Low-energy intense pulsed light annealing of InZnO sol-gel films via employment of a resonant absorber

Low-energy intense pulsed light annealing of InZnO sol-gel films via employment of a resonant absorber

A resonant absorber enables low-temperature sintering of InZnO sol-gel films with low-energy-density intense pulse light (IPL) irradiation (1J/pulse). A back-gate structure, incorporated with a resonant absorber, exhibits effective light absorption. A device fabricated based on such a gate structure...

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Veröffentlicht in:Applied physics letters 2021-09, Vol.119 (13), Article 132102
Hauptverfasser: Cho, Minwoo, Song, Kyeong-Youn, Cho, Kwan Hyun, Lee, Hoo-Jeong
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container_title Applied physics letters
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creator Cho, Minwoo
Song, Kyeong-Youn
Cho, Kwan Hyun
Lee, Hoo-Jeong
description A resonant absorber enables low-temperature sintering of InZnO sol-gel films with low-energy-density intense pulse light (IPL) irradiation (1J/pulse). A back-gate structure, incorporated with a resonant absorber, exhibits effective light absorption. A device fabricated based on such a gate structure and sintered with irradiation of 50 pulses (similar to 50J/cm(2)) demonstrates good electrical properties with a mobility of 0.34cm(2)/Vs and an on-off ratio of 10(6) and a substrate temperature under 210 degrees C, showcasing that employing a resonant absorber could enable low-temperature sintering of sol-gel films with low-energy-density irradiation. Further x-ray photoelectron spectroscopy analysis of the oxygen and nitrogen peaks indicates that IPL irradiation facilitated sol-gel reactions in films. Published under an exclusive license by AIP Publishing.
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subjects Physical Sciences
Physics
Physics, Applied
Science & Technology
title Low-energy intense pulsed light annealing of InZnO sol-gel films via employment of a resonant absorber
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