Effect of electron beam irradiation on EIS and photoelectrochemical performance of electrodeposited nanocrystalline Bi2Te3 thin films

In this research work, we have synthesized nanocrystalline Bi 2 Te 3 thin films for photoelectrochemical (PEC) solar cell application by potentiostatic electrodeposition method on stainless steel substrates. Subsequently films were irradiated with electron beam irradiation (EBI) of energy 4.5 MeV at...

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Veröffentlicht in:Journal of materials science. Materials in electronics 2021-08, Vol.32 (15), p.20031-20046
Hauptverfasser: Thorat, Jayavant B., Harale, Namdev S., Dhole, Indrajeet A., Shinde, S. K., Rath, M. C., Shinde, Tukaram J., Shinde, Nitin S., Fulari, Vijay J.
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container_end_page 20046
container_issue 15
container_start_page 20031
container_title Journal of materials science. Materials in electronics
container_volume 32
creator Thorat, Jayavant B.
Harale, Namdev S.
Dhole, Indrajeet A.
Shinde, S. K.
Rath, M. C.
Shinde, Tukaram J.
Shinde, Nitin S.
Fulari, Vijay J.
description In this research work, we have synthesized nanocrystalline Bi 2 Te 3 thin films for photoelectrochemical (PEC) solar cell application by potentiostatic electrodeposition method on stainless steel substrates. Subsequently films were irradiated with electron beam irradiation (EBI) of energy 4.5 MeV at various doses of irradiation ranging from 10 to 50 kGy. The experimental results showed that synthesized Bi 2 Te 3 thin films having polycrystalline nature and rhombohedral crystal structure with momentous morphological digression through various doses of irradiation. The electrochemical active surface area (ECSA) and photoelectrochemical (PEC) performance of Bi 2 Te 3 thin films were improved well at irradiation dose of 40 kGy. The calculated values of photoconversion efficiency and fill factor for Bi 2 Te 3 thin film were found to be 0.1837% and 0.5383, respectively. The values of photoconversion efficiency and fill factor of same electrode before irradiation have values 0.0987% and 0.3979, respectively. The enhancement in efficiency and fill factor due to EBI were found 53% and 74%, respectively. The enhancement in PEC properties is due to increased active surface area of the Bi 2 Te 3 films after irradiation dose. The results showed that, EBI are capable to strengthen the quality of electrode for PEC solar cell application.
doi_str_mv 10.1007/s10854-021-06290-x
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The electrochemical active surface area (ECSA) and photoelectrochemical (PEC) performance of Bi 2 Te 3 thin films were improved well at irradiation dose of 40 kGy. The calculated values of photoconversion efficiency and fill factor for Bi 2 Te 3 thin film were found to be 0.1837% and 0.5383, respectively. The values of photoconversion efficiency and fill factor of same electrode before irradiation have values 0.0987% and 0.3979, respectively. The enhancement in efficiency and fill factor due to EBI were found 53% and 74%, respectively. The enhancement in PEC properties is due to increased active surface area of the Bi 2 Te 3 films after irradiation dose. The results showed that, EBI are capable to strengthen the quality of electrode for PEC solar cell application.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-021-06290-x</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Bismuth tellurides ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Crystal structure ; Efficiency ; Electron beams ; Electron irradiation ; Engineering ; Engineering, Electrical &amp; Electronic ; Food irradiation ; Materials Science ; Materials Science, Multidisciplinary ; Nanocrystals ; Optical and Electronic Materials ; Photovoltaic cells ; Physical Sciences ; Physics ; Physics, Applied ; Physics, Condensed Matter ; Quantum efficiency ; Radiation dosage ; Science &amp; Technology ; Solar cells ; Stainless steels ; Substrates ; Surface area ; Synthesis ; Technology ; Thin films</subject><ispartof>Journal of materials science. 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The experimental results showed that synthesized Bi 2 Te 3 thin films having polycrystalline nature and rhombohedral crystal structure with momentous morphological digression through various doses of irradiation. The electrochemical active surface area (ECSA) and photoelectrochemical (PEC) performance of Bi 2 Te 3 thin films were improved well at irradiation dose of 40 kGy. The calculated values of photoconversion efficiency and fill factor for Bi 2 Te 3 thin film were found to be 0.1837% and 0.5383, respectively. The values of photoconversion efficiency and fill factor of same electrode before irradiation have values 0.0987% and 0.3979, respectively. The enhancement in efficiency and fill factor due to EBI were found 53% and 74%, respectively. The enhancement in PEC properties is due to increased active surface area of the Bi 2 Te 3 films after irradiation dose. 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Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><stitle>J MATER SCI-MATER EL</stitle><date>2021-08-01</date><risdate>2021</risdate><volume>32</volume><issue>15</issue><spage>20031</spage><epage>20046</epage><pages>20031-20046</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>In this research work, we have synthesized nanocrystalline Bi 2 Te 3 thin films for photoelectrochemical (PEC) solar cell application by potentiostatic electrodeposition method on stainless steel substrates. Subsequently films were irradiated with electron beam irradiation (EBI) of energy 4.5 MeV at various doses of irradiation ranging from 10 to 50 kGy. The experimental results showed that synthesized Bi 2 Te 3 thin films having polycrystalline nature and rhombohedral crystal structure with momentous morphological digression through various doses of irradiation. The electrochemical active surface area (ECSA) and photoelectrochemical (PEC) performance of Bi 2 Te 3 thin films were improved well at irradiation dose of 40 kGy. The calculated values of photoconversion efficiency and fill factor for Bi 2 Te 3 thin film were found to be 0.1837% and 0.5383, respectively. The values of photoconversion efficiency and fill factor of same electrode before irradiation have values 0.0987% and 0.3979, respectively. The enhancement in efficiency and fill factor due to EBI were found 53% and 74%, respectively. The enhancement in PEC properties is due to increased active surface area of the Bi 2 Te 3 films after irradiation dose. The results showed that, EBI are capable to strengthen the quality of electrode for PEC solar cell application.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-021-06290-x</doi><tpages>16</tpages><orcidid>https://orcid.org/0000-0002-3829-3879</orcidid></addata></record>
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subjects Bismuth tellurides
Characterization and Evaluation of Materials
Chemistry and Materials Science
Crystal structure
Efficiency
Electron beams
Electron irradiation
Engineering
Engineering, Electrical & Electronic
Food irradiation
Materials Science
Materials Science, Multidisciplinary
Nanocrystals
Optical and Electronic Materials
Photovoltaic cells
Physical Sciences
Physics
Physics, Applied
Physics, Condensed Matter
Quantum efficiency
Radiation dosage
Science & Technology
Solar cells
Stainless steels
Substrates
Surface area
Synthesis
Technology
Thin films
title Effect of electron beam irradiation on EIS and photoelectrochemical performance of electrodeposited nanocrystalline Bi2Te3 thin films
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