Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO2

To date antiferroelectrics have not been considered as nonvolatile memory elements because a removal of the external field causes a depolarization, resulting in a loss of the stored information. In comparison to ferroelectrics, antiferroelectrics are known for their enhanced fatigue resistance. Ther...

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Veröffentlicht in:	Advanced functional materials 2016-11, Vol.26 (41), p.7486-7494
Hauptverfasser:	Pešić, Milan, Hoffmann, Michael, Richter, Claudia, Mikolajick, Thomas, Schroeder, Uwe
Format:	Artikel
Sprache:	eng
Schlagworte:	antiferroelectric RAM antiferroelectric ZrO2 supercapacitors universal memory
Online-Zugang:	Volltext
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