X-RAY-DIFFRACTION ANALYSIS OF SI1-XGEX/SI SUPERLATTICES
Si1-xGex/Si strained-layer superlattices grown by molecular-beam epitaxy on Si substrates were investigated by x-ray double-crystal diffraction and x-ray grazing incidence diffraction. Both coherent and incoherent interfaces between the two components of the superlattices were observed. By fitting c...
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Veröffentlicht in: | Journal of applied physics 1992-10, Vol.72 (8), p.3474-3479 |
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Format: | Artikel |
Sprache: | eng |
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