Field‐Induced Ferroelectric Hf1‐xZrxO2 Thin Films for High‐k Dynamic Random Access Memory

The field‐induced ferroelectric Hf1–xZrxO2 (FFE–HZO) thin film is investigated for use as the capacitive layer in the future dynamic random access memory (DRAM). Although the dielectric permittivity of FFE–HZO is as high as ≈80, a high electric field (4 MV cm−1) is needed to activate the FFE mechani...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Advanced electronic materials 2020-11, Vol.6 (11), p.n/a
Hauptverfasser:	Hyun, Seung Dam, Park, Hyeon Woo, Park, Min Hyuk, Lee, Young Hwan, Lee, Yong Bin, Kim, Beom Yong, Kim, Ho Hyun, Kim, Baek Su, Hwang, Cheol Seong
Format:	Artikel
Sprache:	eng ; jpn
Schlagworte:	capacitive layers dynamic random access memory field‐induced ferroelectrics Hf 1– xZr xO 2 high‐k dielectrics
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!