Sputtering of YBa2Cu3O7−δ/NdAlO3/YBa2Cu3O7−δ trilayers
Epitaxial YBa2Cu3O7−δ/NdAlO3/YBa2Cu3O7−δ-trilayers were grown by sputtering from stoichiometric targets. The YBa2Cu3O7−δ (YBCO) films were deposited by dc-magnetron sputtering. For the NdAlO3 films, rf-magnetron sputtering was used. The individual YBCO films revealed critical-current densities up to...
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Veröffentlicht in: | Applied physics letters 1992-06, Vol.60 (26), p.3304-3306 |
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Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Epitaxial YBa2Cu3O7−δ/NdAlO3/YBa2Cu3O7−δ-trilayers were grown by sputtering from stoichiometric targets. The YBa2Cu3O7−δ (YBCO) films were deposited by dc-magnetron sputtering. For the NdAlO3 films, rf-magnetron sputtering was used. The individual YBCO films revealed critical-current densities up to 3×106 A/cm2 at 77 K. The bilayer and trilayer structures were characterized by x-ray diffraction, Rutherford backscattering spectroscopy, and transmission electron microscopy (TEM). The channel yield χmin of the YBCO film on top was 15% for an in situ deposited trilayer. The epitaxial growth of the subsequent layers was proved by cross-sectional TEM. Although the NdAlO3 layer contained misoriented grains, the top YBCO layer grows in single orientation over these areas. Preliminary electrical measurements show that NdAlO3 is a useful insulating dielectric for microelectronic applications. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.106674 |