Formation of an Oxide Surface Layer and Its Influence on the Growth of Epitaxial Silicon Nanowires

It is established that, when growing Si nanowires in a H 2 flow that has not been additionally purified from residues of O 2 and water vapor, SiO 2 layers are formed on the crystal surface and growth substrate. The growth of Si nanowires is inhibited because of the presence of an oxide surface layer...

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