Mid-/Short-Wave dual-band infrared detector based on InAs/GaSb superlattice/GaSb bulk materials

Using GaSb bulk and InAs/GaSb superlattice as short wave and medium wave infrared absorbing materials respectively, a short/mid dual-band infrared detectors with NIPPIN structure were epitaxial growth and fabricated. HRXRD and AFM tests show the FWHM of zero order peak of InAs/GaSb superlattice and GaSb peak are 17. 57 arcsec and 19. 15 arcsec, respectively. Surface root mean square roughness RMS is 1. 82 angstrom under 10 mu m x 10 mu m. At 77 K, the maximum product RA of resistance and area of SiO2 passivated device is 5.58 x 10(5) Omega.cm(2), the dark current density is 5.27 x 10(-7) A.cm(-2), and side wall resistivity is 6.83 x 10(6)Omega.cm. After anodic sulfuration, the maximum RA of the device is 1.86 x 10(6) Omega.cm(2), the dark current density is 4.12 x 10(-7) A.cm(-2), and side wall resistivity is 4.49 x 10(7) Omega.cm. Sulfurization reduces dark current of the device by more than one order of magnitude and increases side wall resistivity by one order of magnitude under same bias. The spectral res