Through-layer XPS investigations of the Si3N4/AlGaN interface

Investigations of chemical species at the dielectric/III‐N interface remain an important question in order to understand the chemical origin of the surface states, which are present at the heterostructure surface. In this work, we demonstrate a sample preparation technique to analyze the existing in...

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Veröffentlicht in:	physica status solidi (b) 2016-10, Vol.253 (10), p.2009-2014
Hauptverfasser:	Reiner, Maria, Denifl, Guenter, Stadtmueller, Michael, Pietschnig, Rudolf, Ostermaier, Clemens
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaN dielectric materials interface states interfaces Si3N4 X-ray photoelectron spectroscopy
Online-Zugang:	Volltext
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