Structural and transport properties of Y1-x(Dy)(x)PdBi (0 = x = 1) topological semi-metallic thin films
We report the effect of 4f electron doping on structural, electrical, and magneto-transport properties of Dy doped half Heusler Y1-x(Dy)(x)PdBi (x=0, 0.2, 0.5, and 1) thin films grown by pulsed laser deposition. The electrical transport measurements show a typical semi-metallic behavior in the tempe...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2021-09, Vol.119 (12), Article 122402 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 12 |
| container_start_page | |
| container_title | Applied physics letters |
| container_volume | 119 |
| creator | Bhardwaj, Vishal Banerjee, Niladri Chatterjee, Ratnamala |
| description | We report the effect of 4f electron doping on structural, electrical, and magneto-transport properties of Dy doped half Heusler Y1-x(Dy)(x)PdBi (x=0, 0.2, 0.5, and 1) thin films grown by pulsed laser deposition. The electrical transport measurements show a typical semi-metallic behavior in the temperature range of 3K |
| doi_str_mv | 10.1063/5.0063996 |
| format | Article |
| fullrecord | <record><control><sourceid>webofscience</sourceid><recordid>TN_cdi_webofscience_primary_000735977500011</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>000735977500011</sourcerecordid><originalsourceid>FETCH-webofscience_primary_0007359775000113</originalsourceid><addsrcrecordid>eNqVjj9LBDEUxIMouP4p_Aav3EVy5hmycQsb9cRS0MbqiLns-SS7CUkO9769KfwCFsNvBoZhGLtCsULRyxu1EhXD0B-xBoXWXCLeHbNGCCF5Pyg8ZWc5f9eobqVs2O6tpL0t-2Q8mHkLJZk5x5AKxBSiS4VchjDCB_KlfTp07dK9bh8IWgH3sFRhByXE4MOObN3IbiI-uWK8Jwvli2YYyU_5gp2Mxmd3-cdzdv28fn984T_uM4zZkput28REk0mHTb2npRq0VtUhyv-1fwHSy02p</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Structural and transport properties of Y1-x(Dy)(x)PdBi (0 = x = 1) topological semi-metallic thin films</title><source>AIP Journals Complete</source><source>Web of Science - Science Citation Index Expanded - 2021<img src="https://exlibris-pub.s3.amazonaws.com/fromwos-v2.jpg" /></source><source>Alma/SFX Local Collection</source><creator>Bhardwaj, Vishal ; Banerjee, Niladri ; Chatterjee, Ratnamala</creator><creatorcontrib>Bhardwaj, Vishal ; Banerjee, Niladri ; Chatterjee, Ratnamala</creatorcontrib><description>We report the effect of 4f electron doping on structural, electrical, and magneto-transport properties of Dy doped half Heusler Y1-x(Dy)(x)PdBi (x=0, 0.2, 0.5, and 1) thin films grown by pulsed laser deposition. The electrical transport measurements show a typical semi-metallic behavior in the temperature range of 3K <= T <= 300K and a sharp drop in resistivity at low temperatures (<3K) for all the samples. Magneto-transport measurements and Shubnikov de-Hass oscillations at high magnetic fields demonstrate that for these topologically non-trivial samples, Dy doping induced variation of spin-orbit coupling strength and lattice density plays an active role in modifying the Fermi surface, carrier concentration, and the effective electron mass of massless carriers. There is a uniform suppression of the onset of superconductivity-like phenomena with increased Dy doping, which is possibly related to the increasing local exchange field arising from the 4f electrons in Dy. Our results indicate that we can tune various band structure parameters of YPdBi by f electron doping, and strained thin films of Y1-x(Dy)(x)PdBi show surface dominated relativistic carrier transport at low temperatures.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0063996</identifier><language>eng</language><publisher>MELVILLE: AIP Publishing</publisher><subject>Physical Sciences ; Physics ; Physics, Applied ; Science & Technology</subject><ispartof>Applied physics letters, 2021-09, Vol.119 (12), Article 122402</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>true</woscitedreferencessubscribed><cites>FETCH-webofscience_primary_0007359775000113</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27929,27930,39263</link.rule.ids></links><search><creatorcontrib>Bhardwaj, Vishal</creatorcontrib><creatorcontrib>Banerjee, Niladri</creatorcontrib><creatorcontrib>Chatterjee, Ratnamala</creatorcontrib><title>Structural and transport properties of Y1-x(Dy)(x)PdBi (0 = x = 1) topological semi-metallic thin films</title><title>Applied physics letters</title><addtitle>APPL PHYS LETT</addtitle><description>We report the effect of 4f electron doping on structural, electrical, and magneto-transport properties of Dy doped half Heusler Y1-x(Dy)(x)PdBi (x=0, 0.2, 0.5, and 1) thin films grown by pulsed laser deposition. The electrical transport measurements show a typical semi-metallic behavior in the temperature range of 3K <= T <= 300K and a sharp drop in resistivity at low temperatures (<3K) for all the samples. Magneto-transport measurements and Shubnikov de-Hass oscillations at high magnetic fields demonstrate that for these topologically non-trivial samples, Dy doping induced variation of spin-orbit coupling strength and lattice density plays an active role in modifying the Fermi surface, carrier concentration, and the effective electron mass of massless carriers. There is a uniform suppression of the onset of superconductivity-like phenomena with increased Dy doping, which is possibly related to the increasing local exchange field arising from the 4f electrons in Dy. Our results indicate that we can tune various band structure parameters of YPdBi by f electron doping, and strained thin films of Y1-x(Dy)(x)PdBi show surface dominated relativistic carrier transport at low temperatures.</description><subject>Physical Sciences</subject><subject>Physics</subject><subject>Physics, Applied</subject><subject>Science & Technology</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>HGBXW</sourceid><recordid>eNqVjj9LBDEUxIMouP4p_Aav3EVy5hmycQsb9cRS0MbqiLns-SS7CUkO9769KfwCFsNvBoZhGLtCsULRyxu1EhXD0B-xBoXWXCLeHbNGCCF5Pyg8ZWc5f9eobqVs2O6tpL0t-2Q8mHkLJZk5x5AKxBSiS4VchjDCB_KlfTp07dK9bh8IWgH3sFRhByXE4MOObN3IbiI-uWK8Jwvli2YYyU_5gp2Mxmd3-cdzdv28fn984T_uM4zZkput28REk0mHTb2npRq0VtUhyv-1fwHSy02p</recordid><startdate>20210920</startdate><enddate>20210920</enddate><creator>Bhardwaj, Vishal</creator><creator>Banerjee, Niladri</creator><creator>Chatterjee, Ratnamala</creator><general>AIP Publishing</general><scope>BLEPL</scope><scope>DTL</scope><scope>HGBXW</scope></search><sort><creationdate>20210920</creationdate><title>Structural and transport properties of Y1-x(Dy)(x)PdBi (0 = x = 1) topological semi-metallic thin films</title><author>Bhardwaj, Vishal ; Banerjee, Niladri ; Chatterjee, Ratnamala</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-webofscience_primary_0007359775000113</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Physical Sciences</topic><topic>Physics</topic><topic>Physics, Applied</topic><topic>Science & Technology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bhardwaj, Vishal</creatorcontrib><creatorcontrib>Banerjee, Niladri</creatorcontrib><creatorcontrib>Chatterjee, Ratnamala</creatorcontrib><collection>Web of Science Core Collection</collection><collection>Science Citation Index Expanded</collection><collection>Web of Science - Science Citation Index Expanded - 2021</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bhardwaj, Vishal</au><au>Banerjee, Niladri</au><au>Chatterjee, Ratnamala</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structural and transport properties of Y1-x(Dy)(x)PdBi (0 = x = 1) topological semi-metallic thin films</atitle><jtitle>Applied physics letters</jtitle><stitle>APPL PHYS LETT</stitle><date>2021-09-20</date><risdate>2021</risdate><volume>119</volume><issue>12</issue><artnum>122402</artnum><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We report the effect of 4f electron doping on structural, electrical, and magneto-transport properties of Dy doped half Heusler Y1-x(Dy)(x)PdBi (x=0, 0.2, 0.5, and 1) thin films grown by pulsed laser deposition. The electrical transport measurements show a typical semi-metallic behavior in the temperature range of 3K <= T <= 300K and a sharp drop in resistivity at low temperatures (<3K) for all the samples. Magneto-transport measurements and Shubnikov de-Hass oscillations at high magnetic fields demonstrate that for these topologically non-trivial samples, Dy doping induced variation of spin-orbit coupling strength and lattice density plays an active role in modifying the Fermi surface, carrier concentration, and the effective electron mass of massless carriers. There is a uniform suppression of the onset of superconductivity-like phenomena with increased Dy doping, which is possibly related to the increasing local exchange field arising from the 4f electrons in Dy. Our results indicate that we can tune various band structure parameters of YPdBi by f electron doping, and strained thin films of Y1-x(Dy)(x)PdBi show surface dominated relativistic carrier transport at low temperatures.</abstract><cop>MELVILLE</cop><pub>AIP Publishing</pub><doi>10.1063/5.0063996</doi><tpages>7</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2021-09, Vol.119 (12), Article 122402 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_webofscience_primary_000735977500011 |
| source | AIP Journals Complete; Web of Science - Science Citation Index Expanded - 2021<img src="https://exlibris-pub.s3.amazonaws.com/fromwos-v2.jpg" />; Alma/SFX Local Collection |
| subjects | Physical Sciences Physics Physics, Applied Science & Technology |
| title | Structural and transport properties of Y1-x(Dy)(x)PdBi (0 = x = 1) topological semi-metallic thin films |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-13T04%3A19%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-webofscience&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Structural%20and%20transport%20properties%20of%20Y1-x(Dy)(x)PdBi%20(0%20=%20x%20=%201)%20topological%20semi-metallic%20thin%20films&rft.jtitle=Applied%20physics%20letters&rft.au=Bhardwaj,%20Vishal&rft.date=2021-09-20&rft.volume=119&rft.issue=12&rft.artnum=122402&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/5.0063996&rft_dat=%3Cwebofscience%3E000735977500011%3C/webofscience%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |