Shubnikov-de Haas Effect in (Cd1−x−yZnxMny)3As2 under Pressure

Shubnikov-de Haas Effect in (Cd1−x−yZnxMny)3As2 under Pressure

We have investigated the Shubnikov‐de Haas effect in single crystals of the group II‐V diluted magnetic semiconductors (Cd1−x−yZnxMny)AS2(x + y = 0.3, y = 0.06 and 0.08) at temperatures T = 4.2 to 16 K and magnetic fields B = 0 to 6.5 T under hydrostatic pressure p up to 14 kbar. Values of the cyclo...

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Veröffentlicht in:physica status solidi (b) 1996-11, Vol.198 (1), p.135-141
Hauptverfasser: Laiho, R., Lisunov, K. G., Shubnikov, M. L., Stamov, V. N., Zakhvalinskii, V. S.
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container_end_page 141
container_issue 1
container_start_page 135
container_title physica status solidi (b)
container_volume 198
creator Laiho, R.
Lisunov, K. G.
Shubnikov, M. L.
Stamov, V. N.
Zakhvalinskii, V. S.
description We have investigated the Shubnikov‐de Haas effect in single crystals of the group II‐V diluted magnetic semiconductors (Cd1−x−yZnxMny)AS2(x + y = 0.3, y = 0.06 and 0.08) at temperatures T = 4.2 to 16 K and magnetic fields B = 0 to 6.5 T under hydrostatic pressure p up to 14 kbar. Values of the cyclotron mass mc, the effective g‐factor g*, and the Dingle temperature TD have been determined. In both specimens a linear field dependence mc(B) = m c* + αB is observed, where m c* is independent of B but increases with pressure and where a does not depend on p and B. Additionally, pressure dependencies of g*, TD and the Hall mobility μR are observed. The dependence of m c* and g*, on p is interpreted within the three‐band Kane model. The decrease of μR and TD with increasing pressure is consistent with an increase of m c*.
doi_str_mv 10.1002/pssb.2221980119
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title Shubnikov-de Haas Effect in (Cd1−x−yZnxMny)3As2 under Pressure
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