Limitations of Cl2/O2-based ICP-RIE of deep holes for planar photonic crystals in InP

A detailed study of dry‐etching of high‐aspect‐ratio holes into an indium phosphide substrate is presented for a Cl2/O2‐based plasma chemistry. The etching is performed in an inductively coupled plasma reactive ion etching reactor. The separate influence of the various etching parameters on the qual...

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Veröffentlicht in:	Physica status solidi. C 2012-02, Vol.9 (2), p.239-242
Hauptverfasser:	Kaspar, Peter, Fougner, Christopher, Kappeler, Roman, Jäckel, Heinz
Format:	Artikel
Sprache:	eng
Schlagworte:	dry-etching high aspect ratio indium phosphide photonic crystal
Online-Zugang:	Volltext
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