Open questions after 20 years of CuInS2 research

ABSTRACT In the early 1990s, CuInS2 thin film solar cells with >10% efficiency had been developed. Since then, they are limited by an open‐circuit voltage which is too low for the band gap of CuInS2. Recombination at the CdS/CuInS2 interface was made responsible for this shortcoming. This was con...

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Veröffentlicht in:	Progress in photovoltaics 2012-08, Vol.20 (5), p.507-511
1. Verfasser:	Scheer, Roland
Format:	Artikel
Sprache:	eng
Schlagworte:	band offset carrier lifetime Cu(In Cu(In,Ga)S2 CuInS2 Ga)S2 interface recombination thin film ZnO
Online-Zugang:	Volltext
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