Ion beam induced atomic mixing kinetics of Te/Cu and Te/Ag

Ion beam mixing, at room temperature, of Te/Cu and Te/Ag systems induced by 300 keV Kr + irradiation are studied by means of ac electrical resistivity measurements and 2 MeV 4He + back scattering spectrometry. Electrical resistivity data explained in terms of Rivière and Jaouen model showed that mixing is due to collisional cascade processes only. The effect of the sharp gradient in the ion energy (calculated from TRIM) transferred to target recoils at the Te/Cu (or Te/Ag) interface is correlated with the mixing efficiency calculated from resistivity data. On the other hand, RBS data also showed a large extent of mixing in the Te/Cu system compared to the Te/Ag system. A mixed layer with a nearly uniform composition of Te 0.27Cu 0.73 and a thickness of approximately 1500 Å is obtained after mixing with a fluence of 2.5×10 16 Kr +/cm 2, while a nonuniform mixed layer has been formed for Te/Ag system after mixing with a fluence of 2.13×10 16 Kr +/cm 2.