Nonlinear Wave-Wave Interaction in Semiconductor Junction Diode
A semiconductor p-n junction diode with heavy doping under consideration is kept in forward biased condition. These are oppositely propagating electron and hole currents. These two streams interact among themselves and result in recombination, which supplies additional energy to the system. Such the...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on plasma science 2022-06, Vol.50 (6), p.1508-1517 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1517 |
|---|---|
| container_issue | 6 |
| container_start_page | 1508 |
| container_title | IEEE transactions on plasma science |
| container_volume | 50 |
| creator | Goswami, Jyotirmoy Chandra, Swarniv Das, Chinmay Sarkar, Jit |
| description | A semiconductor p-n junction diode with heavy doping under consideration is kept in forward biased condition. These are oppositely propagating electron and hole currents. These two streams interact among themselves and result in recombination, which supplies additional energy to the system. Such thermal energy creates additional electrical fluctuations, which exists long after the interaction has taken place. We have carried out an analytical investigation with numerical techniques as well as carried out a simulation of the wave-wave interaction in semiconductor junction diodes. In terms of signal transmission and operation of semiconductor device, such a theoretical study is important. |
| doi_str_mv | 10.1109/TPS.2021.3124454 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_webofscience_primary_000732693700001</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9618667</ieee_id><sourcerecordid>2679399345</sourcerecordid><originalsourceid>FETCH-LOGICAL-c221t-5a00af3edf1e59f6e91410853efa9916085956ca24c67540c4af7437c31af0983</originalsourceid><addsrcrecordid>eNqNkE1rGzEQhkVJoU7ae6GXhRzLOjP62tUpFDdfJSQBu_S4qPIIZGwp0e625N9HZk1yzUV6Qe-jYR7GviLMEcGcrR6Wcw4c5wK5lEp-YDM0wtRGNOqIzQCMqEWL4hM77vsNAEoFfMbO71Lchkg2V3_sP6r3R3UTB8rWDSHFKsRqSbvgUlyPbki5-jXG6eVnSGv6zD56u-3py-E-Yb8vL1aL6_r2_upm8eO2dpzjUCsLYL2gtUdSxmsyKBFaJchbY1CXaJR2lkunGyXBSesbKRon0HowrThhp9O_jzk9jdQP3SaNOZaRHddNWdQIqUoLppbLqe8z-e4xh53Nzx1Ct9fUFU3dXlN30FSQ7xPyn_4m37tA0dErBgCN4LpILAmwtNv3txdhsHtTizTGoaDfJjQQvSFGY6t1I14AGWiCuw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2679399345</pqid></control><display><type>article</type><title>Nonlinear Wave-Wave Interaction in Semiconductor Junction Diode</title><source>IEEE Electronic Library (IEL)</source><creator>Goswami, Jyotirmoy ; Chandra, Swarniv ; Das, Chinmay ; Sarkar, Jit</creator><creatorcontrib>Goswami, Jyotirmoy ; Chandra, Swarniv ; Das, Chinmay ; Sarkar, Jit</creatorcontrib><description>A semiconductor p-n junction diode with heavy doping under consideration is kept in forward biased condition. These are oppositely propagating electron and hole currents. These two streams interact among themselves and result in recombination, which supplies additional energy to the system. Such thermal energy creates additional electrical fluctuations, which exists long after the interaction has taken place. We have carried out an analytical investigation with numerical techniques as well as carried out a simulation of the wave-wave interaction in semiconductor junction diodes. In terms of signal transmission and operation of semiconductor device, such a theoretical study is important.</description><identifier>ISSN: 0093-3813</identifier><identifier>EISSN: 1939-9375</identifier><identifier>DOI: 10.1109/TPS.2021.3124454</identifier><identifier>CODEN: ITPSBD</identifier><language>eng</language><publisher>PISCATAWAY: IEEE</publisher><subject>Charge carrier processes ; Electric potential ; Electron–hole plasma ; electrostatic waves ; hole plasma waves ; Junction diodes ; Mathematical models ; P-n junctions ; Physical Sciences ; Physics ; Physics, Fluids & Plasmas ; Plasma temperature ; Plasmas ; Science & Technology ; Semiconductor devices ; Semiconductor diodes ; Semiconductor junctions ; Signal transmission ; simulation ; soliton–soliton interaction ; Thermal energy ; Wave interaction</subject><ispartof>IEEE transactions on plasma science, 2022-06, Vol.50 (6), p.1508-1517</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>true</woscitedreferencessubscribed><woscitedreferencescount>8</woscitedreferencescount><woscitedreferencesoriginalsourcerecordid>wos000732693700001</woscitedreferencesoriginalsourcerecordid><citedby>FETCH-LOGICAL-c221t-5a00af3edf1e59f6e91410853efa9916085956ca24c67540c4af7437c31af0983</citedby><cites>FETCH-LOGICAL-c221t-5a00af3edf1e59f6e91410853efa9916085956ca24c67540c4af7437c31af0983</cites><orcidid>0000-0003-4740-8823 ; 0000-0003-4616-197X ; 0000-0001-9410-1619 ; 0000-0003-4746-6142</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9618667$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,27928,27929,39262,54762</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9618667$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Goswami, Jyotirmoy</creatorcontrib><creatorcontrib>Chandra, Swarniv</creatorcontrib><creatorcontrib>Das, Chinmay</creatorcontrib><creatorcontrib>Sarkar, Jit</creatorcontrib><title>Nonlinear Wave-Wave Interaction in Semiconductor Junction Diode</title><title>IEEE transactions on plasma science</title><addtitle>TPS</addtitle><addtitle>IEEE T PLASMA SCI</addtitle><description>A semiconductor p-n junction diode with heavy doping under consideration is kept in forward biased condition. These are oppositely propagating electron and hole currents. These two streams interact among themselves and result in recombination, which supplies additional energy to the system. Such thermal energy creates additional electrical fluctuations, which exists long after the interaction has taken place. We have carried out an analytical investigation with numerical techniques as well as carried out a simulation of the wave-wave interaction in semiconductor junction diodes. In terms of signal transmission and operation of semiconductor device, such a theoretical study is important.</description><subject>Charge carrier processes</subject><subject>Electric potential</subject><subject>Electron–hole plasma</subject><subject>electrostatic waves</subject><subject>hole plasma waves</subject><subject>Junction diodes</subject><subject>Mathematical models</subject><subject>P-n junctions</subject><subject>Physical Sciences</subject><subject>Physics</subject><subject>Physics, Fluids & Plasmas</subject><subject>Plasma temperature</subject><subject>Plasmas</subject><subject>Science & Technology</subject><subject>Semiconductor devices</subject><subject>Semiconductor diodes</subject><subject>Semiconductor junctions</subject><subject>Signal transmission</subject><subject>simulation</subject><subject>soliton–soliton interaction</subject><subject>Thermal energy</subject><subject>Wave interaction</subject><issn>0093-3813</issn><issn>1939-9375</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><sourceid>HGBXW</sourceid><recordid>eNqNkE1rGzEQhkVJoU7ae6GXhRzLOjP62tUpFDdfJSQBu_S4qPIIZGwp0e625N9HZk1yzUV6Qe-jYR7GviLMEcGcrR6Wcw4c5wK5lEp-YDM0wtRGNOqIzQCMqEWL4hM77vsNAEoFfMbO71Lchkg2V3_sP6r3R3UTB8rWDSHFKsRqSbvgUlyPbki5-jXG6eVnSGv6zD56u-3py-E-Yb8vL1aL6_r2_upm8eO2dpzjUCsLYL2gtUdSxmsyKBFaJchbY1CXaJR2lkunGyXBSesbKRon0HowrThhp9O_jzk9jdQP3SaNOZaRHddNWdQIqUoLppbLqe8z-e4xh53Nzx1Ct9fUFU3dXlN30FSQ7xPyn_4m37tA0dErBgCN4LpILAmwtNv3txdhsHtTizTGoaDfJjQQvSFGY6t1I14AGWiCuw</recordid><startdate>202206</startdate><enddate>202206</enddate><creator>Goswami, Jyotirmoy</creator><creator>Chandra, Swarniv</creator><creator>Das, Chinmay</creator><creator>Sarkar, Jit</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>BLEPL</scope><scope>DTL</scope><scope>HGBXW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-4740-8823</orcidid><orcidid>https://orcid.org/0000-0003-4616-197X</orcidid><orcidid>https://orcid.org/0000-0001-9410-1619</orcidid><orcidid>https://orcid.org/0000-0003-4746-6142</orcidid></search><sort><creationdate>202206</creationdate><title>Nonlinear Wave-Wave Interaction in Semiconductor Junction Diode</title><author>Goswami, Jyotirmoy ; Chandra, Swarniv ; Das, Chinmay ; Sarkar, Jit</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c221t-5a00af3edf1e59f6e91410853efa9916085956ca24c67540c4af7437c31af0983</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Charge carrier processes</topic><topic>Electric potential</topic><topic>Electron–hole plasma</topic><topic>electrostatic waves</topic><topic>hole plasma waves</topic><topic>Junction diodes</topic><topic>Mathematical models</topic><topic>P-n junctions</topic><topic>Physical Sciences</topic><topic>Physics</topic><topic>Physics, Fluids & Plasmas</topic><topic>Plasma temperature</topic><topic>Plasmas</topic><topic>Science & Technology</topic><topic>Semiconductor devices</topic><topic>Semiconductor diodes</topic><topic>Semiconductor junctions</topic><topic>Signal transmission</topic><topic>simulation</topic><topic>soliton–soliton interaction</topic><topic>Thermal energy</topic><topic>Wave interaction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Goswami, Jyotirmoy</creatorcontrib><creatorcontrib>Chandra, Swarniv</creatorcontrib><creatorcontrib>Das, Chinmay</creatorcontrib><creatorcontrib>Sarkar, Jit</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Web of Science Core Collection</collection><collection>Science Citation Index Expanded</collection><collection>Web of Science - Science Citation Index Expanded - 2021</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on plasma science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Goswami, Jyotirmoy</au><au>Chandra, Swarniv</au><au>Das, Chinmay</au><au>Sarkar, Jit</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Nonlinear Wave-Wave Interaction in Semiconductor Junction Diode</atitle><jtitle>IEEE transactions on plasma science</jtitle><stitle>TPS</stitle><stitle>IEEE T PLASMA SCI</stitle><date>2022-06</date><risdate>2022</risdate><volume>50</volume><issue>6</issue><spage>1508</spage><epage>1517</epage><pages>1508-1517</pages><issn>0093-3813</issn><eissn>1939-9375</eissn><coden>ITPSBD</coden><abstract>A semiconductor p-n junction diode with heavy doping under consideration is kept in forward biased condition. These are oppositely propagating electron and hole currents. These two streams interact among themselves and result in recombination, which supplies additional energy to the system. Such thermal energy creates additional electrical fluctuations, which exists long after the interaction has taken place. We have carried out an analytical investigation with numerical techniques as well as carried out a simulation of the wave-wave interaction in semiconductor junction diodes. In terms of signal transmission and operation of semiconductor device, such a theoretical study is important.</abstract><cop>PISCATAWAY</cop><pub>IEEE</pub><doi>10.1109/TPS.2021.3124454</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0003-4740-8823</orcidid><orcidid>https://orcid.org/0000-0003-4616-197X</orcidid><orcidid>https://orcid.org/0000-0001-9410-1619</orcidid><orcidid>https://orcid.org/0000-0003-4746-6142</orcidid></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0093-3813 |
| ispartof | IEEE transactions on plasma science, 2022-06, Vol.50 (6), p.1508-1517 |
| issn | 0093-3813 1939-9375 |
| language | eng |
| recordid | cdi_webofscience_primary_000732693700001 |
| source | IEEE Electronic Library (IEL) |
| subjects | Charge carrier processes Electric potential Electron–hole plasma electrostatic waves hole plasma waves Junction diodes Mathematical models P-n junctions Physical Sciences Physics Physics, Fluids & Plasmas Plasma temperature Plasmas Science & Technology Semiconductor devices Semiconductor diodes Semiconductor junctions Signal transmission simulation soliton–soliton interaction Thermal energy Wave interaction |
| title | Nonlinear Wave-Wave Interaction in Semiconductor Junction Diode |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-16T17%3A26%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Nonlinear%20Wave-Wave%20Interaction%20in%20Semiconductor%20Junction%20Diode&rft.jtitle=IEEE%20transactions%20on%20plasma%20science&rft.au=Goswami,%20Jyotirmoy&rft.date=2022-06&rft.volume=50&rft.issue=6&rft.spage=1508&rft.epage=1517&rft.pages=1508-1517&rft.issn=0093-3813&rft.eissn=1939-9375&rft.coden=ITPSBD&rft_id=info:doi/10.1109/TPS.2021.3124454&rft_dat=%3Cproquest_RIE%3E2679399345%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2679399345&rft_id=info:pmid/&rft_ieee_id=9618667&rfr_iscdi=true |