Structural and transport properties of Y1-x(Dy)(x)PdBi (0 = x = 1) topological semi-metallic thin films

We report the effect of 4f electron doping on structural, electrical, and magneto-transport properties of Dy doped half Heusler Y1-x(Dy)(x)PdBi (x=0, 0.2, 0.5, and 1) thin films grown by pulsed laser deposition. The electrical transport measurements show a typical semi-metallic behavior in the tempe...

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Veröffentlicht in:Applied physics letters 2021-09, Vol.119 (12), Article 122402
Hauptverfasser: Bhardwaj, Vishal, Banerjee, Niladri, Chatterjee, Ratnamala
Format: Artikel
Sprache:eng
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Zusammenfassung:We report the effect of 4f electron doping on structural, electrical, and magneto-transport properties of Dy doped half Heusler Y1-x(Dy)(x)PdBi (x=0, 0.2, 0.5, and 1) thin films grown by pulsed laser deposition. The electrical transport measurements show a typical semi-metallic behavior in the temperature range of 3K
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0063996