Polymorphism and Faceting in Ga2O3 Layers Grown by HVPE at Various Gallium‐to‐Oxygen Ratios

In article number 2100331, Sevastian Shapenkov and co‐workers describe phase contents and properties of layers of metastable gallium oxide phases obtained in halide vapor phase epitaxy on different substrates with different oxygen‐to‐gallium ratio. The cover image demonstrates crystallization of gal...

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Veröffentlicht in:	physica status solidi (b) 2022-02, Vol.259 (2), p.n/a
Hauptverfasser:	Shapenkov, Sevastian, Vyvenko, Oleg, Nikolaev, Vladimir, Stepanov, Sergei, Pechnikov, Alexei, Scheglov, Mikhail, Varygin, Georgiy
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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