Percolation theory based model of conduction mechanism and characteristic contradiction in ZnO RRAM
Resistive random access memory (RRAM) has been intensively investigated for nearly two decades. However, RRAM has not been applied widely in the market because of the poor characteristics, such as reliability and uniformity, which could be improved by the accurate comprehension of the mechanism. In...
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| Veröffentlicht in: | Applied physics letters 2021-11, Vol.119 (21), Article 213503 |
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| container_title | Applied physics letters |
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| creator | Qi, Haiqing Hu, Cong Wang, Yanyong Ali, Salamat Hu, Junjie Bai, Na Wang, Qi Qi, Jing He, Deyan |
| description | Resistive random access memory (RRAM) has been intensively investigated for nearly two decades. However, RRAM has not been applied widely in the market because of the poor characteristics, such as reliability and uniformity, which could be improved by the accurate comprehension of the mechanism. In this paper, a model based on percolation theory is proposed to simulate the I-V characteristics of ZnO resistive switching memory. It demonstrates that three different conductions of space charge limited current, Poole–Frenkel effect, and thermionic emission are determined by the relationship between the oxygen vacancy concentration and the bias. Furthermore, this model well explains the effect of conductive filaments' diameter and compliance current on the I-V characteristics of ZnO resistive switching memory, which demonstrates the rationality of the percolation model. |
| doi_str_mv | 10.1063/5.0069763 |
| format | Article |
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However, RRAM has not been applied widely in the market because of the poor characteristics, such as reliability and uniformity, which could be improved by the accurate comprehension of the mechanism. In this paper, a model based on percolation theory is proposed to simulate the I-V characteristics of ZnO resistive switching memory. It demonstrates that three different conductions of space charge limited current, Poole–Frenkel effect, and thermionic emission are determined by the relationship between the oxygen vacancy concentration and the bias. Furthermore, this model well explains the effect of conductive filaments' diameter and compliance current on the I-V characteristics of ZnO resistive switching memory, which demonstrates the rationality of the percolation model.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0069763</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>MELVILLE: AIP Publishing</publisher><subject>Applied physics ; Current voltage characteristics ; Filaments ; Percolation theory ; Physical Sciences ; Physics ; Physics, Applied ; Random access memory ; Science & Technology ; Space charge ; Switching ; Thermionic emission ; Zinc oxide</subject><ispartof>Applied physics letters, 2021-11, Vol.119 (21), Article 213503</ispartof><rights>Author(s)</rights><rights>2021 Author(s). 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However, RRAM has not been applied widely in the market because of the poor characteristics, such as reliability and uniformity, which could be improved by the accurate comprehension of the mechanism. In this paper, a model based on percolation theory is proposed to simulate the I-V characteristics of ZnO resistive switching memory. It demonstrates that three different conductions of space charge limited current, Poole–Frenkel effect, and thermionic emission are determined by the relationship between the oxygen vacancy concentration and the bias. Furthermore, this model well explains the effect of conductive filaments' diameter and compliance current on the I-V characteristics of ZnO resistive switching memory, which demonstrates the rationality of the percolation model.</description><subject>Applied physics</subject><subject>Current voltage characteristics</subject><subject>Filaments</subject><subject>Percolation theory</subject><subject>Physical Sciences</subject><subject>Physics</subject><subject>Physics, Applied</subject><subject>Random access memory</subject><subject>Science & Technology</subject><subject>Space charge</subject><subject>Switching</subject><subject>Thermionic emission</subject><subject>Zinc oxide</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>HGBXW</sourceid><recordid>eNqN0MtKAzEUBuAgCtbqwjcIuFKZmstkZrosxRtUKkU3bob0TEJT2qQmqdK3N-0UXSmSRU7gOyfJj9A5JT1KCn4jeoQU_bLgB6hDSVlmnNLqEHUIITwr-oIeo5MQ5ukoGOcdBM_Kg1vIaJzFcaac3-CpDKrBS9eoBXYag7PNGnZgqWAmrQlLLG2DU-0lROVNiAa2LnrZmJYai9_sGE8mg6dTdKTlIqiz_d5Fr3e3L8OHbDS-fxwORhlwVsasYYKD1hK4mOay4NuVEw2sBMYol5UgDPpESa0IBVLkU9AsfVZWUEGpct5FF-3clXfvaxViPXdrb9OVNSsILSoh2FZdtgq8C8ErXa-8WUq_qSmptxnWot5nmGzV2k81dTqAURbUt08hloyzSvRTRfKhibsYh25tY2q9_n9r0letTrCd8uerfsUfzv_AetVo_gWb4KC2</recordid><startdate>20211122</startdate><enddate>20211122</enddate><creator>Qi, Haiqing</creator><creator>Hu, Cong</creator><creator>Wang, Yanyong</creator><creator>Ali, Salamat</creator><creator>Hu, Junjie</creator><creator>Bai, Na</creator><creator>Wang, Qi</creator><creator>Qi, Jing</creator><creator>He, Deyan</creator><general>AIP Publishing</general><general>American Institute of Physics</general><scope>BLEPL</scope><scope>DTL</scope><scope>HGBXW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-3260-467X</orcidid><orcidid>https://orcid.org/0000-0003-4785-3169</orcidid><orcidid>https://orcid.org/0000-0003-1729-6859</orcidid></search><sort><creationdate>20211122</creationdate><title>Percolation theory based model of conduction mechanism and characteristic contradiction in ZnO RRAM</title><author>Qi, Haiqing ; Hu, Cong ; Wang, Yanyong ; Ali, Salamat ; Hu, Junjie ; Bai, Na ; Wang, Qi ; Qi, Jing ; He, Deyan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-d253cffac35b4a63636340fc27c2213a8502c90eafe01c064bcf2069a8c8c7e43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Applied physics</topic><topic>Current voltage characteristics</topic><topic>Filaments</topic><topic>Percolation theory</topic><topic>Physical Sciences</topic><topic>Physics</topic><topic>Physics, Applied</topic><topic>Random access memory</topic><topic>Science & Technology</topic><topic>Space charge</topic><topic>Switching</topic><topic>Thermionic emission</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Qi, Haiqing</creatorcontrib><creatorcontrib>Hu, Cong</creatorcontrib><creatorcontrib>Wang, Yanyong</creatorcontrib><creatorcontrib>Ali, Salamat</creatorcontrib><creatorcontrib>Hu, Junjie</creatorcontrib><creatorcontrib>Bai, Na</creatorcontrib><creatorcontrib>Wang, Qi</creatorcontrib><creatorcontrib>Qi, Jing</creatorcontrib><creatorcontrib>He, Deyan</creatorcontrib><collection>Web of Science Core Collection</collection><collection>Science Citation Index Expanded</collection><collection>Web of Science - Science Citation Index Expanded - 2021</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Qi, Haiqing</au><au>Hu, Cong</au><au>Wang, Yanyong</au><au>Ali, Salamat</au><au>Hu, Junjie</au><au>Bai, Na</au><au>Wang, Qi</au><au>Qi, Jing</au><au>He, Deyan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Percolation theory based model of conduction mechanism and characteristic contradiction in ZnO RRAM</atitle><jtitle>Applied physics letters</jtitle><stitle>APPL PHYS LETT</stitle><date>2021-11-22</date><risdate>2021</risdate><volume>119</volume><issue>21</issue><artnum>213503</artnum><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Resistive random access memory (RRAM) has been intensively investigated for nearly two decades. However, RRAM has not been applied widely in the market because of the poor characteristics, such as reliability and uniformity, which could be improved by the accurate comprehension of the mechanism. In this paper, a model based on percolation theory is proposed to simulate the I-V characteristics of ZnO resistive switching memory. It demonstrates that three different conductions of space charge limited current, Poole–Frenkel effect, and thermionic emission are determined by the relationship between the oxygen vacancy concentration and the bias. 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| ispartof | Applied physics letters, 2021-11, Vol.119 (21), Article 213503 |
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| source | AIP Journals Complete; Web of Science - Science Citation Index Expanded - 2021<img src="https://exlibris-pub.s3.amazonaws.com/fromwos-v2.jpg" />; Alma/SFX Local Collection |
| subjects | Applied physics Current voltage characteristics Filaments Percolation theory Physical Sciences Physics Physics, Applied Random access memory Science & Technology Space charge Switching Thermionic emission Zinc oxide |
| title | Percolation theory based model of conduction mechanism and characteristic contradiction in ZnO RRAM |
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