribed to a sequence of structural transformations on the basis of in‐situ Raman spectra. The data suggest that the as‐deposited material consisting of a mixture of polycrystalline InSb0.8Te0.2and amorphous Te first undergoes a progressive crystallization of the amorphous part, mostly above 300 °C. Further increase in temperature above 460 °C leads, for higher Te content in the alloy, to the formation of crystalline In3SbTe2, intertwined with a less conductive compound, possibly InTe and/or InSb. Upon cooling to room temperature, the initial polycrystalline InSb0.8Te0.2phase is mostly recovered along with other compounds, with a slightly higher thermal conductivity than that of the as deposited material. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)
The thermal conductivity of In–Sb–Te alloy with poor and rich Te content is measured in the 20–500 °C range. The analysis of the results is supported by in‐situ Raman measurements.</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag Berlin GmbH</pub><doi>10.1002/pssr.201600109</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1862-6254 |
| ispartof | Physica status solidi. PSS-RRL. Rapid research letters, 2016-07, Vol.10 (7), p.544-548 |
| issn | 1862-6254 1862-6270 |
| language | eng |
| recordid | cdi_wiley_primary_10_1002_pssr_201600109_PSSR201600109 |
| source | Wiley Online Library Journals Frontfile Complete |
| subjects | alloys crystallization In−Sb−Te Raman spectroscopy Te content thermal conductivity thin films |
| title | Evolution of thermal conductivity of In3Sbβ Teγ thin films up to 550 °C |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T18%3A25%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-wiley_istex&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Evolution%20of%20thermal%20conductivity%20of%20In3Sb%CE%B2%20Te%CE%B3%20thin%20films%20up%20to%20550%20%C2%B0C&rft.jtitle=Physica%20status%20solidi.%20PSS-RRL.%20Rapid%20research%20letters&rft.au=Battaglia,%20J.-L.&rft.date=2016-07&rft.volume=10&rft.issue=7&rft.spage=544&rft.epage=548&rft.pages=544-548&rft.issn=1862-6254&rft.eissn=1862-6270&rft_id=info:doi/10.1002/pssr.201600109&rft_dat=%3Cwiley_istex%3EPSSR201600109%3C/wiley_istex%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |