Cathodoluminescence investigation of lateral carrier confinement in GaAs/AlGaAs quantum wires grown by OMCVD on nonplanar substrates

Crescent-shaped multiple quantum wires (QWR's) having a center thickness of 5.5 nm and an effective width of ∼ 10 nm were grown in situ by organometallic chemical vapor deposition (OMCVD) on V-grooved substrates. This fabrication technique yields damage-free QWR interfaces and luminescence efficiencies comparable to that of conventional quantum wells. Nonradiative interface recombination, usually dominating the luminescence transient in etched QWR's is strongly reduced enabling for the first time a detailed investigation of the kinetics of carrier collection, relaxation and recombination in the QWR structure. Results of spatially- and time-resolved cathodoluminescence investigations of these structures are presented and discussed.