Efficient Luminescence and Energy Transfer in Erbium Silicate Thin Films
Erbium silicate thin films that have a good morphology are synthesized by radiofrequency magnetron sputtering. Properly annealed films exhibit efficient luminescence at 1535 nm, and all of the Er ions in the material (about 1022 cm–3) are demonstrated to be optically active. The possibility to effic...
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Veröffentlicht in: | Advanced materials (Weinheim) 2007-06, Vol.19 (12), p.1582-1588 |
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creator | Miritello, M. Lo Savio, R. Iacona, F. Franzò, G. Irrera, A. Piro, A. M. Bongiorno, C. Priolo, F. |
description | Erbium silicate thin films that have a good morphology are synthesized by radiofrequency magnetron sputtering. Properly annealed films exhibit efficient luminescence at 1535 nm, and all of the Er ions in the material (about 1022 cm–3) are demonstrated to be optically active. The possibility to efficiently excite Er ions also through electron–hole mediated processes is demonstrated in nanometer‐scale Er–Si–O/Si multilayers (see figure). The results are relevant to the improvement of silicon‐based devices. |
doi_str_mv | 10.1002/adma.200601692 |
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M. ; Bongiorno, C. ; Priolo, F.</creator><creatorcontrib>Miritello, M. ; Lo Savio, R. ; Iacona, F. ; Franzò, G. ; Irrera, A. ; Piro, A. M. ; Bongiorno, C. ; Priolo, F.</creatorcontrib><description>Erbium silicate thin films that have a good morphology are synthesized by radiofrequency magnetron sputtering. Properly annealed films exhibit efficient luminescence at 1535 nm, and all of the Er ions in the material (about 1022 cm–3) are demonstrated to be optically active. The possibility to efficiently excite Er ions also through electron–hole mediated processes is demonstrated in nanometer‐scale Er–Si–O/Si multilayers (see figure). The results are relevant to the improvement of silicon‐based devices.</description><identifier>ISSN: 0935-9648</identifier><identifier>EISSN: 1521-4095</identifier><identifier>DOI: 10.1002/adma.200601692</identifier><language>eng</language><publisher>Weinheim: WILEY‐VCH Verlag</publisher><subject>Hybrid materials ; Luminescence ; Optoelectronic materials ; Rare‐earth compounds ; Silicates ; Thin films</subject><ispartof>Advanced materials (Weinheim), 2007-06, Vol.19 (12), p.1582-1588</ispartof><rights>Copyright © 2007 WILEY‐VCH Verlag GmbH & Co. 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M.</creatorcontrib><creatorcontrib>Bongiorno, C.</creatorcontrib><creatorcontrib>Priolo, F.</creatorcontrib><title>Efficient Luminescence and Energy Transfer in Erbium Silicate Thin Films</title><title>Advanced materials (Weinheim)</title><description>Erbium silicate thin films that have a good morphology are synthesized by radiofrequency magnetron sputtering. Properly annealed films exhibit efficient luminescence at 1535 nm, and all of the Er ions in the material (about 1022 cm–3) are demonstrated to be optically active. The possibility to efficiently excite Er ions also through electron–hole mediated processes is demonstrated in nanometer‐scale Er–Si–O/Si multilayers (see figure). 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Properly annealed films exhibit efficient luminescence at 1535 nm, and all of the Er ions in the material (about 1022 cm–3) are demonstrated to be optically active. The possibility to efficiently excite Er ions also through electron–hole mediated processes is demonstrated in nanometer‐scale Er–Si–O/Si multilayers (see figure). The results are relevant to the improvement of silicon‐based devices.</abstract><cop>Weinheim</cop><pub>WILEY‐VCH Verlag</pub><doi>10.1002/adma.200601692</doi><tpages>7</tpages></addata></record> |
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subjects | Hybrid materials Luminescence Optoelectronic materials Rare‐earth compounds Silicates Thin films |
title | Efficient Luminescence and Energy Transfer in Erbium Silicate Thin Films |
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