Shubnikov-de Haas Effect in (Cd1−x−yZnxMny)3As2 under Pressure

We have investigated the Shubnikov‐de Haas effect in single crystals of the group II‐V diluted magnetic semiconductors (Cd1−x−yZnxMny)AS2(x + y = 0.3, y = 0.06 and 0.08) at temperatures T = 4.2 to 16 K and magnetic fields B = 0 to 6.5 T under hydrostatic pressure p up to 14 kbar. Values of the cyclotron mass mc, the effective g‐factor g*, and the Dingle temperature TD have been determined. In both specimens a linear field dependence mc(B) = m c* + αB is observed, where m c* is independent of B but increases with pressure and where a does not depend on p and B. Additionally, pressure dependencies of g*, TD and the Hall mobility μR are observed. The dependence of m c* and g*, on p is interpreted within the three‐band Kane model. The decrease of μR and TD with increasing pressure is consistent with an increase of m c*.