Molecular-beam epitaxial growth and surface diffusion

We investigate the statistical properties of the surface of thin films grown by molecular-beam epitaxy (MBE). We present and analyze a simple model of MBE growth which incorporates surface diffusion and deposition in a physically correct manner. The short-time behavior does not correspond to that pr...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Physical review letters 1992-07, Vol.69 (1), p.100-103
Hauptverfasser:	KESSLER, D. A, LEVINE, H, SANDER, L. M
Format:	Artikel
Sprache:	eng
Schlagworte:	661100 - Classical & Quantum Mechanics- (1992-) CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS COMPUTERIZED SIMULATION Condensed matter: structure, mechanical and thermal properties CRYSTAL STRUCTURE DIFFUSION DYNAMICS EPITAXY Exact sciences and technology MATHEMATICS MECHANICS MICROSTRUCTURE MOLECULAR BEAM EPITAXY NUMERICAL ANALYSIS Physics ROUGHNESS SCALING LAWS SIMULATION Solid surfaces and solid-solid interfaces STATISTICAL MECHANICS Surface and interface dynamics and vibrations SURFACE PROPERTIES Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	We investigate the statistical properties of the surface of thin films grown by molecular-beam epitaxy (MBE). We present and analyze a simple model of MBE growth which incorporates surface diffusion and deposition in a physically correct manner. The short-time behavior does not correspond to that predicted by the continuum model of Villain, Das Sarma, and others. At long times, the model is governed by Kardar-Parisi-Zhang dynamics.
ISSN:	0031-9007 1079-7114
DOI:	10.1103/PhysRevLett.69.100