Effects of X-ray irradiation on GIDL in MOSFETs

Effects of X-ray irradiation on GIDL in MOSFETs

The effect of X-ray irradiation on the gate-induced drain leakage (GIDL) is shown to be mostly due to the electrostatic effect of the trapped positive charge in n-channel MOSFETs. In p-channel MOSFETs, in addition, irradiation increases the interface-state-assisted tunneling component of the GIDL. I...

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Veröffentlicht in:IEEE electron device letters 1992-04, Vol.13 (4), p.189-191
Hauptverfasser: Acovic, A., Hsu, C.C.-H., Hsia, L.-C., Balasinski, A., Ma, T.-P.
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Applied sciences
Associate members
Circuits
CMOS technology
Electronics
Exact sciences and technology
Fabrication
Leakage current
MOSFETs
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Tunneling
Voltage
X-ray lithography
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Zusammenfassung:The effect of X-ray irradiation on the gate-induced drain leakage (GIDL) is shown to be mostly due to the electrostatic effect of the trapped positive charge in n-channel MOSFETs. In p-channel MOSFETs, in addition, irradiation increases the interface-state-assisted tunneling component of the GIDL. In both n- and p-channel MOSFETs, a forming gas anneal at 400 degrees C completely removes all effects of irradiation on the GIDL.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.145016