COMPOSITION DEPENDENT TRANSPORT-PROPERTIES OF STRAIN RELAXED INXGA1-XAS(X-LESS-THAN-OR-EQUAL-TO-0.45) EPILAYERS

The concentration and mobility of the two-dimensional electron gas present at the interface between strain-relaxed, lattice matched, InyAl1-yAs/InxGa1-xAs(x < 0.45), modulation doped heterojunctions grown by means of compositionally step-graded buffer layers on GaAs substrates, were measured at r...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 1992-08, Vol.61 (9), p.1116-1118
Hauptverfasser:	CHEN, JH, FERNANDEZ, JM, WIEDER, HH
Format:	Artikel
Sprache:	eng ; jpn
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Physical Sciences Physics Physics, Applied Science & Technology
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!