Thin film deposition of BaO by molecular beam epitaxy

Thin film deposition of BaO using BaO 2 as the source material is studied by molecular beam epitaxy. The crystalline nature of the films grown at different substrate temperatures is studied by RHEED. Chemical composition of the films has been ascertained from ESCA measurements carried out without br...

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Veröffentlicht in:	Journal of crystal growth 1992-03, Vol.118 (1), p.213-217
Hauptverfasser:	Muthe, K.P., Vyas, J.C., Kothiyal, G.P., Gandhi, D.P., Debnath, A.K., Gupta, S.K., Sabharwal, S.C., Gupta, M.K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Beschreibung
Zusammenfassung:	Thin film deposition of BaO using BaO 2 as the source material is studied by molecular beam epitaxy. The crystalline nature of the films grown at different substrate temperatures is studied by RHEED. Chemical composition of the films has been ascertained from ESCA measurements carried out without breaking the vacuum. The substrate temperature has been found to govern the composition of the films. Whilst at low growth temperature metallic Ba films are obtained, those grown at high temperatures (∼ 600°C) are of BaO.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/0022-0248(92)90066-R