Fully Printed Inorganic Schottky Diode

Inorganic semiconductors have the potential features to enhance the stability and performance of printed electronic devices. In this work, we present a microcantilever ( \mu \text{C} ) printed device by using zinc oxide (ZnO) and silver nanoparticles (AgNP) ink. Two types of devices have been fabricated on silicon wafers using two methods: (i) the ZnO ink is printed between two \mu \text{C} printed AgNP electrodes separated within a sub- 5~\mu \text{m} gap (ii) the ZnO ink have been drop-casted between two \mu \text{C} printed AgNP electrodes. Therefore the first type of devices is a fully printed structure. The measurements of both devices show distinct electrical aspects corresponding to the different additive fabrication approach. Furthermore, the fully printed Schottky diode exhibits a remarkable high on/off current ratio of 1.85\times 10^{{5}} at room temperature with a barrier height of 0.49 eV and series resistance of 594 \text{k}\Omega .