III–V and Related Semiconductor Materials
This chapter contains sections titled: Introduction III–Nitrides III–Phosphides III–Arsenides III–Antimonides References
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creator | Azad Malik, Mohammad O'Brien, Paul |
description | This chapter contains sections titled:
Introduction
III–Nitrides
III–Phosphides
III–Arsenides
III–Antimonides
References |
doi_str_mv | 10.1002/9780470976548.ch10 |
format | Book Chapter |
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Introduction
III–Nitrides
III–Phosphides
III–Arsenides
III–Antimonides
References</description><identifier>ISBN: 9780470681916</identifier><identifier>ISBN: 0470681918</identifier><identifier>EISBN: 0470976543</identifier><identifier>EISBN: 9780470976548</identifier><identifier>DOI: 10.1002/9780470976548.ch10</identifier><language>eng</language><publisher>Chichester, UK: John Wiley & Sons, Ltd</publisher><subject>Chemical Beam Epitaxy (CBE) ; III–Antimonides ; III–Arsenides ; III–Nitrides ; III–Phosphides ; III–V and Related Semiconductor Materials ; light‐emitting diodes (LEDs) ; Metal–Organic ChemicalVapour Deposition or Vapour Phase Epitaxy (MOCVD or MOVPE) ; The single‐source precursor (SSP) ; ultra‐high vacuum (UHV)</subject><ispartof>The Group 13 Metals Aluminium, Gallium, Indium and Thallium: Chemical Patterns and Peculiarities, 2011, p.612-653</ispartof><rights>Copyright © 2011 John Wiley & Sons, Ltd</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c930-af6062baa2684c389b3f5e4d862773c1b6aad4a67e9a6420a3b506e6042085ec3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002/9780470976548.ch10$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002/9780470976548.ch10$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>779,780,784,793,4323,27925,52532,52680</link.rule.ids></links><search><contributor>Downs, Anthony J</contributor><contributor>Aldridge, Simon</contributor><creatorcontrib>Azad Malik, Mohammad</creatorcontrib><creatorcontrib>O'Brien, Paul</creatorcontrib><title>III–V and Related Semiconductor Materials</title><title>The Group 13 Metals Aluminium, Gallium, Indium and Thallium: Chemical Patterns and Peculiarities</title><description>This chapter contains sections titled:
Introduction
III–Nitrides
III–Phosphides
III–Arsenides
III–Antimonides
References</description><subject>Chemical Beam Epitaxy (CBE)</subject><subject>III–Antimonides</subject><subject>III–Arsenides</subject><subject>III–Nitrides</subject><subject>III–Phosphides</subject><subject>III–V and Related Semiconductor Materials</subject><subject>light‐emitting diodes (LEDs)</subject><subject>Metal–Organic ChemicalVapour Deposition or Vapour Phase Epitaxy (MOCVD or MOVPE)</subject><subject>The single‐source precursor (SSP)</subject><subject>ultra‐high vacuum (UHV)</subject><isbn>9780470681916</isbn><isbn>0470681918</isbn><isbn>0470976543</isbn><isbn>9780470976548</isbn><fulltext>true</fulltext><rsrctype>book_chapter</rsrctype><creationdate>2011</creationdate><recordtype>book_chapter</recordtype><sourceid/><recordid>eNpVj81KxEAQhEdEUNe8gKfcJWtPetIzc5RF3cCKoIvXoecnGI0b2KyIN9_BN_RJzOoiWIeuomgKPiFOJUwlQHlutQGlwWqqlJmGRwl74vivwX2R7T7ISCvpUGTD8ASjlNba4JE4q-v66-PzIedVzO9Sx5sU8_v00oZ-FV_Dpl_nN2O3brkbTsRBM1rKdj4Ry6vL5WxeLG6v69nFoggWoeCGgErPXJJRAY312FRJRUOl1hikJ-aomHSyTKoERl8BJYIxmyoFnAj8nX1ru_Tuku_758FJcFti94_YbYl_Dn4DkEBI5Q</recordid><startdate>20110318</startdate><enddate>20110318</enddate><creator>Azad Malik, Mohammad</creator><creator>O'Brien, Paul</creator><general>John Wiley & Sons, Ltd</general><scope/></search><sort><creationdate>20110318</creationdate><title>III–V and Related Semiconductor Materials</title><author>Azad Malik, Mohammad ; O'Brien, Paul</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c930-af6062baa2684c389b3f5e4d862773c1b6aad4a67e9a6420a3b506e6042085ec3</frbrgroupid><rsrctype>book_chapters</rsrctype><prefilter>book_chapters</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Chemical Beam Epitaxy (CBE)</topic><topic>III–Antimonides</topic><topic>III–Arsenides</topic><topic>III–Nitrides</topic><topic>III–Phosphides</topic><topic>III–V and Related Semiconductor Materials</topic><topic>light‐emitting diodes (LEDs)</topic><topic>Metal–Organic ChemicalVapour Deposition or Vapour Phase Epitaxy (MOCVD or MOVPE)</topic><topic>The single‐source precursor (SSP)</topic><topic>ultra‐high vacuum (UHV)</topic><toplevel>online_resources</toplevel><creatorcontrib>Azad Malik, Mohammad</creatorcontrib><creatorcontrib>O'Brien, Paul</creatorcontrib></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Azad Malik, Mohammad</au><au>O'Brien, Paul</au><au>Downs, Anthony J</au><au>Aldridge, Simon</au><format>book</format><genre>bookitem</genre><ristype>CHAP</ristype><atitle>III–V and Related Semiconductor Materials</atitle><btitle>The Group 13 Metals Aluminium, Gallium, Indium and Thallium: Chemical Patterns and Peculiarities</btitle><date>2011-03-18</date><risdate>2011</risdate><spage>612</spage><epage>653</epage><pages>612-653</pages><isbn>9780470681916</isbn><isbn>0470681918</isbn><eisbn>0470976543</eisbn><eisbn>9780470976548</eisbn><abstract>This chapter contains sections titled:
Introduction
III–Nitrides
III–Phosphides
III–Arsenides
III–Antimonides
References</abstract><cop>Chichester, UK</cop><pub>John Wiley & Sons, Ltd</pub><doi>10.1002/9780470976548.ch10</doi><tpages>42</tpages></addata></record> |
fulltext | fulltext |
identifier | ISBN: 9780470681916 |
ispartof | The Group 13 Metals Aluminium, Gallium, Indium and Thallium: Chemical Patterns and Peculiarities, 2011, p.612-653 |
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language | eng |
recordid | cdi_wiley_ebooks_10_1002_9780470976548_ch10_ch10 |
source | Wiley Online Library All Obooks |
subjects | Chemical Beam Epitaxy (CBE) III–Antimonides III–Arsenides III–Nitrides III–Phosphides III–V and Related Semiconductor Materials light‐emitting diodes (LEDs) Metal–Organic ChemicalVapour Deposition or Vapour Phase Epitaxy (MOCVD or MOVPE) The single‐source precursor (SSP) ultra‐high vacuum (UHV) |
title | III–V and Related Semiconductor Materials |
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